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91. 发明授权

US06951764B2 Ferroelectric memory device with a conductive polymer layer and a method of formation 失效
标题翻译：具有导电聚合物层的铁电存储器件和形成方法
公开(公告)号：US06951764B2
公开(公告)日：2005-10-04
申请号：US10895184
申请日：2004-07-20
申请人： Ebrahim Andideh
发明人： Ebrahim Andideh
IPC分类号： G11C11/22 , H01L21/82 , H01L27/108 , H01L27/115 , H01L29/72 , H01L29/76 , H01L31/119
CPC分类号： G11C11/22 , H01L27/11502 , H01L28/60
摘要： A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a ferroelectric polymer layer formed on substantial portion of a first electrode layer, a thin layer of conductive ferroelectric polymer formed on a substantial portion of the ferroelectric polymer layer, where the ferroelectric polymer may be made conductive by doping with conductive nano-particles, and a second electrode layer formed on at least a portion of the carbon doped ferroelectric polymer layer.
摘要翻译：公开了铁电存储器件和形成方法。在一个具体实施例中，铁电存储器件包括形成在衬底上的第一电极层，形成在第一电极层的基本部分上的铁电聚合物层，形成在铁电聚合物层的大部分上的导电性强电介质聚合物薄层，其中铁电聚合物可以通过掺杂导电纳米颗粒而导电，以及形成在碳掺杂铁电聚合物层的至少一部分上的第二电极层。

92. 发明申请

US20050205907A1 Memory circuit with spacers between ferroelectric layer and electrodes 有权
标题翻译：存储电路与铁电层和电极之间的间隔物
公开(公告)号：US20050205907A1
公开(公告)日：2005-09-22
申请号：US10804795
申请日：2004-03-19
申请人： Mark Isenberger , Ebrahim Andideh
发明人： Mark Isenberger , Ebrahim Andideh
IPC分类号： H01L21/8246 , H01L27/115 , H01L29/76 , H01L29/78
CPC分类号： H01L27/11585 , H01L27/115 , H01L27/1159 , H01L29/78391
摘要： A memory circuit is provided with a spacer formed on a support surface and positioned adjacent to a first electrode surface of a first electrode. The memory circuit further includes a ferroelectric layer formed on the first electrode and the spacer.
摘要翻译：存储器电路设置有形成在支撑表面上并且邻近第一电极的第一电极表面定位的间隔件。存储电路还包括形成在第一电极和间隔物上的铁电层。

93. 发明申请

US20050183960A1 Polymer film metalization 审中-公开
公开(公告)号：US20050183960A1
公开(公告)日：2005-08-25
申请号：US11112287
申请日：2005-04-21
申请人： Ebrahim Andideh , Daniel Diana
发明人： Ebrahim Andideh , Daniel Diana
IPC分类号： C25D5/02 , C25D7/12 , H01L21/00 , H01L21/28 , H01L21/288 , H01L21/44 , H01L21/768 , H01L21/8242
CPC分类号： H01L21/288 , H01L21/76838 , H01L29/40111
摘要： Embodiments in accordance with the present invention eliminate the need for a subtractive metal patterning process to pattern the electrode above a ferroelectric polymer. Instead, a selective electroless deposition process is used. A conductive polymer is used as a seed layer for the electroless plating of the metal electrode. A cost saving is provided by eliminating the chemical costs associated with conventional resist removal processing. The methods also potentially eliminate the requirement for aggressive and environmentally unsafe chemical-based photoresist removal processes.

94. 发明申请

US20050139879A1 Ion implanting conductive electrodes of polymer memories 审中-公开
标题翻译：离子注入聚合物存储器的导电电极
公开(公告)号：US20050139879A1
公开(公告)日：2005-06-30
申请号：US10746073
申请日：2003-12-24
申请人： Daniel Diana , Hitesh Windlass , William Hicks , Timothy Lanfri , Michael Deangelis , Ebrahim Andideh
发明人： Daniel Diana , Hitesh Windlass , William Hicks , Timothy Lanfri , Michael Deangelis , Ebrahim Andideh
IPC分类号： H01L27/28 , H01L51/40 , H01L21/00 , H01L29/76
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0021
摘要： An electrode layer for a polymer memory may be implanted to increase the number of defects in the material. As a result, that same material may be utilized for the upper and lower electrodes. In particular, defects may be introduced into a TiOx layer within the electrode to match the work functions of the upper and lower electrodes.
摘要翻译：可以植入用于聚合物存储器的电极层以增加材料中的缺陷数量。结果，可以使用相同的材料用于上电极和下电极。特别地，可以将缺陷引入电极内的TiO 2层以匹配上电极和下电极的功函数。

95. 发明申请

US20050104106A1 Ferroelectric polymer memory with a thick interface layer 有权
标题翻译：铁电聚合物存储器，具有较厚的界面层
公开(公告)号：US20050104106A1
公开(公告)日：2005-05-19
申请号：US11015841
申请日：2004-12-17
申请人： Mark Richards , Daniel Diana , Hitesh Windlass , Wayne Ford , Ebrahim Andideh
发明人： Mark Richards , Daniel Diana , Hitesh Windlass , Wayne Ford , Ebrahim Andideh
IPC分类号： G03C5/00 , G11C13/00 , H01L21/00 , H01L21/336 , H01L29/94 , H01L31/113
CPC分类号： G11C13/00 , B82Y10/00
摘要： According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.
摘要翻译：根据本发明的一个方面，提供了存储器阵列和构造存储器阵列的方法。绝缘层形成在半导体衬底上。然后在绝缘层上形成第一金属叠层。第一金属叠层被蚀刻以形成第一金属线。在第一金属线和绝缘层之上形成聚合物层。聚合物层具有多个粗糙结构的表面。在聚合物层上形成第二金属叠层，其界面层比粗糙结构层的高度厚。然后蚀刻第二金属叠层以形成第二金属线。存储单元形成在第二金属线在第一金属线上延伸的地方。

96. 发明申请

US20050084985A1 METHODS AND APPARATUSES FOR PRODUCING A POLYMER MEMORY DEVICE 有权
标题翻译：用于生产聚合物存储器件的方法和装置
公开(公告)号：US20050084985A1
公开(公告)日：2005-04-21
申请号：US10688085
申请日：2003-10-17
申请人： Makarem Hussein , Ebrahim Andideh , Peter Moon , Daniel Diana
发明人： Makarem Hussein , Ebrahim Andideh , Peter Moon , Daniel Diana
IPC分类号： H01L21/00 , H01L27/115 , H01L29/76 , H01L31/119
CPC分类号： H01L27/11502 , H01L21/28291 , H01L28/55
摘要： Embodiments of the invention provide a method for producing ferroelectric polymer devices (FPMDs) employing conditions that avoid or reduce detrimental impact on the ferroelectric polymer film. For one embodiment, a damascene patterning metallization technique is used. For one embodiment a first metal layer is deposited on a substrate to form the bottom electrode for the FPMD. The first metal layer is capped with a selectively deposited diffusion barrier. A layer of ferroelectric polymer film is then deposited on the first conductive layer. The ferroelectric polymer film is planarized. A second metal layer is deposited on the ferroelectric polymer film layer to form the top electrode of the FPMD. The second metal layer is deposited such that the ferroelectric polymer film is not substantially degraded. For various alternative embodiments the various component processes may be accomplished at temperatures far below those employed in a conventional damascene patterning metallization process.
摘要翻译：本发明的实施方案提供了一种制备铁电聚合物器件（FPMD）的方法，该方法采用避免或减少对铁电聚合物膜的不利影响的条件。对于一个实施例，使用镶嵌图案化金属化技术。对于一个实施例，第一金属层沉积在基板上以形成FPMD的底部电极。第一金属层用选择性沉积的扩散阻挡层封盖。然后在第一导电层上沉积一层铁电聚合物膜。铁电聚合物膜被平坦化。第二金属层沉积在铁电聚合物膜层上以形成FPMD的顶电极。沉积第二金属层使得铁电聚合物膜基本上不劣化。对于各种替代实施例，可以在远低于常规镶嵌图案化金属化工艺中采用的温度下实现各种部件工艺。

97. 发明授权

US06765273B1 Device structure and method for reducing silicide encroachment 失效
公开(公告)号：US06765273B1
公开(公告)日：2004-07-20
申请号：US09115405
申请日：1998-07-14
申请人： Robert S. Chau , Ebrahim Andideh , Mitch C. Taylor , Chia-Hong Jan , Julie Tsai
发明人： Robert S. Chau , Ebrahim Andideh , Mitch C. Taylor , Chia-Hong Jan , Julie Tsai
IPC分类号： H01L2976
CPC分类号： H01L29/66515 , H01L21/28525 , H01L21/28562 , H01L21/823814 , H01L21/823835 , H01L21/823878 , H01L29/41766 , H01L29/41783 , H01L29/665 , H01L29/66545 , H01L29/66636
摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

98. 发明授权

US06740579B2 Method of making a semiconductor device that includes a dual damascene interconnect 有权
标题翻译：制造包括双镶嵌互连的半导体器件的方法
公开(公告)号：US06740579B2
公开(公告)日：2004-05-25
申请号：US10174804
申请日：2002-06-18
申请人： Ebrahim Andideh
发明人： Ebrahim Andideh
IPC分类号： H01L214763
CPC分类号： H01L21/76835 , H01L21/76807
摘要： An improved method for making a semiconductor device is described. That method includes forming a first dielectric layer on a substrate, then forming on the first dielectric layer a second dielectric layer. The second dielectric layer is made from a material that is more sensitive to radiation of a specified wavelength and energy than is the material from which the first dielectric layer is made. After the first dielectric layer and the second dielectric layer are exposed to radiation of a specified wavelength and energy, a portion of the first dielectric layer is removed to form a via, and a portion of the second dielectric layer is removed to form a trench. The via and trench are then filled with a conductive material.
摘要翻译：描述了制造半导体器件的改进方法。该方法包括在衬底上形成第一电介质层，然后在第一电介质层上形成第二电介质层。第二电介质层由比制造第一介电层的材料对特定波长和能量的辐射更敏感的材料制成。在第一介电层和第二介电层暴露于特定波长和能量的辐射之后，去除第一介电层的一部分以形成通孔，并且去除第二介电层的一部分以形成沟槽。通孔和沟槽然后用导电材料填充。

99. 发明授权

US06518155B1 Device structure and method for reducing silicide encroachment 失效
公开(公告)号：US06518155B1
公开(公告)日：2003-02-11
申请号：US08884912
申请日：1997-06-30
申请人： Robert S. Chau , Ebrahim Andideh , Mitch C. Taylor , Chia-Hong Jan , Julie Tsai
发明人： Robert S. Chau , Ebrahim Andideh , Mitch C. Taylor , Chia-Hong Jan , Julie Tsai
IPC分类号： H01L213205
CPC分类号： H01L29/66515 , H01L21/28525 , H01L21/28562 , H01L21/823814 , H01L21/823835 , H01L21/823878 , H01L29/41766 , H01L29/41783 , H01L29/665 , H01L29/66545 , H01L29/66636
摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

100. 发明授权

US06506692B2 Method of making a semiconductor device using a silicon carbide hard mask 失效
标题翻译：使用碳化硅硬掩模制造半导体器件的方法
公开(公告)号：US06506692B2
公开(公告)日：2003-01-14
申请号：US09871546
申请日：2001-05-30
申请人： Ebrahim Andideh
发明人： Ebrahim Andideh
IPC分类号： H01L2126
CPC分类号： H01L21/76808 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , Y10S438/931
摘要： A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.
摘要翻译：描述了将碳化硅层的疏水表面转化为亲水表面的方法。该方法包括在衬底上形成含碳化硅的层，然后操作PECVD反应器以产生将该层的表面从疏水表面转化为亲水表面的等离子体。还描述了使用该技术制造半导体器件的方法。

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