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91. 发明授权

US08173458B2 Method for forming quantum well structure and method for manufacturing semiconductor light emitting element 有权
标题翻译：用于形成量子阱结构的方法和用于制造半导体发光元件的方法
公开(公告)号：US08173458B2
公开(公告)日：2012-05-08
申请号：US12417857
申请日：2009-04-03
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/0075 , H01L33/06
摘要： A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.
摘要翻译：提供一种用于形成能够减小阱层厚度方向的In组成的变化的量子阱结构的方法和半导体发光元件的制造方法。在通过在GaN衬底的主表面上交替生长势垒层和阱层来形成量子阱结构（有源层）的步骤中，阱层各自通过生长InGaN形成，阻挡层各自在第一温度下生长阱层各自在比第一温度低的第二温度下生长，并且当各层形成阱层时，在提供用于Ga（三甲基镓）的原料气体之前，用于In的原料气体为提供。

92. 发明授权

US08139619B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08139619B2
公开(公告)日：2012-03-20
申请号：US13209054
申请日：2011-08-12
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2201 , H01S5/3202
摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.
摘要翻译：提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

93. 发明授权

US08124430B2 Method for forming quantum well structure and method for manufacturing semiconductor light emitting element 有权
公开(公告)号：US08124430B2
公开(公告)日：2012-02-28
申请号：US12417857
申请日：2009-04-03
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01L21/00
摘要： A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.

94. 发明授权

US08107507B2 Group III nitride semiconductor element and epitaxial wafer 有权
标题翻译： III族氮化物半导体元件和外延晶片
公开(公告)号：US08107507B2
公开(公告)日：2012-01-31
申请号：US12965633
申请日：2010-12-10
申请人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
发明人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01S5/00
CPC分类号： H01L21/0242 , B82Y20/00 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.
摘要翻译：发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角“A”为0.05度以上且2度以下。 GaN支撑基座的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角“B”为0.05度以上且2度以下。相对于GaN支撑基体的c面，倾斜角“A”和“B”形成在彼此相反的各个方向上。

95. 发明授权

US08105857B2 Method of fabricating group-III nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件的制造方法
公开(公告)号：US08105857B2
公开(公告)日：2012-01-31
申请号：US12837306
申请日：2010-07-15
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L21/18
CPC分类号： H01S5/0202 , H01S5/2201 , H01S5/3202 , H01S5/32341
摘要： A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：形成具有激光结构的衬底产品; 划定衬底产品的第一表面以形成刻痕，其沿着表示六边形III族氮化物半导体的a轴的方向的参考线延伸在第一表面上，划线标记; 将所述基板产品安装在断开装置上以分别通过所述断路装置的第一和第二支撑部分支撑所述基板产品的第一和第二区域; 并且在不支撑位于第一和第二区域之间的基板产品的第三区域的情况下，在第三区域中通过压制与基板标记对准地分解基板产品，以形成另一基板产品和激光条。激光棒的第一和第二端面形成III族氮化物半导体激光器件的激光腔。

96. 发明授权

US08018029B2 Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer 有权
标题翻译：基于氮化镓的外延晶片和制造外延晶片的方法
公开(公告)号：US08018029B2
公开(公告)日：2011-09-13
申请号：US12565290
申请日：2009-09-23
申请人： Yusuke Yoshizumi , Masaki Ueno , Takao Nakamura
发明人： Yusuke Yoshizumi , Masaki Ueno , Takao Nakamura
IPC分类号： H01L29/20 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L33/16
摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface, and, an active layer provided on the semiconductor film, the active layer having a quantum well structure. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.
摘要翻译：用于氮化物发光器件的氮化镓基外延晶片包括具有主表面的氮化镓衬底，设置在主表面上的氮化镓基半导体膜，以及设置在半导体膜上的有源层，活性层层具有量子阱结构。主表面的法线和氮化镓衬底的C轴彼此形成偏离角。在从一个点延伸到另一个点通过主表面的中心点的直线上，偏角单调增加。一点和另一点位于主表面的边缘上，在线上n点定义的阱层的铟含量在从一点到另一点的方向上单调减小。在n点定义的阱层的厚度值在方向上单调增加。

97. 发明授权

US07755103B2 Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate 有权
标题翻译：氮化镓半导体衬底和氮化物半导体外延衬底
公开(公告)号：US07755103B2
公开(公告)日：2010-07-13
申请号：US11498155
申请日：2006-08-03
申请人： Masaki Ueno
发明人： Masaki Ueno
IPC分类号： H01L31/00
CPC分类号： H01L29/34 , C30B25/18 , H01L29/045 , H01L29/0657 , H01L29/2003 , H01L33/16 , Y10T83/04
摘要： A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a mirror polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.
摘要翻译：制造单晶氮化镓衬底的方法是将单晶氮化镓锭沿着预定平面切割以制造一个或多个单晶氮化镓衬底的步骤。单晶氮化镓锭通过气相外延沿预定轴线的方向生长。每个预定平面相对于预定轴线倾斜。每个基板具有镜面抛光的主表面。主表面具有第一区域和第二区域。第一区域位于衬底的边缘和距离边缘3毫米的线之间。第一个区域围绕第二个区域。垂直于主表面的轴与衬底的c轴形成偏角。偏角在主表面的第一区域中的第一位置处具有最小值。

98. 发明授权

US07543571B2 Fuel pump mounting structural body 失效
标题翻译：燃油泵安装结构体
公开(公告)号：US07543571B2
公开(公告)日：2009-06-09
申请号：US11588323
申请日：2006-10-27
申请人： Masaki Ueno , Tomoyuki Tagami
发明人： Masaki Ueno , Tomoyuki Tagami
IPC分类号： F02M37/04
CPC分类号： F02M37/103
摘要： To provide a fuel pump mounting structural body that allows a mounting space for a fuel tank and the number of manufacturing processes to be reduced. A fuel pump mounting structural body accommodates a fuel pump unit in an opening portion disposed in a fuel tank. The structural body includes a step portion disposed in the opening portion. The step portion is formed one step lower than a wall surface of the fuel tank. A lid portion of the fuel pump unit is fittingly attached to the step portion and includes a delivery port for fuel. A guide member is disposed on a peripheral edge of the opening portion. The guide member includes a removably mounted holding member. The fuel pump unit is held in position by the fuel pump mounting structural body.
摘要翻译：提供一种燃料泵安装结构体，其允许用于燃料箱的安装空间和减少制造工艺的数量。燃料泵安装结构体在设置在燃料箱中的开口部中容纳燃料泵单元。结构体包括设置在开口部分中的台阶部分。台阶部比燃料箱的壁面低一级。燃料泵单元的盖部分适合地安装在台阶部分上并且包括用于燃料的输送口。引导构件设置在开口部的周缘上。引导构件包括可拆卸地安装的保持构件。燃料泵单元通过燃料泵安装结构体保持就位。

99. 发明授权

US07363920B2 Fuel supply control system for internal combustion engine 失效
标题翻译：内燃机燃油供应控制系统
公开(公告)号：US07363920B2
公开(公告)日：2008-04-29
申请号：US11606988
申请日：2006-12-01
申请人： Masaki Ueno
发明人： Masaki Ueno
IPC分类号： F02D41/38 , F02M51/00 , G06F17/00
CPC分类号： F02D41/1402
摘要： A fuel supply control system for an internal combustion engine having at least one fuel injection valve for injecting fuel into an intake pipe or a combustion chamber of the engine. A flow rate of air supplied to the engine and an air-fuel ratio are detected. A demand fuel injection amount is set according to an operating condition of the engine. An injection amount command value of fuel injected by at least one fuel injection valve according to the demand fuel injection amount. An amount of fuel burned in the engine is calculated according to the detected intake air flow rate and air-fuel ratio. At least two correlation parameters, which indicate a relationship between the estimated burned fuel amount and the injection amount command value, are identified. The injection amount command value is then corrected according to the at least two identified correlation parameters.
摘要翻译：一种用于内燃机的燃料供应控制系统，具有至少一个用于将燃料喷射到发动机的进气管或燃烧室中的燃料喷射阀。检测供给到发动机的空气的流量和空燃比。根据发动机的运转状况设定需求燃料喷射量。根据需要燃料喷射量由至少一个燃料喷射阀喷射的燃料的喷射量指令值。根据检测到的进气量和空燃比计算发动机燃烧的燃料量。识别表示估计燃烧燃料量与喷射量指令值之间的关系的至少两个相关参数。然后根据至少两个所识别的相关参数校正喷射量指令值。

100. 发明申请

US20080067760A1 Dual-Membered Suctional Gasket 失效
标题翻译：双组份吸风垫片
公开(公告)号：US20080067760A1
公开(公告)日：2008-03-20
申请号：US11664041
申请日：2005-07-27
申请人： Yutaka Kikuchi , Hirofumi Hino , Masaki Ueno , Masaaki Yamaguchi , Yasuaki Nagai
发明人： Yutaka Kikuchi , Hirofumi Hino , Masaki Ueno , Masaaki Yamaguchi , Yasuaki Nagai
IPC分类号： F16J15/02
CPC分类号： F16J15/025 , F16J15/061 , F16J15/3236 , Y10S277/928
摘要： The invention provides a novel dual-membered suctional gasket which has a reliable function to fit and fix the gasket to an object to be sealed, and also provides an effective suction effect and air venting function. For that purpose, the gasket which has a function to prevent fluid from leaking when compressed, comprises an inner sealing member 1 and outer sealing member 2 arranged on a surface perpendicular to a compressing direction; and a plurality of connecting members 3 for connecting and fixing the inner sealing member 1 and the outer sealing member 2 together. Suction cup structures are formed, when a proper amount of air closed between the inner sealing member and the outer sealing member is vented from the inner sealing member, the outer sealing member or the both sealing members by compressing the dual-membered gasket.
摘要翻译：本发明提供了一种新颖的双元吸入垫片，其具有将垫圈装配并固定到待密封物体的可靠功能，并且还提供有效的吸入效果和排气功能。为此，具有防止流体在压缩时泄漏的功能的垫圈包括内侧密封部件1和配置在与压缩方向正交的面的外部密封部件2; 以及多个用于将内密封件1和外密封件2连接固定在一起的连接件3。当通过压缩双元件垫片从内部密封件，外部密封件或两个密封件排出内部密封件和外部密封件之间的适当数量的空气，从而形成抽吸杯结构。

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