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91. 发明授权

US08416619B2 Magnetic memory with phonon glass electron crystal material 有权
标题翻译：具有声子玻璃电子晶体材料的磁记忆体
公开(公告)号：US08416619B2
公开(公告)日：2013-04-09
申请号：US13089538
申请日：2011-04-19
申请人： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
发明人： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
IPC分类号： G11C11/14
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
摘要翻译：磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。第一声子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。

92. 发明申请

US20120257446A1 UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT 有权
标题翻译：单极转子开关记忆单元
公开(公告)号：US20120257446A1
公开(公告)日：2012-10-11
申请号：US13527839
申请日：2012-06-20
申请人： Xiaohua Lou , Haiwen Xi
发明人： Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/16 , G11C11/14
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693 , Y10S977/933 , Y10S977/935
摘要： A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.
摘要翻译：存储单元包括电耦合到位线和字线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。二极管电耦合在磁性隧道结数据单元和字线或位线之间。电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。

93. 发明申请

US20120127785A1 Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array 有权
标题翻译：使用附近的单元格提供磁存储器阵列中的场辅助切换
公开(公告)号：US20120127785A1
公开(公告)日：2012-05-24
申请号：US12950673
申请日：2010-11-19
申请人： Andreas Karl Roelofs , Haiwen Xi
发明人： Andreas Karl Roelofs , Haiwen Xi
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/16
摘要： Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.
摘要翻译：将数据写入磁存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。根据各种实施例，通过所选择的磁存储器单元施加写入电流，以将所选择的单元的磁性进动启动到期望的磁状态。场辅助电流同时流过相邻的存储单元，以产生有助于所选择的单元进入所需磁状态的磁场。

94. 发明申请

US20120087175A1 Asymmetric Write Current Compensation 有权
标题翻译：非对称写电流补偿
公开(公告)号：US20120087175A1
公开(公告)日：2012-04-12
申请号：US13333598
申请日：2011-12-21
申请人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
发明人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
摘要翻译：一种用于补偿非易失性单元中不对称写入电流的装置和方法。单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐编程单元格

95. 发明授权

US08098541B2 Non-volatile memory with stray magnetic field compensation 有权
标题翻译：具有杂散磁场补偿的非易失性存储器
公开(公告)号：US08098541B2
公开(公告)日：2012-01-17
申请号：US13084774
申请日：2011-04-12
申请人： Dimitar Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
发明人： Dimitar Dimitrov , Olle Gunnar Heinonen , Dexin Wang , Haiwen Xi
IPC分类号： G11C8/00
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , H01L43/08
摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.
摘要翻译：一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

96. 发明申请

US20110260274A1 MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS 有权
标题翻译：具有正交磁化定向方向的参考层的磁性堆栈
公开(公告)号：US20110260274A1
公开(公告)日：2011-10-27
申请号：US13176029
申请日：2011-07-05
申请人： Yuankai Zheng , Zheng Gao , Wenzhong Zhu , Wonjoon Jung , Haiwen Xi
发明人： Yuankai Zheng , Zheng Gao , Wenzhong Zhu , Wonjoon Jung , Haiwen Xi
IPC分类号： H01L29/82
CPC分类号： H01F10/329 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L43/08
摘要： A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.
摘要翻译：磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

97. 发明申请

US20110242883A1 THERMALLY ASSISTED MULTI-BIT MRAM 有权
标题翻译：热辅助多位MRAM
公开(公告)号：US20110242883A1
公开(公告)日：2011-10-06
申请号：US13160969
申请日：2011-06-15
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C11/1675 , G11C11/5607
摘要： Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
摘要翻译：描述写入多位MRAM存储器单元的方法。该方法包括对多位（即多级）热辅助MRAM进行自检测写入。自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

98. 发明授权

US07881096B2 Asymmetric write current compensation 有权
标题翻译：不对称写入电流补偿
公开(公告)号：US07881096B2
公开(公告)日：2011-02-01
申请号：US12408996
申请日：2009-03-23
申请人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
发明人： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C17/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
摘要翻译：一种用于补偿非易失性单元中不对称写入电流的装置和方法。单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐编程单元格

99. 发明授权

US07826260B2 Spin-transfer torque memory self-reference read and write assist methods 有权
标题翻译：自转转矩存储器自参考读写辅助方法
公开(公告)号：US07826260B2
公开(公告)日：2010-11-02
申请号：US12372180
申请日：2009-02-17
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态磁隧道结数据单元是高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

100. 发明申请

US20100128520A1 NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES 有权
标题翻译：非易失性存储器，包括稳定结构
公开(公告)号：US20100128520A1
公开(公告)日：2010-05-27
申请号：US12502213
申请日：2009-07-13
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
IPC分类号： G11C11/14
CPC分类号： G11C11/161
摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.
摘要翻译：一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

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