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91. 发明授权

US08415707B2 Group III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件
公开(公告)号：US08415707B2
公开(公告)日：2013-04-09
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区域具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

92. 发明授权

US08361885B2 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove 失效
标题翻译： III族氮化物半导体激光器件，III族氮化物半导体激光器件的制造方法以及由划刻槽形成估计损伤的方法
公开(公告)号：US08361885B2
公开(公告)日：2013-01-29
申请号：US13300220
申请日：2011-11-18
申请人： Yusuke Yoshizumi , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
发明人： Yusuke Yoshizumi , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/3202 , B82Y20/00 , G01N21/62 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/20 , H01S5/2009 , H01S5/34333
摘要： A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：制造III族氮化物半导体激光器件的方法包括：制备包括六方晶III-III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括半导体区域和所述基板，其中所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上刻划基板产品的第一表面以形成第一和第二划线槽; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

93. 发明授权

US08357946B2 Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件，外延衬底和用于制造氮化物半导体发光器件的方法
公开(公告)号：US08357946B2
公开(公告)日：2013-01-22
申请号：US13189194
申请日：2011-07-22
申请人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
发明人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
IPC分类号： H01L27/15
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0
摘要翻译：提供了一种氮化物半导体发光器件，其包括具有半极性表面的GaN支撑基底上方的发光层，并且允许抑制由于失配位错引起的发光效率的降低。氮化物半导体发光器件11具有由六方晶系氮化镓构成的支撑基体13，包含InX1AlY1Ga1-X1-Y1N（0

94. 发明申请

US20120214268A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120214268A1
公开(公告)日：2012-08-23
申请号：US13404310
申请日：2012-02-24
申请人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L33/02
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域来进行基板产品的分解，以形成另一基板产品和激光条。

95. 发明授权

US08228963B2 Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer 失效
标题翻译：氮化镓系半导体光学元件，氮化镓系半导体光学元件的制造方法以及外延片
公开(公告)号：US08228963B2
公开(公告)日：2012-07-24
申请号：US12715860
申请日：2010-03-02
申请人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
发明人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
IPC分类号： H01S5/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.
摘要翻译：提供一种氮化镓系半导体光学元件，其包括显示低压电效应和高结晶质量的含铟氮化镓系半导体层。氮化镓系半导体光学元件11a包括GaN支撑基底13，GaN基半导体区域15以及阱层19.初级表面13a从与从一个晶体的方向延伸的参考轴正交的表面倾斜 m轴的a轴和另一个晶轴的GaN的a轴。倾角AOFF为0.05度以上至小于15度。角度AOFF等于由矢量VM和矢量VN定义的角度。主表面的倾角由典型的m面SM和m轴矢量VM表示。 GaN基半导体区域15设置在主表面13a上。在有源层17的阱层19中，阱层19的m面和a面都从主面13a的法线轴AN倾斜。阱层19的铟含量为0.1以上。

96. 发明申请

US20120100654A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120100654A1
公开(公告)日：2012-04-26
申请号：US13289507
申请日：2011-11-04
申请人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/3202 , H01S2301/14
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有六边形III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括形成在所述半极性主表面上的衬底和半导体区域; 在六边形III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

97. 发明授权

US08148716B2 Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体光学器件，外延衬底，以及制造III族氮化物半导体发光器件的方法
公开(公告)号：US08148716B2
公开(公告)日：2012-04-03
申请号：US12837904
申请日：2010-07-16
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S2302/00
摘要： A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary surface of the substrate; and an active layer between the first group-III nitride semiconductor region and the second group-III nitride semiconductor region. The primary surface of the substrate tilts at a tilt angle in the range of 63 degrees to smaller than 80 degrees toward the m-axis of the group III nitride semiconductor from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor. The first group-III nitride semiconductor region, the active layer, and the second group-III nitride semiconductor region are arranged in the direction of the normal axis to the primary surface of the substrate. The active layer is configured to produce light having a wavelength in the range of 580 nm to 800 nm. The active layer includes an epitaxial semiconductor layer comprising a gallium nitride based semiconductor containing indium as a group III element. The epitaxial semiconductor layer has an indium content ranging from 0.35 to 0.65. The c-axis of the gallium nitride based semiconductor tilts from the normal axis. The reference axis is oriented in the direction of either the axis [0001] or [000−1] of the group III nitride semiconductor.
摘要翻译： III族氮化物半导体光学器件包括：包含III族氮化物半导体的衬底; 在所述基板的主表面上的第一III族氮化物半导体区域; 在所述基板的主表面上的第二III族氮化物半导体区域; 以及在所述第一III族氮化物半导体区域和所述第二III族氮化物半导体区域之间的有源层。基板的主表面从垂直于沿着该组的c轴延伸的基准轴的平面向第III族氮化物半导体的m轴倾斜63度至小于80度的范围内的倾斜角度 III族氮化物半导体。第一III族氮化物半导体区域，有源层和第二III族氮化物半导体区域沿着与基板的主表面的法线方向排列。有源层被配置为产生波长在580nm至800nm范围内的光。有源层包括包含含有铟作为III族元素的氮化镓基半导体的外延半导体层。外延半导体层的铟含量为0.35〜0.65。氮化镓基半导体的c轴从法线倾斜。参考轴在III族氮化物半导体的[0001]或[000-1]轴的方向上取向。

98. 发明申请

US20110121265A1 GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译： III类氮化物半导体光学器件
公开(公告)号：US20110121265A1
公开(公告)日：2011-05-26
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

99. 发明授权

US07873088B2 Group III nitride semiconductor element and epitaxial wafer 有权
标题翻译： III族氮化物半导体元件和外延晶片
公开(公告)号：US07873088B2
公开(公告)日：2011-01-18
申请号：US12779769
申请日：2010-05-13
申请人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
发明人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01S5/00
CPC分类号： H01L21/0242 , B82Y20/00 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.
摘要翻译：发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角“A”为0.05度以上且2度以下。 GaN支撑基座的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角“B”为0.05度以上且2度以下。相对于GaN支撑基体的c面，倾斜角“A”和“B”形成在彼此相反的各个方向上。

100. 发明授权

US07667298B2 Oxygen-doped n-type gallium nitride freestanding single crystal substrate 有权
标题翻译：氧掺杂n型氮化镓独立单晶衬底
公开(公告)号：US07667298B2
公开(公告)日：2010-02-23
申请号：US12292534
申请日：2008-11-20
申请人： Kensaku Motoki , Masaki Ueno
发明人： Kensaku Motoki , Masaki Ueno
IPC分类号： H01L29/207 , H01L21/205
CPC分类号： C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , C30B29/60 , C30B33/00 , H01L21/02389 , H01L21/02395 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L29/207
摘要： Oxygen is doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases to the seed crystal, growing a non-C-plane gallium nitride crystal on the seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing crystal. Otherwise, oxygen is doped into the crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases to the C-plane seed crystal or the foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the crystal and allowing oxygen to infiltrate via the non-C-plane facets to the crystal.
摘要翻译：通过制备非C面氮化镓晶种，向晶种供应材料气体，在晶种上生长非C面氮化镓晶体并允许氧经由非C平面到生长晶体。否则，通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到晶体中，将材料气体供应到C面晶种或外来晶种，生长出一个刻面C 在晶种上具有非C面的平面的平面氮化镓晶体，保持晶体上的刻面，并允许氧经由非C面刻面渗入晶体。

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