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91. 发明授权

US07663578B2 Semiconductor device, display device and electronic device 有权
标题翻译：半导体器件，显示器件和电子器件
公开(公告)号：US07663578B2
公开(公告)日：2010-02-16
申请号：US11620345
申请日：2007-01-05
申请人： Hiroyuki Miyake
发明人： Hiroyuki Miyake
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G2300/0857 , G09G2310/0251 , G09G2310/0262 , G09G2320/029 , G09G2320/041 , G09G2320/043
摘要： A potential which is applied to a gate electrode of a driving transistor in accordance with an emission state or a non-emission state of a light-emitting element fluctuates due to noise or leakage from a selection transistor, or the like, which causes a problem in that the driving transistor cannot turn on or off normally and malfunctions. The present invention includes a transistor connected to a light-emitting element, a power source line, a scan line, a memory circuit, and a switching circuit, in which the transistor controls light emission or non light emission of the light-emitting element, and the switching circuit controlled by the scan line conducts switching between the transistor, and the memory circuit and the power source line, and applies an input potential to the transistor.
摘要翻译：根据发光元件的发光状态或非发光状态施加到驱动晶体管的栅电极的电位由于选择晶体管等的噪声或泄漏而波动，这导致问题因为驱动晶体管不能正常导通或断开，故障。本发明包括连接到发光元件的晶体管，电源线，扫描线，存储器电路和开关电路，其中晶体管控制发光元件的发光或非发光，并且由扫描线控制的开关电路导通晶体管与存储器电路与电源线之间的切换，并向晶体管施加输入电位。

92. 发明授权

US07656380B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07656380B2
公开(公告)日：2010-02-02
申请号：US09970929
申请日：2001-10-05
申请人： Jun Koyama , Tomoaki Atsumi , Hiroyuki Miyake
发明人： Jun Koyama , Tomoaki Atsumi , Hiroyuki Miyake
IPC分类号： G09G3/36 , G11C19/00
CPC分类号： G09G3/3688 , G09G3/3677 , G09G5/02 , G09G2310/0283 , G09G2310/0289 , G09G2330/021 , H01L27/12 , H01L27/1214
摘要： This invention provides a driving circuit for a display device, for accomplishing low power consumption by use of a level shifter capable of reliably converting signals having low voltage amplitude. A source signal line driving circuit is divided into a plurality of units. Pulses outputted from a shift register, etc, are used to execute ON/OFF control of the operation of a current supply source to the level shifter of each divided unit. The supply of the current to the level shifter is suspended in the stage not containing the circuit that outputs the pulses, but is made to only the unit including the shift register of the operating stage. In consequence, low power consumption can be achieved.
摘要翻译：本发明提供一种用于显示装置的驱动电路，用于通过使用能够可靠地转换具有低电压幅度的信号的电平转换器来实现低功耗。源极信号线驱动电路被分成多个单元。从移位寄存器等输出的脉冲用于对每个分割单元的电平移位器执行电流源的操作的ON / OFF控制。向电平移位器的电流的供给被暂停在不包含输出脉冲的电路的级中，但是仅被构成包括操作级的移位寄存器的单元。因此，可以实现低功耗。

93. 发明申请

US20090257283A1 METHOD FOR DELETING DATA FROM NAND TYPE NONVOLATILE MEMORY 有权
标题翻译：从NAND型非易失性存储器中删除数据的方法
公开(公告)号：US20090257283A1
公开(公告)日：2009-10-15
申请号：US12491395
申请日：2009-06-25
申请人： Mitsuaki Osame , Hiroyuki Miyake , Aya Miyazaki , Shunpei Yamazaki
发明人： Mitsuaki Osame , Hiroyuki Miyake , Aya Miyazaki , Shunpei Yamazaki
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： G11C16/14 , G11C8/10 , G11C16/0483 , G11C16/08 , H01L21/28273 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11546
摘要： To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.
摘要翻译：作为从NAND型非易失性存储器中删除数据的方法，提供一种释放已经注入到非易失性存储元件的电荷累积层中而不使用诸如p阱或n阱的衬底端子的电荷的方法。在从NAND型非易失性存储器中删除数据的方法中，通过将第一电位施加到位线和源极线，将第二电位施加到控制栅极来释放存储在第一非易失性存储元件的电荷累积层中的电荷以及与第二电位不同的第三电位连接到第二非易失性存储元件的控制栅极。

94. 发明申请

US20070230254A1 Method for deleting data from NAND type nonvolatile memory 有权
标题翻译：从NAND型非易失性存储器中删除数据的方法
公开(公告)号：US20070230254A1
公开(公告)日：2007-10-04
申请号：US11716672
申请日：2007-03-12
申请人： Mitsuaki Osame , Hiroyuki Miyake , Aya Miyazaki , Shunpei Yamazaki
发明人： Mitsuaki Osame , Hiroyuki Miyake , Aya Miyazaki , Shunpei Yamazaki
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C16/14 , G11C8/10 , G11C16/0483 , G11C16/08 , H01L21/28273 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11546
摘要： To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.
摘要翻译：作为从NAND型非易失性存储器中删除数据的方法，提供一种释放已经注入到非易失性存储元件的电荷累积层中而不使用诸如p阱或n阱的衬底端子的电荷的方法。在从NAND型非易失性存储器中删除数据的方法中，通过将第一电位施加到位线和源极线，将第二电位施加到控制栅极来释放存储在第一非易失性存储元件的电荷累积层中的电荷以及与第二电位不同的第三电位连接到第二非易失性存储元件的控制栅极。

95. 发明申请

US20070109247A1 Liquid Crystal Display Device 有权
标题翻译：液晶显示装置
公开(公告)号：US20070109247A1
公开(公告)日：2007-05-17
申请号：US11622510
申请日：2007-01-12
申请人： Jun KOYAMA , Tomoaki Atsumi , Hiroyuki Miyake
发明人： Jun KOYAMA , Tomoaki Atsumi , Hiroyuki Miyake
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3677 , G09G3/3688 , G09G2300/0809 , G09G2300/0828 , G09G2300/0842 , G09G2300/0857
摘要： A liquid crystal display device with low power consumption is provided. In the liquid crystal display device having a source signal line driver circuit, a gate signal line driver circuit, a DAC controller, and a pixel portion and performing an image display using an n-bit (n is a natural number, n≧2) digital image signal, one pixel has memory circuits for storing an n-bit digital image signal and a D/A converter, and the n-bit digital image signal for one frame can be stored in the pixel. In case of a static image display, the image signal stored in the memory circuits is read out every frame to perform the display, and thus, only a DAC controller is driven during the display. Therefore, this contributes to a reduction of the power consumption of the entire liquid crystal display device.
摘要翻译：提供具有低功耗的液晶显示装置。在具有源极信号线驱动电路，栅极信号线驱动电路，DAC控制器和像素部分的液晶显示装置中，使用n位（n为自然数，n> = 2）进行图像显示）数字图像信号，一个像素具有用于存储n位数字图像信号和D / A转换器的存储电路，并且用于一帧的n位数字图像信号可以存储在像素中。在静态图像显示的情况下，每帧读出存储在存储器电路中的图像信号以进行显示，因此在显示期间仅驱动DAC控制器。因此，这有助于降低整个液晶显示装置的功耗。

96. 发明授权

US07166863B2 Semiconductor element, semiconductor device, electronic device, TV set and digital camera 有权
标题翻译：半导体元件，半导体器件，电子设备，电视机和数码相机
公开(公告)号：US07166863B2
公开(公告)日：2007-01-23
申请号：US10941823
申请日：2004-09-16
申请人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa , Yutaka Shionoiri , Hiroyuki Miyake
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L29/78696
摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
摘要翻译：提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域区域，其中导电区域被设置成跨过线性条纹图案延伸的绝缘膜。

97. 发明申请

US20060290380A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20060290380A1
公开(公告)日：2006-12-28
申请号：US11463356
申请日：2006-08-09
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K19/094
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/3208 , G09G3/3275 , G09G3/3648 , G09G2300/08 , G09G2310/0218 , G09G2310/0267 , G09G2310/027 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , H01L27/1214 , H01L27/3248 , H01L29/78621 , H01L51/5218 , H01L51/5221 , H01L2029/7863 , H01L2251/5315 , H03K19/01714
摘要： A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT )152), and a larger load driving capability is obtained.
摘要翻译：提供了由单极性TFT构成的具有大负载驱动能力的电路。通过形成在TFT（152）的栅电极和输出电极之间的电容器（154），TFT（152）的栅电极的电位通过引导带增加并相对于输入信号的正常输出由于TFT阈值而不产生输出信号的幅度衰减。此外，形成在TFT（153）的栅电极和输出电极之间的电容器（155）补偿增加TFT的栅极电位152），并且获得更大的负载驱动能力。

98. 发明申请

US20060280279A1 Pulse Output Circuit, Shift Register and Electronic Equipment 审中-公开
标题翻译：脉冲输出电路，移位寄存器和电子设备
公开(公告)号：US20060280279A1
公开(公告)日：2006-12-14
申请号：US11467022
申请日：2006-08-24
申请人： Shou Nagao , Yoshifumi Tanada , Yutaka Shionoiri , Hiroyuki Miyake
发明人： Shou Nagao , Yoshifumi Tanada , Yutaka Shionoiri , Hiroyuki Miyake
IPC分类号： G11C19/00
CPC分类号： G11C19/28 , G09G3/3688 , G09G2310/0275 , G11C19/00
摘要： A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node α is raised. When the potential of the node α reaches (VDD−VthN), the node α becomes in a floating state. Accordingly, a TFT 105 is turned ON and a potential of an output node is raised as a clock signal becomes High level. On the other hand, a potential of a gate electrode of the TFT 105 is further raised due to an operation of a capacitance means 107 as the potential of the output node is raised, so that the potential of the gate electrode of the TFT 105 becomes higher than (VDD+VthN). Thus, the potential of the output node is raised to VDD without causing a voltage drop due to a threshold voltage of the TFT 105. An output at the subsequent stage is then inputted to a TFT 103 to turn the TFT 103 ON, while the potential of the node α of TFTs 102 and 106 is dropped to turn the TFT 105 OFF. As a result, the potential of the output node becomes Low level.
摘要翻译：一种显示装置的驱动电路，其包括单导电类型的TFT并输出具有正常振幅的输出信号。一个脉冲被输入到TFT101和104，使TFT导通，并且提高节点α的电位。当节点α的电位达到（VDD-VthN）时，节点α变为浮动状态。因此，随着时钟信号变为高电平，TFT 105导通，输出节点的电位升高。另一方面，随着输出节点的电位升高，由于电容装置107的操作，TFT 105的栅电极的电位进一步上升，使得TFT 105的栅电极的电位变为高于（VDD + VthN）。因此，输出节点的电位升高到VDD，而不会由于TFT 105的阈值电压引起电压降。然后，随后阶段的输出被输入到TFT 103以使TFT 103导通，同时TFT 102和106的节点α的电位下降以使TFT 105关闭。结果，输出节点的电位变为低电平。

99. 发明申请

US20060274090A1 Display device, and computer, camera, portable information terminal device, image reproducing device, clock, mobile phone device and other electronic apparatuses using the display device 有权
标题翻译：显示装置，计算机，相机，便携式信息终端装置，图像再现装置，时钟，移动电话装置以及使用该显示装置的其他电子装置
公开(公告)号：US20060274090A1
公开(公告)日：2006-12-07
申请号：US11389092
申请日：2006-03-27
申请人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
发明人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
IPC分类号： G09G5/02
CPC分类号： G09G3/3258 , G09G3/2022 , G09G3/2025 , G09G3/2037 , G09G3/2092 , G09G5/399 , G09G2300/0417 , G09G2300/0443 , G09G2300/0857 , G09G2340/0414 , G09G2340/0421 , G09G2340/145 , G09G2360/02 , G09G2360/18
摘要： In a display device using a delta arrangement, in a case where a circuit of a large number of elements such as a static memory is arranged every pixel, a wire becomes complicated to cause wiring delay. A shape of a pixel electrode is formed polygonally to arrange in a case where the number of elements such as a static memory is large or in a case where an area of an element required to be included in a pixel is large in a delta arrangement. The shape of the pixel electrode is arranged in a polygon so that a wire along a pixel shape can be used. Even in a case of a pixel with a large number of elements, parasitic resistance of a wire and parasitic capacitance of a wire can be reduced so that wiring delay can be solved.
摘要翻译：在使用三角形排列的显示装置中，在每个像素布置诸如静态存储器等大量元件的电路的情况下，导线变得复杂，导致布线延迟。在诸如静态存储器的元件的数量大的情况下或者在像素中需要包括的元件的面积以三角形排列较大的情况下，像素电极的形状被多边形成。像素电极的形状被布置成多边形，使得可以使用沿着像素形状的线。即使在具有大量元件的像素的情况下，也可以减少导线的寄生电阻和布线的寄生电容，从而可以解决布线延迟。

100. 发明申请

US20060238221A1 Circuit having source follower and semiconductor device having the circuit 有权
公开(公告)号：US20060238221A1
公开(公告)日：2006-10-26
申请号：US11474938
申请日：2006-06-27
申请人： Hiroyuki Miyake , Yutaka Shionoiri
发明人： Hiroyuki Miyake , Yutaka Shionoiri
IPC分类号： H03K19/094
CPC分类号： G09G3/20 , G09G2310/0275 , H03F1/301 , H03F3/505
摘要： When a potential of a power supply line varies according to a flowing current, the gate-source voltage Vgs of a transistor also varies, leading to variations in the constant current between each source follower. In order to solve this problem, a potential Vb of the gate terminal of a transistor as a constant current source is changed in the same manner as a power supply line Vss which is connected to the source terminal of the transistor. Therefore, variations in the constant current are suppressed and variations in the output of the source followers are thus suppressed. In addition, by connecting the circuit having source followers to the output side of a signal line driver circuit, it can be prevented that luminance unevenness of a striped pattern is recognized in a display portion of a semiconductor device.

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