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91. 发明授权

US08194363B2 Thin film magnetic head provided with dual synthetic free layers 有权
标题翻译：薄膜磁头配有双层合成自由层
公开(公告)号：US08194363B2
公开(公告)日：2012-06-05
申请号：US12379624
申请日：2009-02-26
申请人： Shinji Hara , Yoshihiro Tsuchiya
发明人： Shinji Hara , Yoshihiro Tsuchiya
IPC分类号： G11B21/24
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996
摘要： A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration.
摘要翻译：薄膜磁头包括第一至第四自由层，间隔层和偏置磁场施加层。当偏置磁场施加到第一和第二自由层时，第一自由层和第二自由层在与ABS的正交方向彼此相反的方向上被磁化，并且被交换耦合，使得磁化方向偏置磁场和第一自由层是锐角的，使得偏置磁场的磁化方向与第二自由层之间的角度是锐角的。类似地，第三层和第四层具有相同的构造。

92. 发明授权

US08166242B2 Distributed disk cache system and distributed disk cache method 失效
标题翻译：分布式磁盘缓存系统和分布式磁盘缓存方法
公开(公告)号：US08166242B2
公开(公告)日：2012-04-24
申请号：US12471940
申请日：2009-05-26
申请人： Kazuichi Oe , Tatsuo Kumano , Yasuo Noguchi , Yoshihiro Tsuchiya , Kazutaka Ogihara , Masahisa Tamura , Tetsutaro Maruyama , Takashi Watanabe , Minoru Kamosida , Shigeyuki Miyamoto
发明人： Kazuichi Oe , Tatsuo Kumano , Yasuo Noguchi , Yoshihiro Tsuchiya , Kazutaka Ogihara , Masahisa Tamura , Tetsutaro Maruyama , Takashi Watanabe , Minoru Kamosida , Shigeyuki Miyamoto
IPC分类号： G06F13/00 , G06F12/00 , G06F15/167
CPC分类号： G06F12/0866 , G06F3/061 , G06F3/0635 , G06F3/0656 , G06F3/067 , G06F12/0888
摘要： According to an aspect of the embodiment, a packet analyzing apparatus monitors a concentration level of input and output access from an access apparatus to a disk device, specifies a data area to which the concentration level of input and output access exceeds a first threshold, and instructs a storage server to cache the data area. The packet analyzing apparatus monitors a concentration level of input and output access to a data area to which the data area is cached, and, when the concentration level of input and output access is below a second threshold, instructs the storage server to release the caching.
摘要翻译：根据实施例的一个方面，分组分析装置监视从访问装置到盘装置的输入和输出访问的集中度，指定输入和输出访问的浓度水平超过第一阈值的数据区域，以及指示存储服务器缓存数据区域。分组分析装置监视对数据区域被缓存的数据区域的输入和输出访问的集中水平，并且当输入和输出访问的浓度水平低于第二阈值时，指示存储服务器释放缓存。

93. 发明授权

US08156381B2 Storage management apparatus and storage system 失效
标题翻译：存储管理装置和存储系统
公开(公告)号：US08156381B2
公开(公告)日：2012-04-10
申请号：US12331662
申请日：2008-12-10
申请人： Masahisa Tamura , Yasuo Noguchi , Kazutaka Ogihara , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Riichiro Take
发明人： Masahisa Tamura , Yasuo Noguchi , Kazutaka Ogihara , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Riichiro Take
IPC分类号： G06F11/00
CPC分类号： G06F11/1076 , G06F3/0653 , G06F11/2069 , G06F11/2087 , G06F11/3034 , G06F11/3072 , G06F2211/1088
摘要： A storage management apparatus manages a plurality of storage apparatuses connected to each other over a network in a storage system that distributes data among the storage apparatuses and stores the data therein. The storage management apparatus has a patrol process executing unit configured to execute a patrol process to confirm whether a storage area of each storage apparatus operates normally and a patrol flow controlling unit configured to control a patrol flow indicating the speed of the patrol process executed by the patrol process executing unit.
摘要翻译：存储管理装置通过在存储装置中分配数据的存储系统中的网络上的多个存储装置进行管理，并存储数据。所述存储管理装置具有：巡检处理执行单元，其被配置为执行巡视处理，以确认每个存储装置的存储区域是否正常运行;巡检流控制单元，被配置为控制指示由所述巡航过程执行的巡视过程的速度的巡视流巡逻过程执行单元。

94. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

95. 发明授权

US07876534B2 Magneto-resistive effect device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻效应器，磁盘系统
公开(公告)号：US07876534B2
公开(公告)日：2011-01-25
申请号：US12014575
申请日：2008-01-15
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
IPC分类号： G11B5/11 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.
摘要翻译：磁阻器件包括磁阻单元，上屏蔽层和下屏蔽层，以使磁阻单元保持在它们之间。磁阻单元包括在中间与非磁性金属中间层堆叠的非磁性金属中间层，第一铁磁层和第二铁磁层。当不施加偏置磁场时，第一和第二铁磁层具有相互反平行的磁化。磁阻单元还包括第一和第二侧屏蔽层，以及第一和第二偏置层，其被定位成磁耦合到第一和第二侧屏蔽层，其中从偏置磁场馈送的磁通量通过第一和第二侧屏蔽层位于磁阻单元附近，使得第一和第二铁磁层的磁化基本上彼此正交。

96. 发明申请

US20100232066A1 Magneto-resistive effect element provided with GaN spacer layer 有权
标题翻译：具有GaN间隔层的磁阻效应元件
公开(公告)号：US20100232066A1
公开(公告)日：2010-09-16
申请号：US12382137
申请日：2009-03-10
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/60 , G11B5/127 , G11B5/48
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.
摘要翻译：磁阻效应（MR）元件包括第一磁性层和第二磁性层，其中第一和第二磁性层的磁化方向的相对角度根据外部磁场而改变; 以及设置在第一磁性层和第二磁性层之间的间隔层。间隔层包含氮化镓（GaN）作为主要成分。根据本发明的一个实施例的薄膜磁头具有以下结构：上述具有第一磁性层和第二磁性层作为自由层的MR元件，其中两层中的磁化方向根据外部磁场变化; 偏置磁场施加层，其在与空气轴承表面（ABS）正交的方向上对第一和第二磁性层施加偏置磁场; 偏置磁场施加层形成在从ABS看到的MR元件的后侧; 并且感测电流在与MR元件的层表面正交的方向上流动。

97. 发明申请

US20100214701A1 Magnetoresistive effect element in cpp-type structure and magnetic disk device 有权
标题翻译： cpp型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US20100214701A1
公开(公告)日：2010-08-26
申请号：US12379625
申请日：2009-02-26
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/127
CPC分类号： G01R33/098 , B82Y25/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T29/49021 , Y10T428/1114 , Y10T428/1171
摘要： An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
摘要翻译：根据本发明的MR元件具有进一步提高MR比的优越效果，因为间隔层40的结构由具有某些材料的特定三层结构构成，并且第一铁磁层30和第二铁磁层50含有一定量的选自氮（N），碳（C）和氧（O）的元素。

98. 发明申请

US20100191757A1 RECORDING MEDIUM STORING ALLOCATION CONTROL PROGRAM, ALLOCATION CONTROL APPARATUS, AND ALLOCATION CONTROL METHOD 有权
标题翻译：记录存储分配控制程序，分配控制装置和分配控制方法
公开(公告)号：US20100191757A1
公开(公告)日：2010-07-29
申请号：US12651522
申请日：2010-01-04
申请人： Yasuo NOGUCHI , Kazutaka Ogihara , Masahisa Tamura , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Takashi Watanabe , Tatsuo Kumano , Kazuichi Oe
发明人： Yasuo NOGUCHI , Kazutaka Ogihara , Masahisa Tamura , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Takashi Watanabe , Tatsuo Kumano , Kazuichi Oe
IPC分类号： G06F12/02 , G06F17/30
CPC分类号： G06F3/0611 , G06F3/0608 , G06F3/065 , G06F3/0667 , G06F3/0674 , Y10S707/99956
摘要： An allocation control apparatus allocates duplicate logical volume divided areas to virtual storage areas that do not have data storage area in the physical storage area. The apparatus associates identification information of the allocated virtual storage areas, of the duplicate logical volume divided areas, and of duplication source logical volume divided areas to be set in the management information. The apparatus detects, upon a data writing request, based on the management information, the unallocated real storage area in the logical volume divided area. The apparatus reallocates the real storage area to the duplicate logical volume divided area to update the management information. The apparatus identifies, based on the management information, the real storage area allocated to the duplication source logical volume divided area corresponding to the duplicate logical volume divided area. The apparatus copies data stored in the real storage area to the real storage area.
摘要翻译：分配控制装置将重复的逻辑卷分割区域分配给物理存储区域中没有数据存储区域的虚拟存储区域。该装置将所分配的虚拟存储区域，重复逻辑卷分割区域的标识信息和要设置在管理信息中的复制源逻辑卷分割区域相关联。该装置根据管理信息在数据写入请求时检测逻辑卷划分区域中未分配的实际存储区域。该装置将真实存储区域重新分配给重复的逻辑卷划分区域，以更新管理信息。该装置基于管理信息识别分配给与重复的逻辑卷分割区域对应的复制源逻辑卷分割区域的实际存储区域。该装置将存储在真实存储区域中的数据复制到真实存储区域。

99. 发明申请

US20100027168A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 失效
标题翻译：薄膜磁头具有一对磁性层，其磁化由屏蔽层控制
公开(公告)号：US20100027168A1
公开(公告)日：2010-02-04
申请号：US12219841
申请日：2008-07-29
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3912 , H01L43/08
摘要： A thin film magnetic head comprise an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer comprises a first exchange coupling magnetic field application layer, a first antimagnetic layer, a second exchange coupling magnetic field application layer, and a second antimagnetic layer. The first antimagnetic layer is provided in contact with the first exchange coupling magnetic field application layer on the rear face of the first exchange coupling magnetic field application layer and which is antimagnetically coupled with the first exchange coupling magnetic field application layer. The second shield layer has the same configuration as that of the first shield layer.
摘要翻译：薄膜磁头包括由第一和第二MR磁性层，第一和第二屏蔽层以及设置在MR叠层的空气轴承表面（ABS）的相对侧上的偏置磁场施加层组成的MR层叠体以便施加相对于ABS正交的偏置磁场。第一屏蔽层包括第一交换耦合磁场施加层，第一防磁层，第二交换耦合磁场施加层和第二防磁层。第一防磁层设置成与第一交换耦合磁场施加层的背面上的第一交换耦合磁场施加层接触，并且与第一交换耦合磁场施加层反磁耦合。第二屏蔽层具有与第一屏蔽层相同的构造。

100. 发明申请

US20090319749A1 PROGRAM, APPARATUS AND METHOD FOR STORAGE MANAGEMENT 失效
标题翻译：程序，设备和存储管理方法
公开(公告)号：US20090319749A1
公开(公告)日：2009-12-24
申请号：US12546440
申请日：2009-08-24
申请人： Kazutaka Ogihara , Yasuo Noguchi , Yoshihiro Tsuchiya , Masahisa Tamura , Tetsutaro Maruyama , Kazuichi Oe , Takashi Watanabe , Tatsuo Kumano
发明人： Kazutaka Ogihara , Yasuo Noguchi , Yoshihiro Tsuchiya , Masahisa Tamura , Tetsutaro Maruyama , Kazuichi Oe , Takashi Watanabe , Tatsuo Kumano
IPC分类号： G06F12/02
CPC分类号： G06F3/0653 , G06F3/061 , G06F3/0635 , G06F3/067
摘要： In a computer for executing processing based on a storage management program, a management information storing unit designates, from the data blocks having the same content, main-data used as an access destination and sub-data used as a backup, and stores management information that registers storage nodes as allocation destinations of the respective main-data and sub-data; a load information collecting unit continuously collects load information on the storage nodes; a replacement object detecting unit detects a pair of the main-data and the sub-data having the same content and having a predetermined condition such that a load difference between the allocation destination of the main-data and that of the sub-data exceeds a predetermined allowable value; and a management information updating unit replaces roles of the main-data and the sub-data between the detected pair of data blocks.
摘要翻译：在用于执行基于存储管理程序的处理的计算机中，管理信息存储单元从具有相同内容的数据块指定用作访问目的地的主数据和用作备份的子数据，并且存储管理信息其将存储节点注册为相应主数据和子数据的分配目的地; 负载信息收集单元连续收集存储节点上的负载信息; 替换对象检测单元检测具有相同内容并具有预定条件的一对主数据和子数据，使得主数据的分配目的地与子数据的分配目的地之间的负载差异超过预定允许值; 并且管理信息更新单元替换检测到的一对数据块之间的主数据和子数据的角色。

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