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91. 发明授权

US07741169B2 Mobility enhancement by strained channel CMOSFET with single workfunction metal-gate and fabrication method thereof 有权
标题翻译：具有单功函数金属栅极的应变通道CMOSFET的移动性增强及其制造方法
公开(公告)号：US07741169B2
公开(公告)日：2010-06-22
申请号：US12185740
申请日：2008-08-04
申请人： Shin-Chii Lu , Yu-Ming Lin , Min-Hung Lee , Zing-Way Pei , Wen Yi Hsieh
发明人： Shin-Chii Lu , Yu-Ming Lin , Min-Hung Lee , Zing-Way Pei , Wen Yi Hsieh
IPC分类号： H01L21/8238 , H01L21/8234
CPC分类号： H01L29/1054 , H01L21/265 , H01L21/823807 , H01L21/823864 , H01L29/4966 , H01L29/517 , H01L29/78 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.
摘要翻译：本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

92. 发明申请

US20100141472A1 Decoding Method and Apparatus for Infrared Remote Control Commands 有权
标题翻译：红外遥控命令的解码方法和装置
公开(公告)号：US20100141472A1
公开(公告)日：2010-06-10
申请号：US12541466
申请日：2009-08-14
申请人： Chih Chiang Hsu , Yu-Ming Lin
发明人： Chih Chiang Hsu , Yu-Ming Lin
IPC分类号： G08C19/16
CPC分类号： G08C23/04
摘要： A decoding method and apparatus capable of automatically adjusting a sampling period is provided. The decoding apparatus decodes a serial code including at least one header pulse and a plurality of data pulses. The decoding apparatus includes a detecting unit for detecting the header pulse to generate an initialization signal, a determining unit for determining a sampling period according to the initialization signal and a pulse width of one of the data pulses, and a decoding unit for decoding the data pulses according to the sampling period.
摘要翻译：提供能够自动调整采样周期的解码方法和装置。解码装置对包括至少一个头脉冲和多个数据脉冲的串行码进行解码。解码装置包括：检测单元，用于检测报头脉冲以产生初始化信号;确定单元，用于根据初始化信号和数据脉冲之一的脉冲宽度确定采样周期;以及解码单元，用于解码数据脉冲根据采样周期。

93. 发明授权

US07267859B1 Thick porous anodic alumina films and nanowire arrays grown on a solid substrate 失效
标题翻译：在固体基底上生长的厚多孔阳极氧化铝膜和纳米线阵列
公开(公告)号：US07267859B1
公开(公告)日：2007-09-11
申请号：US10303653
申请日：2002-11-25
申请人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
发明人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
IPC分类号： B32B3/10 , B32B9/00 , B32B15/00 , G03C5/00 , C23C28/00
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译：目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。在基板上形成阳极氧化铝模板。当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。可以操作基底以获得高光学质量的自立式氧化铝模板和基本平坦的表面。也可以在图案化和非平面表面上生长PAA膜。此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。

94. 发明申请

US20070149397A1 Photocatalytic composite material, method for producing the same and application thereof 审中-公开
标题翻译：光催化复合材料及其制备方法及应用
公开(公告)号：US20070149397A1
公开(公告)日：2007-06-28
申请号：US11489555
申请日：2006-07-20
申请人： Yao-Hsuan Tseng , Yao-Ling Huang , Shu-Ling Liu , Yu-Ming Lin , Chia-Hung Huang
发明人： Yao-Hsuan Tseng , Yao-Ling Huang , Shu-Ling Liu , Yu-Ming Lin , Chia-Hung Huang
IPC分类号： B01J23/00 , B01J29/04 , B01J21/18 , C01B31/08
CPC分类号： B01J35/004 , B01D53/88 , B01D2255/802 , B01J21/063 , B01J21/18 , B01J35/04 , B01J35/06 , B01J37/0215 , C02F2305/10
摘要： The present invention relates to a photocatalytic composite material, a method for producing the same and application thereof. This invention can maintain the activity of a photocatalytic adsorbent and reduce energy consumption by immersing an adsorbent material into a nano-photocatalyst sol to immobilize the nano-sized photocatalyst on the surface of the adsorbent material without a high-temperature calcinations step or using an adhesive agent. Besides, immobilizing the photocatalytic composite material onto a filter can be applied to the equipment for cleaning environment.
摘要翻译：本发明涉及一种光催化复合材料及其制备方法及其应用。本发明可以保持光催化吸附剂的活性并且通过将吸附剂材料浸入纳米光催化剂溶胶中来降低能量消耗，以将纳米级光催化剂固定在吸附剂材料的表面上，而无需高温煅烧步骤或使用粘合剂代理商此外，将光催化复合材料固定在过滤器上可以应用于清洁环境的设备。

95. 发明申请

US20070069298A1 Mobility enhancement by strained channel CMOSFET with single workfunction metal-gate and fabrication method thereof 审中-公开
标题翻译：具有单功函数金属栅极的应变通道CMOSFET的移动性增强及其制造方法
公开(公告)号：US20070069298A1
公开(公告)日：2007-03-29
申请号：US11324085
申请日：2005-12-29
申请人： Shin-Chii Lu , Yu-Ming Lin , Min-Hung Lee , Zing-Way Pei , Wen Hsieh
发明人： Shin-Chii Lu , Yu-Ming Lin , Min-Hung Lee , Zing-Way Pei , Wen Hsieh
IPC分类号： H01L23/62
CPC分类号： H01L29/1054 , H01L21/265 , H01L21/823807 , H01L21/823864 , H01L29/4966 , H01L29/517 , H01L29/78 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.
摘要翻译：本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

96. 发明授权

US4918239A Method of producing cyclohexanone from cyclohexanol through oxidative dehydrogenation 失效
标题翻译：通过氧化脱氢从环己醇生产环己酮的方法
公开(公告)号：US4918239A
公开(公告)日：1990-04-17
申请号：US289680
申请日：1988-12-27
申请人： Ikai Wang , Yu-Ming Lin
发明人： Ikai Wang , Yu-Ming Lin
IPC分类号： B01J23/80 , B01J23/89 , C07C45/39
CPC分类号： B01J23/8953 , B01J23/80 , B01J23/8926 , C07C45/39
摘要： This invention provides a method for producing cyclohexanone from cyclohexanol using oxidative dehydrogenation. More particularly, this invention comprises adding a certain amount of a gaseous oxidant to the cyclohexanol feed stream; and, converting the cyclohexanol to cyclohexanone over a CuO-ZnO catalyst.
摘要翻译：本发明提供了使用氧化脱氢从环己醇制备环己酮的方法。更具体地说，本发明包括向环己醇进料流中加入一定量的气态氧化剂; 并通过CuO-ZnO催化剂将环己醇转化成环己酮。

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