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91. 发明授权

US06317642B1 Apparatus and methods for uniform scan dispensing of spin-on materials 有权
标题翻译：用于均匀扫描分配旋涂材料的装置和方法
公开(公告)号：US06317642B1
公开(公告)日：2001-11-13
申请号：US09191438
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Christof Streck , John Pellerin , Richard J. Huang
发明人： Lu You , Dawn Hopper , Christof Streck , John Pellerin , Richard J. Huang
IPC分类号： G06F1900
CPC分类号： H01L21/6715 , B05D1/005
摘要： This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The semiconductor thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了用于半导体薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动的分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液沉积在晶片上的图案。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的半导体薄膜可用于制造包括层间电介质材料的半导体器件。

92. 发明授权

US06235453B1 Low-k photoresist removal process 有权
标题翻译：低k光刻胶去除工艺
公开(公告)号：US06235453B1
公开(公告)日：2001-05-22
申请号：US09349055
申请日：1999-07-07
申请人： Lu You , Steven C. Avanzino , Jacques Bertrand , Richard J. Huang
发明人： Lu You , Steven C. Avanzino , Jacques Bertrand , Richard J. Huang
IPC分类号： G03F726
CPC分类号： G03F7/427 , G03F7/42 , H01L21/02052 , H01L21/31138
摘要： An integrated circuit and a method of removing photoresist is described. The process described uses a low oxygen gas or non-oxygen gas plasma that removes the photoresist and provides a protective surface layer over the low-k dielectric material. The low-k dielectric material is part of a dielectric stack. After exposure to the gas plasmas the integrated circuit is subjected to solvent.
摘要翻译：描述了集成电路和去除光致抗蚀剂的方法。所描述的方法使用低氧气体或非氧气体等离子体，其去除光致抗蚀剂并在低k电介质材料上提供保护性表面层。低k电介质材料是电介质叠层的一部分。暴露于气体等离子体后，集成电路经受溶剂。

93. 发明授权

US06225240B1 Rapid acceleration methods for global planarization of spin-on films 有权
标题翻译：用于旋涂膜全局平面化的快速加速方法
公开(公告)号：US06225240B1
公开(公告)日：2001-05-01
申请号：US09191101
申请日：1998-11-12
申请人： Lu You , Dawn Hopper , Richard J. Huang
发明人： Lu You , Dawn Hopper , Richard J. Huang
IPC分类号： H01L2131
CPC分类号： H01L21/02134 , B05D1/005 , H01L21/02282 , H01L21/31051 , H01L21/312 , H01L21/3124 , H01L21/3127
摘要： This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of desposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films. The methods of this invention enable the production of spin-on thin films, which have more even film thickness and uniformity. The semiconductor thin films produced by the methods of this invention are useful for the manufacture of semiconductor devices comprising interlevel dielectric materials.
摘要翻译：本发明描述了用于半导体薄膜的旋涂沉积的改进的装置和方法。改进的装置提供沉积室内的受控温度，压力和气体组成。改进的方法包括通过可移动分配装置分配含有薄膜前体的溶液，以及仔细调节前体溶液在晶片上的排列方式。本发明还包括仔细调节沉积变量，包括分配时间，晶片转速，停止时间和晶片旋转速率。在一个实施方案中，前体溶液从晶片的外边缘向中心分配。在替代实施例中，处理器调节分配臂和前驱泵的运动，以提供均匀分配的前体溶液层。本发明还描述了用于蒸发溶剂和固化薄膜的改进方法。本发明的方法能够生产具有更均匀的膜厚度和均匀性的旋涂薄膜。通过本发明的方法生产的半导体薄膜可用于制造包括层间电介质材料的半导体器件。

94. 发明授权

US6147000A Method for forming low dielectric passivation of copper interconnects 有权
标题翻译：形成铜互连的低介电钝化的方法
公开(公告)号：US6147000A
公开(公告)日：2000-11-14
申请号：US225546
申请日：1999-01-05
申请人： Lu You , Shekhar Pramanick , Takeshi Nogami
发明人： Lu You , Shekhar Pramanick , Takeshi Nogami
IPC分类号： H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76886 , H01L21/76849 , H01L21/76858
摘要： A Cu interconnect member is passivated by diffusing Sn, Ta or Cr atoms into its upper surface to form an intermetallic layer. Embodiments include depositing Cu by electroplating or electroless plating to fill a damascene opening in a dielectric layer, CMP, depositing a sacrificial layer of Sn, Ta or Cr on the planarized surface, heating to diffuse Sn, Ta or Cr into the upper surface of the deposited Cu to form a passivating intermetallic alloy layer, and removing any remaining sacrificial layer by CMP or etching.
摘要翻译：通过将Sn，Ta或Cr原子扩散到其上表面来形成金属间化合物来钝化Cu互连构件。实施例包括通过电镀或化学电镀沉积Cu以填充电介质层中的镶嵌开口，CMP，在平坦化表面上沉积Sn，Ta或Cr的牺牲层，加热以将Sn，Ta或Cr扩散到沉积Cu以形成钝化金属间合金层，并通过CMP或蚀刻去除任何残留的牺牲层。

95. 发明授权

US6100181A Low dielectric constant coating of conductive material in a damascene process for semiconductors 有权
标题翻译：半导体镶嵌工艺中导电材料的低介电常数涂层
公开(公告)号：US6100181A
公开(公告)日：2000-08-08
申请号：US305906
申请日：1999-05-05
申请人： Lu You , John A. Iacoponi
发明人： Lu You , John A. Iacoponi
IPC分类号： H01L21/768 , H01L23/58
CPC分类号： H01L21/76834
摘要： A method for manufacturing an integrated circuit using damascene processes is provided in which planar surfaces subjected to chemical-mechanical polishing are protected by a protective low dielectric constant coating. The coatings are of organic silicon materials which are spun on and baked in preparation of the deposition of subsequent dielectric layers.
摘要翻译：提供一种使用镶嵌工艺制造集成电路的方法，其中经受化学机械抛光的平面被保护的低介电常数涂层所保护。涂层是有机硅材料，其在制备随后的电介质层的沉积中被纺丝并烘烤。

96. 发明授权

US6066574A Hot plate cure process for BCB low k interlevel dielectric 有权
标题翻译： BCB低k层间电介质的热板固化工艺
公开(公告)号：US6066574A
公开(公告)日：2000-05-23
申请号：US187429
申请日：1998-11-06
申请人： Lu You , Dawn Hopper , Christof Streck
发明人： Lu You , Dawn Hopper , Christof Streck
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/768 , H01L21/31
CPC分类号： H01L21/31058 , H01L21/312
摘要： A dielectric layer comprising a benzocyclobutene (BCB)-based low dielectric constant (low k) material is formed on a surface of a semiconductor wafer substrate by (a) spin coating a layer of a fluid material comprising BCB in a liquid solvent or dispersant vehicle on the substrate; (b) baking the coated substrate at a first temperature and for a first time interval to remove the solvent; (c) curing the baked coating by heating at a second temperature higher than the first temperature, and for a second time interval; and (d) subjecting the substrate with cured coating thereon to a cool-down treatment at a third temperature and for a third time interval. Embodiments include performing steps (a)-(d) consecutively and in the same apparatus. Other embodiments include processing in an "on track" type automated semiconductor processing apparatus.
摘要翻译：通过以下步骤，在半导体晶片衬底的表面上形成包含基于苯并环丁烯（BCB）的低介电常数（低k）材料的电介质层：（a）在液体溶剂或分散剂载体中旋涂包含BCB的流体材料层在基材上（b）在第一温度和第一时间间隔烘烤涂覆的基材以除去溶剂; （c）通过在高于第一温度的第二温度下加热固化烘烤的涂层，并且持续第二时间间隔; 和（d）在其上固化的涂层对基板进行第三温度和第三时间间隔的冷却处理。实施例包括在相同的装置中连续执行步骤（a） - （d）。其他实施例包括在“轨道”型自动半导体处理装置中的处理。

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