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91. 发明授权

US07599156B2 Magnetoresistive element having specially shaped ferromagnetic layer 有权
标题翻译：具有特殊形状的铁磁层的磁阻元件
公开(公告)号：US07599156B2
公开(公告)日：2009-10-06
申请号：US11244153
申请日：2005-10-06
申请人： Tatsuya Kishi , Masahiko Nakayama , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Tatsuya Kishi , Masahiko Nakayama , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： G11B5/33
CPC分类号： G11C11/15
摘要： A magnetoresistive element according to an example of the present invention has a stacked structure comprised first and second ferromagnetic layers and a nonmagnetic layer disposed between these ferromagnetic layers, and a planar shape of at least one of the first and second ferromagnetic layers has a shape formed by combining two or more parts each having a shape of a character C.
摘要翻译：根据本发明的实施例的磁阻元件具有包括第一和第二铁磁层和设置在这些铁磁层之间的非磁性层的堆叠结构，并且第一和第二铁磁层中的至少一个的平面形状形成通过组合两个或更多个具有字符C形状的部分。

92. 发明授权

US6056935A Iron sulfide and process for producing the same 失效
标题翻译：硫化铁及其制造方法
公开(公告)号：US6056935A
公开(公告)日：2000-05-02
申请号：US952591
申请日：1997-11-24
申请人： Tadashi Kai , Yuji Matsue , Masaaki Sakurai , Kunihiro Imada , Kenji Inokuchi
发明人： Tadashi Kai , Yuji Matsue , Masaaki Sakurai , Kunihiro Imada , Kenji Inokuchi
IPC分类号： B01J27/043 , C01G49/12 , C10G1/08
CPC分类号： B01J27/043 , C01G49/12 , C10G1/086
摘要： The invention provides an iron sulfide characterized in that it comprises FeS.sub.2, Fe.sub.1-x S, Fe.sub.3 O.sub.4 and FeSO.sub.4, and that the secondary particles thereof, have a 50% volume-cumulative particle diameter of from 20 to 300 .mu.m. The invention also provides a process for producing an iron sulfide comprising the steps of introducing (a) ferrous sulfate monohydrate having a d.sub.50 of from 20 to 300 .mu.m and (b) not less than stoichiometric amount of at least one sulfur compound selected from elemental sulfur and hydrogen sulfide into the fluidized bed of a furnace and then fluidizing, burning, and reacting the ingredients at a temperature of from 350 to less than 630.degree. C., a superficial velocity of 0.1 m/sec or higher, and a pressure of 1 atm or higher using air as a fluidizing gas.
摘要翻译： PCT No.PCT / JP96 / 01395 Sec。 371日期：1997年11月24日 102（e）日期1997年11月24日PCT提交1996年5月24日PCT公布。公开号WO96 / 37296 日期：1996年11月28日本发明提供一种硫化铁，其特征在于，其包含FeS 2，Fe 1-xS，Fe 3 O 4和FeSO 4，并且其二次粒子具有20〜300μm的体积累积粒径的50％。本发明还提供一种生产硫化铁的方法，包括以下步骤：（a）d50为20-300μm的硫酸亚铁一水合物，和（b）不少于化学计量的至少一种选自元素的硫化合物硫和硫化氢进入炉的流化床，然后在350至小于630℃，表面速度为0.1m / sec或更高的温度下流化，燃烧和反应成分，压力为 1大气压或更高，使用空气作为流化气体。

93. 发明授权

US09406871B2 Magnetoresistive element and method of manufacturing the same 有权
公开(公告)号：US09406871B2
公开(公告)日：2016-08-02
申请号：US14807267
申请日：2015-07-23
申请人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
发明人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
IPC分类号： H01L43/00 , H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12 , H01L43/10
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

94. 发明授权

US09368717B2 Magnetoresistive element and method for manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09368717B2
公开(公告)日：2016-06-14
申请号：US14200742
申请日：2014-03-07
申请人： Masaru Toko , Masahiko Nakayama , Kuniaki Sugiura , Yutaka Hashimoto , Tadashi Kai , Akiyuki Murayama , Tatsuya Kishi
发明人： Masaru Toko , Masahiko Nakayama , Kuniaki Sugiura , Yutaka Hashimoto , Tadashi Kai , Akiyuki Murayama , Tatsuya Kishi
IPC分类号： H01L27/02 , H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层。参考层包括第一区域和设置在第一区域外部以包围该第一区域的第二区域。第二区域包含包含在第一区域中的元素，而另一元素与元素不同。磁阻元件还包括存储层，以及设置在参考层和存储层之间的隧道势垒层。存储层没有另一个元素。

95. 发明授权

US08349622B2 Magneto-resistive element 有权
公开(公告)号：US08349622B2
公开(公告)日：2013-01-08
申请号：US12361575
申请日：2009-01-29
申请人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

96. 发明申请

US20130001716A1 MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20130001716A1
公开(公告)日：2013-01-03
申请号：US13425309
申请日：2012-03-20
申请人： Koji Yamakawa , Katsuaki Natori , Daisuke Ikeno , Tadashi Kai
发明人： Koji Yamakawa , Katsuaki Natori , Daisuke Ikeno , Tadashi Kai
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.
摘要翻译：根据实施例，磁阻元件包括下电极，下电极上的第一磁性层，第一磁性层上的第一扩散防止层，第一金属层上的第一界面磁性层，第一金属层上的非磁性层第一界面磁性层，非磁性层上的第二界面磁性层，第二界面磁性层上的第二扩散防止层，第二扩散防止层上的第二磁性层和第二磁性层上的上部电极层。第二界面磁性层中的晶体取向部分与另一部分的比例高于第一界面磁性层中晶体取向部分与其它部分的比例。

97. 发明申请

US20090166322A1 MAGNETO-RESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20090166322A1
公开(公告)日：2009-07-02
申请号：US12361575
申请日：2009-01-29
申请人： Sumio IKEGAWA , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio IKEGAWA , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： B44C1/22
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
摘要翻译：根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

98. 发明申请

US20070013015A1 Magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20070013015A1
公开(公告)日：2007-01-18
申请号：US11378358
申请日：2006-03-20
申请人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译：磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。参考层设置在第一表面上并具有固定的磁化方向。磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。第一突出部从第一长边突出的位置从中心向第一短边移动。第二突出部从第二长边突出的位置从中心向第二短边移动。

99. 发明申请

US20060198184A1 Magnetic memory device and write method of magnetic memory device 有权
标题翻译：磁存储器件和磁存储器件的写入方法
公开(公告)号：US20060198184A1
公开(公告)日：2006-09-07
申请号：US11255111
申请日：2005-10-21
申请人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
发明人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.
摘要翻译：一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件，具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层，第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

100. 发明授权

US07084447B2 Magnetic random access memory having magnetoresistive element 失效
标题翻译：具有磁阻元件的磁性随机存取存储器
公开(公告)号：US07084447B2
公开(公告)日：2006-08-01
申请号：US11007210
申请日：2004-12-09
申请人： Yoshiaki Fukuzumi , Tadashi Kai
发明人： Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： H01L29/72
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3272 , H01L27/222 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and an intermediate nonmagnetic layer, the recording layer comprising a first ferromagnetic layer formed on the intermediate nonmagnetic layer, a first nonmagnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a second nonmagnetic layer formed on the second ferromagnetic layer, and a third ferromagnetic layer formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer by second magnetic coupling, wherein one of a state in which the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and a state in which the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling is obtained.
摘要翻译：磁性随机存取存储器包括具有记录层，固定层和中间非磁性层的磁阻元件，所述记录层包括形成在中间非磁性层上的第一铁磁层，形成在第一铁磁层上的第一非磁性层形成在第一非磁性层上并通过第一磁耦合与第一铁磁层磁耦合的第二铁磁层，形成在第二铁磁层上的第二非磁性层和形成在第二非磁性层上的第三铁磁层，并与所述第二铁磁层通过第二磁耦合，其中所述第一磁耦合是反铁磁耦合的状态和所述第二磁耦合的状态是铁磁耦合，以及所述第一磁耦合是铁磁耦合的状态和所述第二磁耦合耦合是反铁磁耦合获得。

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