专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US5799363A Upright vacuum cleaner 失效
标题翻译：直立吸尘器
公开(公告)号：US5799363A
公开(公告)日：1998-09-01
申请号：US781113
申请日：1997-01-09
申请人： Takayuki Inoue , Masami Fukumoto , Izumi Yamaura
发明人： Takayuki Inoue , Masami Fukumoto , Izumi Yamaura
IPC分类号： A47L5/30 , A47L7/06 , A47L9/08 , A47L7/04
CPC分类号： A47L5/30 , A47L7/06 , A47L9/08
摘要： An upright vacuum cleaner has a float unit (29A) for lifting the upright vacuum cleaner during cleaning by spouting discharge air to a floor to be cleaned. The float unit (29A) has a floor-opposing face having a discharge-air outlet port (31) for spouting the discharge air of a motor fan (21).
摘要翻译：直立式真空吸尘器具有浮动单元（29A），用于通过将排放空气喷射到待清洁的地板上来清洁直立式真空吸尘器。浮子单元（29A）具有具有用于喷出电机风扇（21）的排出空气的排出空气出口（31）的地板相对面。

92. 发明授权

US5787910A Washing apparatus 失效
标题翻译：洗衣机
公开(公告)号：US5787910A
公开(公告)日：1998-08-04
申请号：US652923
申请日：1996-05-24
申请人： Masao Oda , Michio Fujiwara , Tomoyuki Kanda , Hideho Taguchi , Yasunori Kurahashi , Takao Morisaki , Takasuke Umemoto , Takayuki Inoue , Fusako Tanaka
发明人： Masao Oda , Michio Fujiwara , Tomoyuki Kanda , Hideho Taguchi , Yasunori Kurahashi , Takao Morisaki , Takasuke Umemoto , Takayuki Inoue , Fusako Tanaka
IPC分类号： A47L15/00 , A47L17/00 , B05B9/00 , B08B3/02
CPC分类号： A47L17/00 , A47L15/0086
摘要： A washing apparatus is compact as well as easy to handle, with which a user can wash down dirt effectively in a short time. Washing liquid supplied from the washing liquid supplying means is made in the form of high-speed jet liquid by a high-speed jet stream spouting means. The high-speed jet liquid is spouted from the aperture of the first cover to wash down dirt by the impact given by the high-speed jet liquid. A washing object is dewatered by gas spouted from the aperture by a blowing means. The high-speed jet stream spouting means is comprised of a rotating object having a plurality of radial shape flow paths extending from a center portion to a circumference of the rotating object, and a liquid supplying portion for supplying washing liquid to a central portion of the radial shape flow paths. A rotating means rotates the rotating object so that washing liquid supplied in the radial shape flow paths is accelerated in the direction of a circumference as well as a radius of the rotating object by rotation. The accelerated washing liquid is spouted from an aperture in the form of high-speed jet liquid.
摘要翻译：洗涤装置紧凑，易于操作，用户可以在短时间内有效地清洗污垢。从洗涤液供给装置供给的洗涤液通过高速喷射流喷射装置被制成高速喷射液体的形式。高速喷射液体从第一盖的孔口喷出，以通过高速喷射液体的冲击来清除污垢。洗涤物体通过吹出装置从孔中喷出的气体脱水。高速喷射流喷射装置包括具有从旋转物体的中心部分延伸到圆周的多个径向形状的流动路径的旋转物体，以及用于将清洗液供应到旋转物体的中心部分的液体供应部分径向形状流动路径。旋转装置旋转旋转物体，使得在径向形状流动路径中供应的洗涤液体在圆周方向以及旋转物体的旋转半径方向上被加速。加速的洗涤液体以高速喷射液体形式的孔径喷出。

93. 发明授权

US5553347A Upright vacuum cleaner 失效
标题翻译：直立吸尘器
公开(公告)号：US5553347A
公开(公告)日：1996-09-10
申请号：US423198
申请日：1995-04-18
申请人： Takayuki Inoue , Masami Fukumoto , Izumi Yamaura
发明人： Takayuki Inoue , Masami Fukumoto , Izumi Yamaura
IPC分类号： A47L5/28 , A47L7/06 , A47L9/00
CPC分类号： A47L9/0081 , A47L5/28 , A47L7/06
摘要： An upright vacuum cleaner has a floating function for lifting the upright vacuum cleaner in a cleaning operation by spouting discharge air flow to a floor to be cleaned, and at least a suction-air inlet port for sucking air with dusts is arranged at an outer portion of a bottom face of a floor nozzle unit of the upright vacuum cleaner.
摘要翻译：立式吸尘器具有浮起功能，用于通过将排出的空气流喷射到待清洁的地板上，在清洁操作中提升直立式真空吸尘器，并且至少一个用于吸入具有灰尘的空气的吸入空气入口端口布置在外部的立式吸尘器的地板喷嘴单元的底面。

94. 发明授权

US5223576A Thermoplastic resin composition 失效
公开(公告)号：US5223576A
公开(公告)日：1993-06-29
申请号：US788110
申请日：1991-11-05
申请人： Hiroshi Nakano , Takayuki Inoue , Shiroh Gotoh , Michiharu Kihira
发明人： Hiroshi Nakano , Takayuki Inoue , Shiroh Gotoh , Michiharu Kihira
IPC分类号： C08L9/00 , C08L21/00 , C08L23/02 , C08L23/06 , C08L23/14 , C08L23/16 , C08L71/00 , C08L71/12
CPC分类号： C08L23/145 , C08L71/123 , C08L2205/03 , C08L23/06 , C08L71/12 , Y10S525/905
摘要： A thermoplastic resin composition comprises the following components (A) and (B):component (A): 10 to 90% by weight polyphenylene ether resin,component (B): 90 to 10% by weight unsaturated copolymer resin obtained by copolymerizing at least one .alpha.-olefin having 2 to 12 carbon atoms and a diene compound having 4 to 15 carbon atoms, and containing 0.01 to 50 mol % of diene compound. This resin composition has excellent resistance to organic solvents and superior mechanical properties.

95. 发明授权

US4879360A Polyphenylene ether resin composition 失效
标题翻译：聚苯醚树脂组合物
公开(公告)号：US4879360A
公开(公告)日：1989-11-07
申请号：US167238
申请日：1988-03-11
申请人： Yoshinobu Kobayashi , Tosio Itou , Takayuki Inoue
发明人： Yoshinobu Kobayashi , Tosio Itou , Takayuki Inoue
IPC分类号： C08L67/00 , C08G59/00 , C08G59/18 , C08G59/34 , C08L63/00 , C08L63/08 , C08L67/02 , C08L71/12
CPC分类号： C08L67/02 , C08L71/123 , C08L71/126 , C08L63/00 , C08L67/00 , Y10S525/905
摘要： A polyphenylene ether resin composition comprising (a) a polyphenylene ether resin, (b) a polyester resin, and (c) from 0.1 to 10 parts by weight, per 100 parts by weight of the total of the components (a) and (b), an epoxidized liquid polybutadiene having an oxirane oxygen content of at least 0.07% by weight. The composition is excellent in solvent resistance and mechanical strength.

96. 发明授权

US4558094A Process for producing a crosslinked product of a silane grafted propylene resin 失效
标题翻译：制备硅烷接枝丙烯树脂的交联产物的方法
公开(公告)号：US4558094A
公开(公告)日：1985-12-10
申请号：US561727
申请日：1983-12-15
申请人： Jichio Deguchi , Takayuki Inoue
发明人： Jichio Deguchi , Takayuki Inoue
IPC分类号： C08L51/00 , C08L7/00 , C08L21/00 , C08L23/00 , C08L33/00 , C08L33/02 , C08L51/02 , C08L51/06 , C08L101/00
CPC分类号： C08L51/06
摘要： Crosslinked product of a propylene resin having practically sufficient performances such as heat resistance, impact strength, rigidity, etc. is produced by exposing a composition to water or steam in the presence of a silanol condensation catalyst to effect crosslinking, the composition being comprised of (A) 60 to 90 wt % of a modified propylene resins with an ethylenically unsaturated silane compound grafted thereon, (B) 20 to 5 wt % of an ethylene resin and (C) 20 to 5 wt % of an ethylene-.alpha.-olefin copolymer rubber.
摘要翻译：通过在硅烷醇缩合催化剂的存在下将组合物暴露于水或蒸汽进行交联，从而产生具有实际上具有足够性能如耐热性，冲击强度，刚性等的丙烯树脂的交联产物，该组合物由 A）60〜90重量％的接枝有烯属不饱和硅烷化合物的改性丙烯树脂，（B）20-5重量％的乙烯树脂和（C）20-5重量％的乙烯-α-烯烃共聚物橡胶。

97. 发明授权

US08951894B2 Plasma treatment apparatus, method for forming film, and method for manufacturing thin film transistor 有权
标题翻译：等离子体处理装置，薄膜形成方法以及制造薄膜晶体管的方法
公开(公告)号：US08951894B2
公开(公告)日：2015-02-10
申请号：US13618472
申请日：2012-09-14
申请人： Shunpei Yamazaki , Takayuki Inoue , Erumu Kikuchi , Hiroto Inoue
发明人： Shunpei Yamazaki , Takayuki Inoue , Erumu Kikuchi , Hiroto Inoue
IPC分类号： H01L21/314 , H01J37/32 , H01L29/66
CPC分类号： H01J37/32449 , H01J37/3244 , H01J37/32541 , H01L29/66765
摘要： A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.
摘要翻译：采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接，不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

98. 发明授权

US08901552B2 Top gate thin film transistor with multiple oxide semiconductor layers 有权
标题翻译：具有多个氧化物半导体层的顶栅薄膜晶体管
公开(公告)号：US08901552B2
公开(公告)日：2014-12-02
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L21/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

99. 发明授权

US08530030B2 Honeycomb structure 有权
标题翻译：蜂窝结构
公开(公告)号：US08530030B2
公开(公告)日：2013-09-10
申请号：US13432322
申请日：2012-03-28
申请人： Yasushi Noguchi , Atsushi Kaneda , Takayuki Inoue
发明人： Yasushi Noguchi , Atsushi Kaneda , Takayuki Inoue
IPC分类号： F01N3/10 , F01N3/24 , B01D53/94
CPC分类号： F01N3/28 , B01D46/2425 , B01D46/2451 , B01D46/247 , B01D46/2474 , B01D53/88 , B01D2046/2433 , B01D2046/2437 , B01D2258/01 , C04B35/565 , C04B35/6316 , C04B38/0009 , C04B41/009 , C04B41/5096 , C04B41/85 , C04B2111/0081 , C04B2235/3213 , C04B2235/428 , C04B2235/5436 , C04B2235/663 , C04B2235/96 , F01N3/0222 , Y02T10/20 , Y10T428/24149 , Y10T428/24165 , C04B38/0067 , C04B41/5059 , C04B38/0006 , C04B35/573
摘要： There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.
摘要翻译：公开了一种蜂窝结构体，其包括蜂窝结构部分，该蜂窝结构部分包括：多孔分隔壁，用于分隔并形成从一个端面延伸到另一端面的多个单元，并且通过流体通道; 以及位于最外周的外周壁。分隔壁和外周壁包含作为骨料的碳化硅颗粒和作为粘结剂的硅作为结合碳化硅颗粒的分隔壁，隔壁的厚度为50至200μm，电池密度为50至150个/ cm 2，作为骨料的碳化硅的平均粒径为3〜40μm，400℃下的体积电阻率为1〜40Ω·cm。

100. 发明授权

US08441047B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08441047B2
公开(公告)日：2013-05-14
申请号：US12754393
申请日：2010-04-05
申请人： Hiromichi Godo , Takayuki Inoue
发明人： Hiromichi Godo , Takayuki Inoue
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/7869 , H01L27/1225
摘要： An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.
摘要翻译：目的是提供使用氧化物半导体的具有优选结构的n沟道晶体管和p沟道晶体管。第一源极或漏极，其电连接到第一氧化物半导体层，并且使用包括包含第一材料的第一导电层和包含第二材料的第二导电层的堆叠层结构形成，以及第二源极或漏极电连接到第二氧化物半导体层并且使用包括包含第一材料的第三导电层和包含第二材料的第四导电层的层叠结构形成的电极。第一氧化物半导体层与第一源极或漏极的第一导电层接触，并且第二氧化物半导体层与第二源极或漏极的第三导电层和第四导电层接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式