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91. 发明授权

US07265775B2 Three-dimensional display apparatus 有权
标题翻译：三维显示装置
公开(公告)号：US07265775B2
公开(公告)日：2007-09-04
申请号：US10386492
申请日：2003-03-13
申请人： Yuzo Hirayama
发明人： Yuzo Hirayama
IPC分类号： H04N7/18
CPC分类号： G02B27/2214 , G09G3/001 , G09G2300/0452 , H04N13/305 , H04N13/31 , H04N13/324
摘要： A three-dimensional image display apparatus comprising a display panel, which displays a parallel projection image corresponding to a three-dimensional image, and an array plate disposed on a front of the display panel and having pinholes arranged two-dimensionally. The display panel includes pixels arranged two-dimensionally in correspondence with the pinholes. Each of the pixels can include a first subpixel, a second subpixel, and a third subpixel. The apparatus also includes a point at which a line passing through one of the pinholes from the first subpixel intersects the three-dimensional image, a point at which a line passing through the one of the pinholes from the second subpixel intersects the three-dimensional image, and a point at which a line passing through the one of the pinholes from the third subpixel intersects the three-dimensional image being separated from one another.
摘要翻译：一种三维图像显示装置，包括显示与三维图像相对应的平行投影图像的显示面板和布置在显示面板的前方并具有二维布置的针孔的阵列板。显示面板包括与针孔相对应地二维布置的像素。每个像素可以包括第一子像素，第二子像素和第三子像素。该装置还包括通过来自第一子像素的针孔之一的线与三维图像相交的点，通过来自第二子像素的针孔之一的线与三维图像相交的点并且通过来自第三子像素的针孔之一的线与相互分离的三维图像相交的点。

92. 发明授权

US6108481A Optical semiconductor device and its manufacturing method 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US6108481A
公开(公告)日：2000-08-22
申请号：US16411
申请日：1998-01-30
申请人： Masaki Tohyama , Masahisa Funemizu , Yuzo Hirayama
发明人： Masaki Tohyama , Masahisa Funemizu , Yuzo Hirayama
IPC分类号： G02B6/12 , G02B6/122 , G02B6/30 , G02B6/42
CPC分类号： G02B6/12004 , G02B6/1228 , G02B6/305 , G02B6/4207
摘要： In order to realize an optical semiconductor device having a window structure promising high-speed operation and highly efficient coupling with optical fibers and to realize its manufacturing method, the device has a window structure in which an optical guide layer is partly removed near the emission facet to decrease the facet reflectivity. Since a cladding layer has a narrow mesa structure also in a window region, the parasitic capacitance can be reduced, and high-speed modulation is ensured. Although light runs through the window region in spread directions from one end of the optical guide layer toward the emission facet, the cladding layer changes its width or thickness in accordance with the spread angle of light. Therefore, light is not reflected or scattered by side surfaces of the cladding layer, and prevents a decrease in optical output due to a scattering loss, or a deterioration in distribution of emitted light. As a result, the device has a high coupling efficiency with optical fibers, and is operative for high optical output.
摘要翻译：为了实现具有有希望的高速操作的窗口结构和与光纤的高效耦合的窗口结构并实现其制造方法的光学半导体器件，该器件具有窗口结构，其中光导层在发射面附近被部分去除以减小刻面反射率。由于覆盖层在窗口区域中也具有窄的台面结构，所以可以减小寄生电容，并且确保高速调制。虽然光沿着从导光层的一端朝向发射面的扩展方向穿过窗口区域，但是包层根据光的扩展角度改变其宽度或厚度。因此，光不会被包层的侧面反射或散射，并且防止由于散射损失导致的光输出的降低或发射光的分布的劣化。结果，该装置与光纤具有高耦合效率，并且可用于高光输出。

93. 发明授权

US6043515A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US6043515A
公开(公告)日：2000-03-28
申请号：US931523
申请日：1997-09-16
申请人： Yuzo Kamiguchi , Yuzo Hirayama , Masashi Sahashi
发明人： Yuzo Kamiguchi , Yuzo Hirayama , Masashi Sahashi
IPC分类号： G02F3/02 , H01S5/04 , H01S5/042 , H01S5/06 , H01S5/323 , H01L33/00 , H01S3/091 , H01S3/19
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0425 , G02F3/026 , H01S2301/173 , H01S5/0607 , H01S5/32341 , H01S5/3404
摘要： An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.
摘要翻译：光半导体器件具有这样的结构，其中半导体有源层被p型半导体包层和n型半导体包覆层夹在中间，p型接触层形成在p型半导体包层侧，在n型半导体包层侧形成n型接触层，其中在n型接触层上形成两个铁磁层，并在p型接触层上形成两个铁磁层。将彼此垂直相对的一对铁磁层的磁化方向设定为彼此平行，并且相邻的铁磁层的磁化方向相互反转。

94. 发明授权

US5889913A Optical semiconductor device and method of fabricating the same 失效
标题翻译：光半导体装置及其制造方法
公开(公告)号：US5889913A
公开(公告)日：1999-03-30
申请号：US614649
申请日：1996-03-13
申请人： Masaki Tohyama , Yuzo Hirayama
发明人： Masaki Tohyama , Yuzo Hirayama
IPC分类号： G02B6/12 , G02F1/025 , H01S5/026 , H01S5/042 , H01S5/227 , G02B6/10
CPC分类号： G02B6/12004 , G02F1/025 , H01S5/227 , G02B2006/12121 , G02B2006/12142 , G02B2006/12173 , H01S5/0265 , H01S5/0425 , H01S5/2275 , H01S5/3072
摘要： This invention provides an optical semiconductor device including a semiconductor substrate having a mesa stripe in which at least an optical waveguide layer is formed, a major surface of the semiconductor substrate being a crystal plane, a semiconductor buried layer formed on the two side surfaces of the mesa stripe, and a stripe cladding layer formed on the mesa stripe region and the semiconductor buried layer and having a shape whose section is substantially trapezoidal and whose side surfaces are crystal planes.
摘要翻译：本发明提供一种光半导体装置，其包括具有台面条状的半导体基板，至少形成有光波导层，半导体基板的主表面为晶面，半导体掩埋层形成在台阶条纹，以及形成在台面条状区域和半导体掩埋层上的条状包覆层，并且具有截面基本上梯形且侧面为晶面的形状。

95. 发明授权

US5253264A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US5253264A
公开(公告)日：1993-10-12
申请号：US800250
申请日：1991-11-29
申请人： Nobuo Suzuki , Yuzo Hirayama , Masaaki Onomura
发明人： Nobuo Suzuki , Yuzo Hirayama , Masaaki Onomura
IPC分类号： H01S5/06 , H01S5/062 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/227 , H01S5/34313 , H01S5/0618 , H01S5/06226 , H01S5/12 , H01S5/2059 , H01S5/2205 , H01S5/2275 , H01S5/34306
摘要： A semiconductor laser of multiple quantum well structure includes a multiple quantum well active layer having a well layer of In.sub.x Ga.sub.1-x As (0

96. 发明授权

US5084410A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5084410A
公开(公告)日：1992-01-28
申请号：US257519
申请日：1988-10-14
申请人： Kazuhiro Eguchi , Tetsuo Sadamasa , Hideto Furuyama , Yuzo Hirayama
发明人： Kazuhiro Eguchi , Tetsuo Sadamasa , Hideto Furuyama , Yuzo Hirayama
IPC分类号： H01L21/20 , H01L29/04 , H01L29/10 , H01L31/105 , H01L33/00 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/323
CPC分类号： H01L21/02639 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L29/045 , H01L29/1029 , H01L31/105 , H01L33/0062 , H01S5/2203 , H01S5/227 , H01S5/2201 , H01S5/3202 , H01S5/32391 , Y10S438/973
摘要： A semiconductor device which comprises a semiconductor substrate having a surface orientation substantially in a {100}-orientation is provided. On the semiconductor substrate, plural steps formed in a direction deviated substantially from a -direction by 5 degrees or more are formed. The steps, which are mesa and concave portions, are buried by plural semiconductor crystal layers grown by the use of MOCVD or the like. A method of manufacturing such a device is also provided.

97. 发明授权

US4958202A Semiconductor light-emitting device and method of manufacturing the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US4958202A
公开(公告)日：1990-09-18
申请号：US382345
申请日：1989-07-20
申请人： Jun'ichi Kinoshita , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama
发明人： Jun'ichi Kinoshita , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2277 , Y10S148/05 , Y10S148/051 , Y10S148/066 , Y10S148/095 , Y10T29/413
摘要： An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.

98. 发明授权

US06586775B2 Light-emitting device and a display apparatus having a light-emitting device 失效
标题翻译：发光装置和具有发光装置的显示装置
公开(公告)号：US06586775B2
公开(公告)日：2003-07-01
申请号：US09531490
申请日：2000-03-20
申请人： Yuzo Hirayama
发明人： Yuzo Hirayama
IPC分类号： H01L2915
CPC分类号： G02B6/1225 , B82Y20/00 , H01J63/04 , H01K1/08 , H01K1/10 , H01K1/14 , H01K1/28
摘要： A light emitting device which emits visible light through heat radiation of a tungsten filament. Photonic crystal structures in each of which Ag spheres are arranged in a TiO2 film are provided around the filament. Whereas radiation of infrared light from the filament is suppressed, radiation of visible light is enhanced.
摘要翻译：一种通过钨丝的热辐射发射可见光的发光装置。在所述长丝周围设置有在TiO 2膜中排列有Ag球的光子晶体结构。而来自灯丝的红外光的辐射被抑制，可见光的辐射增强。

99. 发明授权

US4862474A Semicondutor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4862474A
公开(公告)日：1989-08-29
申请号：US198866
申请日：1988-05-26
申请人： Motoyasu Morinaga , Hideto Furuyama , Masaru Nakamura , Nobuo Suzuki , Yuzo Hirayama , Hajime Okuda
发明人： Motoyasu Morinaga , Hideto Furuyama , Masaru Nakamura , Nobuo Suzuki , Yuzo Hirayama , Hajime Okuda
IPC分类号： H01S5/02 , H01S5/026 , H01S5/042 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0422 , H01S5/227 , H01S5/0208 , H01S5/0425 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.

100. 发明授权

US4858241A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4858241A
公开(公告)日：1989-08-15
申请号：US198859
申请日：1988-05-26
申请人： Nobuo Suzuki , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama , Hajime Okuda , Masaru Nakamura , Nawoto Motegi
发明人： Nobuo Suzuki , Motoyasu Morinaga , Hideto Furuyama , Yuzo Hirayama , Hajime Okuda , Masaru Nakamura , Nawoto Motegi
IPC分类号： H01S5/02 , H01S5/026 , H01S5/042 , H01S5/227 , H01S5/323
CPC分类号： H01S5/0422 , H01S5/026 , H01S5/227 , H01S5/0208 , H01S5/0425 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions.
摘要翻译：一种半导体激光器件，包括在半导体衬底上形成预定间隔的半导体台面部分，形成在台面部分和半导体衬底之间的有源区域，其具有禁带宽度小于台面部分和半导体衬底的宽度的半导体用于有助于发光的一对掩埋部分，形成在有源区域的宽度方向两侧并且与有源区域接触的一对掩埋部分，并且由禁带宽度大于有源区域的宽度的半导体构成，埋入部分和有源区域小于台面部分，从而在台面部分和半导体衬底之间的每个掩埋部分的一侧形成间隙，以使台面部分和半导体衬底电绝缘，形成的支撑部分与台面部分一体地相对于台面部分支撑与有源区域和掩埋部分相关联的衬底。

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