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91. 发明申请

US20120135559A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20120135559A1
公开(公告)日：2012-05-31
申请号：US13366505
申请日：2012-02-06
申请人： Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
发明人： Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
IPC分类号： H01L31/18
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14658 , H01L27/14683 , H01L27/14685 , H01L27/14689
摘要： A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens.
摘要翻译：一种制造固态成像装置的方法，包括：在硅衬底中形成光传感器部分; 在所述硅衬底上形成布线部分; 将另一基板接合到所述布线部分上; 响应于另一衬底接合到所述布线部分而移除所述衬底; 并且在硅衬底上依次形成抗反射涂层，在抗反射涂层上形成滤色器，以及片上透镜。

92. 发明申请

US20120104479A1 SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20120104479A1
公开(公告)日：2012-05-03
申请号：US13349149
申请日：2012-01-12
申请人： Takuji Matsumoto , Tetsuji Yamaguchi , Keiji Tatani , Yutaka Nishimura , Kazuichiro Itonaga , Hiroyuki Mori , Norihiro Kubo , Fumihiko Koga , Shinichiro Izawa , Susumu Ooki
发明人： Takuji Matsumoto , Tetsuji Yamaguchi , Keiji Tatani , Yutaka Nishimura , Kazuichiro Itonaga , Hiroyuki Mori , Norihiro Kubo , Fumihiko Koga , Shinichiro Izawa , Susumu Ooki
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14612 , H01L27/14625 , H01L27/14643
摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要翻译：固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

93. 发明授权

US08163468B2 Method of reducing photoresist defects during fabrication of a semiconductor device 有权
标题翻译：在半导体器件制造期间减少光致抗蚀剂缺陷的方法
公开(公告)号：US08163468B2
公开(公告)日：2012-04-24
申请号：US12045373
申请日：2008-03-10
申请人： Yoshiki Hishiro , Lijing Gou , Scott E. Sills , Hiroyuki Mori , Paul D. Shirley , Troy V. Gugel , Adam L. Olson
发明人： Yoshiki Hishiro , Lijing Gou , Scott E. Sills , Hiroyuki Mori , Paul D. Shirley , Troy V. Gugel , Adam L. Olson
IPC分类号： G03F7/26
CPC分类号： G03F7/7065 , G03F7/423
摘要： Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.
摘要翻译：描述了在半导体器件制造期间减少或消除水印型缺陷，并且可以包括使用若干实施例之一来处理光致抗蚀剂。在一些实施例中，通过施加和去除牺牲外涂层来调节光致抗蚀剂表面来减少/消除缺陷形成的倾向。在其它实施例中，通过在显影后处理期间将光致抗蚀剂表面暴露于缺陷剥离材料来减少/消除现有缺陷。

94. 发明申请

US20110218754A1 METHOD FOR SUPPORTING ANALYTICAL WORK OF SOLDER PRINTING STATE AND SOLDER PRINTING INSPECTION MACHINE 审中-公开
标题翻译：支持印刷机和焊机印刷检验机分析工作的方法
公开(公告)号：US20110218754A1
公开(公告)日：2011-09-08
申请号：US13033926
申请日：2011-02-24
申请人： Hiroyuki Mori
发明人： Hiroyuki Mori
IPC分类号： G06F19/00
CPC分类号： H05K3/1216 , G01B11/00 , G01B11/06 , G01B11/28 , H05K3/225 , H05K13/083 , H05K2203/163
摘要： In a solder printing inspection machine, an identification code and an inspection time of an inspection target board are accumulated in a memory. The accumulated data, whose identification code is matched with that of the current inspection target board, is searched while the accumulated data is traced back one by one. When the corresponding board is found, it is recognized that the board is extracted because of the defective board and the inspection target board is the reintroduced board that was previously extracted. A graph, in which pieces of information expressing the pieces of quality of the boards are arrayed in time series, is produced based on each time of inspection result and the graph is displayed on a monitor. In the pieces of data included in the graph, the data corresponding to the board that is recognized as the reintroduction is explicitly shown by a letter “R”.
摘要翻译：在焊锡印刷检查机中，将检查对象板的识别码和检查时间累积在存储器中。在累积数据逐个追溯的同时搜索其识别码与当前检查对象板的识别码相匹配的累积数据。当发现对应的电路板时，由于缺陷电路板被认为是提取电路板，检查目标板是先前提取的再导入板。基于检查结果的每个时间产生表示时间序列中的表示质量的信息的图形，并且将图表显示在监视器上。在图中包含的数据中，与被识别为重新引入的板对应的数据明确地用字母“R”表示。

95. 发明申请

US20110102620A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 有权
标题翻译：固态成像装置，其制造方法，相机和电子装置
公开(公告)号：US20110102620A1
公开(公告)日：2011-05-05
申请号：US12910068
申请日：2010-10-22
申请人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N5/228 , H01L31/06 , H01L31/18 , H03F3/08 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要翻译：提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

96. 发明授权

US07847897B2 Optical compensation film and liquid crystal display 有权
标题翻译：光学补偿膜和液晶显示器
公开(公告)号：US07847897B2
公开(公告)日：2010-12-07
申请号：US11088993
申请日：2005-03-24
申请人： Junichi Hirakata , Kentaro Toyooka , Hiroyuki Mori
发明人： Junichi Hirakata , Kentaro Toyooka , Hiroyuki Mori
IPC分类号： G02F1/1335
CPC分类号： G02F1/133632
摘要： To provide a liquid crystal display, particularly TN type liquid crystal display capable of remarkably improving brightness inversion resistance at a high contrast with a simple configuration and an optical compensation film which realizes the aforementioned properties, the liquid crystal display includes a pair of polarizing plates, each of the polarizing plates being disposed on an outer side of a liquid crystal layer having a twisted structure, the liquid crystal layer being disposed between substrates facing to each other, at least one of the substrates having an electrode, each of the polarizing plates including a polarizing film, a protective film, and an optical compensation film, wherein the optical compensation film includes a compound having a discotic structure unit, and the compound having a discotic structure unit is aligned such that the average alignment direction of the molecular major axis of the discotic structure unit at each side of the upper and lower optical compensation films facing to the polarizing film cross each other at an angle of not greater than the crossing angle of absorption axes of the pair of polarizing plates.
摘要翻译：为了提供液晶显示器，特别是能够以简单的结构显着提高高对比度的亮度反转电阻的TN型液晶显示器和实现上述性能的光学补偿膜，液晶显示器包括一对偏振片，每个偏振片设置在具有扭曲结构的液晶层的外侧上，液晶层设置在彼此面对的基板之间，至少一个基板具有电极，每个偏振片包括偏振膜，保护膜和光学补偿膜，其中光学补偿膜包括具有盘状结构单元的化合物，并且具有盘状结构单元的化合物被排列成使得分子长轴的平均取向方向上，下光学胶片两边的盘状结构单元面对偏振膜的绝缘膜以不大于该对偏振片的吸收轴的交叉角度的角度交叉。

97. 发明申请

US20100025569A1 SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20100025569A1
公开(公告)日：2010-02-04
申请号：US12509990
申请日：2009-07-27
申请人： Takuji Matsumoto , Tetsuji Yamaguchi , Keiji Tatani , Yutaka Nishimura , Kazuichiro Itonaga , Hiroyuki Mori , Norihiro Kubo , Fumihiko Koga , Shinichiro Izawa , Susumu Ooki
发明人： Takuji Matsumoto , Tetsuji Yamaguchi , Keiji Tatani , Yutaka Nishimura , Kazuichiro Itonaga , Hiroyuki Mori , Norihiro Kubo , Fumihiko Koga , Shinichiro Izawa , Susumu Ooki
IPC分类号： H01L27/00 , H01L31/112 , H01L21/28
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14612 , H01L27/14625 , H01L27/14643
摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要翻译：固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

98. 发明授权

US07646047B2 Solid-state imaging device and method for manufacturing the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07646047B2
公开(公告)日：2010-01-12
申请号：US10978754
申请日：2004-11-01
申请人： Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
发明人： Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
IPC分类号： H01L31/062
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14658 , H01L27/14683 , H01L27/14685 , H01L27/14689
摘要： The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer. Light enters from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. The photo sensor portion includes sensors configured to convert the light into signals representing an image. Each of the sensors includes a relatively highly doped first conductivity type region adjacent the front surface side of the silicon layer and serving as a charge storage region, a first relatively lightly doped second conductivity type region extending from the charge storage region toward the rear surface side of the silicon layer and serving as a photo sensitive region, a second relatively highly doped second conductivity type region extending from the front surface side of the silicon layer toward the rear surface side of the silicon layer and serving as a floating diffusion region, and a relatively lightly doped region of the first conductivity type between the floating diffusion region and the charge storage region and under one of the at least one read out gate electrode and serving as a charge read out region.
摘要翻译：固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层前表面侧的布线层。光从与硅层的前表面侧相反的背面侧入射，硅层4的厚度为10μm以下。光传感器部分包括被配置为将光转换成表示图像的信号的传感器。每个传感器包括与硅层的前表面侧相邻并且用作电荷存储区域的相对高掺杂的第一导电类型区域，从电荷存储区域朝向后表面侧延伸的第一相对轻掺杂的第二导电类型区域的硅层，作为光敏区域，从硅层的表面侧朝向硅层的背面侧延伸并作为浮动扩散区域的第二相对高掺杂的第二导电类型区域，以及在浮动扩散区域和电荷存储区域之间以及至少一个读出栅极电极之一处并且用作电荷读出区域的第一导电类型的相对轻掺杂区域。

99. 发明授权

US07619839B2 Lens barrel and image capturing apparatus 失效
标题翻译：镜筒和摄像装置
公开(公告)号：US07619839B2
公开(公告)日：2009-11-17
申请号：US11825127
申请日：2007-07-03
申请人： Kazuhiro Hattori , Hiroyuki Mori
发明人： Kazuhiro Hattori , Hiroyuki Mori
IPC分类号： G02B7/02
CPC分类号： G02B7/102
摘要： The present invention may provide a lens barrel which may include a guide shaft, and a movable lens frame. The barrel may be with an image capturing optical system disposed therein. The guide shaft may be disposed in the barrel and may extend parallel to the optical axis of the image capturing optical system. The movable lens frame may be reciprocally movable along the guide shaft in the barrel and holding lenses of the image capturing optical system. The barrel may include a wall supporting the guide shaft. The wall may include a light shield member projecting therefrom along the guide shaft in covering relation to a surface of the guide shaft which faces the optical axis.
摘要翻译：本发明可以提供一种镜筒，其可以包括导向轴和可移动透镜框。枪管可以具有设置在其中的摄像光学系统。引导轴可以设置在镜筒中并且可以平行于图像拍摄光学系统的光轴延伸。可移动透镜框架可以沿着镜筒中的引导轴和摄像光学系统的保持透镜往复移动。枪管可以包括支撑引导轴的壁。壁可以包括沿着导向轴从其突出的遮光构件，该遮光构件与导向轴的面向光轴的表面相关。

100. 发明申请

US20090279617A1 Signal transmission circuit 有权
标题翻译：信号传输电路
公开(公告)号：US20090279617A1
公开(公告)日：2009-11-12
申请号：US12453323
申请日：2009-05-07
申请人： Hiroyuki Mori , Norio Sanma , Yoshihiko Ozeki , Kazuyoshi Nagase
发明人： Hiroyuki Mori , Norio Sanma , Yoshihiko Ozeki , Kazuyoshi Nagase
IPC分类号： H04L25/02 , H04B3/00
CPC分类号： H04B3/04 , H04L25/0278
摘要： A signal transmission circuit is capable of reducing distortion that occurs during signal transmission. A digital output signal is transmitted from a terminal to a signal line via an output buffer circuit and an output impedance unit. The terminal is connected to an impedance variation unit via an impedance control unit. The impedance variation unit designates an impedance for terminating the signal line when the output data is changed from a high level H to a low level. A reflection occurring on the signal line can be prevented and a waveform distortion can be suppressed.
摘要翻译：信号传输电路能够减少在信号传输期间发生的失真。数字输出信号经由输出缓冲电路和输出阻抗单元从终端发送到信号线。端子经由阻抗控制单元连接到阻抗变化单元。当输出数据从高电平H变为低电平时，阻抗变化单元指定用于终止信号线的阻抗。可以防止在信号线上发生的反射，并且可以抑制波形失真。

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