专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20100300888A1 PULSE SEQUENCE FOR PLATING ON THIN SEED LAYERS 有权
标题翻译：用于涂覆薄层层的脉冲序列
公开(公告)号：US20100300888A1
公开(公告)日：2010-12-02
申请号：US12786329
申请日：2010-05-24
申请人： Thomas A. Ponnuswamy , Bryan Pennington , Clifford Berry , Bryan L. Buckalew , Steven T. Mayer
发明人： Thomas A. Ponnuswamy , Bryan Pennington , Clifford Berry , Bryan L. Buckalew , Steven T. Mayer
IPC分类号： C25D7/12 , C25D21/12 , C25D3/38
CPC分类号： C25D7/123 , C25D3/38 , C25D5/18 , C25D17/001
摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
摘要翻译：使用电镀方案来控制金属镀在包含导电种子层的晶片上。最初，当晶片浸入电镀溶液中时，协议采用阴极保护。在某些实施例中，晶片的电流密度在浸入期间是恒定的。在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。浸没步骤之后是高电流脉冲步骤。在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。

92. 发明授权

US07690324B1 Small-volume electroless plating cell 有权
标题翻译：小容量化学镀电池
公开(公告)号：US07690324B1
公开(公告)日：2010-04-06
申请号：US11200338
申请日：2005-08-09
申请人： Jingbin Feng , Steven T. Mayer , Daniel Mark Dinneen , Edmund B. Minshall , Christopher M. Bartlett , Eric G. Webb , R. Marshall Stowell , Mark T. Winslow , Avishai Kepten , Norman D. Kaplan , Richard K. Lyons , John B. Alexy
发明人： Jingbin Feng , Steven T. Mayer , Daniel Mark Dinneen , Edmund B. Minshall , Christopher M. Bartlett , Eric G. Webb , R. Marshall Stowell , Mark T. Winslow , Avishai Kepten , Norman D. Kaplan , Richard K. Lyons , John B. Alexy
IPC分类号： B05C11/02
CPC分类号： C23C18/1619 , H01L21/288 , H01L21/6715 , H01L21/76841
摘要： During fluid treatment of a substrate surface, a carrier/wafer assembly containing a substrate wafer closes the top of a microcell container. The carrier/wafer assembly and the container walls define a thin enclosed treatment volume that is filled with treating fluid, such as electroless plating solution. The thin fluid-treatment volume typically has a volume in a range of about from 100 ml to 500 ml. Preferably a container is heated and the treating fluid is pre-heated before being injected into the container. Preferably, the chemical composition, temperature, and other properties of fluid in the thin enclosed fluid-treatment volume are dynamically variable. A rinse shield and a rinse nozzle are located above the container. A carrier/wafer assembly in a rinse position substantially closes the top of the rinse shield.
摘要翻译：在衬底表面的流体处理期间，包含衬底晶片的载体/晶片组件封闭微孔容器的顶部。载体/晶片组件和容器壁限定了用处理流体例如化学镀溶液填充的薄封闭处理体积。薄流体处理体积通常具有在约100ml至500ml范围内的体积。优选地，将容器加热并且将处理流体在被注入容器之前被预热。优选地，薄封闭流体处理体积中的流体的化学组成，温度和其它性质是动态可变的。冲洗屏和冲洗喷嘴位于容器上方。漂洗位置的载体/晶片组件基本上封闭了冲洗屏蔽的顶部。

93. 发明授权

US07682498B1 Rotationally asymmetric variable electrode correction 有权
标题翻译：旋转不对称可变电极校正
公开(公告)号：US07682498B1
公开(公告)日：2010-03-23
申请号：US11179984
申请日：2005-07-11
申请人： Steven T. Mayer , John S. Drewery
发明人： Steven T. Mayer , John S. Drewery
IPC分类号： B23H3/00 , C25D5/00 , C25D5/18 , C25D17/10 , B23H7/14 , C25D21/12
CPC分类号： B23H3/04 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12
摘要： A work piece is electroplated or electroplanarized using an azimuthally asymmetric electrode. The azimuthally asymmetric electrode is rotated with respect to the work piece (i.e., either or both of the work piece and the electrode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece. In some embodiments, the total current is distributed among a plurality of electrodes in a reaction cell in order to tailor the current distribution in the electrolyte over time. Focusing elements may be used to create “virtual electrode” in proximity to the surface of the work piece to further control the current distribution in the electrolyte during plating or planarization.
摘要翻译：使用方位不对称电极对工件进行电镀或电平面化处理。方位不对称电极相对于工件旋转（即，工件和电极中的任一个或两者可以旋转）。方位不对称性提供了到达工件的当前分布的曝光时间校正。在一些实施例中，总电流分布在反应池中的多个电极之间，以便随着时间的推移来调整电解质中的电流分布。可以使用聚焦元件在工件的表面附近产生“虚拟电极”，以进一步控制在电镀或平坦化期间电解液中的电流分布。

94. 发明申请

US20100029088A1 Modulated metal removal using localized wet etching 有权
标题翻译：使用局部湿蚀刻调制金属去除
公开(公告)号：US20100029088A1
公开(公告)日：2010-02-04
申请号：US12462424
申请日：2009-08-04
申请人： Steven T. Mayer , David W. Porter
发明人： Steven T. Mayer , David W. Porter
IPC分类号： H01L21/306
CPC分类号： H01L21/6708 , C23F1/08 , C23F1/34 , C25F3/12 , H01L21/32115 , H01L21/32134
摘要： An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances. Nozzle flow resistances and drain flow resistances are matched so that switching the flow from a nozzle to a corresponding drain flow path does not change the flow rate of etching liquid through other nozzles. A non-wafer-contacting measuring device measures a metal thickness on a rotating semiconductor wafer during metal wet etching by immersing a plurality of electrodes in etching liquid in close proximity to the wafer surface of the rotating wafer and determining electrical resistance between a plurality of electrodes.
摘要翻译：用于从半导体晶片湿式蚀刻金属的设备包括用于旋转晶片的晶片保持器和用于将分离的蚀刻液体的流动图案施加到晶片的表面的多个喷嘴。流动模式影响晶片在不同的带状冲击区域。在总腐蚀时间期间，调制来自至少一个喷嘴的蚀刻液体的流动模式，以控制一个局部蚀刻区域中相对于一个或多个其它局部蚀刻区域中的累积蚀刻速率的累积蚀刻速率。一些实施例包括由水平防溅罩隔开的下蚀刻室和上冲洗室。一些实施例包括用于防止蚀刻液体溅射到处理容器的内壁上的可伸缩垂直防溅屏蔽。蚀刻液输送系统包括具有相应的喷嘴流动阻力的多个喷嘴流动路径和具有相应的漏极流动阻力的多个排出流动路径。喷嘴流阻和排流阻力匹配，使得从喷嘴到相应的排水流路的流动不会改变通过其它喷嘴的蚀刻液的流量。非晶片接触测量装置通过将多个电极浸入在旋转晶片的晶片表面附近的蚀刻液中来测量金属湿蚀刻期间的旋转半导体晶片上的金属厚度，并且确定多个电极之间的电阻。

95. 发明授权

US07560016B1 Selectively accelerated plating of metal features 有权
标题翻译：选择性加速电镀金属功能
公开(公告)号：US07560016B1
公开(公告)日：2009-07-14
申请号：US12291277
申请日：2008-11-07
申请人： Steven T. Mayer , John Stephen Drewery
发明人： Steven T. Mayer , John Stephen Drewery
IPC分类号： C25D5/02
CPC分类号： H05K3/243 , H05K3/108 , H05K2201/0367 , H05K2201/09745 , H05K2203/0392 , H05K2203/122
摘要： To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.
摘要翻译：为了制造金属特征，将不可镀层施加到工件表面，然后被图案化以形成第一镀层区域和第一非镀层区域。然后，金属沉积在工件上，以在所述第一镀覆区域中形成凸起区域，并在所述第一非镀覆区域中形成凹陷区域。然后，加工膜全部应用于工件上。加速膜的一部分从场区域选择性地去除，并且加速膜的另一部分残留在凹入加速区域中。然后，金属沉积在工件上，并且金属在加速区域中以加速的速率沉积，导致与非激活场区域中的金属相比，加速区域中的金属厚度更大。然后，从场区域中完全去除金属，从而形成金属特征。

96. 发明授权

US07449099B1 Selectively accelerated plating of metal features 失效
标题翻译：选择性加速电镀金属功能
公开(公告)号：US07449099B1
公开(公告)日：2008-11-11
申请号：US10947085
申请日：2004-09-21
申请人： Steven T. Mayer , John Stephen Drewery
发明人： Steven T. Mayer , John Stephen Drewery
IPC分类号： C25D5/02
CPC分类号： H05K3/243 , H05K3/108 , H05K2201/0367 , H05K2201/09745 , H05K2203/0392 , H05K2203/122
摘要： To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.
摘要翻译：为了制造金属特征，将不可镀层施加到工件表面，然后被图案化以形成第一镀层区域和第一非镀层区域。然后，金属沉积在工件上，以在所述第一镀覆区域中形成凸起区域，并在所述第一非镀覆区域中形成凹陷区域。然后，加工膜全部应用于工件上。加速膜的一部分从场区域选择性地去除，并且加速膜的另一部分残留在凹入加速区域中。然后，金属沉积在工件上，并且金属在加速区域中以加速的速率沉积，导致与非激活场区域中的金属相比，加速区域中的金属厚度更大。然后，从场区域中完全去除金属，从而形成金属特征。

97. 发明授权

US07211175B1 Method and apparatus for potential controlled electroplating of fine patterns on semiconductor wafers 有权
标题翻译：用于在半导体晶片上精细图案的电位控制电镀的方法和装置
公开(公告)号：US07211175B1
公开(公告)日：2007-05-01
申请号：US10365577
申请日：2003-02-11
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： C25B15/02 , C25D17/00
CPC分类号： C25D17/001 , C25D17/005 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译：控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

98. 发明授权

US5932185A Method for making thin carbon foam electrodes 失效
标题翻译：制造薄碳泡沫电极的方法
公开(公告)号：US5932185A
公开(公告)日：1999-08-03
申请号：US110003
申请日：1993-08-23
申请人： Richard W. Pekala , Steven T. Mayer , James L. Kaschmitter , Robert L. Morrison
发明人： Richard W. Pekala , Steven T. Mayer , James L. Kaschmitter , Robert L. Morrison
IPC分类号： B01J23/18 , B01J37/08 , B22F3/11 , C04B38/00 , C04B41/50 , C04B41/85 , H01G9/00 , H01G9/155 , H01M4/36 , H01M4/58 , C01B31/00
CPC分类号： H01G9/155 , B01J23/18 , B01J37/084 , B22F3/114 , C04B38/0022 , C04B41/5001 , C04B41/85 , H01M4/36 , H01M4/587 , C02F1/4691 , Y02E60/13
摘要： A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.
摘要翻译：通过用合适的碳泡沫前体材料渗透高度多孔碳纸，膜，毡，金属纤维/粉末或织物来制造薄的扁平碳电极的方法。然后将渗透的碳纸固化以形成凝胶饱和碳纸，随后将其干燥并热解，形成多孔碳薄片。该材料在固化和热解过程中易于保持平坦和柔性，形成薄片。前体材料包括聚丙烯腈（PAN），聚甲基丙烯腈（PMAN），间苯二酚/甲醛，邻苯二酚/甲醛，苯酚/甲醛等，或其混合物。这些薄膜非常适用于电池，电容器和燃料电池中的高功率和高能量电极，并且可用于电容去离子，过滤和催化。

99. 发明授权

US5636437A Fabricating solid carbon porous electrodes from powders 失效
标题翻译：从粉末制造固体碳多孔电极
公开(公告)号：US5636437A
公开(公告)日：1997-06-10
申请号：US440168
申请日：1995-05-12
申请人： James L. Kaschmitter , Tri D. Tran , John H. Feikert , Steven T. Mayer
发明人： James L. Kaschmitter , Tri D. Tran , John H. Feikert , Steven T. Mayer
IPC分类号： C02F1/461 , H01M4/02 , H01M4/58 , H01M4/96 , H01R43/00
CPC分类号： H01M4/587 , H01M4/13 , H01M4/96 , C02F1/46109 , C02F1/4691 , Y02P70/54 , Y10T29/49117
摘要： Fabrication of conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive dionization, and waste treatment. Electrodes fabricated from low surface area (
摘要翻译：用于电池，双层电容器，燃料电池，电容式去离子和废物处理的导电固体多孔碳电极的制造。由低表面积（<50m2 / gm）石墨和焦炭制成的电极表现出优异的可逆锂嵌入特性，使其成为高压锂离子（锂离子）电池中用作阳极的理想选择。具有较高表面积的电极由碳黑气凝胶粉末，碳气凝胶微球，活性炭等制成，产生具有优异双层容量的高导电性碳复合材料，可用于双层电容器，或用于双层电容器液体流的电容去离子和/或废物处理。通过添加高表面积碳的金属催化剂，可以制造燃料电池电极。

100. 发明授权

US5096550A Method and apparatus for spatially uniform electropolishing and electrolytic etching 失效
标题翻译：用于空间均匀电解和电解蚀刻的方法和装置
公开(公告)号：US5096550A
公开(公告)日：1992-03-17
申请号：US597225
申请日：1990-10-15
申请人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
发明人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
IPC分类号： C25F3/02 , C25F3/16 , C25F7/00
CPC分类号： C25F7/00 , C25F3/02 , C25F3/16 , Y10S204/07
摘要： In an electropolishing or electrolytic etching apparatus the anode is separated from the cathode to prevent bubble transport to the anode and to produce a uniform current distribution at the anode by means of a solid nonconducting anode-cathode barrier. The anode extends into the top of the barrier and the cathode is outside the barrier. A virtual cathode hole formed in the bottom of the barrier below the level of the cathode permits current flow while preventing bubble transport. The anode is rotatable and oriented horizontally facing down. An extended anode is formed by mounting the workpiece in a holder which extends the electropolishing or etching area beyond the edge of the workpiece to reduce edge effects at the workpiece. A reference electrode controls cell voltage. Endpoint detection and current shut-off stop polishing. Spatially uniform polishing or etching can be rapidly performed.
摘要翻译：在电解抛光或电解蚀刻装置中，阳极与阴极分离，以防止气泡传输到阳极，并通过固体非导电阳极 - 阴极屏障在阳极处产生均匀的电流分布。阳极延伸到屏障的顶部，阴极在屏障外。形成在阴极底部的阴极底部的虚拟阴极孔允许电流流动，同时防止气泡输送。阳极可旋转并水平定向朝下。扩展阳极通过将工件安装在将电解抛光或蚀刻区域延伸超过工件边缘的保持器中形成，以减少工件的边缘效应。参考电极控制电池电压。端点检测和电流切断停止抛光。可以快速进行空间均匀的抛光或蚀刻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式