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91. 发明申请

US20130269780A1 INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE 审中-公开
标题翻译： I-III-VI2材料层与莫氏体基板之间的界面
公开(公告)号：US20130269780A1
公开(公告)日：2013-10-17
申请号：US13995269
申请日：2011-12-20
申请人： Pierre-Philippe Grand , Jesus Salvadoe Jaime Ferrer , Emmanuel Roche , Hariklia Deligianni , Raman Vaidyanathan , Kathleen B. Reuter , Qiang Huang , Lubomyr Romankiw , Maurice Mason , Donna S. Zupanski-Nielsen
发明人： Pierre-Philippe Grand , Jesus Salvadoe Jaime Ferrer , Emmanuel Roche , Hariklia Deligianni , Raman Vaidyanathan , Kathleen B. Reuter , Qiang Huang , Lubomyr Romankiw , Maurice Mason , Donna S. Zupanski-Nielsen
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
摘要翻译：本发明涉及一种由合金制成并具有光伏特性的薄层制造方法。根据本发明的方法包括第一步骤：a）在衬底（SUB）上沉积适应层（MO）; b）在所述适配层上沉积包含至少元件I和/或III的至少一层（SEED）层。适应层沉积在接近真空条件下，步骤b）包括在与适应层的沉积相同的条件下沉积I和/或III元素的第一层的第一操作，而不暴露于空气中的适配层。

92. 发明申请

US20130206233A1 CHECKING THE STOICHIOMETRY OF I-III-VI LAYERS FOR USE IN PHOTOVOLTAIC USING IMPROVED ELECTROLYSIS CONDITIONS 有权
标题翻译：使用改进的电解质条件检查I-III-VI层在光伏中的使用的测量
公开(公告)号：US20130206233A1
公开(公告)日：2013-08-15
申请号：US13879703
申请日：2011-10-10
申请人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyantahan , Qiang Huang , Shafaat Ahmed
发明人： Pierre-Philippe Grand , Salvador Jaime , Philippe De Gasquet , Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyantahan , Qiang Huang , Shafaat Ahmed
IPC分类号： H01L31/0264 , H01L21/02
CPC分类号： H01L31/0264 , C25D5/10 , C25D7/0692 , C25D21/12 , H01L21/02521 , H01L31/0322 , Y02E10/541
摘要： The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.
摘要翻译：本发明涉及制造用于光伏电池的薄膜形式的I-III-VI化合物，包括以下步骤：a）将由I和/或III元素组成的薄膜结构电沉积到表面上形成衬底（SUB）的电极; 和b）将至少一种VI元素掺入结构中，以获得I-III-VI化合物。根据本发明，电沉积步骤包括检查薄膜厚度的均匀性在接收沉积物的基底的整个表面上变化不超过3％。

93. 发明申请

US20130065345A1 PHOTOVOLTAIC DEVICES WITH METAL SEMICONDUCTOR ALLOY METALLIZATION 审中-公开
标题翻译：具有金属半导体合金金属化的光电器件
公开(公告)号：US20130065345A1
公开(公告)日：2013-03-14
申请号：US13602120
申请日：2012-09-01
申请人： Qiang Huang
发明人： Qiang Huang
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , C25D3/38 , C25D5/12 , C25D5/50 , C25D7/12 , Y02E10/50
摘要： A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer.
摘要翻译：提供了具有改进性能的光电器件，例如太阳能电池。在一个实施例中，光伏器件包括位于半导体衬底的前侧表面的暴露部分上的多金属半导体合金层。多金属半导体合金层至少包含与半导体材料形成合金的第一元素金属和与第一元素金属不同的第二元素金属，并且在与第一元素金属相同的温度下不与半导体材料形成合金第一元素金属。光电器件还包括位于多金属半导体合金层顶部的含铜层。

94. 发明申请

US20120305066A1 USE OF METAL PHOSPHORUS IN METALLIZATION OF PHOTOVOLTAIC DEVICES AND METHOD OF FABRICATING SAME 有权
标题翻译：金属磷在金属化光伏器件中的应用及其制备方法
公开(公告)号：US20120305066A1
公开(公告)日：2012-12-06
申请号：US13154058
申请日：2011-06-06
申请人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao
发明人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022433 , C25D3/38 , C25D3/56 , C25D3/562 , C25D3/567 , C25D3/58 , C25D3/60 , C25D3/62 , C25D3/64 , C25D5/006 , C25D5/10 , C25D5/12 , C25D5/50 , C25D7/12 , H01L21/2885 , H01L21/76841 , H01L23/53238 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1864 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.
摘要翻译：提供了包含含有金属磷层作为扩散阻挡层的含铜网状金属化结构的太阳能电池等太阳能电池。含铜网格金属化结构从底部到顶部包括不包括位于半导体衬底的前侧表面上的栅格图案内的铜或铜合金的电镀金属磷层，以及电镀铜 - 含有层。还提供了一种形成这种结构的方法。

95. 发明申请

US20120268290A1 TECHNOLOGY AND DEVICE FOR PRECISELY MEASURING TEMPERATURE OF CABLE JOINT ON THE BASIS OF RADIO FREQUENCY TECHNIQUE 有权
标题翻译：基于无线电频率技术的电缆接头温度精度测量技术与设备
公开(公告)号：US20120268290A1
公开(公告)日：2012-10-25
申请号：US13142415
申请日：2011-02-24
申请人： Qiang Huang , Chengcai Wu
发明人： Qiang Huang , Chengcai Wu
IPC分类号： G08C15/06
CPC分类号： G01K1/14 , G01K1/024
摘要： The invention provides a method and a device for on-line measuring the inner temperature of a cable joint, the device includes a built-in temperature measurer and an outside receiver. The built-in temperature measurer measures the temperature of the cable joint or a core wire surface by means of direct contact measuring method, and transmits the data to the outside receiver through an insulating layer by means of the radio frequency identification technique. At the same time, the outside receiver supplies power energy to the built-in temperature measurer by means of the radio frequency signal, so it resolves the problem of supplying power to the built-in temperature measurer. The device of the invention has the advantage of accurately measuring temperature, small volume, superior applicability and so on.
摘要翻译：本发明提供一种用于在线测量电缆接头的内部温度的方法和装置，该装置包括内置温度测量器和外部接收器。内置温度测量仪通过直接接触测量方法测量电缆接头或芯线表面的温度，并通过射频识别技术通过绝缘层将数据发送到外部接收器。同时，外部接收机通过射频信号向内置温度测量仪供电，解决了向内置温度测量仪供电的问题。本发明的装置具有精确测量温度，体积小，适用性好等优点。

96. 发明授权

US08247905B2 Formation of vertical devices by electroplating 有权
标题翻译：通过电镀形成垂直装置
公开(公告)号：US08247905B2
公开(公告)日：2012-08-21
申请号：US12538782
申请日：2009-08-10
申请人： Hariklia Deligianni , Qiang Huang , John P. Hummel , Lubomyr T. Romankiw , Mary B. Rothwell
发明人： Hariklia Deligianni , Qiang Huang , John P. Hummel , Lubomyr T. Romankiw , Mary B. Rothwell
IPC分类号： H01L29/40
CPC分类号： H01L21/76879 , H01L21/2885 , Y10S205/925
摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
摘要翻译：本发明涉及通过电镀形成垂直导电结构的方法。具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构延伸穿过ILD层到分立的金属接触垫上。接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。

97. 发明申请

US20120066566A1 ACCESSING MEMORY DURING PARALLEL TURBO DECODING 失效
标题翻译：并行涡轮解码期间的访问记忆
公开(公告)号：US20120066566A1
公开(公告)日：2012-03-15
申请号：US12878934
申请日：2010-09-09
申请人： Zhiqiang Cui , Iwen Yao , Qiang Huang
发明人： Zhiqiang Cui , Iwen Yao , Qiang Huang
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： H03M13/2984 , H03M13/2707 , H03M13/2775 , H03M13/3905 , H03M13/3972 , H03M13/6566
摘要： A method for accessing extrinsic information in a turbo decoder is disclosed. Operation phases for Forward State Metric Calculators (FSMCs) and Reverse State Metric Calculators (RSMCs) in multiple maximum a posteriori probability (MAP) decoders are misaligned differently based on whether a current half iteration is even or odd. First extrinsic information is read from a memory into the FSMCs and RSMCs using the misaligned operation phases. Second extrinsic information is determined using the MAP decoders. Each row of the second extrinsic information is stored to a different bank in the memory using the misaligned operation phases.
摘要翻译：公开了一种在turbo解码器中访问外部信息的方法。基于当前半迭代是偶数还是奇数，多个最大后验概率（MAP）解码器中的前向状态度量计算器（FSMC）和反向状态度量计算器（RSMC）的操作阶段不对齐。使用不对齐的操作阶段，将第一外部信息从存储器读入FSMC和RSMC。使用MAP解码器确定第二外在信息。使用未对准的操作阶段将第二外在信息的每一行存储在存储器中的不同存储体中。

98. 发明授权

US08115191B2 Self-constrained anisotropic germanium nanostructure from electroplating 有权
标题翻译：电镀自限制各向异性锗纳米结构
公开(公告)号：US08115191B2
公开(公告)日：2012-02-14
申请号：US12541559
申请日：2009-08-14
申请人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L21/302
CPC分类号： C25D3/54 , B82Y10/00 , C25D5/022 , C25D7/123 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02639 , Y10S977/762
摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
摘要翻译：提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。

99. 发明授权

US08008199B2 Microstructure modification in copper interconnect structure 失效
标题翻译：铜互连结构中的微结构改性
公开(公告)号：US08008199B2
公开(公告)日：2011-08-30
申请号：US12869113
申请日：2010-08-26
申请人： Brett C. Baker-O'Neal , Cyril Cabral, Jr. , Qiang Huang , Kenneth P. Rodbell
发明人： Brett C. Baker-O'Neal , Cyril Cabral, Jr. , Qiang Huang , Kenneth P. Rodbell
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译：为了改变铜线和通孔的微观结构，将钴添加到铜种子层，铜镀层或铜覆盖层。钴可以是铜 - 钴合金的形式或作为非常薄的钴层。本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面，并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。

100. 发明申请

US20100323517A1 MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE 失效
标题翻译：铜互连结构中的微观结构修改
公开(公告)号：US20100323517A1
公开(公告)日：2010-12-23
申请号：US12869113
申请日：2010-08-26
申请人： Brett C. Baker-O'Neal , Cyril Cabral, JR. , Qiang Huang , Kenneth P. Rodbell
发明人： Brett C. Baker-O'Neal , Cyril Cabral, JR. , Qiang Huang , Kenneth P. Rodbell
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译：为了改变铜线和通孔的微观结构，将钴添加到铜种子层，铜镀层或铜覆盖层。钴可以是铜 - 钴合金的形式或作为非常薄的钴层。本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面，并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。

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