专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20180090621A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180090621A1
公开(公告)日：2018-03-29
申请号：US15822648
申请日：2017-11-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA , Takashi HAMOCHI , Yasutaka NAKAZAWA
IPC分类号： H01L29/786 , H01L29/10 , G02F1/1368 , H01L27/12
CPC分类号： H01L29/78606 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/13394 , G02F1/1368 , H01L27/1225 , H01L27/1233 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/1033 , H01L29/45 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.

92. 发明申请

US20180053856A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180053856A1
公开(公告)日：2018-02-22
申请号：US15785562
申请日：2017-10-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takahiro SATO , Yasutaka NAKAZAWA , Takayuki CHO , Shunsuke KOSHIOKA , Hajime TOKUNAGA , Masami JINTYOU
IPC分类号： H01L29/786 , H01L21/02 , H01L27/32 , H01L29/10 , H01L21/465 , G02F1/1368 , H01L27/12 , H01L29/66 , H01L29/06 , H01L29/24 , G02F1/1362 , H01L29/423 , H01L29/04 , H01L21/306
CPC分类号： H01L29/78696 , G02F1/136277 , G02F1/1368 , H01L21/02365 , H01L21/02403 , H01L21/02422 , H01L21/02551 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/30604 , H01L21/465 , H01L27/1225 , H01L27/1259 , H01L27/3248 , H01L29/045 , H01L29/0657 , H01L29/1033 , H01L29/24 , H01L29/42356 , H01L29/66742 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78693
摘要： A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

93. 发明申请

US20170271421A1 DISPLAY DEVICE 有权
公开(公告)号：US20170271421A1
公开(公告)日：2017-09-21
申请号：US15456887
申请日：2017-03-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuhiro JINBO , Kohei YOKOYAMA , Yuki TAMATSUKURI , Naoto GOTO , Masami JINTYOU , Masayoshi DOBASHI , Masataka NAKADA , Akihiro CHIDA , Naoyuki SENDA
IPC分类号： H01L27/32
CPC分类号： H01L27/3258 , H01L51/5253 , H01L2251/301 , H01L2251/5338
摘要： To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

94. 发明申请

US20170263783A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170263783A1
公开(公告)日：2017-09-14
申请号：US15451804
申请日：2017-03-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Junichi KOEZUKA , Kenichi OKAZAKI , Masami JINTYOU , Yukinori SHIMA
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L21/02 , H01L29/24 , H01L29/04
CPC分类号： H01L29/78696 , G02F1/13338 , G02F1/1368 , G02F2001/133357 , G02F2201/123 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/3262 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/78618 , H01L29/78621 , H01L29/7869 , H01L29/78693
摘要： To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

95. 发明申请

US20170256648A1 Semiconductor Device, Display Device Including The Semiconductor Device, Display Module Including The Display Device, And Electronic Appliance Including The Semiconductor Device, The Display Device, Or The Display Module 审中-公开
公开(公告)号：US20170256648A1
公开(公告)日：2017-09-07
申请号：US15597297
申请日：2017-05-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Junichi KOEZUKA , Masami JINTYOU , Daisuke KUROSAKI
IPC分类号： H01L29/786 , H01L29/66 , H01L29/26
CPC分类号： H01L29/78606 , H01L29/26 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

96. 发明申请

US20170162718A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170162718A1
公开(公告)日：2017-06-08
申请号：US15439997
申请日：2017-02-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Yasutaka NAKAZAWA , Masami JINTYOU , Junichi KOEZUKA , Kenichi OKAZAKI , Takuya HIROHASHI , Shunsuke ADACHI
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/32051 , H01L21/3213 , H01L21/473 , H01L21/4757 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

97. 发明申请

US20170162716A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170162716A1
公开(公告)日：2017-06-08
申请号：US15434153
申请日：2017-02-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA , Takashi HAMOCHI , Yasutaka NAKAZAWA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L27/12 , H01L29/24
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/3262 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78621 , H01L29/78627 , H01L29/7869 , H01L2029/7863
摘要： A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

98. 发明申请

US20170104090A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170104090A1
公开(公告)日：2017-04-13
申请号：US15287085
申请日：2016-10-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA , Yasuharu HOSAKA , Yasutaka NAKAZAWA , Takashi HAMOCHI , Takahiro SATO , Shunpei YAMAZAKI
IPC分类号： H01L29/66 , H01L27/146 , H01L27/12 , H01L29/786 , H01L21/02
CPC分类号： H01L29/66969 , G02F1/133345 , G02F1/13338 , G02F1/133528 , G02F1/1337 , G02F1/1339 , G02F1/13394 , G02F1/136286 , G02F1/1368 , G02F2001/133541 , G02F2201/121 , G06F3/0412 , G06F3/044 , G06F2203/04103 , G06F2203/04108 , G09G3/20 , G09G3/2003 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2300/0452 , G09G2330/021 , G09G2330/028 , H01L21/02175 , H01L21/02274 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/14616 , H01L29/4908 , H01L29/78633 , H01L29/78648 , H01L29/7869
摘要： Variation in electrical characteristics of a semiconductor device including an oxide semiconductor is inhibited and the reliability thereof is improved. The oxide semiconductor is formed over a substrate. An insulator is formed over the oxide semiconductor. A metal oxide is formed over the insulator. A conductor is formed over the metal oxide. The conductor, the metal oxide, and the insulator over the oxide semiconductor are removed to expose a portion of the oxide semiconductor. Plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor. A nitride insulator is formed over the exposed portion of the oxide semiconductor and the conductor.

99. 发明申请

US20170054029A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20170054029A1
公开(公告)日：2017-02-23
申请号：US15231061
申请日：2016-08-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi KOEZUKA , Masami JINTYOU , Daisuke KUROSAKI , Yukinori SHIMA , Toshimitsu OBONAI
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/0254 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/02603 , H01L21/0262 , H01L21/02653 , H01L29/66969
摘要： A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150° C. and lower than 300° C.
摘要翻译：一种半导体器件的制造方法具有：第一工序，包括形成氧化物半导体膜的工序;第二工序，包括在所述氧化物半导体膜上形成栅极绝缘膜的步骤;以及在所述栅极绝缘上形成栅电极的工序; 薄膜，第三步骤，包括在所述氧化物半导体膜和所述栅电极上形成氮化物绝缘膜的步骤，第四步骤，包括在所述氮化物绝缘膜上形成氧化物绝缘膜的步骤，第五步骤，包括形成步骤氮化物绝缘膜和氧化物绝缘膜中的开口，以及第六步骤，包括在氧化物绝缘膜上形成源极和漏极以便覆盖开口的步骤。在第三步骤中，通过至少两个步骤形成氮化物绝缘膜：等离子体处理和沉积处理。两个步骤各自在高于或等于150℃并低于300℃的温度下进行。

100. 发明申请

US20170033238A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20170033238A1
公开(公告)日：2017-02-02
申请号：US15226051
申请日：2016-08-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA , Daisuke KUROSAKI , Masataka NAKADA , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78693 , H01L27/1225 , H01L27/1251 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.
摘要翻译：该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。含有杂质元素的氧化物半导体膜的区域用作低电阻区域。此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜以金属元素的原子比计。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式