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91. 发明授权

US08077503B2 Electronic devices utilizing spin torque transfer to flip magnetic orientation 有权
公开(公告)号：US08077503B2
公开(公告)日：2011-12-13
申请号：US13070542
申请日：2011-03-24
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

92. 发明申请

US20100085803A1 ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC ORIENTATION 有权
标题翻译：使用旋转扭矩的电子设备转移到浮动磁场定向
公开(公告)号：US20100085803A1
公开(公告)日：2010-04-08
申请号：US12415243
申请日：2009-03-31
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00 , H01L29/82 , G11C11/14
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.
摘要翻译：电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造，并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

93. 发明授权

US08077502B2 Electronic devices utilizing spin torque transfer to flip magnetic orientation 有权
公开(公告)号：US08077502B2
公开(公告)日：2011-12-13
申请号：US13070540
申请日：2011-03-24
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

94. 发明申请

US20110176360A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM) UTILIZING MAGNETIC FLIP-FLOP STRUCTURES 有权
标题翻译：磁性随机存取存储器（MRAM）利用磁性FLIP-FLOP结构
公开(公告)号：US20110176360A1
公开(公告)日：2011-07-21
申请号：US13074384
申请日：2011-03-29
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/14
CPC分类号： H01L27/224 , G11C7/04 , G11C11/161 , G11C11/1659 , H01L43/08
摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current; a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer. MRAM cells that include such devices and arrays including such cells are also disclosed.
摘要翻译：包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个稳定的整体磁性结构，并且其中施加到器件的第一单极电流将引起磁化控制结构的取向反转其取向，并且施加到电子器件的第二单极电流将导致磁化可控结构切换其磁化，使得该器件达到两种稳定的总体磁性结构中的一种，其中第二单极性电流的振幅小于第一单极性电流; 第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。还公开了包括这样的装置和包括这种细胞的阵列的MRAM细胞。

95. 发明授权

US08482971B2 Diode assisted switching spin-transfer torque memory unit 有权
标题翻译：二极管辅助开关自旋转移转矩存储单元
公开(公告)号：US08482971B2
公开(公告)日：2013-07-09
申请号：US13472867
申请日：2012-05-16
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

96. 发明授权

US08199569B2 Diode assisted switching spin-transfer torque memory unit 有权
标题翻译：二极管辅助开关自旋转移转矩存储单元
公开(公告)号：US08199569B2
公开(公告)日：2012-06-12
申请号：US13087517
申请日：2011-04-15
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

97. 发明申请

US20110194334A1 DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT 有权
标题翻译：二极管辅助开关转子转矩记忆单元
公开(公告)号：US20110194334A1
公开(公告)日：2011-08-11
申请号：US13087517
申请日：2011-04-15
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/36
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

98. 发明授权

US07944742B2 Diode assisted switching spin-transfer torque memory unit 有权
标题翻译：二极管辅助开关自旋转移转矩存储单元
公开(公告)号：US07944742B2
公开(公告)日：2011-05-17
申请号：US12861932
申请日：2010-08-24
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

99. 发明申请

US20100315865A1 DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT 有权
标题翻译：二极管辅助开关转子转矩记忆单元
公开(公告)号：US20100315865A1
公开(公告)日：2010-12-16
申请号：US12861932
申请日：2010-08-24
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

100. 发明授权

US07804709B2 Diode assisted switching spin-transfer torque memory unit 有权
标题翻译：二极管辅助开关自旋转移转矩存储单元
公开(公告)号：US07804709B2
公开(公告)日：2010-09-28
申请号：US12175724
申请日：2008-07-18
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

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