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91. 发明授权

US06977801B2 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer 失效
标题翻译：具有交换耦合结构的磁阻器件在被钉扎层中具有半金属铁磁Heusler合金
公开(公告)号：US06977801B2
公开(公告)日：2005-12-20
申请号：US10374819
申请日：2003-02-24
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01R33/09 , G11B5/00 , G11B5/012 , G11B5/39 , G11B5/455 , G11B5/66 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/455 , G11B5/66 , G11B2005/001
摘要： A magnetoresistive device of the type with a pinned ferromagnetic layer and a free ferromagnetic layer separated by a nonmagnetic spacer layer has an exchange-coupled antiferromagnetic/ferromagnetic structure that uses a half-metallic ferromagnetic Heusler alloy with its near 100% spin polarization as the pinned ferromagnetic layer. The exchange-coupled structure includes an intermediate ferromagnetic layer between the AF layer and the pinned half-metallic ferromagnetic Heusler alloy layer, which results in exchange biasing. Magnetoresistive devices that can incorporate the exchange-coupled structure include current-in-the-plane (CIP) read heads and current-perpendicular-to-the-plane (CPP) magnetic tunnel junctions and read heads. The exchange-coupled structure may be located either below or above the nonmagnetic spacer layer in the magnetoresistive device.
摘要翻译：具有钉扎铁磁层和由非磁性间隔层隔开的自由铁磁层的类型的磁阻器件具有交换耦合反铁磁/铁磁结构，其使用具有近100％自旋极化的半金属铁磁Heusler合金作为固定铁磁层。交换耦合结构包括在AF层和被钉扎的半金属铁磁Heusler合金层之间的中间铁磁层，这导致交换偏置。可并入交换耦合结构的磁阻器件包括电流平面（CIP）读头和电流垂直于平面（CPP）磁隧道结和读头。交换耦合结构可以位于磁阻器件中的非磁性间隔层的下方或上方。

92. 发明申请

US20050174701A1 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current 失效
标题翻译：电流垂直于平面的磁阻传感器，具有由感应电流产生的涡流磁畴的自由层
公开(公告)号：US20050174701A1
公开(公告)日：2005-08-11
申请号：US10776484
申请日：2004-02-10
申请人： Prakash Kasiraj , Stefan Maat
发明人： Prakash Kasiraj , Stefan Maat
IPC分类号： G11B5/39 , G01R33/09 , G11B5/127 , G11B5/33 , H01F10/06 , H01F41/14 , H01L43/08 , H01L43/12
CPC分类号： G11B5/39 , G11B5/1278
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has additional layers for stabilizing the free layer against sense-current-generated magnetic fields. A ferromagnetic stabilizing layer is spaced from the free layer by a spacer layer and is exchange coupled with a second antiferromagnetic layer, the first antiferromagnetic layer being the conventional one for pinning the pinned layer in the CPP sensor. The stabilizing layer is in a vortex or other non-longitudinal magnetization pattern that is fixed by exchange coupling with the second antiferromagnetic layer. The stabilizing layer is also ferromagnetically coupled to the free layer across the spacer layer so that in the absence of both a sense current and an external magnetic field, the free and stabilization layers have similarly shaped vortex or other non-longitudinal magnetization patterns. The sense current generates a vortex magnetic field in the free layer opposite to the fixed vortex magnetization pattern in the stabilizing layer and essentially erases the effect of the vortex magnetization pattern in the free layer.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有用于使自由层稳定于感测电流产生的磁场的附加层。铁磁稳定层通过间隔层与自由层间隔开并与第二反铁磁层交换耦合，第一反铁磁层是用于固定CPP传感器中被钉扎层的常规的。稳定层是通过与第二反铁磁层的交换耦合固定的涡流或其它非纵向磁化模式。稳定层还通过间隔层铁磁耦合到自由层，使得在不存在感测电流和外部磁场的情况下，自由和稳定层具有类似形状的涡流或其它非纵向磁化模式。感应电流在自由层中产生与稳定层中的固定涡流磁化模式相反的涡流磁场，并且基本上消除了自由层中的涡流磁化模式的影响。

93. 发明申请

US20050174691A1 Use of iridium coupling layer in AP-tab magnetic head 有权
标题翻译：在AP-tab磁头中使用铱耦合层
公开(公告)号：US20050174691A1
公开(公告)日：2005-08-11
申请号：US10777830
申请日：2004-02-11
申请人： Hardayal Gill , Stefan Maat
发明人： Hardayal Gill , Stefan Maat
IPC分类号： G11B5/39 , G11B5/82
CPC分类号： G11B5/3932 , Y10T428/1143 , Y10T428/1193
摘要： A magnetic head that uses a thick AP coupling layer in an AP-tab structure. The head includes a free layer having an active area and tab regions on opposite sides of the active area. An antiparallel (AP) coupling layer is formed above the free layer. In one embodiment, the AP coupling layer has a thickness of 15 Å or more. In another embodiment, the AP coupling layer is formed of Ir, and preferably has a thickness of 15 Å or more. A bias layer is formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.
摘要翻译：一种磁头，其使用AP接头结构中的厚AP耦合层。头部包括在活动区域的相对侧上具有活动区域和突片区域的自由层。在自由层上方形成反平行（AP）耦合层。在一个实施例中，AP耦合层具有15或更大的厚度。在另一实施例中，AP耦合层由Ir形成，优选地具有15或更大的厚度。在自由层的每个突片部分上形成偏置层，自由层的突片区域的磁矩与反射层的磁矩反平行地固定。

94. 发明授权

US08385025B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer 有权
标题翻译：电流垂直于平面（CPP）磁阻（MR）传感器，具有改进的用于硬偏置层的种子层结构
公开(公告)号：US08385025B2
公开(公告)日：2013-02-26
申请号：US12969466
申请日：2010-12-15
申请人： Stefan Maat , Alexander M. Zeltser
发明人： Stefan Maat , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.
摘要翻译：电流垂直于平面（CPP）磁阻（MR）传感器具有用于铁磁硬（高矫顽力）偏置层的改进的种子层结构，其用于纵向偏置传感器的自由铁磁层。种子层结构是由钽（Ta）的第一种子层，与Ta层接触并与Ta层接触的钛（Ti）和Ti氧化物中的一种或两种的第二晶种层组成的三层，以及第三种子层钨（W）与第二种子层接触并接触。

95. 发明授权

US08320078B1 Perpendicular magnetic recording write head with antiparallel-coupled laminated main pole having a tapered trailing edge 有权
标题翻译：具有反并联耦合层叠主极的垂直磁记录头具有锥形后缘
公开(公告)号：US08320078B1
公开(公告)日：2012-11-27
申请号：US13408213
申请日：2012-02-29
申请人： Alexander M. Zeltser , Stefan Maat , Wen-Chien David Hsiao
发明人： Alexander M. Zeltser , Stefan Maat , Wen-Chien David Hsiao
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/147 , G11B5/3116 , G11B5/3146
摘要： A perpendicular magnetic recording write head has an improved antiparallel-coupled laminated main pole (MP) with a tapered trailing edge. The laminated MP has three ferromagnetic layers and two non-magnetic antiparallel-coupling (APC) layers. A first ferromagnetic layer (FM1) has a thickness T1 and a planar end face at the air-bearing surface (ABS). A second ferromagnetic layer (FM2) has a total thickness T2 and includes a first portion with a thickness T4 that has an end face coplanar with the end face of FM1 and a second portion with a tapered end face. A first APC layer separates FM1 and FM2. A third ferromagnetic layer (FM3) has a thickness T3 and a tapered end face that is coplanar with the tapered end face of FM2. A second APC layer separates FM2 and FM3. The net flux is minimized at both the ABS and at MP cross-sections recessed from the ABS.
摘要翻译：垂直磁记录写头具有改进的具有锥形后缘的反并联耦合层叠主极（MP）。层压MP具有三个铁磁层和两个非磁性反平行耦合（APC）层。第一铁磁层（FM1）具有厚度T1和空气轴承表面（ABS）处的平坦端面。第二铁磁层（FM2）具有总厚度T2，并且包括具有与FM1的端面共面的端面的厚度T4的第一部分和具有锥形端面的第二部分。第一APC层分离FM1和FM2。第三铁磁层（FM3）具有与FM2的锥形端面共面的厚度T3和锥形端面。第二个APC层分离FM2和FM3。在ABS和从ABS嵌入的MP截面处，净通量都被最小化。

96. 发明授权

US08218270B1 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved hard magnet biasing structure 有权
标题翻译：具有改进的硬磁体偏置结构的电流垂直平面（CPP）磁阻（MR）传感器
公开(公告)号：US08218270B1
公开(公告)日：2012-07-10
申请号：US13077815
申请日：2011-03-31
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/098 , H01L43/08 , H01L43/10
摘要： A hard magnet biasing structure for a CPP-GMR or CPP-TMR read head for a magnetic recording disk drive is located between the two sensor shields and abutting the side edges of the sensor free layer. An insulating layer is located between the biasing structure and the lower shield and the side edges of the free layer. The biasing structure includes a seed layer of either Ir or Ru, a layer of ferromagnetic chemically-ordered FePt alloy hard bias layer on the seed layer, and a Ru or Ru/Ir capping layer on the FePt alloy hard bias layer. The FePt alloy has a face-centered-tetragonal structure with its c-axis generally in the plane of the layer. The relatively thin seed layer and capping layer allow the biasing structure to be made very thin while still permitting the FePt alloy hard bias layer to have high coercivity (Hc), a high remanent magnetization-thickness product (Mrt) and a high squareness (S=Mrt/Ms).
摘要翻译：用于磁记录盘驱动器的CPP-GMR或CPP-TMR读取头的硬磁体偏置结构位于两个传感器屏蔽之间并邻接传感器自由层的侧边缘。绝缘层位于偏置结构和下屏蔽之间以及自由层的侧边缘之间。偏置结构包括Ir或Ru的种子层，种子层上的铁磁化学有序FePt合金硬偏置层的层，以及FePt合金硬偏压层上的Ru或Ru / Ir覆盖层。 FePt合金具有面向中心的四边形结构，其c轴通常在层的平面中。相对薄的种子层和覆盖层允许偏置结构非常薄，同时仍允许FePt合金硬偏置层具有高矫顽力（Hc），高剩余磁化厚度乘积（Mrt）和高矩形度（S = Mrt / Ms）。

97. 发明授权

US08139321B2 Perpendicular magnetic recording write head with improved laminated main pole 有权
标题翻译：垂直磁记录头与改进的层叠主极
公开(公告)号：US08139321B2
公开(公告)日：2012-03-20
申请号：US12759508
申请日：2010-04-13
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/31
CPC分类号： G11B5/147 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： A perpendicular magnetic recording write head has an improved antiferromagnetically-coupled laminated main pole (MP) formed on a substrate. The MP has two ferromagnetic multilayers, each comprising at least one FeCo/NiFe/FeCo ferromagnetic trilayer, antiferromagnetically coupled across an antiferromagnetically coupling (AFC) film consisting essentially of ruthenium (Ru). The MP has a NiFe layer directly above the AFC film, on the side of the AFC film opposite the side facing the substrate, and in contact with the Ru AFC film and the lower FeCo layer of the upper multilayer. There is no NiFe layer directly below the Ru AFC film so the side of the AFC film facing the substrate is in direct contact with the upper FeCo layer of the lower multilayer.
摘要翻译：垂直磁记录写头具有形成在基板上的改进的反铁磁耦合叠层主极（MP）。 MP具有两个铁磁多层，每层包含至少一个FeCo / NiFe / FeCo铁磁性三层膜，反向铁磁耦合在基本上由钌（Ru）组成的反铁磁耦合（AFC）膜上。 MP具有在AFC膜正上方的NiFe层，在与基板相对的一侧的AFC膜侧，与Ru AFC膜和上部多层的下部FeCo层接触。在Ru AFC膜的正下方没有NiFe层，因此面向衬底的AFC膜的侧面与下部多层的上部FeCo层直接接触。

98. 发明授权

US08085490B2 Slider fly-height control in a hard disk drive 有权
标题翻译：滑块飞行高度控制在硬盘驱动器
公开(公告)号：US08085490B2
公开(公告)日：2011-12-27
申请号：US12646848
申请日：2009-12-23
申请人： Luiz M. Franca-Neto , Bernhard E. Knigge , Stefan Maat
发明人： Luiz M. Franca-Neto , Bernhard E. Knigge , Stefan Maat
IPC分类号： G11B21/02
CPC分类号： G11B5/6029
摘要： In fly-height control system, a slider comprises a spin torque oscillator that is configured for generating an RF carrier signal which is out-of-band of a frequency band of read data, write data, and control signals in a hard disk drive.
摘要翻译：在飞行高度控制系统中，滑块包括自旋扭矩振荡器，其被配置为产生在硬盘驱动器中的读取数据，写入数据和控制信号的频带的带外的RF载波信号。

99. 发明授权

US08014109B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon 有权
标题翻译：电流垂直于平面（CPP）磁阻传感器，包含硅的反平行钉扎层
公开(公告)号：US08014109B2
公开(公告)日：2011-09-06
申请号：US11867063
申请日：2007-10-04
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.
摘要翻译：电流垂直平面（CPP）自旋阀（SV）磁阻传感器使用反平行（AP）钉扎结构，并且在AP钉扎结构的参考层中具有包含Co，Fe和Si的铁磁合金并且可选地在CPP-SV传感器的自由层中。参考层或AP2层是不含Si且与AP钉扎结构的反向平行耦合（APC）层接触的第一AP2-1子层的多层，以及含有Si的第二AP2-2子层与CPP-SV传感器的间隔层接触。含Si的合金基本上可以由下式（Co x Fe（100-x））（100-y）Si y的仅Co，Fe和Si组成，其中下标表示原子百分数，x在约45和55之间，y 在大约20到30之间。

100. 发明授权

US08004374B2 Increased anisotropy induced by direct ion etch for telecommunications/electronics devices 有权
标题翻译：通过电子/电子设备的直接离子蚀刻引起的各向异性增加
公开(公告)号：US08004374B2
公开(公告)日：2011-08-23
申请号：US11845239
申请日：2007-08-27
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
IPC分类号： H03H7/01 , H01P1/20
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49075
摘要： A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.
摘要翻译：一种微波带阻滤波器，其具有在电介质材料上形成的磁条。磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。或者，各向异性表面纹理可以形成在下层和磁条本身上。该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。

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