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91. 发明授权

US5438220A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US5438220A
公开(公告)日：1995-08-01
申请号：US085056
申请日：1993-07-02
申请人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai , Yoshihiro Yamaguchi , Ichiro Omura , Hideyuki Funaki
发明人： Akio Nakagawa , Norio Yasuhara , Tomoko Matsudai , Yoshihiro Yamaguchi , Ichiro Omura , Hideyuki Funaki
IPC分类号： H01L21/336 , H01L21/74 , H01L21/762 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/78 , H01L29/786 , H01L29/861
CPC分类号： H01L29/404 , H01L21/74 , H01L21/76264 , H01L21/76297 , H01L27/0623 , H01L27/0922 , H01L27/1203 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/66772 , H01L29/7394 , H01L29/7436 , H01L29/7455 , H01L29/749 , H01L29/7824 , H01L29/7835 , H01L29/78624 , H01L29/8611 , H01L21/76275 , H01L21/76286 , H01L29/78603 , H01L2924/0002
摘要： A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.
摘要翻译：高耐压半导体器件包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。第一杂质区由扩散层形成。扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

92. 发明授权

US5428228A Method of operating thyristor with insulated gates 失效
标题翻译：用绝缘栅极操作晶闸管的方法
公开(公告)号：US5428228A
公开(公告)日：1995-06-27
申请号：US164756
申请日：1993-12-10
申请人： Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
发明人： Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
IPC分类号： H01L27/06 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/747
CPC分类号： H01L27/0617 , H01L29/7436 , H01L29/7455 , H01L29/749
摘要： A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.
摘要翻译：具有绝缘栅极的晶闸管包括关断和导通MOSFET。导通MOSFET具有采用p型基极作为沟道并在n型基极和n型发射极上延伸的导通栅极。关断MOSFET具有形成在p型基极层中的n型漏极和源极层，以及在漏极和源极层上延伸的截止栅极。 n型漏极层经由漏电极与p型基极层短路。在n型发射极层附近形成漏电极。当晶闸管关断时，第一电压被施加到导通栅极，并且第二电压被施加到关断栅极，同时第一电压被施加到导通栅极。在第二电压的施加持续预定时间段之后，停止向导通门施加第一电压。通过这种操作，即使使用大电流，晶闸管也可以关闭。

93. 发明授权

US5393952A Plasma torch for cutting use with nozzle protection cap having annular secondary GPS passage and insulator disposed in the secondary gas passage 失效
标题翻译：用于切割的等离子割炬与具有环形二次GPS通道的喷嘴保护帽和设置在二次气体通道中的绝缘体一起使用
公开(公告)号：US5393952A
公开(公告)日：1995-02-28
申请号：US107815
申请日：1993-08-18
申请人： Yoshihiro Yamaguchi , Hitoshi Satoh , Toshiya Shintani
发明人： Yoshihiro Yamaguchi , Hitoshi Satoh , Toshiya Shintani
IPC分类号： H05H1/34 , B23K10/00
CPC分类号： H05H1/34 , H05H2001/3436 , H05H2001/3457 , H05H2001/3468 , H05H2001/3478
摘要： A plasma torch for cutting use comprises a torch body, a water-cooled electrode arranged in the torch body, a nozzle arranged outside the electrode so as to cover the electrode through a plasma gas passage formed therebetween, a nozzle cap covering the nozzle, a nozzle protection cap having, on its front end side, an opening opposing to an orifice of the nozzle and being disposed outside the nozzle cap through an annular secondary gas passage communicating with the opening, the nozzle protection cap being arranged in the secondary gas passage in an electrically insulated state from the electrode and the nozzle, and an insulator disposed in the secondary gas passage and formed of an electrically insulating material, the insulator having a rectifying passage for rectifying a gas flow passing the secondary gas passage. The nozzle protection cap is composed of a front end portion and a base end portion secured to the torch body and the front end portion and the base end portion are detachably coupled with each other.
摘要翻译： PCT No.PCT / JP92 / 00239 Sec。 371日期：1993年8月18日 102（e）日期1993年8月18日PCT提交1992年2月28日PCT公布。公开号WO92 / 15421 日期：1992年9月17日。一种用于切割用途的等离子体焰炬包括：炬体，设置在炬体内的水冷电极，设置在电极外部的喷嘴，以通过形成在其间的等离子体气体通道覆盖电极; 喷嘴盖覆盖喷嘴，喷嘴保护盖在其前端侧具有与喷嘴的孔相对的开口，并且通过与开口连通的环形二次气体通道设置在喷嘴帽的外部，喷嘴保护盖是以与电极和喷嘴的电绝缘状态配置在二次气体通路中的绝缘体，以及设置在二次气体通路中并由电绝缘材料形成的绝缘体，所述绝缘体具有整流通路，用于对通过二次气体的气流进行整流通道。喷嘴保护盖由前端部和固定于炬体的基端部构成，前端部和基端部可拆卸地连结。

94. 发明授权

US5036176A Plasma arc cutter and method of controlling the same 失效
标题翻译：等离子弧刀及其控制方法
公开(公告)号：US5036176A
公开(公告)日：1991-07-30
申请号：US427106
申请日：1989-10-18
申请人： Yoshihiro Yamaguchi , Iwao Kuorkawa
发明人： Yoshihiro Yamaguchi , Iwao Kuorkawa
IPC分类号： B23K9/06 , B23K10/00 , H05H1/36
CPC分类号： B23K9/06 , B23K10/006 , H05H1/36
摘要： In a plasma arc cutter and a method of controlling the same, a rise compensating circuit (39) and a shift compensating circuit (44) both composed of a charging and discharging capacitor and a resistor are respectively inserted in parallel between an electrode-side connection (21) and a nozzle-side connection (35) and between the electrode-side connection (21) and a workpiece-side connection (34), and a diode (33) is provided on the workpiece-side connection in such a manner as to be inserted between a connecting point (36) of the nozzle-side connection and a connecting point (43) of the shift compensating circuit. A detector (31) for controlling a current is provided on the electrode-side connection at a position closer to the electrode side than a connecting point (37) of the rise compensating circuit, and a detector (32) for detecting a shift is provided on the workpiece-side connection at a position closer to the workpiece side than the connecting point (43) of the shift compensating circuit. In addition, to effect cutting after boring, at least one plasma torch ( 14a) for boring and at least one plasma torch (14b) for cutting are provided. Furthermore, the voltage between an electrode (14) and a workpiece (17) or between a nozzle (15) and the workpiece (17) is detected, and the power source is stopped when that voltage exceeds a predetermined value. Consequently, since a shift from a pilot arc to a main arc is facilitated, cutting is performed by the exclusive plasma torch, and the occurrence of a double arc is prevented, cutting precision and cutting efficiency are enhanced.
摘要翻译： PCT No.PCT / JP89 / 00305 Sec。 371日期：1989年10月18日 102（e）日期1989年10月18日PCT 1989年3月23日PCT公布。出版物WO89 / 09110 在等离子弧切割机及其控制方法中，分别将由充放电电容器和电阻器组成的上升补偿电路（39）和移位补偿电路（44）分别插入在电极侧连接部（21）和喷嘴侧连接部（35）之间以及电极侧连接部（21）与工件侧连接部（34）之间并列设置有二极管（33）以插入在喷嘴侧连接的连接点（36）和移动补偿电路的连接点（43）之间的方式连接。在比上升补偿电路的连接点（37）更靠近电极侧的位置处，在电极侧连接处设置用于控制电流的检测器（31），并且提供用于检测偏移的检测器（32）在比移动补偿电路的连接点（43）更靠近工件侧的位置处的工件侧连接。此外，为了在钻孔之后进行切割，提供至少一个用于钻孔的等离子体焰炬（14a）和用于切割的至少一个等离子体焰炬（14b）。此外，检测电极（14）和工件（17）之间或喷嘴（15）与工件（17）之间的电压，并且当电压超过预定值时停止电源。因此，由于能够容易地从先导电弧向主电弧的转移，所以通过专用等离子体焰炬进行切断，防止发生双电弧，提高切割精度和切割效率。

95. 发明授权

US4980743A Conductivity-modulation metal oxide semiconductor field effect transistor 失效
标题翻译：电导率调制金属氧化物半导体场效应晶体管
公开(公告)号：US4980743A
公开(公告)日：1990-12-25
申请号：US160277
申请日：1988-02-25
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L29/78 , H01L27/04 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/68 , H01L29/739 , H01L29/745
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7455
摘要： A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the N base. A source electrode electrically conducts the P base and the source. A first gate electrode insulatively covers a channel region defined by the N.sup.+ source layer in the P base. A P drain layer is formed on an opposite substrate surface. An N.sup.+ second source layer is formed in a P type drain layer by diffusion to define a second channel region. A second gate electrode insulatively covers the second channel region, thus providing a voltage-controlled turn-off controlling transistor. A drain electrode of the MOSFET conducts the P type drain and second source. When the turn-off controlling transistor is rendered conductive to turn off the MOSFET a "shorted anode structure" is temporarily formed wherein the N type base is short-circuited to the drain electrode, whereby case, the flow of carriers accumulated in the N type base into the drain electrode is facilitated to accelerate dispersion of carriers upon turn-off of the transistors.
摘要翻译：导电调制型MOSFET采用N型导电性基板作为N基极。在形成在N基底中的P基底层中形成重掺杂N型导电性的第一源极层。源极电极导电P基极和源极。第一栅极绝缘地覆盖由P基底中的N +源层限定的沟道区域。在相对的基板表面上形成P漏极层。通过扩散在P型漏极层中形成N +第二源极层，以限定第二沟道区。第二栅电极绝缘地覆盖第二沟道区，从而提供电压控制关断控制晶体管。 MOSFET的漏电极导通P型漏极和第二源极。当关断控制晶体管导通以关断MOSFET时，暂时形成“短路阳极结构”，其中N型基极短路到漏极，由此情况下，累积在N型的载流子有助于在晶体管关断时加速载流子的散射。

96. 发明授权

US4894088A Pellet for fabricating metal matrix composite and method of preparing the pellet 失效
标题翻译：制备金属基复合材料的颗粒及其制备方法
公开(公告)号：US4894088A
公开(公告)日：1990-01-16
申请号：US133434
申请日：1987-12-15
申请人： Yoshihiro Yamaguchi , Hiroyuki Murata , Shunichi Mizukami , Kenichiro Ohuchi , Hiroyuki Morimoto , Jun Hirose
发明人： Yoshihiro Yamaguchi , Hiroyuki Murata , Shunichi Mizukami , Kenichiro Ohuchi , Hiroyuki Morimoto , Jun Hirose
IPC分类号： B22F1/00 , C22C47/14
CPC分类号： C22C47/14 , B22F1/0003 , B22F1/0059 , B22F1/0096
摘要： A pellet for fabricating a metal matrix composite is made of a mixture of a matrix member of a metal powder and at least one reinforcement selected from whiskers, short fibers and suitable particles, the reinforcement being uniformly distributed in a matrix of the metal powder and said mixture being kept in a shape with a binder, wherein said pellet has a surface layer of dried and rigid portion of said mixture which is rigid enough to keep its shape under an external pressure applied thereto. The pellet is formed from a flat cake of the mixture separated from a slurry consisting of a solution medium and the mixture dispersed therein uniformly. Alternatively, the pellet is formed from the mixture in a dried condition with a granulation binder diluted with a solution medium.
摘要翻译：用于制造金属基质复合材料的颗粒由金属粉末的基质构件和选自晶须，短纤维和合适颗粒的至少一种增强材料的混合物制成，所述增强材料均匀地分布在金属粉末和所述混合物保持为具有粘合剂的形状，其中所述颗粒具有所述混合物的干燥和刚性部分的表面层，所述表面层刚性足以使其形状保持在施加到其上的外部压力下。颗粒由与由溶液介质组成的浆料分离的混合物的平饼形成，并且混合物均匀分散。或者，在干燥状态下用混合物用溶液介质稀释的造粒粘合剂形成颗粒。

97. 发明授权

US4719531A Overcurrent protective circuit for modulated-conductivity type MOSFET 失效
标题翻译：用于调制导电型MOSFET的过电流保护电路
公开(公告)号：US4719531A
公开(公告)日：1988-01-12
申请号：US863515
申请日：1986-05-15
申请人： Chihiro Okado , Yoshihiro Yamaguchi , Akio Nakagawa
发明人： Chihiro Okado , Yoshihiro Yamaguchi , Akio Nakagawa
IPC分类号： H02H3/38 , H03K17/08 , H03K17/0812 , H03K17/082 , H03K17/567 , H02H3/24
CPC分类号： H03K17/567 , H03K17/08128 , H03K17/0828 , H01L2924/0002
摘要： An overcurrent protective circuit for a modulated conductivity type MOSFET, i.e., a BIFET, which has a voltage detection circuit for detecting a voltage between the drain and source of the BIFET and a main switching circuit for lowering a voltage between the gate ad source of the BIFET and preventing the failure of the BIFET and delay of turn-on of the BIFET according to the output of the voltage detection circuit. The protective circuit produces a constant time delay before the main switching circuit becomes turned on during the initial turn-on period of the BIFET upon application of an ON-gate signal to the gate of the BIFET. The protection circuit thereby prevents, during the initial turn period of the BIFET, a situation where the main switching circuit is turned on but the BIFET is not turned on. The protective circuit further assures that after detection of an overvoltage across the source and drain of the BIFET as may be caused by a load failure, the BIFET gate is maintained at such a low voltage to assure at most a small current conduction through the BIFET even if a ringing voltage occurs across the BIFET.
摘要翻译：用于调制导电型MOSFET的过电流保护电路，即BIFET，其具有用于检测BIFET的漏极和源极之间的电压的电压检测电路和用于降低BIFET的栅极和源极之间的电压的主开关电路 BIFET，根据电压检测电路的输出，防止BIFET的故障和BIFET的导通延迟。在BIFET的初始接通周期中，当主开关电路在向BIFET的栅极施加导通栅极信号时，保护电路产生恒定的时间延迟。因此，保护电路在BIFET的初始转弯期间防止主开关电路接通但BIFET未导通的情况。保护电路进一步确保在BIFET的源极和漏极两端检测到负载故障可能引起的过电压之后，BIFET栅极保持在这样的低电压，以确保至少通过BIFET的小电流传导，甚至如果BIFET发生振铃电压。

98. 发明授权

US4398406A Method for producing cold rolled titanium strips 失效
标题翻译：生产冷轧钛带的方法
公开(公告)号：US4398406A
公开(公告)日：1983-08-16
申请号：US264405
申请日：1981-05-18
申请人： Masahito Fukuda , Akiyoshi Tanabe , Yasuo Moriguchi , Nobuyuki Nagai , Kunio Tsuji , Yoshihiro Yamaguchi , Tomiharu Matsushita , Atsuo Mizuta
发明人： Masahito Fukuda , Akiyoshi Tanabe , Yasuo Moriguchi , Nobuyuki Nagai , Kunio Tsuji , Yoshihiro Yamaguchi , Tomiharu Matsushita , Atsuo Mizuta
IPC分类号： C22F1/16 , B21B1/22 , B21B3/00 , C22F1/18 , D01H7/32 , B21B27/10 , B21B45/02
CPC分类号： B21B3/00 , Y10S72/70
摘要： A method for producing cold rolled titanium strips having good surface quality. The cold rolling of a titanium strip is carried out under the conditions represented by the following formula:X.ltoreq.(48673/Y.sup.1.3283)where X is an average grain size (.mu.m) of the pre-cold rolled titanium strip and Y is a diameter (mm) of the roll for the cold rolling.
摘要翻译：一种生产具有良好表面质量的冷轧钛带的方法。钛条的冷轧是在下列条件下进行的：X <=（48673 / Y1.3283）其中X是预冷轧钛带的平均晶粒尺寸（μm）， Y是用于冷轧的辊的直径（mm）。

99. 发明授权

US3946584A Hydrostatic extrusion method and apparatus 失效
标题翻译：静压挤出法和设备
公开(公告)号：US3946584A
公开(公告)日：1976-03-30
申请号：US460172
申请日：1974-04-11
申请人： Tatsuo Yamasaki , Hideaki Ide , Yoshihiro Yamaguchi , Tomiharu Matsushita , Yuuzi Nakahara
发明人： Tatsuo Yamasaki , Hideaki Ide , Yoshihiro Yamaguchi , Tomiharu Matsushita , Yuuzi Nakahara
IPC分类号： B21C23/00 , B21J5/04
CPC分类号： B21C23/007
摘要： A hydrostatic extrusion method and apparatus for the extrusion of tubes is disclosed wherein the simplified structure of the nose or tip portion of the billet and the cooperating surfaces of the die defining the die cavity and those of the mandrel facilitate an improved initial sealing among the associated surfaces of the die, billet and mandrel. Such an initial sealing is effected between such interfaces of the members and billet at a point which is located substantially rearwardly from the position at which the actual extrusion to the final tubular configuration occurs between the bearing portion of the die and the cooperating sizing portion of the mandrel. Such structure and method permits the extrusion of tubes having walls of asymmetric or non-circular configurations in cross section, even those of complex configurations. In order to further enhance the efficacies of the present invention, the mandrel is provided with a head portion which may be replaced, or exchanged as desired, and a position-aligning member is associated with the mandrel in order to maintain the proper orientation of the mandrel relative to the die. The mandrel may also have a specifically designed configuration in order to provide the inner surface of the tube extruded with a gloss finish.
摘要翻译：公开了用于挤出管的静压挤出方法和装置，其中坯料的鼻部或尖端部分的简化结构以及限定模腔的模具的配合表面和心轴的配合表面有助于改善相关联的模具，坯料和心轴的表面。这样的初始密封在部件和坯料的这种界面之间进行，该位置从位于模具的支承部分与模具的配合尺寸部分之间发生实际挤压到最终管状结构的位置的位置基本上向后心轴。这种结构和方法允许在横截面中挤出具有不对称或非圆形构型的壁，甚至是复杂构型的管。为了进一步提高本发明的功效，心轴设置有可根据需要更换或更换的头部，并且位置对准构件与心轴相关联，以便保持正确的取向心轴相对于模具。心轴也可以具有专门设计的构造，以便提供管道的内表面，其具有光泽度。

100. 发明申请

US20150091406A1 PERMANENT MAGNET MOTOR 审中-公开
标题翻译：永磁电机
公开(公告)号：US20150091406A1
公开(公告)日：2015-04-02
申请号：US14388612
申请日：2012-03-30
申请人： Fumio Tajima , Yoshihiro Yamaguchi , Hiroshi Nagase , Masataka Yahara , Yukinari Fujisawa
发明人： Fumio Tajima , Yoshihiro Yamaguchi , Hiroshi Nagase , Masataka Yahara , Yukinari Fujisawa
IPC分类号： H02K1/27
CPC分类号： H02K1/2773 , H02K1/2766 , H02K21/16 , H02K2213/03
摘要： A permanent magnet motor includes a P-pole-implanted permanent magnet rotator containing a ferrite magnet in a laminated silicon steel sheet, wherein, at one pole, a U-shaped permanent magnet comprising three parts, and, at the outer periphery of the U-shaped magnet, one outer-periphery permanent magnet disposed longitudinally in the peripheral direction are provided to generate permanent magnet torque. At one pole, the permanent magnet rotator generates reluctance torque using two salient poles formed between the U-shaped permanent magnet and the outer-periphery permanent magnet. One central salient pole is formed between the adjacent poles. A stator comprises an M-phase stator winding that is a distributed winding, and a stator core having Ns slots. The ratio of Ns/P/M is a common fraction. When the width of the center salient pole is set to τcp and the slot pitch of the stator core is set to τs, τcp is smaller than τs.
摘要翻译：一种永磁电动机包括：在层叠硅钢板中含有铁氧体磁体的P极注入型永久磁铁转子，其中，在一极处包括三部分的U形永久磁铁，并且在U的外周为了产生永久磁铁转矩，设置有沿圆周方向纵向配置的一个外周永久磁铁。在一极处，永久磁铁转子使用形成在U形永磁体和外周永磁体之间的两个凸极产生磁阻转矩。在相邻的极之间形成一个中心凸极。定子包括作为分布绕组的M相定子绕组和具有Ns个槽的定子铁芯。 Ns / P / M的比例是常见的分数。当中心凸极的宽度设定为τcp，定子铁芯的槽间距设定为τs时，τcp小于τs。

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