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91. 发明授权

US06392214B1 Optical unit photoelectric switch fiber-type photoelectric switch and color discrimination sensor 失效
标题翻译：光电单元光电开关光纤开关和色差传感器
公开(公告)号：US06392214B1
公开(公告)日：2002-05-21
申请号：US09310333
申请日：1999-05-12
申请人： Yasuhiro Okamoto
发明人： Yasuhiro Okamoto
IPC分类号： G01J132
CPC分类号： H03K17/941 , G01D5/268 , G01V8/16
摘要： A photoelectric switch which has a light source made up of elements 1a, 1b, and 1c for emitting light, a projection lens 3, a first optical fiber 6a for guiding the light emitted from the light source and penetrating the projection lens into a detection position 7, a detection light reception element 2a, a second optical fiber 6b for guiding the light reflected from the detection position 7 or the light penetrating the detection position 7 into the detection light reception element 2a, and a monitor light reception element 2b disposed at a position for receiving light between the projection lens 3 and the incident end part of the first optical fiber 6a. According to the present invention, it is possible to provide a photoelectric switch capable of precisely monitoring the light transmission quantity if the transmissivity or reflectivity of an optical system changes.
摘要翻译：具有由用于发光的元件1a，1b和1c组成的光源的光电开关，投影透镜3，用于引导从光源发射的光并将投影透镜穿透到检测位置的第一光纤6a 如图7所示，检测光接收元件2a，用于将从检测位置7反射的光或穿过检测位置7的光引导到检测光接收元件2a中的第二光纤6b，以及设置在检测光接收元件2a上的监视光接收元件2b。用于在投影透镜3和第一光纤6a的入射端部之间接收光的位置。根据本发明，如果光学系统的透射率或反射率改变，则可以提供能够精确地监视光透射量的光电开关。

92. 发明授权

US06124936A Color discrimination system 失效
标题翻译：颜色辨别系统
公开(公告)号：US06124936A
公开(公告)日：2000-09-26
申请号：US337754
申请日：1999-06-22
申请人： Yasuhiro Okamoto
发明人： Yasuhiro Okamoto
IPC分类号： G01J3/50 , G01J3/46 , G01J3/51
CPC分类号： G01J3/46 , G01J2003/466 , G01J3/501
摘要： A color discrimination system which emits light from a light source to a measurement target, receives the light reflected from the measurement target or the light penetrating the measurement target by a light reception section for receiving the light for each of a plurality of light wavelengths, finding the sum total of the light reception quantities of the wavelengths and the ratios of the light reception quantities of the wavelengths to the sum total by an operation section, compares the values with reference values provided for a detection object, and discriminates color of the measurement target from color of the detection object based on the comparison result. The quantity of the light received by the light reception section for the detection object is sampled and the reference values are set to appropriate values, for example, in the range of the maximum value and the minimum value based on the sum total of the light reception quantities of the wavelengths and the ratios of the light reception quantities of the wavelengths to the sum total found by the operation section, whereby the optimum reference values responsive to the detection state and the detection environment can be set easily.
摘要翻译：从光源发射光到测量对象的颜色识别系统接收由测量对象反射的光或穿过测量对象的光，用于接收多个光波长中的每一个的光的光接收部，发现将波长的光接收量和波长的光接收量与总计的总和的总和与操作部分进行比较，将其与为检测对象提供的参考值进行比较，并且区分测量对象的颜色从检测对象的颜色基于比较结果。由检测对象的光接收部接收的光的量被采样，并且将参考值设定为适当的值，例如在最大值和最小值的范围内，基于光接收的总和波长的数量和波长的光接收量与操作部分找到的总和的比率，由此可以容易地设置响应于检测状态和检测环境的最佳参考值。

93. 发明授权

US09861264B2 Rigid endoscope 有权
公开(公告)号：US09861264B2
公开(公告)日：2018-01-09
申请号：US13553911
申请日：2012-07-20
申请人： Yasuhiro Okamoto , Kazuo Banju , Hiroki Moriyama
发明人： Yasuhiro Okamoto , Kazuo Banju , Hiroki Moriyama
IPC分类号： A61B1/00 , A61B1/06 , A61B1/005 , A61B1/04 , A61B1/12 , A61B1/313 , A61B17/34 , A61B17/00 , A61B90/00
CPC分类号： A61B1/00154 , A61B1/00078 , A61B1/00103 , A61B1/00105 , A61B1/00119 , A61B1/00128 , A61B1/0014 , A61B1/00163 , A61B1/005 , A61B1/04 , A61B1/0676 , A61B1/12 , A61B1/126 , A61B1/313 , A61B1/3132 , A61B17/3417 , A61B17/3421 , A61B17/3478 , A61B17/3496 , A61B2017/00477 , A61B2017/00557 , A61B2017/3447 , A61B2017/3466 , A61B2017/3486 , A61B2090/062
摘要： A rigid endoscope includes a first insertion section extending along longitudinal directions, a first needle defining an outer edge of a first opening, and a first functional section provided in a vicinity of the first opening of a first lumen, and configured to perform some part of functions. The rigid endoscope includes a second insertion section extending along the longitudinal directions, and located apart from the first insertion section in directions perpendicular to the longitudinal directions, a second needle defining an outer edge of a second opening, and a second functional section provided in a vicinity of the second opening of a second lumen, and configured to perform some part of the functions different from the functions performed by the first functional section.

94. 发明授权

US08981434B2 Semiconductor device and field effect transistor 有权
标题翻译：半导体器件和场效应晶体管
公开(公告)号：US08981434B2
公开(公告)日：2015-03-17
申请号：US13393002
申请日：2010-06-23
申请人： Hironobu Miyamoto , Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Hironobu Miyamoto , Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/76 , H01L29/812 , H01L29/201 , H01L29/78 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/417 , H01L29/423
CPC分类号： H01L29/8122 , H01L29/0657 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/7809 , H01L29/7812 , H01L29/7813 , H01L29/8128
摘要： Provided is a semiconductor device in which the trade-off between the withstand voltage and the on-resistance is improved and the performance is increased. A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21′, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25′, wherein the first n-type semiconductor layer 21′, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and the third n-type semiconductor layer 25′ are laminated at the upper side of the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 21′ and the source electrode 12 is in ohmic-contact with the third n-type semiconductor layer 25′. A gate electrode 14 is arranged so as to fill an opening portion to be filled that extends from the third n-type semiconductor layer 25′ to the second n-type semiconductor layer 23, and the gate electrode 14 is in contact with the upper surface of the second n-type semiconductor layer 23, the side surfaces of the p-type semiconductor layer 24, and the side surfaces of the third n-type semiconductor layer 25′. The second n-type semiconductor layer 23 has composition that changes from the drain electrode 13 side toward the source electrode 12 side in the direction perpendicular to the plane of the substrate 1 and contains donor impurity.
摘要翻译：提供一种半导体器件，其中耐压和导通电阻之间的折衷被提高并且性能提高。半导体器件包括衬底1，第一n型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'，其中第一n型半导体层型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'依次层叠在基板1的上侧。漏电极13与第一n型半导体层21'欧姆接触，源电极12与第三n型半导体层25'欧姆接触。栅电极14被布置成填充从第三n型半导体层25'延伸到第二n型半导体层23的待填充的开口部分，并且栅电极14与上表面第二n型半导体层23，p型半导体层24的侧表面和第三n型半导体层25'的侧表面。第二n型半导体层23具有从垂直于基板1的平面的方向从漏电极13侧向源电极12侧变化的成分，并且含有施主杂质。

95. 发明授权

US08921894B2 Field effect transistor, method for producing the same, and electronic device 有权
标题翻译：场效应晶体管，其制造方法和电子器件
公开(公告)号：US08921894B2
公开(公告)日：2014-12-30
申请号：US13637555
申请日：2010-12-15
申请人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
发明人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
IPC分类号： H01L29/778 , H01L21/8252 , H01L29/78 , H01L29/20 , H01L29/423 , H01L29/66
CPC分类号： H01L29/78 , H01L21/8252 , H01L29/2003 , H01L29/4232 , H01L29/66477 , H01L29/7785 , H01L29/7787
摘要： The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112, a channel layer 113, a barrier layer 114, and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112, the channel layer 113 having a compressive strain, and the barrier layer 114 having a tensile strain, and the spacer layer 115 having a compressive strain are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115. The gate electrode 15 is arranged on the gate insulating film 14. The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.
摘要翻译：本发明提供了能够实现高阈值电压和低通态电阻两者的场效应晶体管，其制造方法和电子器件。在场效应晶体管中，由III族氮化物半导体形成缓冲层112，沟道层113，势垒层114和间隔层115，其上表面为III族原子平面垂直于（0001）晶轴。栅格弛豫缓冲层112，具有压缩应变的沟道层113和具有拉伸应变的阻挡层114以及具有压缩应变的间隔层115以此顺序层压在基板100上。栅极绝缘膜14布置在间隔层115上。栅电极15布置在栅极绝缘膜14上。源极161和漏极162直接或经由另一个部件电连接到沟道层113。

96. 发明授权

US08674409B2 Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device 有权
标题翻译：异质结场效应晶体管，异质结场效应晶体管的制造方法和电子器件
公开(公告)号：US08674409B2
公开(公告)日：2014-03-18
申请号：US13141449
申请日：2009-12-25
申请人： Takashi Inoue , Hironobu Miyamoto , Kazuki Ota , Tatsuo Nakayama , Yasuhiro Okamoto , Yuji Ando
发明人： Takashi Inoue , Hironobu Miyamoto , Kazuki Ota , Tatsuo Nakayama , Yasuhiro Okamoto , Yuji Ando
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/0843 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/66462
摘要： A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron transit layer 11 formed of a III-nitride semiconductor is formed on a substrate 10, an electron supply layer 12 formed of a III-nitride semiconductor forms a heterojunction with an upper surface of the electron transit layer 11, a gate electrode 14, a source electrode 15A, and a drain electrode 15B are arranged on the electron supply layer 12, n-type conductive layer regions 13A and 13B each extended from an upper part of the electron transit layer 11 to an upper surface of the electron supply layer 12 are provided in at least a part below the source electrode 15A and a part below the drain electrode 15B, and an n-type impurity concentration at a heterojunction interface of an electron transit layer 11 part of each of the n-type conductive layer regions 13A and 13B with the electron supply layer 12 is 1×1020 cm−3 or more.
摘要翻译：提供具有低访问阻抗，低导通电阻等的异质结场效应晶体管，提供了异质结场效应晶体管和电子器件的制造方法。在异质结场效应晶体管中，在衬底10上形成由III族氮化物半导体形成的电子迁移层11，由III族氮化物半导体形成的电子供给层12与电子迁移层的上表面形成异质结如图11所示，在电子供给层12上配置有栅电极14，源电极15A和漏电极15B，从电子渡越层11的上部延伸到上部的n型导电层区域13A，13B 电子供给层12的表面设置在源电极15A的下方以及漏电极15B的下方的至少一部分以及电子迁移层11的异质界面的n型杂质浓度具有电子供给层12的n型导电层区域13A，13B为1×1020cm-3以上。

97. 发明申请

US20130099245A1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE 审中-公开
标题翻译：场效应晶体管，其制造方法和电子器件
公开(公告)号：US20130099245A1
公开(公告)日：2013-04-25
申请号：US13637316
申请日：2010-12-15
申请人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
发明人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
IPC分类号： H01L29/205 , H01L29/66 , H01L29/78
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/4232 , H01L29/66431 , H01L29/7785 , H01L29/7787 , H01L29/78
摘要： The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112, a channel layer 113, a barrier layer 114, and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112, the lattice-relaxed channel layer 113, and the barrier layer 114 having a tensile strain, and the spacer layer 115 are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115. The gate electrode 15 is arranged on the gate insulating film 14. The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.
摘要翻译：本发明提供了能够实现高阈值电压和低通态电阻两者的场效应晶体管，其制造方法和电子器件。在场效应晶体管中，由III族氮化物半导体形成缓冲层112，沟道层113，势垒层114和间隔层115，其上表面为III族原子平面垂直于（0001）晶轴。晶格弛豫缓冲层112，晶格松弛沟道层113和具有拉伸应变的势垒层114和间隔层115依次层压在基板100上。栅极绝缘膜14布置在间隔层115上。栅电极15布置在栅极绝缘膜14上。源极161和漏极162直接或经由另一个部件电连接到沟道层113。

98. 发明授权

US08409079B2 Electric bending operation device and medical treatment system including electric bending operation device 有权
标题翻译：电动弯曲操作装置及医疗系统，包括电动弯曲操作装置
公开(公告)号：US08409079B2
公开(公告)日：2013-04-02
申请号：US12120478
申请日：2008-05-14
申请人： Yasuhiro Okamoto , Kazuo Banju
发明人： Yasuhiro Okamoto , Kazuo Banju
IPC分类号： A61B1/00 , A61B1/04
CPC分类号： A61B1/0052
摘要： An electric bending operation device can be mounted to an insertion portion of a medical instrument for observation including an electric bending portion. The electric bending operation device may include: an insertion portion mounting mechanism; a rotation mechanism; an insertion portion operation section; and a support column.
摘要翻译：电动弯曲操作装置可以安装到包括电动弯曲部分的用于观察的医疗器械的插入部分。电动弯曲操作装置可以包括：插入部安装机构; 旋转机构; 插入部操作部; 和支柱。

99. 发明申请

US20130037868A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130037868A1
公开(公告)日：2013-02-14
申请号：US13548078
申请日：2012-07-12
申请人： Yasuhiro Okamoto , Tatsuo Nakayama , Takashi Inoue , Hironobu Miyamoto
发明人： Yasuhiro Okamoto , Tatsuo Nakayama , Takashi Inoue , Hironobu Miyamoto
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/7787 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/205 , H01L29/41775 , H01L29/4236 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed over the first nitride semiconductor layer; and a gate electrode facing the second nitride semiconductor layer via a gate insulating film. Because the second nitride semiconductor layer is formed by stacking plural semiconductor layers with their Al composition ratios different from each other, the Al composition ratio of the second nitride semiconductor layer changes stepwise. The semiconductor layers forming the second nitride semiconductor layer are polarized in the same direction so that, among the semiconductor layers, a semiconductor layer nearer to the gate electrode has higher (or lower) intensity of polarization. In other words, the intensities of polarization of the semiconductor layers change with an inclination based on their distances from the gate electrode so that, at each interface between two semiconductor layers, the amount of negative charge becomes larger than that of positive charge.
摘要翻译：半导体器件包括：第一氮化物半导体层; 形成在第一氮化物半导体层上的第二氮化物半导体层; 以及经由栅极绝缘膜与第二氮化物半导体层相对的栅电极。由于第二氮化物半导体层通过堆叠其Al组成比彼此不同的多个半导体层而形成，所以第二氮化物半导体层的Al组成比逐步变化。形成第二氮化物半导体层的半导体层在相同的方向上极化，使得在半导体层中，更靠近栅电极的半导体层具有较高（或更低）的极化强度。换句话说，半导体层的极化强度随着与栅电极的距离的倾斜而变化，使得在两个半导体层之间的每个界面处，负电荷的量变得大于正电荷的量。

100. 发明申请

US20120230665A1 DRIVE DEVICE 审中-公开
标题翻译：驱动装置
公开(公告)号：US20120230665A1
公开(公告)日：2012-09-13
申请号：US13508463
申请日：2010-11-19
申请人： Yasuhiro Okamoto , Hirotoshi Konishi
发明人： Yasuhiro Okamoto , Hirotoshi Konishi
IPC分类号： F03G7/06 , G03B13/34
CPC分类号： G02B7/08 , F03G7/065
摘要： A drive mechanism and a drive device which have an SMA actuator applied thereto, wherein the drive mechanism is configured in such a manner that the size of a constituent component contained within a driven part can be increased to enable the driven part to be moved stably and wherein the drive device is configured in such a manner that the diameter of a lens mounted to a lens unit can be increased to enable the lens unit to be smoothly displaced in the optical axis direction. The drive mechanism and the drive device are configured in such a manner that a drive support point for a lever member is provided at a corner of an affixed section, a guide body is provided to a second corner, which faces said corner, so as to protrude from the body section of the driven part, the guide body is supported slidably, and the drive mechanism and the drive device are provided with a drive guide section provided with a pressing spring for pressing the guide body.
摘要翻译：具有施加在其上的SMA致动器的驱动机构和驱动装置，其中驱动机构被构造成可以增加包含在从动部件中的构成部件的尺寸，以使被驱动部件能够稳定地移动，其特征在于，所述驱动装置的配置使得安装在透镜单元上的透镜的直径可以增加，以使透镜单元能够沿光轴方向平滑地移位。驱动机构和驱动装置构成为，在固定部的角部设置用于杆部件的驱动支撑点，将引导体设置在面向所述角部的第二角部，以便从被驱动部的主体部突出，引导体可滑动地支撑，驱动机构和驱动装置设置有设置有用于按压引导体的按压弹簧的驱动引导部。

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