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91. 发明授权

US08009599B2 Wireless communication device and wireless communication method 有权
标题翻译：无线通信设备和无线通信方式
公开(公告)号：US08009599B2
公开(公告)日：2011-08-30
申请号：US11687845
申请日：2007-03-19
申请人： Kei Igarashi , Akira Yamada
发明人： Kei Igarashi , Akira Yamada
IPC分类号： H04Q7/20
CPC分类号： H04B1/0475 , H04B1/1027 , H04W16/14 , H04W56/00 , H04W72/082
摘要： A wireless communication device that transmits packets, on the basis of a packet transmission scheme for allocating wireless bands with virtual carrier sensing, has: monitoring module for monitoring packets communicated between other wireless communication devices and base stations for a local cell and another cell; determination module for determining whether a possibility exists that a local station receives other-cell interference resulting from communication between the wireless communication device in the other cell and the base station, on the basis of the monitoring result; occupancy period detection module for detecting an occupancy period occupied due to communication between the wireless communication device in the other cell and the base station, on the basis of the monitoring results, when determination is made that receiving the other-cell interference is possible; and timing recognition module for recognizing a timing for avoiding the other-cell interference in a predetermined period on the basis of the occupancy period.
摘要翻译：基于用于分配具有虚拟载波感测的无线频带的分组传输方案来发送分组的无线通信装置具有：监视模块，用于监视在本地小区和另一小区之间在其他无线通信设备和基站之间传送的分组; 确定模块，用于基于监视结果确定本地站是否接收到由另一小区中的无线通信设备与基站之间的通信产生的其他小区干扰的可能性; 占用周期检测模块，用于当确定可能接收到其他小区干扰时，基于监视结果，检测由于另一小区中的无线通信设备与基站之间的通信而占用的占用周期; 以及定时识别模块，用于基于占用周期来识别在预定周期内避免其他小区干扰的定时。

92. 发明授权

US07942600B2 Coupling apparatus for passage blocks 有权
标题翻译：通道接头装置
公开(公告)号：US07942600B2
公开(公告)日：2011-05-17
申请号：US11921759
申请日：2005-06-09
申请人： Akira Yamada
发明人： Akira Yamada
IPC分类号： F16C11/06
CPC分类号： F16K27/003 , Y10T137/9029 , Y10T403/25 , Y10T403/255 , Y10T403/7015
摘要： A passage block coupling apparatus including a bolt insertion hole 13 and a pin insertion hole 14 formed in an upper-stage passage block 3, a screw hole 15 and a non-screw hole 16 that are formed in a lower-stage passage block 4, a bolt 11 that is inserted into the bolt insertion hole 13, and threaded with the screw hole 15, and a positioning pin 12 that is inserted to the pin insertion hole 14, with its lower end portion being fitted to the non-screw hole 16. A cut-out section 17 is formed near the lower end portion of the positioning pin 12, and a protruding portion 18 to be fitted to the cut-out section 17 is formed on the opening portion of the non-screw hole 16. A tightening force exerted by the bolt 11 and a force exerted by the lower end portion of the positioning pin 12 to press the protruding portion 18 of the non-screw hole 16 upward are balanced with each other so that an evenly fastened state is achieved so that the passage blocks 3 and 4 are coupled with each other.
摘要翻译：一种通道块联接装置，包括形成在下段通道块4中的上段通道块3，螺纹孔15和非螺纹孔16中的螺栓插入孔13和销插入孔14，插入螺栓插入孔13并与螺纹孔15螺纹连接的螺栓11和插入销插入孔14的定位销12，其下端部嵌合在非螺纹孔16上在定位销12的下端部附近形成切口部17，在非螺纹孔16的开口部形成有与切出部17嵌合的突出部18。由螺栓11施加的紧固力和由定位销12的下端部分施加的力向上挤压非螺钉孔16的突出部分18彼此平衡，从而实现均匀的紧固状态，使得通道块3和4彼此连接。

93. 发明申请

US20100292138A1 Peptide Derived from Hepatitis C Virus 审中-公开
标题翻译：来源于丙型肝炎病毒的肽
公开(公告)号：US20100292138A1
公开(公告)日：2010-11-18
申请号：US12223062
申请日：2007-01-23
申请人： Akira Yamada , Kyogo Itoh , Michio Sata , Shigeru Yutani
发明人： Akira Yamada , Kyogo Itoh , Michio Sata , Shigeru Yutani
IPC分类号： A61K38/08 , A61P31/14
CPC分类号： G01N33/505 , A61K39/00 , A61K39/12 , A61K39/29 , A61K2039/57 , C07K14/005 , C12N2770/24222 , C12N2770/24234 , G01N33/56977 , G01N2333/18
摘要： Disclosed is a pharmaceutical composition for the treatment of an HCV-related disease in a patient having HLA-A24 or -A3 supertype, wherein the pharmaceutical composition comprises a peptide having an amino acid sequence represented by the formula: YLLPRRGPRL (SEQ ID NO:1) as an active ingredient. Also disclosed is a composition for use in the detection of the induction of an HLA-A24 or -A3 supertype-restricted cytotoxic T cell in a patient having HLA-A24 or -A3 supertype, wherein the composition comprises a peptide having an amino acid sequence depicted in SEQ ED NO:1 as an active ingredient.
摘要翻译：公开了一种用于治疗具有HLA-A24或-A3超型的患者中的HCV相关疾病的药物组合物，其中所述药物组合物包含具有由下式表示的氨基酸序列的肽：YLLPRRGPRL（SEQ ID NO：1 ）作为活性成分。还公开了用于检测具有HLA-A24或-A3超型的患者中HLA-A24或-A3超型限制性细胞毒性T细胞的诱导的组合物，其中所述组合物包含具有氨基酸序列的肽如SEQ ID NO：1所示为活性成分。

94. 发明授权

US07833587B2 Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition 有权
标题翻译：等离子体增强化学气相沉积方法和等离子体增强化学气相沉积装置
公开(公告)号：US07833587B2
公开(公告)日：2010-11-16
申请号：US10518371
申请日：2003-10-29
申请人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
发明人： Hiroshi Mashima , Akira Yamada , Keisuke Kawamura , Kenji Tagashira , Yoshiaki Takeuchi
IPC分类号： H05H1/24 , C23C16/00 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32577
摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
摘要翻译：提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。安装具有标准长度和真空电缆（20a〜20h，25a〜25h）的同轴电缆（19a〜19h，24a〜24h），通过实际供给高频电力而在基板上形成膜，之后，观察气相沉积的条件，如膜的厚度。基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调整的衬底上的位置。再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。通过重复上述操作，使形成在基板上的膜的分布均匀。

95. 发明申请

US20100278851A1 CTL INDUCER COMPOSITION 有权
标题翻译： CTL电感组合物
公开(公告)号：US20100278851A1
公开(公告)日：2010-11-04
申请号：US12733686
申请日：2008-09-12
申请人： Kyogo Itoh , Shigeki Shichijo , Akira Yamada
发明人： Kyogo Itoh , Shigeki Shichijo , Akira Yamada
IPC分类号： A61K39/00 , A61P1/16 , A61K38/00 , A61P35/00
CPC分类号： A61K38/179 , A61K9/0019 , A61K38/00 , A61K38/1764 , A61K39/00 , A61K39/0011 , A61K39/005 , A61K2039/57 , A61K2039/572 , C07K7/06 , C07K14/005 , C12N2770/24222
摘要： The present invention provides a CTL inducer composition which comprises one or more peptides selected from the group consisting of the peptides of SEQ ID NOS: 1 to 27 in the Sequence Listing, and can be used for the treatment or prevention of cancer or a hepatitis C virus-related disease in two or more patient groups selected from the group consisting of an HLA-A2 positive patient group, an HLA-A24 positive patient group, an HLA-A26 positive patient group, and an HLA-A3 supertype positive patient group.
摘要翻译：本发明提供一种CTL诱导剂组合物，其包含一种或多种选自序列表中SEQ ID NO：1至27的肽的肽，并且可用于治疗或预防癌症或丙型肝炎选自HLA-A2阳性患者组，HLA-A24阳性患者组，HLA-A26阳性患者组和HLA-A3超型阳性患者组的两个或更多个患者组中的病毒相关疾病。

96. 发明授权

US07799623B2 Method for manufacturing semiconductor device having LDMOS transistor 有权
标题翻译：具有LDMOS晶体管的半导体器件的制造方法
公开(公告)号：US07799623B2
公开(公告)日：2010-09-21
申请号：US12654230
申请日：2009-12-15
申请人： Akira Yamada
发明人： Akira Yamada
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/7824 , H01L29/0634 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/66681 , H01L29/78603
摘要： A semiconductor device includes: a semiconductor substrate having a first semiconductor layer, an insulation layer and a second semiconductor layer, which are stacked in this order; a LDMOS transistor disposed on the first semiconductor layer; and a region having a dielectric constant, which is lower than that of the first or second semiconductor layer. The region contacts the insulation layer, and the region is disposed between a source and a drain of the LDMOS transistor. The device has high withstand voltage in a direction perpendicular to the substrate.
摘要翻译：半导体器件包括：具有第一半导体层，绝缘层和第二半导体层的半导体衬底，其按此顺序堆叠; 设置在所述第一半导体层上的LDMOS晶体管; 以及具有低于第一或第二半导体层的介电常数的区域。该区域接触绝缘层，并且该区域设置在LDMOS晶体管的源极和漏极之间。该器件在垂直于衬底的方向上具有高耐受电压。

97. 发明授权

US07738481B2 Wireless communication device and wireless communication method 有权
标题翻译：无线通信设备和无线通信方式
公开(公告)号：US07738481B2
公开(公告)日：2010-06-15
申请号：US11671280
申请日：2007-02-05
申请人： Kei Igarashi , Akira Yamada , Atsushi Fujiwara , Takatoshi Sugiyama
发明人： Kei Igarashi , Akira Yamada , Atsushi Fujiwara , Takatoshi Sugiyama
IPC分类号： H04L12/413
CPC分类号： H04W72/1221 , H04L1/1887 , H04L65/80 , H04W28/18 , H04W74/085
摘要： A wireless communication device that performs packet transmission in accordance with a packet transmission system that performs wireless bandwidth allocation by virtual carrier sensing has a time-point management section that manages the time-point and outputs current time-point information, and a parameter management section that manages a parameter relating to packet transmission right acquisition priority. The parameter management section includes: a parameter holding section that holds, in association with a time-point, a parameter relating to packet transmission right acquisition priority that changes with a different distribution between wireless communication devices located in the same wireless LAN area, in a prescribed period; and a parameter alteration section that reads, from the parameter holding section, the parameter associated with current time-point information and dynamically alters a current parameter relating to packet transmission right acquisition priority in accordance with the parameter thus read.
摘要翻译：根据通过虚拟载波侦听执行无线带宽分配的分组传输系统执行分组传输的无线通信装置具有管理时间点并输出当前时间点信息的时间点管理部分，以及参数管理部分管理与分组传输权获取优先级相关的参数。参数管理部分包括：参数保持部分，其在时间点中保持与位于同一无线LAN区域中的无线通信设备之间以不同分布发生变化的分组发送权获取优先级相关的参数，规定期限以及参数修改部，其从参数保持部读取与当前时间点信息相关联的参数，并且根据所读取的参数动态地改变与分组发送权获取优先级有关的当前参数。

98. 发明授权

US07731162B2 Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method 有权
标题翻译：蒸发系统液体物质供应装置，蒸发器，蒸发性能评价方法
公开(公告)号：US07731162B2
公开(公告)日：2010-06-08
申请号：US12219583
申请日：2008-07-24
申请人： Naoki Yoshioka , Tatsushi Kawamoto , Mitsushi Kawao , Shigeru Matsuno , Akira Yamada , Shoji Miyashita , Fusaoki Uchikawa
发明人： Naoki Yoshioka , Tatsushi Kawamoto , Mitsushi Kawao , Shigeru Matsuno , Akira Yamada , Shoji Miyashita , Fusaoki Uchikawa
IPC分类号： B01F3/04
CPC分类号： F16K11/207 , B01D1/0082 , C23C16/448 , C23C16/4486 , F16K31/1221 , Y10S261/65
摘要： In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.
摘要翻译：在液体物质供给装置中，三端口二阀方向控制阀设置在输送管线中，物质容器和输送管线通过四端口三阀方向控制阀连接在一起，使得四端口三阀方向控制阀和物质容器可以作为一个单元从输送管线中取出。此外，在蒸发器中，设置有用于包围内部导管的端部的孔部件，在内部导管的端部，将由气体和与其混合的液体物质构成的混合物流动，将用于雾化的气体通过间隙喷射到蒸发室内限定在内部管道和孔口构件之间。此外，可以根据液体物质的性质独立地控制蒸发室中的汽化表面的温度。

99. 发明授权

US07721793B2 Vapor-lift pump heat transport apparatus 有权
标题翻译：蒸汽提升泵热输送装置
公开(公告)号：US07721793B2
公开(公告)日：2010-05-25
申请号：US11562500
申请日：2006-11-22
申请人： Shigetoshi Ippoushi , Nobuaki Uehara , Akira Yamada , Tetsuro Ogushi , Hisaaki Yamakage
发明人： Shigetoshi Ippoushi , Nobuaki Uehara , Akira Yamada , Tetsuro Ogushi , Hisaaki Yamakage
IPC分类号： F28D15/00 , F28F13/06
CPC分类号： F28D15/0266 , F24T10/10 , F24T10/30 , F28D20/0052 , F28F2250/08 , Y02E10/12 , Y02E10/16 , Y02E60/142
摘要： A vapor-lift pump heat transport apparatus having a small heat resistance and a large heat transport capacity. A heat exchange circulating solution container has a first space and a second space communicating with the first space through a communication opening and contains a heat exchange circulating solution, and vapor thereof, in each space. A circulating solution transport passage includes a pipe connected to the solution outlet of the container and provided with a sensible heat releasing heat exchanger, a pipe disposed in the container, and a pipe connected to a vapor-liquid two-phase fluid inlet and provided with a heating heat exchanger. A vapor-liquid two-phase fluid flows into only the first space through the vapor-liquid two-phase fluid inlet. When the entrance of the vapor-liquid two-phase fluid has caused a pressure difference between the first and second spaces, a difference occurs between the positions of the vapor-liquid interfaces in the first and second spaces.
摘要翻译：一种具有小的耐热性和大的传热能力的蒸汽提升泵热输送装置。热交换循环溶液容器具有通过连通口与第一空间连通的第一空间和第二空间，并且在每个空间中包含热交换循环溶液及其蒸汽。循环溶液输送通道包括连接到容器的溶液出口并配有显热放热换热器的管，设置在容器中的管和连接到气液二相流体入口的管，并配有一个加热热交换器。气液两相流体仅通过气液两相流体入口流入第一空间。当气液两相流体的入口已经引起第一和第二空间之间的压力差时，在第一和第二空间中的气液界面的位置之间出现差异。

100. 发明申请

US20100099225A1 Method for manufacturing semiconductor device having LDMOS transistor 有权
公开(公告)号：US20100099225A1
公开(公告)日：2010-04-22
申请号：US12654230
申请日：2009-12-15
申请人： Akira Yamada
发明人： Akira Yamada
IPC分类号： H01L21/762
CPC分类号： H01L29/7824 , H01L29/0634 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/66681 , H01L29/78603
摘要： A semiconductor device includes: a semiconductor substrate having a first semiconductor layer, an insulation layer and a second semiconductor layer, which are stacked in this order; a LDMOS transistor disposed on the first semiconductor layer; and a region having a dielectric constant, which is lower than that of the first or second semiconductor layer. The region contacts the insulation layer, and the region is disposed between a source and a drain of the LDMOS transistor. The device has high withstand voltage in a direction perpendicular to the substrate.

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