专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US08370026B2 Activation device for occupant protection apparatus and method for activating the occupant protection apparatus 失效
标题翻译：用于乘员保护装置的激活装置和用于激活乘员保护装置的方法
公开(公告)号：US08370026B2
公开(公告)日：2013-02-05
申请号：US12660823
申请日：2010-03-04
申请人： Toshihide Kondoh , Takashi Noguchi
发明人： Toshihide Kondoh , Takashi Noguchi
IPC分类号： B60R22/00 , B60R21/00 , B60D1/28 , B60K28/00 , B60K28/10 , B60K28/12 , B60K28/14 , B60L3/00 , B60T7/12 , B60T7/22 , B62D49/08 , B60Q1/00 , E05F15/00 , G05D1/00 , G05D3/00 , G06F7/00 , G06F17/00
CPC分类号： B60R21/0132 , B60R21/01332 , B60R21/0136 , B60R2021/0004 , B60R2021/0011 , B60R2021/01322
摘要： An activation device is configured to activate a protection apparatus for protecting an occupant. The activation device includes a front collision detection unit and a rear collision detection unit. The front collision detection unit outputs a front-collision-state activation signal to a front-collision protection apparatus so as to activate the front-collision protection apparatus when detecting front collision of the vehicle. The rear collision detection unit outputs a rear-collision-state activation signal to a rear-collision protection apparatus so as to activate the rear-collision protection apparatus when detecting rear collision of the vehicle. The rear collision detection unit prohibits output of the rear-collision-state activation signal to the rear-collision protection apparatus for a first period when the front collision detection unit detects front collision of the vehicle.
摘要翻译：激活装置被配置为激活用于保护乘员的保护装置。激活装置包括前碰撞检测单元和后碰撞检测单元。前碰撞检测单元向前碰撞保护装置输出前碰撞状态激活信号，以便在检测到车辆的前方碰撞时启动前防撞保护装置。后方碰撞检测单元向后方碰撞保护装置输出后方碰撞状态激活信号，以便在检测到车辆的后方碰撞时起动后方碰撞保护装置。当前方碰撞检测部检测到车辆的前方碰撞时，后方碰撞检测部在第一期间禁止向后方碰撞保护装置输出后方碰撞状态激活信号。

92. 发明申请

US20120144009A1 SAMPLE-TEST-DEVICE MANAGEMENT SERVER, SAMPLE TEST DEVICE, SAMPLE TEST SYSTEM, AND SAMPLE TEST METHOD 有权
标题翻译：样本测试设备管理服务器，样品测试设备，样品测试系统和样品测试方法
公开(公告)号：US20120144009A1
公开(公告)日：2012-06-07
申请号：US13322773
申请日：2010-04-28
申请人： Takashi Noguchi , Yoshiyuki Tajima , Koji Kamoshida , Naomi Ishii
发明人： Takashi Noguchi , Yoshiyuki Tajima , Koji Kamoshida , Naomi Ishii
IPC分类号： G06F15/173
CPC分类号： G01N35/02 , G01N35/00 , G01N35/00732 , G01N35/0092 , G01N35/0095
摘要： There is provided a sample test system which can execute a prior process for a specific sample in consideration of priorities and process progresses of a plurality of samples processed in the sample test system. The sample test system includes a sample-test-device management server 101, when a specific-sample prior process request containing a specific sample ID and a prior-process-request level identification code is accepted from a sample access system 108, which selects a specific-sample prior-process-policy determination table based on the prior-process-request level identification code attached to the specific-sample prior process request, which determines a specific-sample prior process policy based on the specific-sample prior-process-policy determination table and a process state of the sample, which specifies a sample ID regarding the specific sample ID, and which transmits the specific-sample prior process policy to a sample-test-device group 119.
摘要翻译：提供了一种样本测试系统，其可以考虑到在样本测试系统中处理的多个样本的优先级和处理进程，对特定样本执行先前的过程。样本测试系统包括样本测试设备管理服务器101，当从样本访问系统108接收到包含特定样本ID和先前处理请求级别识别码的特定样本先验处理请求时，该样本测试设备管理服务器101选择基于与特定样本先验过程请求相关联的先前过程请求级别标识代码的特定样本先前过程策略确定表，其基于特定样本先前处理过程策略确定特定样本先验过程策略，策略确定表和样本的处理状态，其指定关于特定样本ID的样本ID，并将特定样本先验处理策略发送到样本测试装置组119。

93. 发明申请

US20110098173A1 Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof 有权
标题翻译：铁电薄膜形成用组合物，形成铁电薄膜的方法，以及通过该方法形成的铁电薄膜
公开(公告)号：US20110098173A1
公开(公告)日：2011-04-28
申请号：US12929056
申请日：2010-12-27
申请人： Jun Fujii , Hideaki Sakurai , Takashi Noguchi , Noboyuki Soyama
发明人： Jun Fujii , Hideaki Sakurai , Takashi Noguchi , Noboyuki Soyama
IPC分类号： C04B35/491 , H01B3/20 , B05D5/12
CPC分类号： H01L41/1876 , B05D3/02 , B05D3/0209 , B05D3/04 , B05D3/0406 , B05D3/0413 , B05D3/0453 , B05D3/0473 , C01G25/006 , C01P2002/50 , C01P2006/40 , C04B24/40 , C04B24/42 , C04B35/491 , C04B35/493 , C04B35/624 , C04B35/632 , C04B35/6325 , C04B2111/92 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3293 , C04B2235/3298 , C04B2235/3418 , C04B2235/44 , C04B2235/441 , C04B2235/443 , C04B2235/447 , C04B2235/449 , C04B2235/6585 , C23C18/1204 , C23C18/1225 , C23C18/1279 , C23C30/00 , H01B3/14 , H01G4/1245 , H01G4/206 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/108 , H01L27/11502 , H01L28/55 , H01L41/18 , H01L41/1875 , H01L41/318
摘要： Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1−z))O3 [wherein 0.9
摘要翻译：公开了用于形成选自PLZT，PZT和PT的一种材料的铁电薄膜的铁电薄膜形成用组合物。铁电薄膜形成用组合物是由通式（1）表示的复合金属氧化物（A）：（PbxLay）（ZrzTi（Zr x Ti y））的混合物形成的混合复合金属氧化物的薄膜的液体组合物，（B）或由通式（2）表示的羧酸（B），其中0.9

94. 发明授权

US07923316B2 Method of forming a polysilicon film and method of manufacturing a thin film transistor including a polysilicon film 有权
标题翻译：形成多晶硅膜的方法和制造包括多晶硅膜的薄膜晶体管的方法
公开(公告)号：US07923316B2
公开(公告)日：2011-04-12
申请号：US11808521
申请日：2007-06-11
申请人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
发明人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L29/78603 , H01L29/78606
摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
摘要翻译：在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜，与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜膜和多晶硅膜上的栅极堆叠。第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

95. 发明授权

US07859054B2 Poly-Si thin film transistor and organic light-emitting display having the same 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US07859054B2
公开(公告)日：2010-12-28
申请号：US11561572
申请日：2006-11-20
申请人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

96. 发明授权

US07851280B2 Organic electroluminescent display and method of fabricating the same 有权
公开(公告)号：US07851280B2
公开(公告)日：2010-12-14
申请号：US12730344
申请日：2010-03-24
申请人： Ji-sim Jung , Jany-yeon Kwon , Jong-man Kim , Kyung-bae Park , Takashi Noguchi
发明人： Ji-sim Jung , Jany-yeon Kwon , Jong-man Kim , Kyung-bae Park , Takashi Noguchi
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , H01L27/1255 , H01L27/3265
摘要： An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

97. 发明申请

US20100200834A1 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
标题翻译：结晶纳米线基板及其制造方法以及使用其制造薄膜晶体管的方法
公开(公告)号：US20100200834A1
公开(公告)日：2010-08-12
申请号：US12659776
申请日：2010-03-22
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/775 , H01L29/04 , H01L29/02 , H01L27/12
CPC分类号： H01L29/0673 , B82Y10/00 , H01L29/0665 , H01L29/66772 , H01L29/78654 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/932 , Y10S977/943
摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法。制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

98. 外观设计

USD615007S1 Radiator grill for automobile 有权
标题翻译：汽车散热器格栅
公开(公告)号：USD615007S1
公开(公告)日：2010-05-04
申请号：US29316234
申请日：2009-09-03
申请人： Gou Kasai , Takashi Noguchi , Matthew Weaver
设计人： Gou Kasai , Takashi Noguchi , Matthew Weaver

99. 发明授权

US07511381B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07511381B2
公开(公告)日：2009-03-31
申请号：US11248620
申请日：2005-10-13
申请人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极的单晶硅层。

100. 发明授权

US07479667B2 Semiconductor device with modified mobility and thin film transistor having the same 失效
标题翻译：具有改性迁移率的半导体器件和具有该迁移率的薄膜晶体管
公开(公告)号：US07479667B2
公开(公告)日：2009-01-20
申请号：US11022756
申请日：2004-12-28
申请人： Jang-yeon Kwon , Takashi Noguchi , Young-soo Park , Do-young Kim
发明人： Jang-yeon Kwon , Takashi Noguchi , Young-soo Park , Do-young Kim
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/1029 , H01L29/6675 , H01L29/78663 , H01L29/78672
摘要： Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
摘要翻译：提供了包括被定义为高和低迁移率区域的有源区域和具有半导体器件的薄膜晶体管的半导体器件。有源面积的迁移率可以降低到足以满足半导体器件要求的水平。有源区的迁移率的降低有助于减少半导体器件之间的迁移率偏差。结果，可以大大提高采用大规模半导体器件的平板显示器的质量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式