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91. 发明申请

US20110259851A1 SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION 有权
标题翻译：用于控制离子能量分布的系统，方法和装置
公开(公告)号：US20110259851A1
公开(公告)日：2011-10-27
申请号：US12870837
申请日：2010-08-29
申请人： Victor Brouk , Randy Heckman , Daniel J. Hoffman
发明人： Victor Brouk , Randy Heckman , Daniel J. Hoffman
IPC分类号： C23F1/00 , C23C16/52 , C23C16/458 , C23F1/08 , C23C16/50
CPC分类号： H01J37/24 , C23C14/345 , C23C16/50 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能量的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

92. 发明授权

US08021521B2 Method for agile workpiece temperature control in a plasma reactor using a thermal model 有权
标题翻译：使用热模型的等离子体反应器中敏捷工件温度控制的方法
公开(公告)号：US08021521B2
公开(公告)日：2011-09-20
申请号：US11408558
申请日：2006-04-21
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , Williams W. Cowans , Glenn W. Zubillaga , Isaac Millian
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , Williams W. Cowans , Glenn W. Zubillaga , Isaac Millian
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.
摘要翻译：在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力从热模型。

93. 发明授权

US08012304B2 Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
标题翻译：具有多区域热控制前馈控制装置的等离子体反应器
公开(公告)号：US08012304B2
公开(公告)日：2011-09-06
申请号：US11408559
申请日：2006-04-21
申请人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： H01L21/306 , C23C16/46 , C23C16/52
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及联接到所述静电卡盘的相应内部和外部区域的内部和外部区域热交换器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

94. 发明授权

US08002945B2 Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator 有权
标题翻译：通过不匹配的低功率RF发生器的同步调制，设计瞬变的等离子体负载阻抗调谐方法
公开(公告)号：US08002945B2
公开(公告)日：2011-08-23
申请号：US12129024
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23F1/00
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/321 , H01J37/32183 , H01J37/32935
摘要： A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
摘要翻译：提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。

95. 发明申请

US20110201134A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：具有磁性等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20110201134A1
公开(公告)日：2011-08-18
申请号：US13081005
申请日：2011-04-06
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

96. 发明授权

US07972467B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor 失效
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07972467B2
公开(公告)日：2011-07-05
申请号：US10418996
申请日：2003-04-17
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

97. 发明申请

US20100319851A1 PLASMA REACTOR WITH FEED FORWARD THERMAL CONTROL SYSTEM USING A THERMAL MODEL FOR ACCOMMODATING RF POWER CHANGES OR WAFER TEMPERATURE CHANGES 有权
标题翻译：具有前馈热控制系统的等离子体反应器，使用热模型来适应RF功率变化或波形温度变化
公开(公告)号：US20100319851A1
公开(公告)日：2010-12-23
申请号：US12855674
申请日：2010-08-12
申请人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： C23F1/08 , H01L21/306
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递，以及耦合到热模型和存储器的控制处理器，并且响应于所述温度传感器控制背侧气体压力源从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

98. 发明授权

US07848898B2 Method for monitoring process drift using plasma characteristics 失效
标题翻译：使用等离子体特性监测过程漂移的方法
公开(公告)号：US07848898B2
公开(公告)日：2010-12-07
申请号：US12355130
申请日：2009-01-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of current and voltage information of a first waveform coupled to a plasma during a plasma process formed on a substrate, obtaining metrics of current and voltage information of a second waveform coupled to the plasma during the plasma process formed on the substrate, the first and second waveforms having different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform, and adjusting the plasma process in response to the determined at least one characteristic of the plasma.
摘要翻译：提供了使用等离子体特性监测过程漂移的方法。在一个实施例中，使用等离子体特性来监测过程漂移的方法包括获得在形成在衬底上的等离子体工艺期间耦合到等离子体的第一波形的电流和电压信息的度量，获得耦合的第二波形的电流和电压信息的度量在形成在衬底上的等离子体工艺期间等离子体，第一和第二波形具有不同的频率，使用从每个不同频率波形获得的度量确定等离子体的至少一个特性，以及响应于所确定的等离子体处理等离子体的至少一个特征。

99. 发明授权

US07795153B2 Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters 有权
标题翻译：基于所选择的等离子体参数的预定并行行为作为所选腔室参数的函数来控制腔室的方法
公开(公告)号：US07795153B2
公开(公告)日：2010-09-14
申请号：US11608996
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32935
摘要： The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch rate, wafer current and possibly other plasma parameters. The chamber parameters may be selected from a group including source power, bias power, chamber pressure, magnet coil current of different coils, gas flow rate in different gas injection zones, gas species composition in different gas injection zones, and possibly other chamber parameters. The method begins with a first step carried out for each one of the selected plasma parameters. This first step consists of fetching from a memory a relevant surface of constant value corresponding to the user-selected value of the one plasma parameter, the surface being defined in a N-dimensional space of which each of the N chamber parameters is a dimension. This step further includes determining an intersection of these relevant surfaces, the intersection corresponding to a target value of each of the N chamber parameter. The method further includes setting each of the N chamber parameters to the corresponding target value.
摘要翻译：本发明涉及通过控制多个室参数，根据用户选择的多个（即N个）等离子体参数的值，在等离子体反应器室中的工件支撑基座上加工工件的方法。等离子体参数可以从包括离子密度，晶片电压，蚀刻速率，晶片电流以及可能的其它等离子体参数的组中选择。室参数可以从包括源功率，偏置功率，室压力，不同线圈的电磁线圈电流，不同气体注入区中的气体流量，不同气体注入区域中的气体种类组成以及可能的其它室参数的组中选择。该方法从针对所选等离子体参数中的每一个执行的第一步骤开始。该第一步骤包括从存储器取出对应于一个等离子体参数的用户选择值的恒定值的相关表面，该表面在N维空间中被限定，其中每个N室参数是维度。该步骤还包括确定这些相关表面的交点，与N室参数中的每一个的目标值相对应的交点。该方法还包括将每个N室参数设置为相应的目标值。

100. 发明申请

US20100089748A1 CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET 审中-公开
标题翻译：控制电介质射频射灯目标的腐蚀特性
公开(公告)号：US20100089748A1
公开(公告)日：2010-04-15
申请号：US12252224
申请日：2008-10-15
申请人： JOHN C.FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , RongJun Wang
发明人： JOHN C.FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , RongJun Wang
IPC分类号： C23C14/34 , B32B37/12
CPC分类号： C23C14/3407 , H01J37/32082 , H01J37/3408 , H01J37/347 , Y10T156/10
摘要： The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.
摘要翻译：本发明通常包括可用于RF溅射工艺中的溅射靶组件。溅射靶组件可以包括背板和溅射靶。背板可以被成形为具有从背板朝向溅射靶延伸的一个或多个翅片。溅射靶可以结合到背板的翅片上。在溅射过程中使用的RF电流将被施加到在一个或多个鳍位置处的溅射靶。翅片可以在对应于可以设置在背板后面的磁控管产生的磁场的位置处从背板延伸。通过控制RF电流耦合到溅射靶以与磁场对准的位置，可以控制溅射靶的侵蚀。

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