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91. 发明申请

US20090122225A1 Light concentrating sheet, backlight unit including the light concentrating sheet and liquid crystal display module including the backlight unit 有权
标题翻译：集光片，包括聚光片的背光单元和包括背光单元的液晶显示模块
公开(公告)号：US20090122225A1
公开(公告)日：2009-05-14
申请号：US12285925
申请日：2008-10-16
申请人： Jae-Hyun Park
发明人： Jae-Hyun Park
IPC分类号： G02F1/13357 , F21V99/00
CPC分类号： G02B5/045 , G02F2001/133607
摘要： A light concentrating sheet for a liquid crystal display module includes a first base film having flat inner and outer surfaces; a first light concentrating film on the first base film and having a first thermal expansion coefficient; a second light concentrating film on the first light concentrating film and having a second thermal expansion coefficient; and a second base film on the second light concentrating film and having flat inner and outer surfaces.
摘要翻译：一种用于液晶显示模块的聚光片包括具有平坦的内表面和外表面的第一基膜; 第一聚光膜在第一基膜上并具有第一热膨胀系数; 在第一聚光膜上的第二聚光膜，具有第二热膨胀系数; 以及在第二聚光膜上的第二基膜，并具有平坦的内表面和外表面。

92. 发明授权

US07372722B2 Methods of operating magnetic random access memory devices including heat-generating structures 有权
标题翻译：包括发热结构的磁性随机存取存储器件的操作方法
公开(公告)号：US07372722B2
公开(公告)日：2008-05-13
申请号：US11263521
申请日：2005-10-31
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/00 , G11C11/34
CPC分类号： G11C11/15
摘要： Methods may be provided for operating a magnetic random access memory (MRAM device including a magnetic tunnel junction structure and a heat generating layer. More particularly, a write current may be provided through the magnetic tunnel junction structure and through the heat generating layer, and the write current may have a magnitude sufficient to change a program state of the magnetic tunnel junction structure. Related devices are also discussed.
摘要翻译：可以提供用于操作磁性随机存取存储器（包括磁性隧道结结构和发热层的MRAM器件）的方法，更具体地说，可以通过磁性隧道结结构和通过发热层提供写入电流，写入电流可能具有足以改变磁性隧道结结构的编程状态的量值，还讨论了相关器件。

93. 发明申请

US20070298419A1 K-Ras Oligonucleotide Microarray and Method for Detecting K-Ras Mutations Employing the Same 审中-公开
标题翻译： K-Ras寡核苷酸微阵列和检测使用它的K-Ras突变的方法
公开(公告)号：US20070298419A1
公开(公告)日：2007-12-27
申请号：US11587569
申请日：2004-11-22
申请人： Jae-Gahb Park , Il-Jin Kim , Hio-Chung Kang , Jae-Hyun Park
发明人： Jae-Gahb Park , Il-Jin Kim , Hio-Chung Kang , Jae-Hyun Park
IPC分类号： C12Q1/68 , C12M1/00
CPC分类号： C12Q1/6886 , C12Q1/6837 , C12Q2600/156
摘要： Since the K-ras oligonucleotide microarray of the present invention can detect K-ras mutations by applying a competitive DNA hybridization method to the oligonucleotides spotted on a solid matrix different from the previously reported method for detecting a mutation, it makes the more precise analysis and can reduce experimental cost and time. Accordingly, the K-ras oligonucleotide microarray of the present invention can be used in studies to detect K-ras mutations and unravel the signal transduction mechanism and tumorigenesis related to K-ras gene. Further, since the microarray of the present invention can be applied to other genes having mutational hot spot regions such as K-ras, it has wide applicable range.
摘要翻译：由于本发明的K-ras寡核苷酸微阵列可以通过将竞争性DNA杂交方法应用于与先前报道的用于检测突变的方法不同的固体基质上的寡核苷酸来检测K-ras突变，从而进行更精确的分析和可以降低实验成本和时间。因此，本发明的K-ras寡核苷酸微阵列可用于检测K-ras突变和揭示与K-ras基因相关的信号转导机制和肿瘤发生的研究。此外，由于本发明的微阵列可以应用于具有K-ras等突变热点区域的其他基因，因此具有广泛的适用范围。

94. 发明授权

US07307874B2 Methods of operating magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures 失效
标题翻译：操作包括邻近磁隧道结结构的磁体的磁随机存取存储器件的方法
公开(公告)号：US07307874B2
公开(公告)日：2007-12-11
申请号：US11177641
申请日：2005-07-08
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16
CPC分类号： G11C11/15
摘要： A magnetic random access memory device may include a memory cell access transistor on a substrate, a bit line spaced apart from the substrate, and a magnetic tunnel junction structure electrically coupled between the bit line and the memory cell access transistor. At least one magnet may be positioned adjacent a sidewall of the magnetic tunnel junction structure and may be configured to provide a magnetic field through the magnetic tunnel junction structure. Related methods of operating magnetic random access memory devices are also discussed.
摘要翻译：磁性随机存取存储器件可以包括衬底上的存储单元存取晶体管，与衬底间隔开的位线，以及电耦合在位线和存储单元存取晶体管之间的磁性隧道结结构。至少一个磁体可以邻近磁性隧道结结构的侧壁定位，并且可以被配置为通过磁性隧道结结构提供磁场。还讨论了操作磁随机存取存储器件的相关方法。

95. 发明申请

US20070252190A1 Nonvolatile memory device and method for manufacturing the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20070252190A1
公开(公告)日：2007-11-01
申请号：US11653962
申请日：2007-01-17
申请人： Jae-Hyun Park , Chul-Soon Kwon , Jae-Min Yu , Ji-Woon Rim , Young-Cheon Jeong , In-Gu Yoon , Jung-Ho Moon
发明人： Jae-Hyun Park , Chul-Soon Kwon , Jae-Min Yu , Ji-Woon Rim , Young-Cheon Jeong , In-Gu Yoon , Jung-Ho Moon
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7885
摘要： Provided are a nonvolatile memory device and a method for manufacturing the same. The nonvolatile memory device may include a semiconductor substrate, a floating gate, a second insulation layer, a third insulation layer, a control gate, and a common source line. The semiconductor substrate may have an active region limited by a device isolation region. The floating gate may be formed on the active region with a first insulation layer between the floating gate and the active region. The second insulation layer covers one side of the floating gate, and the third insulation layer covers the floating gate and the second insulation layer. The control gate may be formed on the other side of the floating gate with a fourth insulation layer between the control gate and the floating gate. The common source line may be formed in a portion of the substrate that is located under the second insulation layer.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件可以包括半导体衬底，浮置栅极，第二绝缘层，第三绝缘层，控制栅极和公共源极线。半导体衬底可以具有被器件隔离区限制的有源区。浮置栅极可以在有源区上形成在浮置栅极和有源区域之间的第一绝缘层。第二绝缘层覆盖浮栅的一侧，第三绝缘层覆盖浮栅和第二绝缘层。控制栅极可以在浮动栅极的另一侧上形成在控制栅极和浮动栅极之间的第四绝缘层。公共源极线可以形成在位于第二绝缘层下方的衬底的一部分中。

96. 发明申请

US20070155093A1 Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same 审中-公开
标题翻译：具有直径控制触点的多位相变随机存取存储器（PRAM）及其制造和编程方法
公开(公告)号：US20070155093A1
公开(公告)日：2007-07-05
申请号：US11586820
申请日：2006-10-26
申请人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
发明人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
IPC分类号： H01L21/336
CPC分类号： H01L45/06 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
摘要翻译：相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

97. 发明申请

US20060228853A1 Memory devices including spacers on sidewalls of memory storage elements and related methods 审中-公开
标题翻译：存储器件包括存储器存储元件侧壁上的隔离物和相关方法
公开(公告)号：US20060228853A1
公开(公告)日：2006-10-12
申请号：US11388111
申请日：2006-03-23
申请人： Won-Cheol Jeong , Se-Ho Lee , Kyung-Chang Ryoo , Jae-Hyun Park
发明人： Won-Cheol Jeong , Se-Ho Lee , Kyung-Chang Ryoo , Jae-Hyun Park
IPC分类号： H01L21/8244 , H01L21/8234
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A method of forming a memory device may include forming an insulating layer on a substrate, and forming a first electrode through at least a portion of the insulating layer. A memory storage element may be formed on the first electrode so that the first electrode is between the memory storage element and the substrate, and a second electrode may be formed on the memory storage element so that the memory storage element is between the first and second electrodes. After forming the memory storage element and after forming the second electrode, insulating spacers may be formed on sidewalls of the memory storage element. After forming the insulating spacers, an interconnection line may be formed on the second electrode, on the insulating spacers, and on the insulating layer beyond the insulating spacers. Related memory devices are also discussed.
摘要翻译：形成存储器件的方法可以包括在衬底上形成绝缘层，以及通过绝缘层的至少一部分形成第一电极。存储器存储元件可以形成在第一电极上，使得第一电极位于存储器存储元件和衬底之间，并且可以在存储器存储元件上形成第二电极，使得存储器存储元件位于第一和第二电极之间电极。在形成存储器元件之后，在形成第二电极之后，可以在存储器存储元件的侧壁上形成绝缘间隔物。在形成绝缘间隔物之后，可以在第二电极，绝缘间隔物上以及绝缘层上形成互连线，超过绝缘间隔物。还讨论了相关的存储器件。

98. 发明授权

US07115470B2 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process 失效
标题翻译：使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
公开(公告)号：US07115470B2
公开(公告)日：2006-10-03
申请号：US10840803
申请日：2004-05-07
申请人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
发明人： Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , G11C16/0425 , H01L21/28273 , H01L29/42324 , H01L29/7885
摘要： There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.
摘要翻译：提供了使用间隔物氧化工艺制造分裂栅极闪存单元的方法。在浮栅层上形成氧化阻挡层，在氧化阻挡层中形成露出浮栅的一部分的开口。随后，通过氧化形成具有绝缘性的材料层的开口的侧壁上的间隔物，并且在开口中形成浮栅和控制栅之间的栅间氧化层图案，同时通过执行氧化过程。

99. 发明申请

US20060104200A1 Terminal for automatically changing operating mode and wireless network system having the same, and method thereof 审中-公开
标题翻译：用于自动改变操作模式的终端和具有相同功能的无线网络系统及其方法
公开(公告)号：US20060104200A1
公开(公告)日：2006-05-18
申请号：US11274394
申请日：2005-11-16
申请人： Jae-Hyun Park
发明人： Jae-Hyun Park
IPC分类号： H04J1/16
CPC分类号： H04W88/06 , H04W8/22 , H04W84/18
摘要： A terminal for automatically changing a communication mode, a wireless network system having the same, and a method thereof are disclosed. The terminal comprises a wireless communication module for communicating with a corresponding terminal through an access point connected to a communication infrastructure. The terminal further comprising a first memory for storing Ad-Hoc information previously established between the terminal and the corresponding terminal, and a controller for controlling the wireless communication module to communicate with the corresponding terminal based on an Ad-Hoc communication mode using the Ad-Hoc information stored in the first memory when the network access point has malfunctioned.
摘要翻译：公开了一种用于自动改变通信模式的终端，具有该通信模式的无线网络系统及其方法。终端包括用于通过连接到通信基础设施的接入点与相应终端进行通信的无线通信模块。所述终端还包括用于存储先前在所述终端和所述对应终端之间建立的Ad-Hoc信息的第一存储器，以及用于基于使用所述Ad-Hoc通信模式的Ad-Hoc通信模式来控制所述无线通信模块与所述对应终端进行通信的控制器，当网络接入点发生故障时存储在第一个存储器中的Hoc信息。

100. 发明申请

US20060092698A1 Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methods 失效
标题翻译：磁性随机存取存储器件包括与磁隧道结结构相邻的磁体及相关方法
公开(公告)号：US20060092698A1
公开(公告)日：2006-05-04
申请号：US11177641
申请日：2005-07-08
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： A magnetic random access memory device may include a memory cell access transistor on a substrate, a bit line spaced apart from the substrate, and a magnetic tunnel junction structure electrically coupled between the bit line and the memory cell access transistor. At least one magnet may be positioned adjacent a sidewall of the magnetic tunnel junction structure and may be configured to provide a magnetic field through the magnetic tunnel junction structure. Related methods of operating magnetic random access memory devices are also discussed.
摘要翻译：磁性随机存取存储器件可以包括衬底上的存储单元存取晶体管，与衬底间隔开的位线以及电耦合在位线和存储单元存取晶体管之间的磁性隧道结结构。至少一个磁体可以邻近磁性隧道结结构的侧壁定位，并且可以被配置为通过磁性隧道结结构提供磁场。还讨论了操作磁随机存取存储器件的相关方法。

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