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91. 发明申请

US20080094886A1 NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY 有权
标题翻译：基于非均匀开关的非易失性磁性存储器
公开(公告)号：US20080094886A1
公开(公告)日：2008-04-24
申请号：US11674124
申请日：2007-02-12
申请人： Rajiv Yadav Ranjan , Petro Estakhri , Mahmud Assar , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Petro Estakhri , Mahmud Assar , Parviz Keshtbod
IPC分类号： G11C11/14 , H01L21/8239
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： One embodiment of the present invention includes a non-uniform switching based non-volatile magnetic memory element including a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer, wherein switching current is applied, in a direction that is substantially perpendicular to the fixed, barrier, first free, non-uniform and the second free layers causing switching between states of the first, second free and non-uniform layers with substantially reduced switching current.
摘要翻译：本发明的一个实施例包括：非均匀的基于开关的非易失性磁存储元件，其包括固定层，形成在固定层顶部的阻挡层，形成在阻挡层顶部上的第一自由层，形成在第一自由层的顶部上的均匀开关层（NSL）和形成在非均匀开关层顶部的第二自由层，其中施加开关电流，其基本上垂直于固定屏障的方向，第一自由，不均匀和第二自由层引起第一，第二自由和非均匀层的状态之间的切换，其开关电流大大降低。

92. 发明申请

US20070201265A1 HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY 有权
标题翻译：高容量低成本多状态磁记忆体
公开(公告)号：US20070201265A1
公开(公告)日：2007-08-30
申请号：US11678515
申请日：2007-02-23
申请人： Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , B82Y10/00 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/5607 , G11C2211/5615 , H01L27/222 , H01L27/228 , H01L43/08
摘要： One embodiment of the present invention includes a multi-state current-switching magnetic memory element having a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
摘要翻译：本发明的一个实施例包括具有由用于存储多于一位的信息的非磁性层分隔的磁隧道结（MTJ）堆叠的多状态电流切换磁存储元件，其中施加到存储器元件导致切换到不同的状态。

93. 发明授权

US06777066B1 Perpendicular magnetic recording media with improved interlayer 有权
标题翻译：具有改善中间层的垂直磁记录介质
公开(公告)号：US06777066B1
公开(公告)日：2004-08-17
申请号：US09986063
申请日：2001-11-07
申请人： Chung-Hee Chang , Rajiv Yadav Ranjan
发明人： Chung-Hee Chang , Rajiv Yadav Ranjan
IPC分类号： G11B5667
CPC分类号： G11B5/667 , G11B5/656
摘要： A low noise, high areal recording density, perpendicular magnetic recording medium comprises: (a) a non-magnetic substrate having a surface; and (b) a layer stack formed over the substrate surface, the layer stack comprising, in overlying sequence from the substrate surface: (i) a magnetically soft underlayer; (ii) at least one non-magnetic interlayer; and (iii) a CoCr-based, magnetically hard perpendicular recording layer; wherein the compositions of the at least one non-magnetic interlayer and the CoCr-based, magnetically hard perpendicular recording layer are selected to provide the medium with a negative nucleation field Hn, remanent squareness of about 1, and high coercivity of at least about 5,000 Oe. A method for manufacturing the medium by means of DC magnetron sputtering of layers (i)-(iii) is also disclosed.
摘要翻译：低噪声，高面积记录密度，垂直磁记录介质包括：（a）具有表面的非磁性基底; 以及（b）形成在所述衬底表面上的层叠层，所述层堆叠以从衬底表面的顺序包括：（i）软磁性底层;（ii）至少一个非磁性中间层; 和（iii）基于CoCr的磁性硬的垂直记录层;其中选择所述至少一个非磁性中间层和所述CoCr基磁性硬垂直记录层的组成以向所述介质提供负成核场Hn ，约1的残余矩形度和至少约5,000Oe的高矫顽力。还公开了通过层（i） - （iii）的DC磁控溅射制造介质的方法。

94. 发明授权

US06416881B1 Media with a metal oxide sealing layer 失效
标题翻译：介质与金属氧化物密封层
公开(公告)号：US06416881B1
公开(公告)日：2002-07-09
申请号：US09571506
申请日：2000-05-15
申请人： Lin Huang , Liji Huang , Qixu David Chen , Charles Leu , Rajiv Yadav Ranjan
发明人： Lin Huang , Liji Huang , Qixu David Chen , Charles Leu , Rajiv Yadav Ranjan
IPC分类号： G11B564
CPC分类号： G11B5/732 , G11B5/7325 , G11B5/738 , Y10S428/90 , Y10T428/12465 , Y10T428/12667 , Y10T428/12847 , Y10T428/26
摘要： Sputter-deposited amorphous metal oxide films on substrates comprising an aluminum-containing support and a Ni-containing pre-coat reduce Ni ion migration significantly from the substrate onto the top surface of the magnetic recording media. Longitudinal magnetic recording media deposited on metal oxide sealing layers have very good magnetic recording performances and are suitable for high density recording application.
摘要翻译：包含含铝载体和含Ni预涂层的基板上的溅射沉积的非晶金属氧化物膜显着地减少了从基板到磁记录介质顶表面的Ni离子迁移。沉积在金属氧化物密封层上的纵向磁记录介质具有非常好的磁记录性能，适用于高密度记录应用。

95. 发明授权

US06403241B1 CoCrPtB medium with a 1010 crystallographic orientation 有权
标题翻译： CoCrPtB介质，具有1010晶体取向
公开(公告)号：US06403241B1
公开(公告)日：2002-06-11
申请号：US09496342
申请日：2000-02-02
申请人： Qixu (David) Chen , Samuel Dacke Harkness, IV , Zhong (Stella) Wu , Lin Huang , Rajiv Yadav Ranjan , Charles Leu
发明人： Qixu (David) Chen , Samuel Dacke Harkness, IV , Zhong (Stella) Wu , Lin Huang , Rajiv Yadav Ranjan , Charles Leu
IPC分类号： G11B566
CPC分类号： G11B5/732 , C30B23/02 , C30B29/22 , C30B29/52 , G11B5/656 , G11B5/7325 , Y10T428/265
摘要： A magnetic recording medium on glass or Al substrates with film structure of NiAl seed layer/CrMo underlayer/CoCrPtB magnetic layer/carbon overcoat, in which the magnetic layer has a substantially (10.0) crystallographic orientation, exhibits high coercivity, high signal-to-medium noise ratio and low transition jitter. The medium can be used for high-density longitudinal magnetic recording. Embodiments include forming a surface oxidized NiAl sub-seed layer on a glass or glass-ceramic substrate, and sequentially depositing a seed layer of NiAl, an underlayer of Cr or Cr-alloy, such as CrMo, and a CoCrPtB magnetic layer.
摘要翻译：在玻璃或具有NiAl种子层/ CrMo底层/ CoCrPtB磁性层/碳外涂层的膜结构的Al衬底上的磁记录介质，其中磁性层具有基本上（10.0）的晶体取向，表现出高矫顽力，高信噪比，中等噪声比和低跃迁抖动。该介质可用于高密度纵向磁记录。实施例包括在玻璃或玻璃陶瓷基板上形成表面氧化的NiAl亚晶种层，并依次沉积NiAl种子层，Cr或Cr合金如CrMo和CoCrPtB磁性层的底层。

96. 发明授权

US6156422A High density magnetic recording medium with high Hr and low Mrt 有权
标题翻译：高密度，低密度磁记录介质
公开(公告)号：US6156422A
公开(公告)日：2000-12-05
申请号：US188678
申请日：1998-11-10
申请人： Zhong (Stella) Wu , Rajiv Yadav Ranjan
发明人： Zhong (Stella) Wu , Rajiv Yadav Ranjan
IPC分类号： G11B5/73 , G11B5/66
CPC分类号： G11B5/732 , G11B5/7325 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magnetic recording medium exhibiting high in-plane anisotropy at low Mrt is formed employing a NiAl seedlayer and a CrMn underlayer thereon. Embodiments include magnetic recording media with a CoCrPtTa magnetic alloy layer exhibiting a Hr greater than 2800 Oe with a Mrt no greater than 0.5 memu/cm.sup.2. The resulting media also exhibit high S* and low media noise.
摘要翻译：在低Mrt处表现出高的面内各向异性的磁记录介质使用NiAl种层和CrMn底层在其上形成。实施方案包括具有表现出大于2800Oe的Hr的CoCrPtTa磁性合金层的磁记录介质，Mrt不大于0.5 memu / cm 2。所得到的介质也表现出高S *和低介质噪声。

97. 发明授权

US5908514A Magnetic alloy for improved corrosion resistance and magnetic performance 失效
标题翻译：磁性合金，提高耐腐蚀性和磁性能
公开(公告)号：US5908514A
公开(公告)日：1999-06-01
申请号：US740211
申请日：1996-10-24
申请人： Rajiv Yadav Ranjan , Tu Chen , Tsutomu Tom Yamashita , John Ko-Jen Chen
发明人： Rajiv Yadav Ranjan , Tu Chen , Tsutomu Tom Yamashita , John Ko-Jen Chen
IPC分类号： C22C19/07 , G11B5/64 , G11B5/66 , H01F10/16 , H01F1/04
CPC分类号： G11B5/656 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12861 , Y10T428/31678
摘要： A new magnetic alloy exhibits high Hc and Ms while exhibiting excellent corrosion resistance, thereby providing ideal physical properties for high density recording applications. Other parameters of the media, such as SNR, PW50, and S are at least maintained, if not also improved. The alloy contains cobalt and up to 10 at. % Ni, up to 20 at. % Pt, up to 10 at. % Ta, up to 10 at. % Ti, and optionally up to 6 at. % B. The ratio of the tantalum to titanium in the alloy is between 3:1 and 1:3. The alloy is deposited by vacuum deposition (typically sputtering) on a similarly deposited non-magnetic alloy under layer. Nitrogen and/or oxygen may be introduced into the alloy during deposition to improve SNR. Other corrosion-resistant thin film alloys may also be obtained by the inclusion of Ta and Ti.
摘要翻译：新的磁性合金表现出高Hc和Ms，同时具有优异的耐腐蚀性，从而为高密度记录应用提供了理想的物理性能。至少保持介质的其他参数，如SNR，PW50和S，如果不能改善。该合金含有钴，最多可达10英寸。％Ni，最多20盎司。％Pt，最多10个。％Ta，高达10 at。％Ti，任选至多6at。％B。合金中钽与钛的比例为3：1至1：3。该合金通过真空沉积（通常是溅射）沉积在类似地沉积的非磁性合金层下。可以在沉积期间将氮和/或氧引入合金以提高SNR。也可以通过包含Ta和Ti来获得其它耐腐蚀的薄膜合金。

98. 发明授权

US11678586B2 Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same 有权
公开(公告)号：US11678586B2
公开(公告)日：2023-06-13
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H10N50/80 , G11C11/16 , H10N50/01 , H10N50/10
CPC分类号： H10N50/80 , G11C11/161 , H10N50/01 , H10N50/10 , Y10T428/1107 , Y10T428/1114
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL. The second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

99. 发明授权

US09196332B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer 有权
标题翻译：垂直磁隧道结（pMTJ），具有平面内静磁切换增强层
公开(公告)号：US09196332B2
公开(公告)日：2015-11-24
申请号：US13161412
申请日：2011-06-15
申请人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
发明人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： H01L29/82 , G11C11/16 , H01L43/08
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。当电流流过STTMRAM元件时，自由层的磁方向切换。通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向并且在自由层上产生磁静电场，导致磁矩的自由层的外边缘以面内分量倾斜，同时最小程度地干扰自由层中心处的磁矩，以便自由层的切换和降低阈值电压/电流。

100. 发明授权

US08772886B2 Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer 有权
标题翻译：具有分级合成自由层的自旋转移磁矩随机存取存储器（STTMRAM）
公开(公告)号：US08772886B2
公开(公告)日：2014-07-08
申请号：US13099308
申请日：2011-05-02
申请人： Yiming Huai , Rajiv Yadav Ranjan , Ioan Tudosa , Roger Klas Malmhall , Yuchen Zhou
发明人： Yiming Huai , Rajiv Yadav Ranjan , Ioan Tudosa , Roger Klas Malmhall , Yuchen Zhou
IPC分类号： H01L29/82 , H01L43/10 , H01F10/32 , G11C11/16 , B82Y25/00 , H01L43/08 , H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.
摘要翻译：自旋转矩存储器随机存取存储器（STTMRAM）元件能够在向其施加电流以存储数据时切换状态，并且包括以下层。反铁磁层，形成在反铁磁层的顶部上的固定层，形成在固定层的第二磁性层顶部的阻挡层，以及形成在屏障顶部上的第一磁性层的自由层形成在所述第一磁性层的顶部上的第二磁性层，形成在所述第二磁性层的顶部上的非磁性绝缘层和形成在所述非磁性绝缘层的顶部上的第三磁性层。在非磁性绝缘层的顶部上形成覆盖层。

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