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91. 发明申请

US20080225426A1 Magnetic recording device including a thermal proximity sensor 有权
标题翻译：包括热接近传感器的磁记录装置
公开(公告)号：US20080225426A1
公开(公告)日：2008-09-18
申请号：US11724739
申请日：2007-03-16
申请人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
发明人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
IPC分类号： G11B27/36 , G11B21/04
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/314 , G11B5/40 , G11B5/6064 , G11B5/607
摘要： A system includes a magnetic device for writing to and reading from a magnetic medium and a sensor disposed adjacent to the magnetic device and proximate to the magnetic medium. The sensor generates signals related to thermal variations in the sensor caused by changes in a distance between the magnetic device and the magnetic medium.
摘要翻译：一种系统包括用于写入和读取磁性介质的磁性装置和邻近磁性装置设置并靠近磁性介质的传感器。该传感器产生与由磁性装置和磁性介质之间的距离变化引起的传感器热变化相关的信号。

92. 发明授权

US09234948B2 Single-package bridge-type magnetic field sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US09234948B2
公开(公告)日：2016-01-12
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/02 , G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

93. 发明授权

US09116199B2 Full-bridge magnetoresistive rotation sensors and mass fabrication method 有权
标题翻译：全桥磁阻旋转传感器和大量制造方法
公开(公告)号：US09116199B2
公开(公告)日：2015-08-25
申请号：US14002734
申请日：2012-03-02
申请人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： G01B7/14 , G01B7/30 , G01R33/06 , H01L43/08 , G01R33/09 , B82Y25/00 , G01D5/14 , G01R33/02
CPC分类号： G01R33/098 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/093 , H01L43/08
摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
摘要翻译：公开了一种用于测量磁体旋转角度的单包磁阻角传感器。磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。每个磁阻传感器芯片包括一对磁阻传感器臂。每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个Pined层。磁阻传感器的元件块电连接并通过引线接合连接到封装引线。磁阻角传感器可以封装成各种标准的半导体封装设计。此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

94. 发明申请

US20140062471A1 Single-package Power Meter 有权
标题翻译：单包电力仪表
公开(公告)号：US20140062471A1
公开(公告)日：2014-03-06
申请号：US13882133
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R21/00
CPC分类号： G01R33/098 , G01R15/205 , G01R21/00 , G01R21/06 , G01R22/10
摘要： A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.
摘要翻译：公开了一种用于测量连接到电导体的负载消耗的功率的单封装功率计。功率计通过使用磁传感器或通过磁传感器和电容器的组合与电导体电隔离。在负载和其他所需参数下消耗的瞬时功率通过测量负载和电流通过电导体的电流来确定。使用磁传感器测量电流，以检测与流过电导体的电流相关的磁场。电压通过涉及磁传感器的两种可能技术之一来测量，以测量流过与负载并联连接的线圈的电流，或通过使用与负载并联连接的电容耦合分压器。还公开了一种专用集成电路，其控制用于自动量程目的的传感器的偏置电流并且还用于计算期望的参数，例如功率消耗。

95. 发明申请

US20140035573A1 SINGLE-CHIP TWO-AXIS MAGNETIC FIELD SENSOR 有权
标题翻译：单芯片双轴磁场传感器
公开(公告)号：US20140035573A1
公开(公告)日：2014-02-06
申请号：US14110106
申请日：2012-05-23
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.
摘要翻译：本发明公开了一种基于磁性隧道结（MTJ）元件和集成在半导体衬底上的永磁体的单芯片双轴磁场传感器的设计，以产生检测正交磁场分量的两种传感器桥。正交磁场分量检测能力来自可以通过改变MTJ元件的形状和由永磁体产生的偏置场来产生的不同类型的传感器桥。因为永磁体可以在不同传感器桥上产生正交偏置场，所以可以使用单个固定层来设置两个传感器桥的方向。这是有利的，因为它允许在单个半导体芯片上制造双轴传感器，而不需要诸如局部加热或具有不同钉扎层设置方向的多个磁阻膜的沉积等专门的处理技术。

96. 发明授权

US08487390B2 Memory cell with stress-induced anisotropy 有权
标题翻译：具有应力诱导各向异性的记忆体
公开(公告)号：US08487390B2
公开(公告)日：2013-07-16
申请号：US12418911
申请日：2009-04-06
申请人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Daniel Stricklin , Olle Gunnar Heinonen , Insik Jin
发明人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Daniel Stricklin , Olle Gunnar Heinonen , Insik Jin
IPC分类号： H01L29/82 , G11C11/14
CPC分类号： G11C11/1675 , G11C11/161
摘要： A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.
摘要翻译：具有应力诱导的磁各向异性的磁记忆元件。存储元件具有可切换的磁化方向可转换的铁磁自由层，具有钉扎磁化取向的铁磁参考层和它们之间的非磁性间隔层。自由层可以是圆形的，基本上是圆形的或近似圆形的。

97. 发明授权

US08476721B2 Magnet-assisted transistor devices 失效
标题翻译：磁铁辅助晶体管器件
公开(公告)号：US08476721B2
公开(公告)日：2013-07-02
申请号：US13088832
申请日：2011-04-18
申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
发明人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
IPC分类号： H01L29/82 , H01L21/00 , H01L21/326
CPC分类号： H01L29/7881 , H01L27/11521 , H01L29/66825
摘要： A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
摘要翻译：晶体管器件包括适于在器件的沟道内的源极区域和漏极区域之间偏转自由电子载流子的磁场源。根据优选的构造，磁场源包括在与晶体管器件的栅极相对的沟道侧延伸的磁性材料层。

98. 发明授权

US08223532B2 Magnetic field assisted STRAM cells 有权
标题翻译：磁场辅助STRAM细胞
公开(公告)号：US08223532B2
公开(公告)日：2012-07-17
申请号：US12199126
申请日：2008-08-27
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

99. 发明授权

US08053244B2 Magnetic oscillator based biosensor 失效
标题翻译：基于磁振荡器的生物传感器
公开(公告)号：US08053244B2
公开(公告)日：2011-11-08
申请号：US12190687
申请日：2008-08-13
申请人： Pat J. Ryan , Haiwen Xi , Insik Jin
发明人： Pat J. Ryan , Haiwen Xi , Insik Jin
IPC分类号： G01N27/00 , G01N27/72 , G01N33/543 , G01N33/551
CPC分类号： G01N27/745
摘要： A biosensor is described. The biosensor includes a fixed multilayer stack providing a magnetization oscillation, a voltage source electrically coupled to the fixed multilayer stack, and a binding molecule covalently bonded to the biosensor. The voltage source provides a direct current through the fixed multilayer stack to generate the magnetization oscillation and a target molecule including a magnetic nanoparticle forms a complex with the binding molecule and alters the magnetization oscillation.
摘要翻译：描述生物传感器。生物传感器包括提供磁化振荡的固定多层堆叠，电耦合到固定多层叠层的电压源和共价键合到生物传感器上的结合分子。电压源提供通过固定多层堆叠的直流电以产生磁化振动，并且包括磁性纳米颗粒的靶分子与结合分子形成复合物并改变磁化振荡。

100. 发明授权

US08000128B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US08000128B2
公开(公告)日：2011-08-16
申请号：US12835791
申请日：2010-07-14
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

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