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    • 94. 发明授权
    • Method of forming vias in semiconductor substrates and resulting structures
    • 在半导体衬底和结构中形成通孔的方法
    • US07855140B2
    • 2010-12-21
    • US11781083
    • 2007-07-20
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • H01L21/4763
    • H01L21/76898
    • Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.
    • 公开了在半导体衬底中形成贯通孔的方法和所得到的结构。 在一个实施例中,可以通过从活性表面通过其上的导电元件和导电元件下面的基底的一部分形成部分通孔来形成通孔。 然后可以通过从后表面的激光烧蚀或钻孔来完成通孔。 在另一个实施例中,部分通孔可以通过激光烧蚀或从衬底的背面钻孔到其中的预定距离来形成。 通孔可以通过形成延伸通过导电元件和下面的衬底以与激光钻孔的部分通孔相交的部分通孔从活性表面完成。 在另一个实施例中,可以首先通过激光烧蚀或从衬底的背面进行钻孔形成部分通孔,然后通过干蚀刻来完成通孔。