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91. 发明授权

US08222125B2 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
标题翻译：微波等离子体沉积非晶半导体
公开(公告)号：US08222125B2
公开(公告)日：2012-07-17
申请号：US12855637
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/20 , H01L21/205 , C23C16/00 , C23C16/24 , C23C16/50 , C23C16/511
CPC分类号： H01L31/03767 , C23C16/24 , C23C16/452 , H01J37/32211 , H01J37/3244 , H01J37/32477 , H01J37/3277 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/028 , H01L31/065 , H01L31/076 , H01L31/202 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

92. 发明申请

US20120167984A1 Photovoltaic Device Structure with Primer Layer 审中-公开
标题翻译：具有引物层的光伏器件结构
公开(公告)号：US20120167984A1
公开(公告)日：2012-07-05
申请号：US12983160
申请日：2010-12-31
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01L31/0376 , H01L31/18
CPC分类号： H01L21/02532 , H01L21/0237 , H01L21/02439 , H01L21/0245 , H01L21/02505 , H01L21/0262 , H01L31/03767 , H01L31/03921 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： Device structure that facilitates high rate plasma deposition of thin film photovoltaic materials at microwave frequencies. The device structure includes a primer layer that shields the substrate and underlying layers of the device structure during deposition of layers requiring aggressive, highly reactive deposition conditions. The primer layer prevents or inhibits etching or other modification of the substrate or underlying layers by highly reactive deposition conditions. The primer layer also reduces contamination of subsequent layers of the device structure by preventing or inhibiting release of elements from the substrate or underlying layers into the deposition environment. The presence of the primer layer extends the range of deposition conditions available for forming photovoltaic or semiconducting materials without compromising performance. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors from fluorinated precursors in a microwave plasma process. The product materials exhibit high carrier mobility, high photovoltaic conversion efficiency, low porosity, little or no Staebler-Wronski degradation, and low concentrations of electronic and chemical defects.
摘要翻译：促进薄膜光伏材料在微波频率下高速等离子体沉积的器件结构。器件结构包括底层，其在需要侵蚀性，高反应性沉积条件的层沉积期间屏蔽衬底和器件结构的下层。底漆层通过高反应性沉积条件防止或抑制基材或下层的蚀刻或其它改性。底漆层还通过防止或阻止元件从基底或下层进入沉积环境而减少器件结构的后续层的污染。底漆层的存在延长了可用于形成光伏或半导体材料的沉积条件的范围，而不损害性能。本发明允许在微波等离子体工艺中从氟化前体超快形成含硅非晶半导体。产品材料表现出高载流子迁移率，高光电转换效率，低孔隙率，很少或没有Staebler-Wronski降解，以及低浓度的电子和化学缺陷。

93. 发明申请

US20120167963A1 Photovoltaic Device Structure with Primer Layer 审中-公开
公开(公告)号：US20120167963A1
公开(公告)日：2012-07-05
申请号：US12983149
申请日：2010-12-31
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01L31/0376 , H01L31/0264 , C01B33/02 , H01L31/02
CPC分类号： C01B33/02 , H01L31/03762 , H01L31/03921 , H01L31/076 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： Device structure that facilitates high rate plasma deposition of thin film photovoltaic materials at microwave frequencies. The device structure includes a primer layer that shields the substrate and underlying layers of the device structure during deposition of layers requiring aggressive, highly reactive deposition conditions. The primer layer prevents or inhibits etching or other modification of the substrate or underlying layers by highly reactive deposition conditions. The primer layer also reduces contamination of subsequent layers of the device structure by preventing or inhibiting release of elements from the substrate or underlying layers into the deposition environment. The presence of the primer layer extends the range of deposition conditions available for forming photovoltaic or semiconducting materials without compromising performance. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors from fluorinated precursors in a microwave plasma process. The product materials exhibit high carrier mobility, high photovoltaic conversion efficiency, low porosity, little or no Staebler-Wronski degradation, and low concentrations of electronic and chemical defects.

94. 发明申请

US20120040492A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 失效
标题翻译：微波频率下非晶半导体的等离子体沉积
公开(公告)号：US20120040492A1
公开(公告)日：2012-02-16
申请号：US12855637
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： H01L31/03767 , C23C16/24 , C23C16/452 , H01J37/32211 , H01J37/3244 , H01J37/32477 , H01J37/3277 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/028 , H01L31/065 , H01L31/076 , H01L31/202 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的非预期沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以激活或激发它们到有助于形成薄膜材料的反应状态。导管物理地隔离在微波功率传递的点处将反应或以其他方式组合以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。合适的沉积物质包括含有硅，锗，氟和/或氢的前体。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

95. 发明授权

US08101245B1 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
公开(公告)号：US08101245B1
公开(公告)日：2012-01-24
申请号：US12855645
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： C23C16/00
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

96. 发明授权

US07967994B2 Method and apparatus for chalcogenide device formation 有权
标题翻译：硫族化物装置形成的方法和装置
公开(公告)号：US07967994B2
公开(公告)日：2011-06-28
申请号：US11977520
申请日：2007-10-25
申请人： Tyler Lowrey , Stanford R. Ovshinsky
发明人： Tyler Lowrey , Stanford R. Ovshinsky
IPC分类号： C03C25/68
CPC分类号： H01L21/67207 , H01L21/67155 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1675
摘要： Chalcogenide devices are delineated and sidewalls of the devices are sealed, in an anaerobic and/or anhydrous environment environment. Throughout the delineation and sealing steps, and any intervening steps, the sidewalls are not exposed to oxygen or water. In an illustrative embodiment, a cluster tool includes an etching tool and a sealing/deposition tool configured to etch and seal the chalcogenide devices and to maintain the devices in an anaerobic and/or anhydrous environment throughout the process.
摘要翻译：描绘了硫族化物装置，并且将装置的侧壁密封在厌氧和/或无水环境中。在整个描绘和密封步骤以及任何中间步骤中，侧壁不暴露于氧气或水。在说明性实施例中，集群工具包括蚀刻工具和密封/沉积工具，该工具被配置为蚀刻和密封硫属化物器件并且在整个过程中将器件保持在厌氧和/或无水环境中。

97. 发明申请

US20110086462A1 Process for Manufacturing Solar Cells including Ambient Pressure Plasma Torch Step 审中-公开
标题翻译：包括环境压力等离子体火炬步骤的太阳能电池制造工艺
公开(公告)号：US20110086462A1
公开(公告)日：2011-04-14
申请号：US12575859
申请日：2009-10-08
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01L31/0232
CPC分类号： H01L31/206 , C23C16/513 , C23C16/545 , H01L31/0463 , H01L31/048 , H01L31/056 , H01L31/1884 , Y02E10/52 , Y02P70/521
摘要： A method of forming photovoltaic devices and modules that includes an ambient pressure thin film deposition step. The central combination of the photovoltaic device structure includes a back reflector layer, active photovoltaic material and transparent electrode. The central combination is formed on a substrate having an electrical isolation layer deposited thereon. The device structure may further include an overlying protective layer remote from the substrate and a laminate on the backside of the substrate. The individual devices may be interconnected in series via a patterning process to form a monolithically integrated module. Module fabrication is preferably performed in a continuous fashion. One or more steps of module fabrication are performed with a plasma torch. Use of a plasma torch simplifies the manufacturing process by enabling deposition of the electrical isolation and/or protective layers at ambient pressure, including in air. The resulting process simplification greatly improves the economics of thin film photovoltaic module manufacturing.
摘要翻译：一种形成包括环境压力薄膜沉积步骤的光伏器件和模块的方法。光电器件结构的中心组合包括背反射层，活性光伏材料和透明电极。中心组合形成在其上沉积有电绝缘层的基板上。器件结构还可以包括远离衬底的覆盖保护层和衬底背面上的层压体。各个装置可以通过图案化过程串联连接以形成单片集成模块。模块制造优选以连续的方式进行。使用等离子体焰炬进行模块制造的一个或多个步骤。等离子体焰炬的使用通过在环境压力下包括空气中的电隔离和/或保护层的沉积来简化制造过程。所得到的工艺简化大大提高了薄膜光伏组件制造的经济性。

98. 发明授权

US07547906B2 Multi-functional chalcogenide electronic devices having gain 有权
标题翻译：具有增益的多功能硫属化物电子器件
公开(公告)号：US07547906B2
公开(公告)日：2009-06-16
申请号：US11438709
申请日：2006-05-22
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01L47/00
CPC分类号： H01L45/1206 , H01L45/065 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144
摘要： Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to function in one or more of the following modes reversibly: (1) a gain mode in which gain is induced in the current passing between the load and reference terminals; (2) a conductivity modulation mode in which the conductivity of the chalcogenide material between the load and reference terminals is modulated; (3) a current modulation mode in which the current or current density between the load and reference terminals is modulated; and/or (4) a threshold modulation mode in which the voltage required to switch the chalcogenide material between the load and reference terminals from a resistive state to a conductive state is modulated. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
摘要翻译：包括硫属化物材料的多功能电子开关和电流控制装置。这些设备包括负载端子，参考端子和控制端子。将控制信号施加到控制终端允许装置在以下模式中的一个或多个模式下可逆地运行：（1）增益模式，其中在负载和参考端之间通过的电流中感生增益; （2）调制负载和参考端子之间的硫族化物材料的电导率的电导率调制模式; （3）调制负载和参考端子之间的电流或电流密度的电流调制模式; 和/或（4）阈值调制模式，其中将负载和参考端子之间的硫族化物材料从电阻状态切换到导通状态所需的电压被调制。这些设备可以用作电路和网络中的互连设备或信号提供设备。

99. 发明申请

US20090053428A1 PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY 审中-公开
标题翻译：具有低内在缺陷密度的非晶，纳米晶，微晶或多晶材料的编程高速沉积
公开(公告)号：US20090053428A1
公开(公告)日：2009-02-26
申请号：US12199656
申请日：2008-08-27
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H05H1/24 , H05H1/46 , B05D5/12
CPC分类号： C23C16/24 , C23C16/27 , C23C16/277 , C23C16/452 , C23C16/545 , H01J37/32357 , H05H1/46
摘要： A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process.
摘要翻译：一种用于在静止或连续衬底上非常高速率地沉积薄膜材料的方法和装置。该方法包括原位产生中性富集沉积介质，其有利于以任何速度形成具有低固有缺陷浓度的薄膜材料。在一个实施例中，通过从能量转移气体形成等离子体来产生沉积介质; 将等离子体与前体气体组合以形成一组包括离子，离子 - 和中性的活化物质; 并且选择性地排除促进缺陷形成的物质以形成沉积介质。在另一个实施方案中，通过混合能量转移气体和前体气体，从混合物形成等离子体以形成一组活化物质，并选择性地排除促进缺陷形成的物质来产生沉积介质。该装置具有整个制造过程的控制，其包括诊断元件和反馈控制元件，以允许过程编程在整个沉积过程中实现和维持一种或多种优选物种的最佳分布。

100. 发明授权

US07494739B2 Fuel cell 失效
标题翻译：燃料电池
公开(公告)号：US07494739B2
公开(公告)日：2009-02-24
申请号：US11588463
申请日：2006-10-27
申请人： Michael A. Fetcenko , Stanford R. Ovshinsky , Kwo Young
发明人： Michael A. Fetcenko , Stanford R. Ovshinsky , Kwo Young
IPC分类号： H01M4/90 , H01M8/10 , B01J23/00 , B01J21/00 , B01J20/00
CPC分类号： H01M4/90 , B01J23/755 , B01J23/76 , B01J25/00 , B01J25/02 , B01J35/023 , B01J35/10 , B01J37/0018 , B01J37/06 , C01B3/001 , C01B3/0031 , C01B3/0078 , C22C14/00 , C22C16/00 , C22C27/025 , C22C27/06 , F17C11/005 , H01M4/383 , H01M4/8605 , H01M4/8652 , H01M4/9041 , H01M4/9075 , H01M4/9083 , H01M4/921 , H01M8/04208 , H01M8/08 , H01M8/083 , H01M10/345 , H01M2004/8684 , H01M2008/1095 , Y02E60/321 , Y02E60/327 , Y02P70/56
摘要： A fuel cell. The anode of the fuel cell comprises a hydrogen oxidation catalyst comprising a finely divided metal alloy particulate. The metal alloy particulate has an average particle size of less than about 100 Angstroms.
摘要翻译：燃料电池燃料电池的阳极包括氢氧化催化剂，其包含细碎的金属合金颗粒。金属合金颗粒的平均粒度小于约100埃。

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