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    • 95. 发明授权
    • Flexible and area efficient column redundancy for non-volatile memories
    • 非易失性存储器的灵活和区域高效的列冗余
    • US07405985B2
    • 2008-07-29
    • US11619524
    • 2007-01-03
    • Raul-Adrian CerneaYan Li
    • Raul-Adrian CerneaYan Li
    • G11C29/00
    • G11C7/1036G11C29/848
    • A non-volatile memory wherein bad columns in the array of memory cells can be removed is described. Additionally, substitute redundant columns can replace the removed columns. Both of these processes are performed on the memory in a manner that is externally transparent and, consequently, need not be managed externally by the host or controller to which the memory is attached. An inventory of the bad columns can be maintained on the memory. At power up, the list of bad columns is used to fuse out the bad columns. The memory may also contain a number of redundant columns that can be used to replace the bad columns.
    • 描述了可以去除存储器单元阵列中的不良列的非易失性存储器。 另外,替换冗余列可以替换已删除的列。 这些处理都以外部透明的方式在存储器上执行,因此不需要由附加存储器的主机或控制器在外部进行管理。 可以在内存上维护坏列的清单。 上电时,不良列的列表用于对不良列进行融合。 内存还可能包含一些可用于替换不良列的冗余列。
    • 97. 发明授权
    • Method and apparatus for measuring a retinal sublayer characteristic
    • 用于测量视网膜亚层特征的方法和装置
    • US07347548B2
    • 2008-03-25
    • US10833524
    • 2004-04-28
    • David HuangOu TanYan Li
    • David HuangOu TanYan Li
    • A61B3/10
    • A61B3/102
    • Methods and systems are provided for measuring a retinal sublayer characteristic of an eye. A plurality of axial scans are performed over an area of the retina of the eye. Reflections are measured during the axial scans to determine a plurality of sets of reflection intensity values. A given set of reflection intensity values is associated with one of the plurality of axial scans. A progressive refinement boundary detection algorithm is performed using the plurality of sets of reflection intensity values to determine at least one boundary location associated with the retinal sublayer for each of the plurality of sets of reflection intensity values. The retinal sublayer characteristic is determined in response to the determined boundary locations.
    • 提供了用于测量眼睛的视网膜亚层特征的方法和系统。 在眼睛的视网膜的一个区域上执行多个轴向扫描。 在轴向扫描期间测量反射以确定多组反射强度值。 给定的一组反射强度值与多个轴向扫描中的一个相关联。 使用多组反射强度值执行逐行细化边界检测算法,以针对多组反射强度值中的每一组来确定与视网膜子层相关联的至少一个边界位置。 响应于确定的边界位置来确定视网膜亚层特征。
    • 98. 发明申请
    • METHODS IN A PSEUDO RANDOM AND COMMAND DRIVEN BIT COMPENSATION FOR THE CYCLING EFFECTS IN FLASH MEMORY
    • 闪存中循环效应的PSEUDO随机和命令驱动位补偿方法
    • US20080065813A1
    • 2008-03-13
    • US11530399
    • 2006-09-08
    • Yan LiYupin Kawing Fong
    • Yan LiYupin Kawing Fong
    • G06F12/00
    • G11C7/1006G11C16/3418
    • Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generated pseudo randomization or user driven randomization in different embodiments. User driven commands, the timing of which cannot be predicted may be used to trigger and achieve a high level of randomization. Randomly altering the encoding scheme of the data prevents repeated and long term storage of specific data patterns. Even if a user wishes to store the same information for long periods, or to repeatedly store it, it will be randomly encoded with different encoding schemes, and the data pattern will therefore be varied.
    • 易于实现的闪速存储器EEPROM内的随机化可以减少由于特定数据模式的重复和长期存储而导致的NAND串电阻效应,程序干扰,用户读取干扰以及浮动栅极与浮动栅极耦合。 在不同的实施例中,随机化可以是代码生成的伪随机化或用户驱动的随机化。 用户驱动的命令,其定时不能预测可用于触发和实现高水平的随机化。 随机改变数据的编码方案可防止特定数据模式的重复和长期存储。 即使用户希望长时间存储相同的信息,也可以重复存储,将以不同的编码方式进行随机编码,因此数据模式将会变化。
    • 100. 发明申请
    • SYSTEM THAT COMPENSATES FOR COUPLING DURING PROGRAMMING
    • 在编程期间用于耦合的系统
    • US20080019186A1
    • 2008-01-24
    • US11459002
    • 2006-07-20
    • Yan Li
    • Yan Li
    • G11C11/34G11C16/04G11C16/06
    • G11C7/1045G11C11/5628G11C11/5642G11C16/3418
    • Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
    • 存在于非易失性存储单元的浮动栅极(或其他电荷存储元件)上的表观电荷的变化可能发生,因为基于存储在相邻浮动栅极(或其它相邻电荷存储元件)中的电荷的电场的耦合 )。 为了补偿该耦合,给定存储器单元的读取或编程过程可以考虑相邻存储器单元的编程状态。 为了确定是否需要补偿,可以执行包括感测关于相邻存储器单元的编程状态的信息(例如,在相邻位线或其他位置上)的处理。