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91. 发明授权

US06217655B1 Stand-off pad for supporting a wafer on a substrate support chuck 失效
标题翻译：用于在基板支撑卡盘上支撑晶片的支撑垫
公开(公告)号：US06217655B1
公开(公告)日：2001-04-17
申请号：US08791941
申请日：1997-01-31
申请人： Ananda H. Kumar , Shamouil Shamouilian , Hyman J. Levinstein , Vijay Parkhe
发明人： Ananda H. Kumar , Shamouil Shamouilian , Hyman J. Levinstein , Vijay Parkhe
IPC分类号： B05C1300
CPC分类号： H01L21/6833 , H01L21/6875
摘要： A stand-off pad, and method of fabricating the same, for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer stand-off pad is fabricated of a polymeric material, such as polyimide, which is disposed upon the support surface of the chuck. The stand-off pad maintains a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the stand-off pad. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing and the magnitude of the chucking voltage is maintained between the workpiece and the chuck.
摘要翻译：支撑垫及其制造方法，用于以与工件支撑卡盘间隔开的关系支撑工件。更具体地说，晶片支座由诸如聚酰亚胺的聚合材料制成，其设置在卡盘的支撑表面上。支座将保持晶片或其它工件与卡盘的支撑表面间隔开。晶片的下表面和卡盘之间的距离由支座的厚度限定。该距离应大于可能位于卡盘表面上的污染物颗粒的预期直径。以这种方式，污染物颗粒在处理期间不粘附到晶片的下侧，并且夹持电压的幅度保持在工件和卡盘之间。

92. 发明授权

US5514451A Conductive via fill inks for ceramic multilayer circuit boards on support substrates 失效
标题翻译：用于支撑衬底上陶瓷多层电路板的导电填充油墨
公开(公告)号：US5514451A
公开(公告)日：1996-05-07
申请号：US379265
申请日：1995-01-27
申请人： Ananda H. Kumar , Barry J. Thaler , Ashok N. Prabhu , Ellen S. Tormey
发明人： Ananda H. Kumar , Barry J. Thaler , Ashok N. Prabhu , Ellen S. Tormey
IPC分类号： H05K1/09 , B32B18/00 , C09D5/24 , C09D11/00 , C09D11/02 , H01B1/16 , H01L23/498 , H05K3/46 , B32B9/00
CPC分类号： C09D11/52 , H01L23/49883 , H01L2924/0002 , H01L2924/09701 , Y10S428/901 , Y10T428/24917 , Y10T428/24926
摘要： Conductive via fill inks for green tapes to be stacked and bonded to a support substrate, the glass used for the green tape having a firing temperature from 850.degree.-950.degree. C., wherein the glass used for the via fill ink has a glass transition temperature that is higher than that of the glass used to make the green tape, preferably does not crystallize at the maximum firing temperature of the green tape and comprises from 30-75 percent by volume of the glass-conductive metal powder mixture of the via fill ink. These conductive via fill inks will not shrink until the green tape shrinkage has commenced during firing of the composite circuit board and they will flow slightly during firing, forming good bonds to the glass in the walls of the vias, thereby ensuring good integrity of the vias and good connections to the circuitry on the fired ceramic multilayer circuit board.
摘要翻译：导电通孔填充油墨，用于生料带堆放并结合到支撑基底上，用于生坯带的烧结温度为850-950℃的玻璃，其中用于通孔填充油墨的玻璃具有玻璃化转变比用于制造生胶带的玻璃的温度更高的温度优选在生带的最高焙烧温度下不结晶，并且包含30-75体积％的通孔填充物的玻璃 - 导电金属粉末混合物墨水。这些导电通孔填充墨水将不会收缩，直到复合电路板的烧制期间开始生胶带收缩，并且它们在烧制过程中会稍微流动，从而形成与通孔壁中的玻璃的良好粘结，从而确保通孔的良好完整性并且与烧制的陶瓷多层电路板上的电路的良好连接。

93. 发明授权

US5215610A Method for fabricating superconductor packages 失效
标题翻译：制造超导体封装的方法
公开(公告)号：US5215610A
公开(公告)日：1993-06-01
申请号：US680227
申请日：1991-04-04
申请人： Nunzio DiPaolo , Ananda H. Kumar , Lovell B. Wiggins
发明人： Nunzio DiPaolo , Ananda H. Kumar , Lovell B. Wiggins
IPC分类号： C03C17/06 , C03C27/04 , C04B37/02 , H01B1/02 , H01L21/48 , H01L23/498 , H05K1/09 , H05K3/46
CPC分类号： H05K1/092 , C03C17/06 , C03C27/046 , H01B1/026 , H01L21/4867 , H01L23/49883 , C03C2217/253 , C03C2217/27 , C03C2218/17 , H01L2924/0002 , H01L2924/09701
摘要： A method for promoting adhesion of cofired copper-based metallurgy and glass ceramic dielectric materials. The method includes the step of adding powder of an alloying metal to the copper based metallurgy prior to firing. A paste which exhibits superior adhesion to glass ceramics includes an organic carrier, copper powder, and an alloying metal, which may be a non-copper metal powder or a copper-metal alloy. It is preferred that of the metal in the paste, the copper should make up 80-99 weight percent and the alloying metal should make up 1-20 weight percent.

94. 发明授权

US4704304A Method for repair of opens in thin film lines on a substrate 失效
标题翻译：在基板上的薄膜线中修复开口的方法
公开(公告)号：US4704304A
公开(公告)日：1987-11-03
申请号：US923242
申请日：1986-10-27
申请人： Albert Amendola, deceased , Ananda H. Kumar , Thomas R. Vance
发明人： Albert Amendola, deceased , Ananda H. Kumar , Thomas R. Vance
IPC分类号： H01L21/3205 , H05K3/04 , H05K3/20 , H05K3/22 , H05K3/32 , H05K3/40 , B05D3/12
CPC分类号： H05K3/4015 , H05K3/225 , H05K2201/0317 , H05K2201/1028 , H05K2203/0156 , H05K2203/025 , H05K2203/0278 , H05K2203/0285 , H05K2203/0528 , H05K2203/0743 , H05K2203/1105 , H05K2203/173 , H05K3/04 , H05K3/20 , H05K3/328
摘要： Disclosed is a method for repairing opens in thin film conductor lines on a substrate, preferably a multi-layered ceramic substrate. An unpatterned repair metal film is placed over a general area of open defects in conductive lines on a substrate. Preferably, this metal is placed over the conductive lines and opens therein by decal transfer. The assembly is then heated to cause diffusion bonding between the repair metal and conductive lines, but not between the repair metal and substrate. After diffusion bonding, the structure has metal bridges formed across any open defects covered by the repair film and also between adjacent conductive lines. The area of repair is then subjected to ultrasonic energy in a liquid ambient for a time at least long enough to remove metal bridges between adjacent conductive lines, but less than that required to remove repair metal bridges over the opens in the conductive lines. The resultant structure has metal bridges spanning opens in the conductive lines, and no metal bridges between adjacent conductive lines.
摘要翻译：公开了一种在基板上，优选多层陶瓷基板上的薄膜导体线中修复开口的方法。将未图案化的修复金属膜放置在基板上的导电线中的开放缺陷的一般区域上。优选地，该金属被放置在导电线之上，并通过贴花转移而在其中打开。然后将组件加热以在修复金属和导电线之间引起扩散接合，而不是在修复金属和衬底之间。在扩散接合之后，该结构具有跨越由修复膜覆盖的任何开放缺陷以及相邻导电线之间形成的金属桥。然后将修复区域在液体环境中经受至少足够长的时间的超声波能量以去除相邻导电线之间的金属桥，但是小于在导电线路中的开口上移除修复金属桥所需的量。所得到的结构具有在导线中跨越开口的金属桥，并且相邻导线之间没有金属桥。

95. 发明授权

US4582722A Diffusion isolation layer for maskless cladding process 失效
标题翻译：用于无掩模包层工艺的扩散隔离层
公开(公告)号：US4582722A
公开(公告)日：1986-04-15
申请号：US666954
申请日：1984-10-30
申请人： Lester W. Herron , Ananda H. Kumar , Robert W. Nufer
发明人： Lester W. Herron , Ananda H. Kumar , Robert W. Nufer
IPC分类号： H01L23/12 , C23C10/04 , H01L21/388 , H01L21/48 , H05K1/03 , H05K1/09 , H05K3/24 , B05D3/12 , B05D5/12 , C23C14/00
CPC分类号： H01L21/4846 , C23C10/04 , H05K3/246 , H01L2924/0002 , H05K1/0306 , H05K1/092 , H05K2201/0317 , H05K2203/025 , H05K2203/0743 , H05K3/048
摘要： Disclosed is a maskless metal cladding process for plating an existing metallurgical pattern by utilizing a protective layer to isolate those areas of underlying metallurgy on which additional metal plating is not desired. The layer acts as an isolation barrier to protect the underlying metallurgy from deposition and subsequent diffusion of the heavy metal (e.g., gold) overlay. The composition of the protective layer is selected as one having sufficient mechanical integrity to withstand process handling and support the gold overlay and having the thermal integrity to withstand the high temperatures reached during metal sputtering and diffusion processes. The isolation barrier layer has an organic component as a binder which thermally decomposes, either in a heating step before metal deposition or during the diffusion cycle, leaving no carbonaceous residue but leaving an inert, inorganic standoff to support the metal. After diffusion of the metal, the remaining inorganic standoff layer, overlying metal and any undiffused metal remaining on the non-patterned substrate is easily removed by a standard technique, such as ultrasonics.
摘要翻译：公开了一种无掩模金属包覆工艺，用于通过利用保护层来电镀现有的冶金图案，以隔离不期望附加金属镀覆的下方冶金的那些区域。该层用作隔离屏障，以保护底层冶金不沉积和随后扩散重金属（例如，金）覆盖层。保护层的组成选择为具有足够的机械完整性的组合物，以承受工艺处理并支撑金覆层并具有耐热金属溅射和扩散过程中达到的高温的热完整性。隔离阻挡层具有作为粘合剂的有机组分，其在金属沉积之前的加热步骤或扩散循环期间热分解，不留下含碳残留物，而留下惰性的无机支架以支撑金属。在金属扩散之后，剩余的无机隔离层，覆盖的金属和残留在非图案化衬底上的任何未扩散的金属都可以通过诸如超声波的标准技术容易地去除。

96. 发明授权

US4510000A Method for palladium activating molybdenum metallized features on a ceramic substrate 失效
标题翻译：用于在陶瓷衬底上活化钼金属化特征的钯的方法
公开(公告)号：US4510000A
公开(公告)日：1985-04-09
申请号：US556732
申请日：1983-11-30
申请人： Ananda H. Kumar , Bernard Schwartz
发明人： Ananda H. Kumar , Bernard Schwartz
IPC分类号： H05K3/46 , C04B41/45 , C04B41/52 , C04B41/81 , C04B41/89 , H01L21/48 , H05K1/02 , H05K1/03 , H05K3/24 , C04B35/00 , C04B39/00
CPC分类号： H05K3/248 , C04B41/009 , C04B41/4505 , C04B41/52 , C04B41/81 , C04B41/89 , H01L21/4857 , H05K3/207 , H05K3/4629 , Y10T29/49144 , Y10T29/49163
摘要： A molybdenum or tungsten metallurgical pattern is formed on or in a dielectric green sheet. Palladium, nickel, platinum or rhodium is coated on a layer of polyvinyl butyral which is carried on a polyester film. The metal layer of this assembly is laminated to a dielectric green sheet which carries the molybdenum or tungsten metallurgy. The polyester film is stripped off. The resulting assembly is sintered to a fired structure, whereby the polyvinyl butyral is volatilized off and the palladium, nickel, platinum or rhodium is alloyed with the molybdenum or tungsten metallurgy to provide a densified metallurgy whose surface is free of glass.
摘要翻译：钼或钨冶金图案形成在电介质生片上或其中。钯，镍，铂或铑被涂覆在承载在聚酯膜上的聚乙烯醇缩丁醛层上。该组件的金属层被层压到承载钼或钨冶金的电介质生片上。剥离聚酯薄膜。将所得的组件烧结成烧结结构，由此使聚乙烯醇缩丁醛挥发，并将钯，镍，铂或铑与钼或钨冶金合金化，以提供其表面不含玻璃的致密化冶金。

97. 发明授权

US4504322A Re-work method for removing extraneous metal from cermic substrates 失效
标题翻译：从金属陶瓷基底去除外来金属的再加工方法
公开(公告)号：US4504322A
公开(公告)日：1985-03-12
申请号：US435572
申请日：1982-10-20
申请人： Avinash S. Adwalpalker , Ananda H. Kumar , Renee L. Weisman
发明人： Avinash S. Adwalpalker , Ananda H. Kumar , Renee L. Weisman
IPC分类号： H05K3/46 , B08B3/12 , C04B41/53 , C25D5/48 , H01L21/48 , H01L23/12 , H05K1/09 , H05K3/04 , H05K3/22 , H05K3/24 , B08B7/00
CPC分类号： H05K3/246 , B08B3/12 , C04B41/53 , H01L21/4846 , H05K1/092 , H05K2203/0285 , H05K2203/1105 , H05K3/04 , Y10T29/49144 , Y10T29/49224
摘要： A re-work method for removing extraneous plated metal layer areas from the surface of a ceramic substrate containing refractory metal areas wherein the substrate is heated at a temperature for a time sufficient to strengthen the bond between the plated metal layer and the refractory metal areas while simultaneously reducing the strength of the bond between the extraneous plated metal layer overlying the ceramic and the ceramic, immersing the substrate in a liquid, and applying localized ultrasonic energy in close proximity to the extraneous metal areas to be removed.
摘要翻译：一种用于从包含难熔金属区域的陶瓷基板的表面去除外部电镀金属层区域的再加工方法，其中将基板在足以加强镀覆金属层和难熔金属区域之间的键的温度下加热，同时同时降低覆盖在陶瓷上的外部电镀金属层与陶瓷之间的结合强度，将衬底浸入液体中，并且将局部超声波能量紧邻待除去的外来金属区域。

98. 发明授权

US4501768A Thin film floating zone metal coating technique 失效
标题翻译：薄膜浮区金属涂层技术
公开(公告)号：US4501768A
公开(公告)日：1985-02-26
申请号：US359445
申请日：1982-03-18
申请人： Ananda H. Kumar
发明人： Ananda H. Kumar
IPC分类号： H01L23/12 , B23K35/00 , C04B41/51 , C04B41/88 , C23C26/02 , H01L21/48 , H05K3/04 , H05K3/14 , H05K3/24 , B05D3/02 , B05D3/12 , B05D5/00
CPC分类号： H01L21/48 , B23K35/001 , C04B41/51 , C04B41/88 , H05K3/246 , H05K1/0306 , H05K3/048 , H05K3/143 , H05K3/244
摘要： A method of coating or cladding existing metallurgical features of a dielectric substrate by sequentially blanket coating the substrate, inclusive of the metal features, with discrete levels of diverse metals forming alloy systems exhibiting a minimum in the liquidus curve, followed by heating the substrate to a temperature (T.sub.H) at or slightly above the lowest liquidus temperature in the phase diagram of the alloy system and below the melting points of the metal components. During heating to temperature, the metals interdiffuse forming a range of compositions changing with time to form liquid alloys which moves to the substrate surface where it wets and bonds to the metallic features while dewetting the bar substrate surface portions. On cooling the non-adhering portions the alloy can be suitably removed from the substrate surface, as by ultrasonic action, leaving an alloy of the metals strongly bonded only to the pre-existing metallurgical features.
摘要翻译：通过顺序地将包括金属特征在内的基片覆盖成不同金属的不同金属，形成在液相线曲线中表现出最小的合金系统，然后将基底加热到在合金系统的相图中低于或略高于最低液相温度的温度（TH），低于金属组分的熔点。在加热到温度期间，金属相互扩散形成随时间变化的组成范围，以形成液体合金，该液体合金移动到基底表面，在其上润湿并粘合到金属特征上，同时使条形基底表面部分变湿。在冷却非粘合部分时，合金可以通过超声波作用从衬底表面适当地去除，使金属的合金牢固地结合到仅存在的冶金特征上。

99. 发明授权

US4493856A Selective coating of metallurgical features of a dielectric substrate with diverse metals 失效
标题翻译：具有不同金属的电介质基底的冶金特征的选择性涂层
公开(公告)号：US4493856A
公开(公告)日：1985-01-15
申请号：US359469
申请日：1982-03-18
申请人： Ananda H. Kumar , Kris V. Srikrishnan
发明人： Ananda H. Kumar , Kris V. Srikrishnan
IPC分类号： C23C14/04 , B23K35/00 , C04B41/51 , C04B41/88 , C04B41/90 , C23C28/00 , C23F1/00 , H01L21/48 , H01L23/12 , H05K1/09 , H05K3/02 , H05K3/04 , H05K3/14 , H05K3/24 , B05D3/00 , B05D3/02 , B05D3/12 , B05D5/00
CPC分类号： H01L21/48 , B23K35/001 , C04B41/51 , C04B41/88 , H05K3/246 , H05K1/0306 , H05K3/048 , H05K3/143 , H05K3/244
摘要： A method of coating or cladding existing metallurgical features of a dielectric substrate by sequentially blanket coating the substrate with two discrete levels of diverse metals having differential in melting point and forming a continuous series of alloy solid solutions whose solidus curve lies intermediate the melting points of the two component metals, with the metal having the lower melting point disposed adjacent said substrate, followed by heating of the substrate to a temperature slightly above melting point of the lower melting metal but not exceeding the liquidus temperature of a completely homogenized alloy corresponding to amounts of the metals deposited, with cooling of the substrate to delaminate the metal coatings on the bare surface areas of said substrate, and mechanically removing said delaminated metal coatings to retain a bonded cladding comprised of said metals on said metallurgical features.
摘要翻译：一种通过用熔点不同的两种不同金属的不同金属层叠基板来涂覆或包覆电介质基板的现有冶金特征的方法，并形成连续的一系列合金固溶体，其固相线曲线位于两种组分金属，其中具有较低熔点的金属与所述衬底相邻地设置，随后将衬底加热至略低于较低熔点金属熔点的温度，但不超过完全均质化合金的液相线温度，所述金属沉积在衬底的冷却下以使所述衬底的裸露表面区域上的金属涂层分层，并机械地去除所述分层金属涂层，以将由所述金属组成的结合包层保持在所述冶金特征上。

100. 发明授权

US4340618A Process for forming refractory metal layers on ceramic substrate 失效
$Process for forming refractory metal layers on ceramic substrate$
标题翻译：在陶瓷基板上形成难熔金属层的方法
公开(公告)号：US4340618A
公开(公告)日：1982-07-20
申请号：US245762
申请日：1981-03-20
申请人： Michael A. Fury , Ananda H. Kumar
发明人： Michael A. Fury , Ananda H. Kumar
IPC分类号： H05K1/09 , B22F7/04 , C04B41/52 , C04B41/89 , H05K3/24 , H05K3/46 , H05K3/12
CPC分类号： H05K3/246 , C04B41/009 , C04B41/52 , C04B41/89 , H05K1/092 , H05K3/146 , Y10T29/49163
摘要： A process for forming a substantially glass free surface on screened refractory metallurgy areas on a ceramic substrate wherein a thin layer of Pd is deposited over the metallurgy areas and the metallurgy areas subsequently sintered causing the surface refractory metal particles to be fused into a substantially solid metallurgy layer under the catalyzing influence of the Pd.
摘要翻译：一种用于在陶瓷基板上形成基本无玻璃表面的筛选难熔冶金区域的方法，其中Pd薄层沉积在冶金区域上，冶金区域随后烧结，使表面难熔金属颗粒熔融成基本上固体的冶金层下Pd的催化作用。

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