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91. 发明授权

US08130247B2 Image forming apparatus having first and second frames and a connecting member coupled thereto for facilitating multiple stages of movement 有权
标题翻译：具有第一和第二框架的图像形成装置和连接到其上的便于多个移动阶段的连接构件
公开(公告)号：US08130247B2
公开(公告)日：2012-03-06
申请号：US13095439
申请日：2011-04-27
申请人： Masahiro Fukuda
发明人： Masahiro Fukuda
IPC分类号： B41J2/385
CPC分类号： H04N1/00543 , H04N1/00551 , H04N1/00554 , H04N2201/0082
摘要： An image recording apparatus includes an image forming section, a first frame for supporting the imager forming section, a second frame for supporting the first frame loosely, and a supporting section disposed on an apparatus body for supporting the second frame in a rotatable manner, wherein the first frame moves in association with a rotation of the second frame.
摘要翻译：图像记录设备包括图像形成部分，用于支撑成像器形成部分的第一框架，松散地支撑第一框架的第二框架和设置在可旋转的方式支撑第二框架的设备主体上的支撑部分，其中第一帧与第二帧的旋转相关联地移动。

92. 发明申请

US20120009750A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120009750A1
公开(公告)日：2012-01-12
申请号：US13240303
申请日：2011-09-22
申请人： Yosuke Shimamune , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
发明人： Yosuke Shimamune , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.
摘要翻译：在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。在第二SiGe混晶层上形成第三p型SiGe混晶层。从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

93. 发明申请

US20110296425A1 Management apparatus, management system, and recording medium for recording management program 有权
标题翻译：管理装置，管理系统和记录管理程序的记录介质
公开(公告)号：US20110296425A1
公开(公告)日：2011-12-01
申请号：US13064486
申请日：2011-03-28
申请人： Masahiro Fukuda , Jun Yoshii
发明人： Masahiro Fukuda , Jun Yoshii
IPC分类号： G06F9/46
CPC分类号： G06F9/4881
摘要： A management apparatus includes a job definition information storage section for storing, at each period, a job definition file including execution characteristics indicating the start condition of each job in the execution schedule, the estimated execution time of the job, the state of the job, and a restriction at the time of setting the start schedule of the job; an exclusion information storage section for storing exclusion definition information indicating the jobs to be executed exclusively from each other; a reset job specifying section for acquiring a first job definition file of a schedule to be executed and a second job definition file of an executed schedule, then extracting, as a reset job, an abnormally terminated job from the second job definition file, and extracting a job using the reset job and the issue message of the reset job as start conditions, to store the extracted jobs in a related job set table; an execution possible time zone calculating section for searching, as an execution possible time zone, a time zone enabling execution of the job stored in the related job set table, from the first job definition file based on the second job definition file and the exclusion definition information; a start schedule adjusting section for setting the start schedule of the job stored in the related job set table based on the execution possible time zone; and a start schedule time setting section for setting the start time of the job set in the first job definition file, based on the start schedule of the job stored in the related job set table.
摘要翻译：管理装置包括作业定义信息存储部，其在各周期中，存储作业定义文件，该作业定义文件包括表示执行时间表中的各作业的开始状态的执行特性，作业的估计执行时间，作业的状态，以及在设定作业的开始时间表时的限制; 排除信息存储部分，用于存储指示彼此专门执行的作业的排除定义信息; 复位作业指定部，其用于获取要执行的进度的第一作业定义文件和执行的进度的第二作业定义文件，然后从所述第二作业定义文件中提取异常终止的作业作为复位作业，并且提取使用重置作业的作业和重新启动作业的发出消息作为起始条件，将提取的作业存储在相关作业集表中; 执行可能时区计算部分，用于根据第二作业定义文件和排除定义，从第一作业定义文件中，作为执行可能的时区，搜索能够执行存储在相关作业集表中的作业的时区信息; 开始进度调整部，其基于所述执行可能时间段来设定存储在所述相关作业集表中的作业的开始时间表; 以及开始进度时间设定部，其基于存储在相关作业集表中的作业的开始时间表来设定第一作业定义文件中的作业集的开始时间。

94. 发明授权

US08001983B2 Cleaning apparatus, coating and developing apparatus, and cleaning method 有权
标题翻译：清洗装置，涂装和显影装置以及清洗方法
公开(公告)号：US08001983B2
公开(公告)日：2011-08-23
申请号：US12716981
申请日：2010-03-03
申请人： Masahiro Fukuda , Taro Yamamoto
发明人： Masahiro Fukuda , Taro Yamamoto
IPC分类号： B08B3/04 , B08B11/02
CPC分类号： H01L21/67051 , H01L21/68742
摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.
摘要翻译：通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

95. 发明授权

US07860431B2 Image forming apparatus having a single device for detecting when covers of the apparatus are all closed 有权
标题翻译：具有用于检测装置的盖子的单个装置的图像形成装置全部关闭
公开(公告)号：US07860431B2
公开(公告)日：2010-12-28
申请号：US12591034
申请日：2009-11-05
申请人： Makoto Kitamura , Masahiro Fukuda
发明人： Makoto Kitamura , Masahiro Fukuda
IPC分类号： G03G15/00
CPC分类号： G03G15/50 , B41J29/13 , G03G21/1628 , G03G2221/1687
摘要： An image forming apparatus employs a device that detects the opening and closing of covers. Two covers are pivotally mounted to a body of the image forming apparatus, each of the two covers being movable either to its opening position to open with respect to the image forming apparatus or to its closing position to close with respect to the image forming apparatus. A movable member is positioned at a first position when both the two covers are at their opening positions. A micro switch detects whether the two covers are closed or opened with respect to the image forming apparatus. When one of the two covers has moved to its closing position causing the movable member to move to a second position and the other of the two covers is at its closing position, the detector detects that the two covers are closed.
摘要翻译：图像形成装置采用检测盖的打开和关闭的装置。两个盖可枢转地安装在图像形成装置的主体上，两个盖中的每一个可移动到其打开位置，以相对于图像形成装置打开或者关闭位置，以相对于图像形成装置关闭。当两个盖都处于其打开位置时，可移动部件位于第一位置。微型开关检测两个盖是否相对于图像形成装置关闭或打开。当两个盖中的一个已经移动到其关闭位置，导致可动构件移动到第二位置，并且两个盖中的另一个处于其关闭位置时，检测器检测到两个盖关闭。

96. 发明申请

US20100210083A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100210083A1
公开(公告)日：2010-08-19
申请号：US12690484
申请日：2010-01-20
申请人： Masahiro Fukuda , Yosuke Shimamune , Yuka Kase
发明人： Masahiro Fukuda , Yosuke Shimamune , Yuka Kase
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823412 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.
摘要翻译：一种制造半导体器件的方法包括在形成于第一有源区和第二有源区的栅电极上形成第一盖膜，在第一有源区上蚀刻第一覆盖膜，在形成于栅电极的栅电极上形成第二帽膜第一有源区和第二有源区，在第一有源区上蚀刻第二覆盖膜，使用栅电极蚀刻第一有源区，以在第一有源区中形成凹部，并将半导体材料埋入凹部。

97. 发明授权

US07712475B2 Cleaning apparatus, coating and developing apparatus, and cleaning method 失效
标题翻译：清洗装置，涂装和显影装置以及清洗方法
公开(公告)号：US07712475B2
公开(公告)日：2010-05-11
申请号：US11345529
申请日：2006-02-02
申请人： Masahiro Fukuda , Taro Yamamoto
发明人： Masahiro Fukuda , Taro Yamamoto
IPC分类号： B08B3/04 , B05C5/00 , B05C5/02 , B05C3/02
CPC分类号： H01L21/67051 , H01L21/68742
摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.
摘要翻译：通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

98. 发明申请

US20100105184A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100105184A1
公开(公告)日：2010-04-29
申请号：US12572702
申请日：2009-10-02
申请人： Masahiro Fukuda , Yosuke Shimamune
发明人： Masahiro Fukuda , Yosuke Shimamune
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/66772 , H01L29/7833
摘要： A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成栅极绝缘膜和栅电极，通过干蚀刻在栅电极两侧的第一半导体衬底中形成第一凹槽，通过去除底部和第一凹部的侧壁，并且在第二凹部中形成半导体层。

99. 发明申请

US20100068344A1 BEVERAGE PACKED IN CONTAINER 审中-公开
标题翻译：饮料包装在集装箱中
公开(公告)号：US20100068344A1
公开(公告)日：2010-03-18
申请号：US12447664
申请日：2007-06-15
申请人： Masahiro Fukuda , Hirokazu Takahashi , Ryo Kusaka , Eri Itaya
发明人： Masahiro Fukuda , Hirokazu Takahashi , Ryo Kusaka , Eri Itaya
IPC分类号： A23F3/40 , B65D85/72
CPC分类号： A23L2/60 , A23F3/163 , A23L2/52 , A23L27/30 , A23L27/31 , A23L27/34 , A23L27/86
摘要： To reduce the bitterness of a packaged beverage which contains a high concentration of non-polymer catechins, without deteriorating the flavor of the beverage, provided is a packaged beverage including 0.05 to 0.5% by mass of (A) non-polymer catechins and (B) a sweetening agent selected from the following sweetening agents (B1), (B2), (B3), and (B4): (B1) 0.0001 to 0.5% by mass of glycyrrhizin; (B2) 0.00001 to 0.005% by mass of thaumatin; (B3) 0.01 to 5% by mass of (b31) sorbitol and 0.001 to 5% by mass of (b32) a sweetening agent other than sorbitol, in which a ratio of (b32)/(b31) (mass ratio) is 0.01 to 100; and (B4) 0.01 to 5% by mass of (b41) erythritol and 0.01 to 5% by mass of (b42) one or more kinds selected from glucose, fructose, a glucose-fructose syrup, and a fructose-glucose syrup.
摘要翻译：为了降低包含高浓度非聚合型儿茶素类的包装饮料的苦味，不会降低饮料的风味，所提供的包含0.05〜0.5质量％的（A）非聚合型儿茶素类和（B ）选自以下甜味剂（B1），（B2），（B3）和（B4）的甜味剂：（B1）0.0001至0.5质量％的甘草甜素; （B2）0.00001〜0.005质量％的马来酸酐; （B3）0.01〜5质量％的（b31）山梨糖醇和0.001〜5质量％的（b32）山梨糖醇以外的甜味剂（b32）/（b31）（质量比）为0.01 到100; 和（B4）选自葡萄糖，果糖，葡萄糖 - 果糖糖浆和果糖 - 葡萄糖浆中的（b41）赤藓糖醇0.01〜5质量％和（b42）0.01〜5质量％的一种或多种。

100. 发明申请

US20100015774A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100015774A1
公开(公告)日：2010-01-21
申请号：US12564313
申请日：2009-09-22
申请人： Yosuke SHIMAMUNE , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
发明人： Yosuke SHIMAMUNE , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.
摘要翻译：在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。在第二SiGe混晶层上形成第三p型SiGe混晶层。从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

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