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91. 发明申请

US20080054464A1 Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054464A1
公开(公告)日：2008-03-06
申请号：US11630799
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A 1），阻挡金属膜（A 1）包括金属氧化物膜（7），金属化合物膜（8）和从绝缘膜（6）存在的一侧到存在金属互连（10）的一侧依次堆叠的金属膜（9）。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

92. 发明申请

US20060286816A1 Method for fabricating semiconductor device and semiconductor device 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20060286816A1
公开(公告)日：2006-12-21
申请号：US11471491
申请日：2006-06-21
申请人： Nobuo Aoi , Hideo Nakagawa
发明人： Nobuo Aoi , Hideo Nakagawa
IPC分类号： H01L21/4763 , H01L23/58 , H01L21/31
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/3185 , H01L21/76832 , H01L21/76849 , H01L21/76867 , H01L21/76886
摘要： A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在设置在衬底上的绝缘膜中形成的铜互连件的暴露部分中形成含氮层; 通过使用具有硅氧烷（Si-O-Si）键的有机硅化合物作为材料，通过等离子体CVD在含氮层上形成层间绝缘膜。

93. 发明申请

US20050059231A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050059231A1
公开(公告)日：2005-03-17
申请号：US10958282
申请日：2004-10-06
申请人： Hideo Nakagawa , Eiji Tamaoka , Masafumi Kubota , Tetsuya Ueda
发明人： Hideo Nakagawa , Eiji Tamaoka , Masafumi Kubota , Tetsuya Ueda
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/48 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/288 , H01L21/2885 , H01L21/32051 , H01L21/76879 , H01L21/76885 , H01L21/76897 , H01L23/5222 , H01L23/5226 , H01L23/5228 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.
摘要翻译：半导体器件包括由半导体衬底上形成的第一金属膜和夹在其间的绝缘膜构成的多层膜和沉积在第一金属膜上的第二金属膜制成的金属互连。在金属互连件上形成具有通孔的层间绝缘膜。选择性地在通孔内的第二金属膜上生长第三金属膜，从而能够从第三金属膜形成插塞。

94. 发明授权

US06828247B2 Method for etching organic film, method for fabricating semiconductor device and pattern formation method 失效
标题翻译：蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法
公开(公告)号：US06828247B2
公开(公告)日：2004-12-07
申请号：US10214754
申请日：2002-08-09
申请人： Hideo Nakagawa , Toshio Hayashi , Yasuhiro Morikawa
发明人： Hideo Nakagawa , Toshio Hayashi , Yasuhiro Morikawa
IPC分类号： H01L21302
CPC分类号： H01L21/7681 , H01L21/31138 , H01L21/76804 , H01L21/76831 , Y10S438/905
摘要： An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.
摘要翻译：通过使用由包括以包含碳，氢和氮的化合物为主要成分的第一气体和包含氮成分的第二气体的蚀刻气体产生的等离子体蚀刻有机膜。

95. 发明授权

US5470106A Air bag having a high burst strength 失效
标题翻译：气袋具有很高的爆裂强度
公开(公告)号：US5470106A
公开(公告)日：1995-11-28
申请号：US211500
申请日：1994-04-07
申请人： Kunio Nishimura , Hideo Nakagawa , Nobuo Takahashi
发明人： Kunio Nishimura , Hideo Nakagawa , Nobuo Takahashi
IPC分类号： B60R21/16
CPC分类号： B60R21/23
摘要： The air bag of the present invention having an excellent burst strength is formed from substantially circular bottom and top cloths each consisting of a woven fabric, the bottom cloth is reinforced with an apron formed from a woven fabric, arranged around a hole for connecting an inflator to the air bag and seam-joined to the bottom cloth, the apron has an outermost circumferential seam line in a quadrilateral form such as a substantially regular square, rhombic or rectangular form, preferably a regular square form, having the same center point as that of the inflator-connecting hole, and the outermost circumferential quadrilateral seam line satisfies the requirements (1) and (2):(1) in an imaginary circle having a diameter Dw and drawn around the same center as that of the inflator-connecting hole on the apron in such a manner that at least one pair of vertexes of the outermost quadrilateral seam line, spaced at a largest diagonal distance from each other is inscribed in the imaginary circle, a ratio of each of straight line distance Da and Db between one of the inscribed vertexes and each of two vertexes adjacent to the inscribed vertex to the diameter Dw is 0.6/1 to 0.9/1, and(2) a ratio of each of Da and Db to a diameter De of the circular bottom cloth is 0.5/1 or less.
摘要翻译： PCT No.PCT / JP93 / 01162 Sec。 371日期1994年4月7日 102（e）1994年4月7日PCT PCT 1993年8月19日PCT公布。出版物WO94 / 04396 日本公报1994年3月3日。具有优异爆裂强度的本发明的气囊由基本圆形的底部和顶部布料形成，每个布由机织织物组成，底布用由机织织物形成的围裙加强，围绕用于将充气器连接到气囊并且接合到底布的孔，围裙具有四边形形式的最外周边接缝线，例如基本上规则的正方形，菱形或矩形形式，优选地是正方形形状，具有与充气机连接孔相同的中心点，并且最外周四边形缝线满足要求（1）和（2）：（1）在具有直径Dw并围绕相同中心拉伸的假想圆中围裙上的充气机连接孔的位置，使得最外侧的四边形接缝线的至少一对顶点彼此间距最大的对角线距离是内切的在一个内接顶点和与内切顶点相邻的两个顶点中的每一个之间的直线距离Da和Db之间的直径Dw的比率为0.6 / 1至0.9 / 1，（2） Da和Db中的每一个与圆底布的直径De之比为0.5 / 1或更小。

96. 发明授权

US08968972B2 Photomask blank, process for production of photomask, and chromium-containing material film 有权
标题翻译：光掩模坯料，光掩模生产工艺和含铬材料膜
公开(公告)号：US08968972B2
公开(公告)日：2015-03-03
申请号：US13883850
申请日：2011-11-18
申请人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
发明人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
IPC分类号： G03F1/50 , C22C27/06 , G03F1/54 , G03F1/80 , C23C14/06 , G03F1/30
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
摘要翻译：在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持与常规含铬材料膜相同的光学特性等，从而提高图案形成精度。

97. 发明申请

US20090042403A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20090042403A1
公开(公告)日：2009-02-12
申请号：US12244469
申请日：2008-10-02
申请人： Nobuo Aoi , Hideo Nakagawa
发明人： Nobuo Aoi , Hideo Nakagawa
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/3185 , H01L21/76832 , H01L21/76849 , H01L21/76867 , H01L21/76886
摘要： A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在设置在衬底上的绝缘膜中形成的铜互连件的暴露部分中形成含氮层; 通过使用具有硅氧烷（Si-O-Si）键的有机硅化合物作为材料，通过等离子体CVD在含氮层上形成层间绝缘膜。

98. 发明申请

US20080188076A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080188076A1
公开(公告)日：2008-08-07
申请号：US11898140
申请日：2007-09-10
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.
摘要翻译：在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为电极。阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

99. 发明申请

US20080083989A1 Semiconductor Device and Method for Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080083989A1
公开(公告)日：2008-04-10
申请号：US10578351
申请日：2005-05-20
申请人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
发明人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： A semiconductor device includes insulation films (6 and 8) formed over a silicon substrate (1), a buried wire (14) formed in the insulation films (6 and 8), and a barrier metal film (A1) formed between each of the insulation films (6 and 8) and the buried wire (14). The barrier metal film (A1) is formed of a metal oxide film (11), a transition layer (12a) and a metal film (13) stacked in this order in the direction from a side of the barrier metal film (A1) at which the insulation films (6 and 8) exists to a side thereof at which the buried wire (14) exists. The transition layer (12a) is formed of a single atomic layer having substantially an intermediate composition between respective compositions of the metal oxide film (11) and the metal film (13).
摘要翻译：半导体器件包括形成在硅衬底（1）上的绝缘膜（6和8），形成在绝缘膜（6和8）中的掩埋线（14）和形成在绝缘膜（6和8）之间的阻挡金属膜绝缘膜（6和8）和掩埋线（14）。阻挡金属膜（A 1）由金属氧化物膜（11），过渡层（12a）和金属膜（13）沿着从阻挡金属膜（A 1），其中绝缘膜（6和8）存在于存在埋地线（14）的一侧。过渡层（12a）由在金属氧化物膜（11）和金属膜（13）的各组成之间基本上具有中间组成的单一原子层形成。

100. 发明授权

US07282452B2 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US07282452B2
公开(公告)日：2007-10-16
申请号：US10679464
申请日：2003-10-07
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCx−HyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：由SiC x-x O x z（x> 0，y> = 0，z> 0）表示的有机/无机混合膜，用含氟，碳和氮的蚀刻气体进行等离子体蚀刻。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

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