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91. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

92. 发明授权

US06306669B1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06306669B1
公开(公告)日：2001-10-23
申请号：US09289061
申请日：1999-04-12
申请人： Hiroyuki Yano , Katsuya Okumura
发明人： Hiroyuki Yano , Katsuya Okumura
IPC分类号： H01L2166
CPC分类号： H01L22/26 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： An equipment for manufacturing semiconductor devices is disclosed. This equipment comprises a processing tool for processing a to-be-processed surface of a semiconductor workpiece to a target shape, and a monitor for three-dimensionally monitoring a shape of a processed surface of the semiconductor workpiece while the semiconductor workpiece is set in the processing tool. The monitor radiates the processed surface with incoherent light, divides light reflected from the processed surface, into a plurality of light beams of different wavelengths, acquires a two-dimensional image from each of the divided light beams of different wavelengths, three-dimensionally analyzes the shape of the processed surface, and transmits information on the analysis results to a controller. The controller controls the processing tool in a feedback manner on the basis of the information.
摘要翻译：公开了一种用于制造半导体器件的设备。该设备包括用于将半导体工件的待处理表面加工成目标形状的处理工具，以及用于三维地监视半导体工件的加工表面的形状的监视器，同时半导体工件被设置在加工工具。监视器以不相干的光照射经处理的表面，将从处理过的表面反射的光分成多个不同波长的光束，从不同波长的分割光束中获取二维图像，三维分析并且将关于分析结果的信息发送到控制器。控制器根据信息以反馈方式控制处理工具。

93. 发明授权

US06268641B1 Semiconductor wafer having identification indication and method of manufacturing the same 失效
公开(公告)号：US06268641B1
公开(公告)日：2001-07-31
申请号：US09050035
申请日：1998-03-30
申请人： Hiroyuki Yano , Katsuya Okumura
发明人： Hiroyuki Yano , Katsuya Okumura
IPC分类号： H01L23544
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54493 , H01L2924/0002 , Y10S438/959 , H01L2924/00
摘要： An identification indication is formed on a side surface of a semiconductor wafer, and thus even if various treatment processes are repeatedly conducted for forming a semiconductor circuit, or even by the wrapping treatment on the rear side of the wafer, the identification indication cannot disappear or become unclear so that the identification indication can be clearly recognized at least until the process for cutting the wafer into chips.

94. 发明授权

US5914275A Polishing apparatus and method for planarizing layer on a semiconductor wafer 失效
公开(公告)号：US5914275A
公开(公告)日：1999-06-22
申请号：US897324
申请日：1997-07-21
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

95. 发明授权

US5763463A Pyridine compounds which are useful as pesticides 失效
标题翻译：用作农药的吡啶化合物
公开(公告)号：US5763463A
公开(公告)日：1998-06-09
申请号：US849718
申请日：1997-06-25
申请人： Nobuo Takefuji , Masao Nakatani , Junko Suzuki , Masami Ozaki , Ryouhei Ueno , Hiroyuki Yano , Mieko Kawashima , Yutaka Kurihara , Tomonori Shimazu
发明人： Nobuo Takefuji , Masao Nakatani , Junko Suzuki , Masami Ozaki , Ryouhei Ueno , Hiroyuki Yano , Mieko Kawashima , Yutaka Kurihara , Tomonori Shimazu
IPC分类号： A01N43/40 , A01N47/20 , C07D213/75 , C07D213/84 , C07D213/85 , C07F7/08 , C07D213/71
CPC分类号： C07D213/75 , A01N43/40 , A01N47/20 , C07D213/84 , C07D213/85 , C07F7/0812
摘要： A pyridine derivative of the formula (I), or its oxide or salt: ##STR1## wherein R.sup.1 is a halogen atom, an alkyl group, etc., R.sup.2 is an alkenyl group, an alkynyl group, an alkoxycarbonyl group, an alkenyloxycarbonyl group, etc., R.sup.3 is a hydrogen atom, etc., R.sup.4 is a halogen atom, a cyano group, a haloalkyl group, etc., each of R.sup.5 and R.sup.6 is a hydrogen atom, etc., Q is a methine group or a nitrogen atom, m is 0 or 1, n is 1 or 2 and r is 1 or 2. Such a compound is useful as a pesticide. The compound of the present invention is a pyridine derivative which is capable of killing or controlling various pests without adversely affecting crop plants and which is readily decomposable and presents no substantial acute toxity to mammals.
摘要翻译： PCT No.PCT / JP96 / 01096 Sec。 371日期：1997年6月25日 102（e）日期1996年6月25日PCT提交1996年4月23日PCT公布。第WO96 / 33975号公报日期：1996年10月31日一种式（I）的吡啶衍生物或其氧化物或盐：其中R1是卤素原子，烷基等，R2是链烯基，炔基，烷氧基羰基，链烯氧基羰基等，R3为氢原子等，R4为卤素原子，氰基，卤代烷基等，R5和R6分别为氢原子等。 Q为次甲基或氮原子，m为0或1，n为1或2，r为1或2.这种化合物可用作农药。本发明的化合物是能够杀死或控制各种害虫而不会不利影响作物的吡啶衍生物，其易于分解并且对哺乳动物没有显着的急性毒性。

96. 发明授权

US5728699A Benzylsulfide derivative, process for its production and pesticide 失效
标题翻译：苄硫醚衍生物，其生产工艺及农药
公开(公告)号：US5728699A
公开(公告)日：1998-03-17
申请号：US750774
申请日：1996-12-19
申请人： Keiji Toriyabe , Hideharu Sasaki , Naoshi Masuyama , Akihide Nagai , Hiroyuki Yano , Mieko Kawashima , Yutaka Kurihara , Tomonori Shimazu
发明人： Keiji Toriyabe , Hideharu Sasaki , Naoshi Masuyama , Akihide Nagai , Hiroyuki Yano , Mieko Kawashima , Yutaka Kurihara , Tomonori Shimazu
IPC分类号： A01N33/26 , A01N35/04 , A01N35/10 , A01N37/28 , A01N41/06 , A01N41/10 , A01N41/12 , A01N43/06 , A01N43/36 , A01N43/40 , A01N43/653 , A01N43/78 , A01N47/02 , A01N47/24 , A01N47/34 , A01N51/00 , A01P7/04 , C07C251/86 , C07C315/04 , C07C317/28 , C07C323/29 , C07C323/48 , C07C323/60 , C07D213/42 , C07D213/53 , C07D213/61 , C07D237/10 , A01N43/58 , C07C335/00 , C07D237/02
CPC分类号： C07C317/28 , A01N33/26 , A01N35/04 , A01N35/10 , A01N37/28 , A01N41/06 , A01N41/10 , A01N43/36 , A01N43/40 , A01N43/653 , A01N47/02 , A01N47/24 , A01N47/34 , A01N51/00 , C07C251/86 , C07C323/48 , C07C323/60 , C07D213/61
摘要： The present invention presents a benzylsulfide derivative of the formula (I) or its salt: ##STR1## wherein R.sup.1 is a C.sub.1-6 alkyl group, a C.sub.1-6 haloalkyl group, a C.sub.2-4 alkenyl group, a cyano group, etc., and each of R.sup.2 and R.sup.3 is a hydrogen atom, a halogen atom, a cyano group, a C.sub.1-4 alkyl group, a C.sub.1-3 haloalkyl group, etc., R.sup.4 is a hydrogen atom, a halogen atom, a C.sub.1-4 alkyl group, etc., A is a hydrazinoaralkyl group or hydrazonoaralkyl group, and n is 0, 1 or 2; a process for its production; and a pesticide containing such a benzylsulfide derivative as an active ingredient. The benzylsulfide derivative of the present invention is capable of controlling various pests without adversely affecting crop plants.
摘要翻译： PCT No.PCT / JP96 / 01055 Sec。 371 1996年12月19日第 102（e）日期1996年12月19日PCT PCT 1996年4月18日PCT公布。出版物WO96 / 33168 日期：1996年10月24日本发明提供式（I）的苄基硫醚衍生物或其盐：其中R 1为C 1-6烷基，C 1-6卤代烷基，C 2-4烯基基团，氰基等，R2和R3各自为氢原子，卤原子，氰基，C1-4烷基，C1-3卤代烷基等，R4为氢原子卤素原子，C 1-4烷基等，A为亚肼基烷基或亚肼基烷基，n为0,1或2; 一个生产过程; 以及含有苄基硫醚衍生物作为有效成分的农药。本发明的苄基硫醚衍生物能够控制各种害虫，而不会不利地影响作物。

97. 发明授权

US5633207A Method of forming a wiring layer for a semiconductor device 失效
标题翻译：形成半导体器件布线层的方法
公开(公告)号：US5633207A
公开(公告)日：1997-05-27
申请号：US321897
申请日：1994-10-14
申请人： Hiroyuki Yano , Katsuya Okumura
发明人： Hiroyuki Yano , Katsuya Okumura
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/465 , C03C15/00 , C23F1/00 , B44L1/22
CPC分类号： H01L21/768
摘要： A method of forming a wiring layer for a semiconductor device forms a first layer on a dielectric film on a substrate to protect integrated circuit devices from overpolishing when a wiring layer is formed on a second layer above the polish stop layer. The wiring layer is deposited using selective chemical vapor deposition to prevent contamination of the wafer.
摘要翻译：形成用于半导体器件的布线层的方法在基板上的电介质膜上形成第一层，以在布线层形成在抛光停止层上方的第二层上时保护集成电路器件不被过度抛光。使用选择性化学气相沉积来沉积布线层以防止晶片的污染。

98. 发明授权

US5593537A Apparatus for processing semiconductor wafers 失效
标题翻译：半导体晶圆处理装置
公开(公告)号：US5593537A
公开(公告)日：1997-01-14
申请号：US613944
申请日：1996-03-13
申请人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
发明人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
IPC分类号： H01L21/304 , B24B37/04 , B24D13/14 , H01L21/00
CPC分类号： B24B37/26 , B24B37/04 , Y10S451/921
摘要： The invention is directed to a semi-conductor wafer processing machine including an arm having a wafer carrier disposed at one end. The wafer carrier is rotatable with the rotating motion imparted to a semi-conductor wafer held thereon. In first embodiment, the machine further includes a rotatable polishing pad having an upper surface divided into a plurality of wedge-shaped sections, including an abrasion section and a polishing section. The abrasion section has a relatively rough texture and the polishing section has a relatively fine texture as compared to each other. In an alternative embodiment, the pad includes an underlayer and surface layer. The surface layer includes two sections of differing hardness, both of which are harder than the underlayer. Alternatively, the surface layer may include one relatively hard section, and the underlayer may include two sections, one of which has the same hardness as the surface layer and the other of which is softer than the surface layer. In a further embodiment, the polishing pad has an annular shape, and a chemical processing table is disposed within the open central region of the pad.
摘要翻译：本发明涉及一种半导体晶片加工机械，其包括具有设置在其一端的晶片载体的臂。晶片载体可转动，转动运动被施加到保持在其上的半导体晶片。在第一实施例中，机器还包括可旋转的抛光垫，其具有被分成多个楔形部分的上表面，该楔形部分包括磨损部分和抛光部分。磨损部分具有相对粗糙的结构，并且抛光部分具有相对于彼此相对较细的结构。在替代实施例中，垫包括底层和表面层。表面层包括两个不同于硬度的部分，它们都比底层更硬。或者，表面层可以包括一个相对硬的部分，并且底层可以包括两个部分，其中一个部分具有与表面层相同的硬度，而另一个部分比表面层更软。在另一实施例中，抛光垫具有环形形状，并且化学处理台设置在垫的开放中心区域内。

99. 发明授权

US5578531A Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5578531A
公开(公告)日：1996-11-26
申请号：US547581
申请日：1995-10-24
申请人： Masako Kodera , Atsushi Shigeta , Hiroyuki Yano
发明人： Masako Kodera , Atsushi Shigeta , Hiroyuki Yano
IPC分类号： H01L21/304 , H01L21/3105 , H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/522
CPC分类号： H01L21/31053 , H01L21/76819 , Y10S438/97
摘要： First through fourth wiring layers are formed on the surface of a silicon substrate, then a silicon oxide layer containing fluorine is deposited over the wiring layers and the silicon substrate, and then another silicon oxide layer containing no fluorine is deposited over the silicon oxide layer containing fluorine. Subsequently, the silicon oxide layer containing no fluorine is flattened by polishing it for a predetermined length of time when the silicon oxide layer containing no fluorine is polished, the silicon oxide layer containing fluorine serves as a stopper, since the polishing rate of the silicon oxide layer containing fluorine is lower than that of the silicon oxide layer containing no fluorine.
摘要翻译：在硅衬底的表面上形成第一到第四布线层，然后在布线层和硅衬底上沉积含氟的氧化硅层，然后在不含氟的氧化硅层上沉积含有氟的氧化硅层，氟。随后，当不含氟的氧化硅层被研磨时，将不含氟的氧化硅层经过研磨而平坦化预定的时间长度，由于氧化硅的研磨速度，含氟的层比不含氟的氧化硅层低。

100. 发明授权

US5445996A Method for planarizing a semiconductor device having a amorphous layer 失效
标题翻译：用于平坦化具有非晶层的半导体器件的方法
公开(公告)号：US5445996A
公开(公告)日：1995-08-29
申请号：US66375
申请日：1993-05-25
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/302 , H01L21/463
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
摘要翻译：为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。此外，以增强的抛光速率对绝缘膜进行抛光。

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