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91. 发明授权

US07899643B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07899643B2
公开(公告)日：2011-03-01
申请号：US11935790
申请日：2007-11-06
申请人： Makoto Saen , Kenichi Osada , Tetsuya Yamada , Yusuke Kanno , Satoshi Misaka
发明人： Makoto Saen , Kenichi Osada , Tetsuya Yamada , Yusuke Kanno , Satoshi Misaka
IPC分类号： G01K1/12 , G06F19/00
CPC分类号： G06F1/3228 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit device which consumes less power and enables real-time processing. The semiconductor integrated circuit device includes thermal sensors which detect temperature and determine whether the detection result exceeds reference values and output the result, and a control block capable of controlling the operations of arithmetic blocks based on the output signals of the thermal sensors. The control block returns to an operation state from a suspended state with an interrupt signal based on the output signals of the thermal sensors and determines the operation conditions of the arithmetic blocks to ensure that the temperature conditions of the arithmetic blocks are satisfied. Thereby, power consumption is reduced and real-time processing efficiency is improved.
摘要翻译：一种半导体集成电路器件，其消耗较少功率并实现实时处理。半导体集成电路装置包括检测温度并确定检测结果是否超过参考值并输出结果的热传感器，以及能够基于热传感器的输出信号来控制运算块的操作的控制块。控制块基于热传感器的输出信号从具有中断信号的挂起状态返回到操作状态，并且确定运算块的操作条件，以确保运算块的温度条件得到满足。从而降低了功耗，提高了实时处理效率。

92. 发明授权

US07812628B2 Method of on-chip current measurement and semiconductor IC 失效
标题翻译：片上电流测量方法和半导体IC
公开(公告)号：US07812628B2
公开(公告)日：2010-10-12
申请号：US11956122
申请日：2007-12-13
申请人： Kazuo Otsuga , Tetsuya Yamada , Kenichi Osada , Yusuke Kanno
发明人： Kazuo Otsuga , Tetsuya Yamada , Kenichi Osada , Yusuke Kanno
IPC分类号： G01R31/26
CPC分类号： G01R19/0092 , Y10T307/406
摘要： A semiconductor integrated circuit is constituted to include a circuit block having a predetermined function, a power switch capable of supplying an operating power to the circuit block, and a current measuring circuit for obtaining a current flowing to the circuit block based on a voltage between terminals of the power switch in a state in which the power switch is turned on and an on-resistance of the power switch. The current flowing to the circuit block is obtained based on the voltage between terminals of the power switch in the state in which the power switch is turned on and the on-resistance of the power switch. Thus, it is possible to measure a current of the circuit block in a state in which a chip is normally operated.
摘要翻译：半导体集成电路被构成为包括具有预定功能的电路块，能够向电路块提供工作电力的电源开关，以及电流测量电路，用于根据端子之间的电压获得流向电路块的电流电源开关处于电源开关接通的状态和电源开关的导通电阻。基于电源开关接通状态和电源开关的导通电阻之间的电源开关电压之间的电流可以获得流向电路块的电流。因此，可以在芯片正常工作的状态下测量电路块的电流。

93. 发明授权

US07755148B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07755148B2
公开(公告)日：2010-07-13
申请号：US12429024
申请日：2009-04-23
申请人： Yusuke Kanno , Kenichi Yoshizumi
发明人： Yusuke Kanno , Kenichi Yoshizumi
IPC分类号： H01L27/00
CPC分类号： H03K19/0016 , H01L27/0207 , H01L27/11807
摘要： Logic LSI includes first power domains PD1 to PD4, thick-film power switches SW1 to SW4, and power switch controllers PSWC1 to PSWC4. The thick-film power switches are formed by thick-film power transistors manufactured in a process common to external input/output circuits I/O. The first power domains include second power domains SPD11 to SPD42 including logic blocks, control circuit blocks SCB1 to SCB4, and thin-film power switches SWN11 to SWN42 that are connected to the thick-film power switches via virtual ground lines VSSM1 to VSSM4, and formed by thin-film power transistors manufactured in a process common to the logic blocks. In this way, power switches having different thickness of gate insulating films from one another are vertically stacked so as to be in a hierarchical structure, and each power switch is individually controlled by a power switch controller and a control circuit block correspondingly to each mode.
摘要翻译：逻辑LSI包括第一电源域PD1至PD4，厚膜电源开关SW1至SW4，以及电源开关控制器PSWC1至PSWC4。厚膜功率开关由在外部输入/输出电路I / O公用的工艺中制造的厚膜功率晶体管形成。第一电源域包括经由虚拟接地线VSSM1至VSSM4连接到厚膜电源开关的包括逻辑块的第二电源域SPD11至SPD42，控制电路块SCB1至SCB4和薄膜电源开关SWN11至SWN42，以及由在逻辑块公用的工艺中制造的薄膜功率晶体管形成。以这种方式，具有彼此不同的栅绝缘膜厚度的电源开关被垂直堆叠以便处于分层结构，并且每个电源开关由对应于每个模式的电源开关控制器和控制电路块分别控制。

94. 发明申请

US20080143184A1 METHOD OF ON-CHIP CURRENT MEASUREMENT AND SEMICONDUCTOR IC 失效
标题翻译：片上电流测量方法和半导体IC
公开(公告)号：US20080143184A1
公开(公告)日：2008-06-19
申请号：US11956122
申请日：2007-12-13
申请人： Kazuo OTSUGA , Tetsuya Yamada , Kenichi Osada , Yusuke Kanno
发明人： Kazuo OTSUGA , Tetsuya Yamada , Kenichi Osada , Yusuke Kanno
IPC分类号： H02J1/00 , G01R19/00
CPC分类号： G01R19/0092 , Y10T307/406
摘要： A semiconductor integrated circuit is constituted to include a circuit block having a predetermined function, a power switch capable of supplying an operating power to the circuit block, and a current measuring circuit for obtaining a current flowing to the circuit block based on a voltage between terminals of the power switch in a state in which the power switch is turned on and an on-resistance of the power switch. The current flowing to the circuit block is obtained based on the voltage between terminals of the power switch in the state in which the power switch is turned on and the on-resistance of the power switch. Thus, it is possible to measure a current of the circuit block in a state in which a chip is normally operated.
摘要翻译：半导体集成电路被构成为包括具有预定功能的电路块，能够向电路块提供工作电力的电源开关，以及电流测量电路，用于根据端子之间的电压获得流向电路块的电流电源开关处于电源开关接通的状态和电源开关的导通电阻。基于电源开关接通状态和电源开关的导通电阻之间的电源开关电压之间的电流可以获得流向电路块的电流。因此，可以在芯片正常工作的状态下测量电路块的电流。

95. 发明申请

US20080114967A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20080114967A1
公开(公告)日：2008-05-15
申请号：US11935790
申请日：2007-11-06
申请人： Makoto Saen , Kenichi Osada , Tetsuya Yamada , Yusuke Kanno , Satoshi Misaka
发明人： Makoto Saen , Kenichi Osada , Tetsuya Yamada , Yusuke Kanno , Satoshi Misaka
IPC分类号： G06F9/302
CPC分类号： G06F1/3228 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor integrated circuit device which consumes less power and enables real-time processing. The semiconductor integrated circuit device comprises: thermal sensors which can detect temperature, determine whether the detection result exceeds each of the above reference values and output the result; and a control block capable of controlling the operations of arithmetic blocks based on the output signals of the thermal sensors, wherein the control block returns to an operation state from a suspended state with an interrupt signal based on the output signals of the thermal sensors and determines the operation conditions of the arithmetic blocks to ensure that the temperature conditions of the arithmetic blocks are satisfied. Thereby, power consumption is reduced and real-time processing efficiency is improved.
摘要翻译：提供了一种半导体集成电路器件，其消耗较少功率并实现实时处理。半导体集成电路装置包括：可以检测温度的热传感器，确定检测结果是否超过上述参考值，并输出结果; 以及控制块，其能够基于所述热传感器的输出信号来控制运算块的运算，其中，所述控制块基于所述热传感器的输出信号，利用中断信号从暂停状态返回到运行状态，并且确定运算块的操作条件，以确保运算块的温度条件得到满足。从而降低了功耗，提高了实时处理效率。

96. 发明授权

US06519195B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US06519195B2
公开(公告)日：2003-02-11
申请号：US09818509
申请日：2001-03-28
申请人： Yusuke Kanno , Kiyoo Itoh
发明人： Yusuke Kanno , Kiyoo Itoh
IPC分类号： G11C700
CPC分类号： G11C7/18 , G11C11/405 , G11C11/4097
摘要： A semiconductor integrated circuit is disclosed, in which a memory is activated at high speed in commensurate with a high-speed logic circuit mounted with the memory in order to reduce the cost using a DRAM of a 3-transistor cell requiring no capacitor. A pair of data lines connected with a plurality of memory cells having the amplification function are set to different precharge voltage values, thereby eliminating the need of a dummy cell. The elimination of the need of the dummy cell unlike in the conventional DRAM circuit using a gain cell reduces both the required space and the production cost. A hierarchical structure of the data lines makes a high-speed operation possible. Also, a DRAM circuit can be fabricated through a fabrication process matched with an ordinary logic element.
摘要翻译：公开了一种半导体集成电路，其中存储器以与安装有存储器的高速逻辑电路相当的高速度被激活，以便使用不需要电容器的3晶体管单元的DRAM来降低成本。与具有放大功能的多个存储单元连接的一对数据线被设置为不同的预充电电压值，从而不需要虚设单元。与使用增益单元的常规DRAM电路不同，消除虚设电池的需要减少了所需空间和生产成本。数据线的层次结构使得高速操作成为可能。此外，可以通过与普通逻辑元件匹配的制造工艺来制造DRAM电路。

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