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91. 发明授权

US08623693B2 Solar cell system manufacturing method 有权
标题翻译：太阳能电池系统制造方法
公开(公告)号：US08623693B2
公开(公告)日：2014-01-07
申请号：US13569274
申请日：2012-08-08
申请人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L31/00 , H01L31/18
CPC分类号： H01L31/18 , H01L31/035218 , H01L31/042 , H01L31/043 , H01L31/047 , H01L31/056 , Y02E10/52
摘要： A solar cell system making method includes steps of making a round P-N junction by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; cutting the round P-N junction into a plurality of arc shaped solar cell preforms; forming an arc shaped surface by stacking the plurality of arc shaped solar cell preforms along a first direction and forming an electrode layer between each adjacent two of the plurality of arc shaped solar cell preforms; and forming a first collection electrode and a second collection electrode to form an arc shaped solar cell system having a photoreceptive surface being on the arc shaped surface and being configured to receive incident light beams.
摘要翻译：太阳能电池系统制造方法包括以下步骤：通过（a）在彼此的顶部堆叠P型硅层和N型硅层来制造圆形PN结，以及（b）在接合点之间形成PN结， P型硅层和N型硅层; 将圆形P-N结切割成多个弧形太阳能电池预制件; 通过沿着第一方向堆叠所述多个弧形太阳能电池预制件并在所述多个弧形太阳能电池预制件中的每个相邻的两个之间形成电极层来形成弧形表面; 以及形成第一收集电极和第二收集电极，以形成具有在所述弧形表面上的感光表面并被配置为接收入射光束的弧形太阳能电池系统。

92. 发明授权

US08211398B2 Method for making semiconducting carbon nanotubes 有权
标题翻译：制造半导体碳纳米管的方法
公开(公告)号：US08211398B2
公开(公告)日：2012-07-03
申请号：US12952536
申请日：2010-11-23
申请人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B82Y40/00 , D01F9/12
CPC分类号： B82Y40/00 , B01J23/745 , B01J35/0013 , B01J37/08 , B82Y30/00 , C01B32/162 , C01B2202/22 , Y10S977/742 , Y10S977/842
摘要： A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.
摘要翻译：提供制造半导体碳纳米管的方法。催化剂前体设置在基板上。催化剂前体包括血液。血液中含有的有机物被除去，血液中含有的铁离子被氧化，在基底上产生离散的三氧化二铁纳米粒子。还原氧化亚铁纳米颗粒以在基底上产生分离的铁纳米颗粒。然后碳纳米管在铁纳米颗粒上生长。

93. 发明授权

US08865007B2 Method for making three-dimensional nano-structure array 有权
标题翻译：制备三维纳米结构阵列的方法
公开(公告)号：US08865007B2
公开(公告)日：2014-10-21
申请号：US13340221
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
IPC分类号： B29C59/14 , B82Y40/00 , B81C1/00
CPC分类号： B81C1/00111 , B82Y40/00 , G03F7/0002
摘要： A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.
摘要翻译：提供了制备三维纳米结构阵列的方法。该方法包括以下步骤。提供基地。掩模层位于基座上。掩模层被图案化，并且在掩模层的表面上形成许多条形突起结构，在突出结构的数量的两个相邻的突出结构中的每一个之间限定了许多以露出基部的一部分。基底的暴露部分通过狭槽被蚀刻，使得两个相邻的突出结构中的每一个开始面对面地倾斜，直到它们彼此接触以形成突出的对。去除掩模层。

94. 发明授权

US08809675B2 Solar cell system 有权
标题翻译：太阳能电池系统
公开(公告)号：US08809675B2
公开(公告)日：2014-08-19
申请号：US13572769
申请日：2012-08-13
申请人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0216 , H01L31/0687 , H01L31/0725
CPC分类号： H01L31/0512 , B82Y10/00 , H01L31/02167 , H01L31/02168 , H01L31/0224 , H01L31/022425 , H01L31/028 , H01L31/035281 , H01L31/047 , H01L31/0687 , H01L31/0725 , H01L51/0048 , H01L51/42 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02E10/549 , Y02P70/521 , Y10S977/742 , Y10S977/743
摘要： A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode, a second collecting electrode and a reflector. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along the straight line. The P-N junction cells are arranged in series along a straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a carbon nanotube array. A photoreceptive surface is parallel to the straight line. A reflector is located on an emitting surface opposite to the photoreceptive surface.
摘要翻译：太阳能电池系统包括多个P-N结电池，多个内部电极，第一集电电极，第二集尘电极和反射器。 P-N结电池的数量为M.M等于或大于2.M P-N结电池沿着直线从第一P-N结电池排列到第M个P-N结电池。 P-N结电池沿着直线串联布置。内部电极的数量为M-1。至少一个内部电极包括碳纳米管阵列。感光面平行于直线。反射器位于与感光表面相对的发射表面上。

95. 发明授权

US08796716B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08796716B2
公开(公告)日：2014-08-05
申请号：US13479233
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/005
摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极覆盖第一半导体层的整个表面。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

96. 发明授权

US08759858B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08759858B2
公开(公告)日：2014-06-24
申请号：US13479230
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/06 , H01L33/22
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。衬底包括外延生长表面和发光表面。第一半导体层，有源层和第二半导体层堆叠在外延生长表面上。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

97. 发明授权

US08603347B2 Method for forming recess defect on carbon nanotube 有权
标题翻译：在碳纳米管上形成凹陷缺陷的方法
公开(公告)号：US08603347B2
公开(公告)日：2013-12-10
申请号：US13335925
申请日：2011-12-22
申请人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B44C1/22
CPC分类号： B82Y30/00 , B81C1/00063 , B82Y40/00
摘要： A method for forming a recess defect on a carbon nanotube is introduced. The method includes the following steps. A substrate with a surface is provided. A first carbon nanotube is deposed on the surface of the substrate. A second carbon nanotube is crossed with the first carbon nanotube. The second carbon nanotube crosses the first carbon nanotube and is in contact with the first carbon nanotube. A mask is deposited on substrate, the first carbon nanotube, and the second carbon nanotube. The substrate is etched to remove the second carbon nanotube and form a recess defect on the first carbon nanotube at a crossing position.
摘要翻译：引入了在碳纳米管上形成凹陷缺陷的方法。该方法包括以下步骤。提供具有表面的基板。第一碳纳米管被放置在衬底的表面上。第二碳纳米管与第一碳纳米管交叉。第二碳纳米管与第一碳纳米管交叉并与第一碳纳米管接触。掩模沉积在基底，第一碳纳米管和第二碳纳米管上。蚀刻基板以除去第二碳纳米管，并在交叉位置在第一碳纳米管上形成凹陷缺陷。

98. 发明授权

US08501020B2 Method for making three-dimensional nano-structure array 有权
标题翻译：制备三维纳米结构阵列的方法
公开(公告)号：US08501020B2
公开(公告)日：2013-08-06
申请号：US12969998
申请日：2010-12-16
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B44C1/22 , B82Y40/00
CPC分类号： B81C1/00031
摘要： A method for making a three-dimensional nano-structure array includes following steps. First, a substrate is provided. Next, a mask is formed on the substrate. The mask is a monolayer nanosphere array or a film defining a number of holes arranged in an array. The mask is then tailored and simultaneously the substrate is etched by the mask. Lastly, the mask is removed.
摘要翻译：制造三维纳米结构阵列的方法包括以下步骤。首先，提供基板。接着，在基板上形成掩模。掩模是单层纳米球阵列或限定排列成阵列的多个孔的膜。然后调整掩模并同时通过掩模蚀刻基底。最后，去除面具。

99. 发明授权

US08487320B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08487320B2
公开(公告)日：2013-07-16
申请号：US12970234
申请日：2010-12-16
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/02 , H01L2933/0083
摘要： A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The second semiconductor layer has a plurality of three-dimensional nano-structures. Each of the plurality of three-dimensional nano-structures has a stepped structure.
摘要翻译：发光二极管包括基板，第一半导体层，有源层，第二半导体层，第一电极和第二电极。第一半导体层，有源层和第二半导体层有序堆叠在基板上。第一电极电连接到第一半导体层。第二电极电连接到第二半导体层。第二半导体层具有多个三维纳米结构。多个三维纳米结构中的每一个具有阶梯状结构。

100. 发明授权

US08360575B2 Eyeglasses and lens for same 有权
标题翻译：眼镜和镜片相同
公开(公告)号：US08360575B2
公开(公告)日：2013-01-29
申请号：US12965851
申请日：2010-12-11
申请人： Jun-Bo Feng , Qun-Qing Li , Shou-Shan Fan
发明人： Jun-Bo Feng , Qun-Qing Li , Shou-Shan Fan
IPC分类号： G02C7/10
CPC分类号： G02C7/12 , B82Y20/00 , B82Y30/00 , G02C7/108 , G02C2202/16
摘要： A lens for eyeglasses includes a substrate and at least one carbon nanotube (CNT) film including a number of CNTs. The substrate includes a surface, or defines at least one cavity. The at least one CNT film is disposed on the surface of the substrate, or embedded in the at least one cavity of the substrate such that a part of light is absorbed by the CNTs of the CNT film.
摘要翻译：用于眼镜的镜片包括基底和至少一个包含多个CNT的碳纳米管（CNT）膜。衬底包括表面，或限定至少一个空腔。所述至少一个CNT膜设置在所述基板的表面上，或者嵌入在所述基板的所述至少一个空腔中，使得一部分光被所述CNT膜的CNT吸收。

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