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91. 发明申请

US20110036726A1 GAS DECOMPOSITION APPARATUS AND METHOD FOR DECOMPOSING GAS 有权
标题翻译：气体分解装置和分解气体的方法
公开(公告)号：US20110036726A1
公开(公告)日：2011-02-17
申请号：US12936889
申请日：2009-04-02
申请人： Masatoshi Majima , Shinji Inazawa , Koji Nitta , Masahiro Yamakawa , Takayasu Sugihara , Yasuhiro Takeda , Yoshihiro Akahane , Takahiro Imai
发明人： Masatoshi Majima , Shinji Inazawa , Koji Nitta , Masahiro Yamakawa , Takayasu Sugihara , Yasuhiro Takeda , Yoshihiro Akahane , Takahiro Imai
IPC分类号： B01D53/32 , A61L9/00 , C25B9/16 , C25B9/08 , C25B11/06 , C25B11/03
CPC分类号： B01D53/326 , A61L9/012 , A61L9/014 , A61L9/16 , A61L2209/213 , A61L2209/22 , B01D53/32 , B01D53/8668 , B01D53/88 , B01D61/422 , B01D69/10 , B01D69/12 , B01D69/145 , B01D71/36 , B01D2251/11 , B01D2255/102 , B01D2255/9202 , B01D2257/7027 , B01D2257/90 , B01J35/0033
摘要： [Object] To provide a gas decomposition apparatus and a gas decomposition method in which no safety problems occur in spite of the application of a relatively high voltage between an anode and a cathode for the purpose of decomposing odorous gases of many types.[Solution] A catalytic electrode layer 6 that contains a catalyst and is porous; a counter electrode layer 7 that forms a pair with the catalytic electrode; and an electrolyte layer 15 that is sandwiched between the catalytic electrode and the counter electrode and has ion conductivity are included. The catalyst is held by the catalytic electrode in the form of being carried by a carrier containing a conductive material or the catalyst is directly carried by the catalytic electrode. A conductive material in the catalytic electrode, the conductive material being in contact with the catalyst, is not a noncovalent carbon material.
摘要翻译：提供一种气体分解装置和气体分解方法，其中为了分解多种类型的恶臭气体，尽管在阳极和阴极之间施加相对较高的电压，但不会出现安全问题。 [溶液]含有催化剂且为多孔的催化剂电极层6; 与催化电极形成一对的对电极层7; 并且包括夹在催化电极和对电极之间并具有离子传导性的电解质层15。该催化剂由催化电极保持，其形式是由含有导电材料的载体携带，或催化剂由催化电极直接携带。催化电极中的导电材料与导电材料接触不是非共价碳材料。

92. 发明授权

US07883775B2 Diamond film coated tool and process for producing the same 有权
标题翻译：金刚石薄膜涂层工具及其制造方法
公开(公告)号：US07883775B2
公开(公告)日：2011-02-08
申请号：US10566633
申请日：2003-11-12
申请人： Katsuo Kazahaya , Shigetaka Kawai , Yasushi Matsumoto , Keiji Ishibashi , Takahiro Imai
发明人： Katsuo Kazahaya , Shigetaka Kawai , Yasushi Matsumoto , Keiji Ishibashi , Takahiro Imai
IPC分类号： B32B9/00
CPC分类号： C23C16/27 , B23G5/06 , B23G2200/26 , B23G2225/08 , B23G2225/16 , B23G2225/28 , C23C16/0218 , Y10T428/30
摘要： The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool.A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.
摘要翻译：本发明提供了具有优异的切削性能，耐磨性，耐粘附性和工作表面粗糙度的金刚石涂层工具的组合以及制造这种工具的方法。一种金刚石涂层工具，包括在基底表面上形成的基底和金刚石涂层，其中所述基底由硬质合金或金属陶瓷制成，构成所述金刚石涂层的生长表面的金刚石晶粒的平均晶粒尺寸为约1.5 所述金刚石涂层具有约0.1微米至20微米的厚度，并且所述金刚石涂层的平均表面粗糙度Ra为约0.01微米至0.2微米。这种金刚石涂层工具可以通过将由硬质合金或金属陶瓷组成的基材渗碳并在其上生长金刚石涂层来获得。

93. 发明授权

US07863805B2 Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US07863805B2
公开(公告)日：2011-01-04
申请号：US11665472
申请日：2006-06-19
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02 , H01J9/02 , H01J1/62 , H01J63/04
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.
摘要翻译：可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。金刚石电子放电阴极至少在其一部分具有单晶金刚石。金刚石电子发射阴极具有包括锐化部分和加热部分的柱状。锐化部分具有电子发射部分。电子发射部分和加热部分由金刚石半导体形成，其由含有2×10 15 cm -3的p型杂质或以上的p型半导体形成。电子发射部分具有半导体。在电子发射阴极的表面上形成金属层。金属层至少存在于加热部的一部分。从电子发射部到最接近金属层末端的位置的距离为500μm。一对电流引入端子向加热部分供电以加热加热部分。引入的电子的一部分从电子发射部分发射。

94. 发明授权

US07615203B2 Single crystal diamond 有权
标题翻译：单晶钻石
公开(公告)号：US07615203B2
公开(公告)日：2009-11-10
申请号：US10584927
申请日：2005-05-26
申请人： Yoshiyuki Yamamoto , Kiichi Meguro , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Kiichi Meguro , Takahiro Imai
IPC分类号： C30B23/00 , C30B17/00 , B01J3/06 , B32B9/00 , D06N7/04 , H05H1/24 , H01L31/0312
CPC分类号： C30B25/105 , C30B25/20 , C30B29/04 , Y10T428/24355
摘要： A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 μm of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.
摘要翻译：通过气相合成生长的单晶金刚石，其中当被认为是两个相互垂直的线偏振光的合成的线偏振光照射一个主表面时，两个相互垂直的线偏振光束离开另一个的相位差在整个晶体上，相对侧的主表面最大为每100微米的晶体厚度不大于50nm。这种单晶金刚石迄今为止不具有大尺寸和高质量，并且具有在半导体器件基板中非常需要的特性，并且被应用于需要低应变的光学部件。

95. 发明授权

US07594830B2 Joint connector 有权
标题翻译：接头连接器
公开(公告)号：US07594830B2
公开(公告)日：2009-09-29
申请号：US12335385
申请日：2008-12-15
申请人： Masakazu Murakami , Takahiro Imai , Tamaki Takabayashi , Takenobu Yabu , Syougo Tomita , Seiichi Ueno , Katsunori Takeda
发明人： Masakazu Murakami , Takahiro Imai , Tamaki Takabayashi , Takenobu Yabu , Syougo Tomita , Seiichi Ueno , Katsunori Takeda
IPC分类号： H01R13/502
CPC分类号： H01R13/514 , H01R4/185 , H01R13/6658 , H01R31/08 , H01R2201/26
摘要： A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.
摘要翻译：根据本发明的接头连接器设置有电路板，阳连接器，具有以预定间隔设置在电路板上的阳端子，并且沿一个方向和与该一个方向交叉的方向竖立，阳端子被选择性地连接通过铜箔电路和阴连接器，其中，阴连接器元件各自具有插入并互锁在阴端子保持器中的阴端子，其中阳连接器和阴连接器彼此配合。通过实现容易的电线连接和分支，可实现电线连接的成本降低和工作效率的提高。

96. 发明申请

US20090082571A1 Intermediates of 2-substituted carbapenem derivatives and process for production thereof 审中-公开
标题翻译： 2-取代的碳青霉烯衍生物的中间体及其制备方法
公开(公告)号：US20090082571A1
公开(公告)日：2009-03-26
申请号：US12289750
申请日：2008-11-03
申请人： Toshiro Sasaki , Takashi Ando , Takahiro Imai , Dai Kubota , Eiki Shitara , Kunio Atsumi
发明人： Toshiro Sasaki , Takashi Ando , Takahiro Imai , Dai Kubota , Eiki Shitara , Kunio Atsumi
IPC分类号： C07D513/04
CPC分类号： C07D513/04 , C07F9/6561 , Y02P20/55
摘要： The present invention relates to compounds represented by formula (1) and a process for producing the same. The use of these compounds can realize the production of carbapenem derivatives having potent antimicrobial activity and a wide antimicrobial spectrum in a safe and cost-effective manner.
摘要翻译：本发明涉及由式（1）表示的化合物及其制备方法。这些化合物的使用可以以安全和成本有效的方式实现具有有效抗微生物活性和广谱抗菌谱的碳青霉烯衍生物的生产。

97. 发明授权

US07481682B2 Joint connector 有权
公开(公告)号：US07481682B2
公开(公告)日：2009-01-27
申请号：US12026644
申请日：2008-02-06
申请人： Masakazu Murakami , Takahiro Imai , Tamaki Takabayashi , Takenobu Yabu , Syougo Tomita , Seiichi Ueno , Katsunori Takeda
发明人： Masakazu Murakami , Takahiro Imai , Tamaki Takabayashi , Takenobu Yabu , Syougo Tomita , Seiichi Ueno , Katsunori Takeda
IPC分类号： H01R13/502
CPC分类号： H01R13/514 , H01R4/185 , H01R13/6658 , H01R31/08 , H01R2201/26
摘要： A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.

98. 发明申请

US20080311023A1 Single Crystal Diamond 有权
标题翻译：单晶钻石
公开(公告)号：US20080311023A1
公开(公告)日：2008-12-18
申请号：US10584927
申请日：2005-05-26
申请人： Yoshiyuki Yamamoto , Kiichi Meguro , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Kiichi Meguro , Takahiro Imai
IPC分类号： C01B31/06
CPC分类号： C30B25/105 , C30B25/20 , C30B29/04 , Y10T428/24355
摘要： A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 μm of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.
摘要翻译：通过气相合成生长的单晶金刚石，其中当被认为是两个相互垂直的线偏振光的合成的线偏振光照射一个主表面时，两个相互垂直的线偏振光束离开另一个的相位差在整个晶体上，相对侧的主表面最大为每100微米的晶体厚度不大于50nm。这种单晶金刚石迄今为止不具有大尺寸和高质量，并且具有在半导体器件基板中非常需要的特性，并且被应用于需要低应变的光学部件。

99. 发明申请

US20080200075A1 JOINT CONNECTOR 有权
标题翻译：接头连接器
公开(公告)号：US20080200075A1
公开(公告)日：2008-08-21
申请号：US12026644
申请日：2008-02-06
申请人： Masakazu Murakami , Takahiro Imai , Tamaki Takabayashi , Takenobu Yabu , Syougo Tomita , Seiichi Ueno , Katsunori Takeda
发明人： Masakazu Murakami , Takahiro Imai , Tamaki Takabayashi , Takenobu Yabu , Syougo Tomita , Seiichi Ueno , Katsunori Takeda
IPC分类号： H01R13/502
CPC分类号： H01R13/514 , H01R4/185 , H01R13/6658 , H01R31/08 , H01R2201/26
摘要： A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.
摘要翻译：根据本发明的接头连接器设置有电路板，阳连接器，具有以预定间隔设置在电路板上的阳端子，并且沿一个方向和与该一个方向交叉的方向竖立，阳端子被选择性地连接通过铜箔电路和阴连接器，其中，阴连接器元件各自具有插入并互锁在阴端子保持器中的阴端子，其中阳连接器和阴连接器彼此配合。通过实现容易的电线连接和分支，可实现电线连接的成本降低和工作效率的提高。

100. 发明授权

US07413935B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07413935B2
公开(公告)日：2008-08-19
申请号：US11033259
申请日：2005-01-12
申请人： Takahiro Imai
发明人： Takahiro Imai
IPC分类号： H01L21/00
CPC分类号： H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/81801 , H01L2224/83192 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/18161 , H01L2924/19043 , H01L2924/00 , H01L2224/05599
摘要： A method of fabricating a semiconductor device includes hardening resin at a temperature that is less than or equal to the boiling point of the resin and until the hardening reaction ratio of the resin has reached at least 80%, the resin being disposed between a wiring board which has an interconnecting pattern and a semiconductor chip which has a plurality of electrodes and which is mounted on the wiring board in such a manner that the electrodes are in contact with the interconnecting pattern. A eutectic alloy joint is then formed between the electrodes and the interconnecting pattern.
摘要翻译：一种制造半导体器件的方法包括在小于或等于树脂沸点的温度下固化树脂，直到树脂的硬化反应比达到至少80％，树脂被布置在布线板其具有互连图案和具有多个电极并且以使得电极与互连图案接触的方式安装在布线板上的半导体芯片。然后在电极和互连图案之间形成共晶合金接头。

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