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91. 发明申请

US20050194646A1 Semiconductor device with shallow trench isolation and its manufacture method 有权
标题翻译：具有浅沟槽隔离的半导体器件及其制造方法
公开(公告)号：US20050194646A1
公开(公告)日：2005-09-08
申请号：US10882260
申请日：2004-07-02
申请人： Kengo Inoue , Hiroyuki Ota
发明人： Kengo Inoue , Hiroyuki Ota
IPC分类号： H01L21/76 , H01L21/31 , H01L21/74 , H01L21/762 , H01L27/08 , H01L29/78 , H01L31/113
CPC分类号： H01L21/76232 , H01L21/31053 , H01L21/31111 , H01L21/823878 , H01L29/7833
摘要： A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.
摘要翻译：半导体器件制造方法包括以下步骤：（a）在半导体衬底的表面上形成用于化学机械抛光的阻挡层; （b）在所述阻挡层和半导体衬底中形成元件隔离沟槽; （c）沉积覆盖所述沟槽的内表面的氮化物膜; （d）通过高密度等离子体CVD沉积第一氧化物膜，第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; （e）通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; （f）通过高密度等离子体CVD沉积第二氧化膜，第二氧化膜在洗出之后埋入沟槽; 和（g）通过化学机械抛光去除阻挡层上的氧化物膜。

92. 发明申请

US20050018749A1 Infrared clinical thermometer and temperature state estimation method, information notification method, and measurement operation method thereof 失效
标题翻译：红外线体温计和温度状态估计方法，信息通知方法及其测量操作方法
公开(公告)号：US20050018749A1
公开(公告)日：2005-01-27
申请号：US10873461
申请日：2004-06-23
申请人： Taiga Sato , Hiroyuki Ota , Tetsuya Sato , Yoshihide Onishi
发明人： Taiga Sato , Hiroyuki Ota , Tetsuya Sato , Yoshihide Onishi
IPC分类号： G01K7/00 , A61B5/01 , G01J5/00 , G01J5/02 , G01J5/04 , G01K13/00
CPC分类号： G01J5/04 , G01J5/02 , G01J5/025 , G01J5/026 , G01J5/049 , G01J2005/068
摘要： Temperature states of a clinical thermometer body and an environment are estimated by temperatures measured by a first temperature sensor integrally formed together with an infrared sensor arranged to the distal end of a probe and a second temperature sensor arranged on the bottom side of a probe holder, and processes suitable for the respective temperature states are performed. An estimation error or the reliability of an estimation value is calculated by the temperatures to notify a user of the estimation error or the reliability by an LCD or the like.
摘要翻译：通过与设置在探头的远端的红外线传感器一体形成的第一温度传感器和布置在探针保持器的底侧的第二温度传感器测量的温度估计临床体温计体和环境的温度状态，并且执行适合于各自的温度状态的处理。通过温度来计算估计误差或估计值的可靠性，以通过LCD等通知用户估计误差或可靠性。

93. 发明授权

US06832989B2 Infrared clinical thermometer 有权
标题翻译：红外线体温计
公开(公告)号：US06832989B2
公开(公告)日：2004-12-21
申请号：US10172990
申请日：2002-06-18
申请人： Tetsuya Sato , Hiroyuki Ota , Yoshihide Onishi , Taiga Sato
发明人： Tetsuya Sato , Hiroyuki Ota , Yoshihide Onishi , Taiga Sato
IPC分类号： A61B500
CPC分类号： G01J5/04 , G01J5/02 , G01J5/025 , G01J5/026 , G01J5/0275 , G01J5/028 , G01J5/049
摘要： This invention is designed such that measurement can be performed only when a probe is sufficiently inserted into an external ear canal. A decision whether the probe is sufficiently inserted into the external ear canal or not is performed on the basis of a detected temperature.
摘要翻译：本发明的设计使得只有当探头充分插入外耳道时才能进行测量。基于检测到的温度进行探针是否充分插入到外耳道中的判定。

94. 发明授权

US06693303B2 Nitride semiconductor device and method for manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US06693303B2
公开(公告)日：2004-02-17
申请号：US10166048
申请日：2002-06-11
申请人： Hiroyuki Ota , Masayuki Sonobe , Norikazu Ito , Tetsuo Fujii
发明人： Hiroyuki Ota , Masayuki Sonobe , Norikazu Ito , Tetsuo Fujii
IPC分类号： H01L2713
CPC分类号： H01L33/02 , H01L33/08 , H01L33/145 , H01L33/32
摘要： A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.
摘要翻译：氮化物半导体器件由III族氮化物半导体组成。该器件包括有源层和由预定材料制成并邻近有源层提供的阻挡层。阻挡层具有比有源层更大的带隙。该装置还包括由预定材料形成的阻挡部分，用于围绕有源层中的穿透位错。阻挡部分具有顶点。该器件还包括其中放置顶点的杂质浓度范围为1E16 / cc至1E17 / cc的半导体层。

95. 发明授权

US06200827B1 Method for manufacturing a semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06200827B1
公开(公告)日：2001-03-13
申请号：US09224356
申请日：1999-01-04
申请人： Yoshinori Kimura , Hiroyuki Ota
发明人： Yoshinori Kimura , Hiroyuki Ota
IPC分类号： H01L2100
CPC分类号： H01L33/0095 , H01L33/007
摘要： A semiconductor light emitting device has at least a substrate, an n-type GaN type semiconductor layer, an active layer, and a p-type GaN type semiconductor layer which are laminated on each other. In a first annealing process, the semiconductor light emitting device is annealing-processed thereby activating the p-type GaN type semiconductor layer. A metal mask is formed to cover an electric current introducing area of a surface of the p-type GaN type semiconductor layer. In a second annealing process the semiconductor light emitting device is annealing-processed thereby inactivating the p-type GaN type semiconductor layer.
摘要翻译：半导体发光器件至少具有层叠在一起的基板，n型GaN型半导体层，有源层和p型GaN型半导体层。在第一退火工艺中，对半导体发光器件进行退火处理，从而激活p型GaN型半导体层。形成金属掩模以覆盖p型GaN型半导体层的表面的电流引入区域。在第二退火工艺中，对半导体发光器件进行退火处理，从而使p型GaN型半导体层失活。

96. 发明授权

US6104174A High voltage power supply circuit 失效
标题翻译：高压电源电路
公开(公告)号：US6104174A
公开(公告)日：2000-08-15
申请号：US299556
申请日：1999-04-21
申请人： Hiroyuki Ota , Masami Furuta , Syuji Kamada
发明人： Hiroyuki Ota , Masami Furuta , Syuji Kamada
IPC分类号： H02M3/28 , H02M7/06 , H02M7/12 , H04N3/18 , H04N3/185 , G05F1/10
CPC分类号： H04N3/18 , H04N3/185
摘要： A speed-up circuit 10 is connected to a detection line 6 for feeding back the high voltage detection value of a high voltage detection circuit 5 to a high voltage stabilizing circuit 1. When a power supply switch is turned on, since a PNP transistor 12 of the speed-up circuit 10 is turned on, a resistor 11 is connected to the detection line 6, so that the high voltage detection value is reduced forcedly. Accordingly, the high voltage stabilizing circuit 1 increases the peak value of a flyback pulse generated by a resonance-type power supply circuit 2 to output higher high voltage thereby to shorten the rising time of the high voltage output supplied to the anode of a CRT. After the lapse of the predetermined time from the turning-on of the power supply switch, since the terminal voltage of a capacitor 13 having been charged through a resistor 14 exceeds almost the voltage at a point A, the PNP transistor 12 is turned off, so that the resistor 11 is separeted from the detection line. Accordingly, the responsibility of the flyback pulse is prevented from being degraded at the time of the abrupt change of the load of the CRT.
摘要翻译：加速电路10连接到检测线6，用于将高电压检测电路5的高电压检测值反馈给高电压稳定电路1.当电源开关导通时，由于PNP晶体管12 加速电路10接通，电阻器11与检测线6连接，使得高电压检测值被强制地减小。因此，高电压稳定电路1增加由谐振型电源电路2产生的回扫脉冲的峰值，以输出较高的高电压，从而缩短供给CRT的阳极的高电压输出的上升时间。在从供电开关接通经过预定时间之后，由于已经通过电阻器14充电的电容器13的端子电压几乎超过了点A处的电压，所以PNP晶体管12截止，使得电阻器11从检测线分离。因此，在CRT的负载的突然变化时防止回扫脉冲的作用降低。

97. 发明授权

US5834326A Process for producing a luminous element of group III nitride semi-conductor 失效
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US5834326A
公开(公告)日：1998-11-10
申请号：US763779
申请日：1996-12-11
申请人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
发明人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/12 , H01L33/32 , H01L33/36 , H01S5/00 , H01S5/323 , H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325 , Y10S148/065 , Y10S148/113
摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.
摘要翻译：一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

98. 发明授权

US4959741A Magnetic head with a controlled gap width 失效
标题翻译：具有可控间隙宽度的磁头
公开(公告)号：US4959741A
公开(公告)日：1990-09-25
申请号：US155947
申请日：1988-02-16
申请人： Hiroyuki Ota , Kazuhiko Sato
发明人： Hiroyuki Ota , Kazuhiko Sato
IPC分类号： G11B5/187 , G11B5/255
CPC分类号： G11B5/255 , Y10T29/49041 , Y10T29/49048 , Y10T29/49057
摘要： A magnetic recording playback head and a method for producing the same having an improved wear resistance and resistance to chipping as well as an improved production rate. The head is formed from a pair of magnetic cores joined through a gap-forming film. The lateral sides of the gap are flat, except for the surface repair to contact the tape, which have a width equal to the track width. The flat sides are coated with a nonmagnetic thin hard film of a material such as alumina or titanium nitride.

99. 发明授权

US4821406A Process for producing a magnetic head 失效
标题翻译：磁头制造方法
公开(公告)号：US4821406A
公开(公告)日：1989-04-18
申请号：US160969
申请日：1988-02-26
申请人： Hiroyuki Ota
发明人： Hiroyuki Ota
IPC分类号： G11B5/127 , G11B5/187 , G11B5/23
CPC分类号： G11B5/1878 , G11B5/232 , Y10T29/49043 , Y10T29/49048 , Y10T29/49057 , Y10T29/49067
摘要： A process for producing a magnetic head having improved registry between opposite track width controlling grooves. A magnetic gap forming nonmagnetic thin film is deposited on a first magnetic oxide substrate made of a magnetic oxide material, and a thin magnetic metal film is formed over the nonmagnetic thin film. Recording/reproducing track width controlling grooves are formed in the surface of the magnetic oxide substrate, thereby providing a first core half. On a second magnetic oxide substrate is formed a magnetic thin film for provide a second core half. The two core halves are joined to produce a head block by joining the two magnetic thin metal film coatings. The head block is then sliced to form discrete magnetic heads.

100. 发明授权

US4815197A Process for producing magnetic head 失效
标题翻译：磁头制造工艺
公开(公告)号：US4815197A
公开(公告)日：1989-03-28
申请号：US181939
申请日：1988-04-15
申请人： Hiroyuki Ota , Kazuhiko Sato
发明人： Hiroyuki Ota , Kazuhiko Sato
IPC分类号： G11B5/127 , G11B5/187 , G11B5/23 , G11B5/42
CPC分类号： G11B5/1874 , G11B5/1878 , G11B5/23 , Y10T29/49043 , Y10T29/49048 , Y10T29/49057 , Y10T29/49067
摘要： A process for producing a magnetic head having a precisely defined recording width but which can be produced using simple process steps. Track width controlling grooves are formed in at least one of two core block halves made of a magnetic material. A thin film of a nommagnetic material, which serves as a gap spacer, is deposited on the bottoms of the track width controlling grooves and portions therebetween. A thin film layer of a metallic magnetic material is formed on the nonmagnetic thin film, and a thin film layer of a metallic magnetic material is formed on the surface of the other core to be brought into abutment against portions between the track width controlling grooves. The two core halves are then joined to form a core block with the thin film of metallic magnetic material on one core block half facing the thin film of metallic magnetic material on the other core block half. The thin films of metallic magnetic material are then etched away from all areas except where they contact each other as a result of the abutment of the two core block halves.
摘要翻译：一种用于制造具有精确限定的记录宽度但可以使用简单的工艺步骤制造的磁头的方法。轨道宽度控制槽形成在由磁性材料制成的两个芯块半部中的至少一个中。用作间隙隔离物的非磁性材料的薄膜沉积在轨道宽度控制槽的底部和它们之间的部分。在非磁性薄膜上形成金属磁性材料的薄膜层，在另一个芯体的表面上形成金属磁性体的薄膜层，以与轨道宽度控制槽之间的部分抵接。然后将两个核心半部连接以形成具有金属磁性材料薄膜的芯块，在一个芯块上面对另一个芯块半部分上的金属磁性材料的薄膜。然后金属磁性材料的薄膜从所有区域被蚀刻掉，除了它们彼此接触之外，由于两个芯块半部的邻接。

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