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91. 发明授权

US06177344B1 BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient 有权
标题翻译： BPSG回流方法可降低下一代设备的热预算，包括在蒸汽环境中加热
公开(公告)号：US06177344B1
公开(公告)日：2001-01-23
申请号：US09199911
申请日：1998-11-25
申请人： Li-Qun Xia , Richard A. Conti , Maria Galiano , Ellie Yieh
发明人： Li-Qun Xia , Richard A. Conti , Maria Galiano , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/31051 , H01L21/3105 , H01L21/31625
摘要： A multistep method for planarizing a silicon oxide insulating layer such as a deposited borophosphosilicate glass (BPSG) layer. The method includes several different planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG layer deposited over it is loaded into a substrate processing chamber. Then, during a first planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed into the substrate processing chamber to form a steam ambient in said chamber and the substrate is heated in the steam ambient from a first temperature to a second temperature. The first temperature is below a reflow temperature of the BPSG layer and the second temperature is sufficient to reflow the layer. After the substrate is heated to the second temperature during a second planarization stage, the temperature of the substrate and the conditions within the substrate processing chamber are maintained at conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred embodiment, the multistep planarization method also includes a third planarization stage, after the second stage. In the third planarization stage, the flow of hydrogen is stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in the substrate processing chamber. The substrate temperature is maintained in the oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is believed that this additional step minimizes the amount of moisture incorporated into the reflowed BPSG layer.
摘要翻译：一种用于平坦化氧化硅绝缘层例如沉积的硼磷硅酸盐玻璃（BPSG）层的多步法。该方法包括几个不同的平坦化阶段。在初始预平坦化阶段期间，在其上沉积有BPSG层的衬底被加载到衬底处理室中。然后，在预平坦化阶段之后的第一平坦化阶段期间，氧气和氢气流入基板处理室以在所述室中形成蒸汽环境，并且基板在蒸汽环境中从第一温度加热到第二温度。第一温度低于BPSG层的回流温度，第二温度足以使该层回流。在第二平坦化阶段将衬底加热到第二温度之后，衬底的温度和衬底处理室内的条件保持在足以在蒸汽环境中回流BPSG层的条件。在更优选的实施例中，多级平面化方法还包括在第二级之后的第三平坦化级。在第三平坦化阶段，在保持氧气流的同时停止氢的流动，从而在衬底处理室中形成氧环境。在超过BPSG层的回流温度的温度下，将基板温度保持在氧环境中。据信这个附加步骤使并入回流的BPSG层中的水分量最小化。

92. 发明授权

US06170492B2 Cleaning process end point determination using throttle valve position 失效
标题翻译：清洗过程终点确定使用节气门位置
公开(公告)号：US06170492B2
公开(公告)日：2001-01-09
申请号：US09097411
申请日：1998-06-15
申请人： Hiroyuki Ueda , Hirotaka Tanabe , Makoto Okubo , Shankar Chandran , Ellie Yieh
发明人： Hiroyuki Ueda , Hirotaka Tanabe , Makoto Okubo , Shankar Chandran , Ellie Yieh
IPC分类号： B08B900
CPC分类号： H01J37/32935 , H01J37/3299 , H01J2237/186 , Y10S438/905
摘要： The present invention provides a method and apparatus for detecting the end point of a process by monitoring the position of a valve during the process. In one aspect, a cleaning process is performed in the chamber, and a controller monitors the valve position to determine the end point of the process which corresponds to a decrease in the number of steps in the valve position required to achieve a stable throttle valve position after the cleaning process is complete.
摘要翻译：本发明提供了一种通过在该过程期间监视阀的位置来检测过程终点的方法和装置。在一个方面，在室中执行清洁处理，并且控制器监视阀位置以确定过程的终点，其对应于实现稳定节气门位置所需的阀位数的减少清洁过程完成后。

93. 发明授权

US08871650B2 Post etch treatment (PET) of a low-K dielectric film 有权
标题翻译：低K电介质膜的后蚀刻处理（PET）
公开(公告)号：US08871650B2
公开(公告)日：2014-10-28
申请号：US13646113
申请日：2012-10-05
申请人： Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
发明人： Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/768 , H01L21/311 , H01L21/02
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/3105 , H01L21/31144 , H01L21/76826 , H01L2221/1063
摘要： Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
摘要翻译：描述了低k电介质膜的后蚀刻处理（PET）。例如，图案化低k电介质膜的方法包括用第一等离子体工艺蚀刻设置在衬底上方的低k电介质层。蚀刻涉及在低k电介质层上形成碳氟聚合物。低k电介质层用第二等离子体工艺进行表面调节。表面处理除去碳氟聚合物，并在低k电介质层上形成含有Si-O的保护层。用第三等离子体工艺除去含Si-O的保护层。

94. 发明申请

US20130109187A1 POST ETCH TREATMENT (PET) OF A LOW-K DIELECTRIC FILM 有权
标题翻译：低K电介质膜的后处理（PET）
公开(公告)号：US20130109187A1
公开(公告)日：2013-05-02
申请号：US13646113
申请日：2012-10-05
申请人： Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
发明人： Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
IPC分类号： H01L21/3065
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/3105 , H01L21/31144 , H01L21/76826 , H01L2221/1063
摘要： Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
摘要翻译：描述了低k电介质膜的后蚀刻处理（PET）。例如，图案化低k电介质膜的方法包括用第一等离子体工艺蚀刻设置在衬底上方的低k电介质层。蚀刻涉及在低k电介质层上形成碳氟聚合物。低k电介质层用第二等离子体工艺进行表面调节。表面处理除去碳氟聚合物，并在低k电介质层上形成含有Si-O的保护层。用第三等离子体工艺除去含Si-O的保护层。

95. 发明授权

US08242031B2 High quality silicon oxide films by remote plasma CVD from disilane precursors 有权
标题翻译：通过远离等离子体CVD从乙硅烷前体获得高质量的氧化硅膜
公开(公告)号：US08242031B2
公开(公告)日：2012-08-14
申请号：US12891426
申请日：2010-09-27
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Ellie Yieh
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Ellie Yieh
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56
摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
摘要翻译：一种在衬底上沉积含硅和氮的膜的方法。该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。

96. 发明申请

US20090104755A1 HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS 有权
标题翻译：通过远程等离子体CVD从高性能前驱体制造的高品质硅氧烷膜
公开(公告)号：US20090104755A1
公开(公告)日：2009-04-23
申请号：US11876538
申请日：2007-10-22
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Ellie Yieh
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Ellie Yieh
IPC分类号： H01L21/02
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56
摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
摘要翻译：一种在衬底上沉积含硅和氮的膜的方法。该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。

97. 发明申请

US20070087515A1 Low stress STI films and methods 有权
标题翻译：低应力STI膜和方法
公开(公告)号：US20070087515A1
公开(公告)日：2007-04-19
申请号：US11252400
申请日：2005-10-17
申请人： Ellie Yieh , Lung-Tien Han , Anchuan Wang , Lin Zhang
发明人： Ellie Yieh , Lung-Tien Han , Anchuan Wang , Lin Zhang
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/02274 , H01L21/31625 , H01L21/31629
摘要： The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.
摘要翻译：本发明一般涉及用于STI应用的低压应力掺杂硅酸盐玻璃膜。作为非限制性实例，应力降低掺杂剂可以是氟掺杂剂，锗掺杂剂或磷掺杂剂。低压应力STI膜通常表现出小于180MPa，优选小于约170MPa的压缩应力。在某些实施方案中，本发明的STI膜将表现出小于约100MPa的压缩应力。此外，在某些实施方案中，本发明的低压应力STI膜将包含应力降低掺杂剂的约0.1至25原子％。

98. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

99. 发明申请

US20050158667A1 Solvent free photoresist strip and residue removal processing for post etching of low-k films 审中-公开
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US20050158667A1
公开(公告)日：2005-07-21
申请号：US10761122
申请日：2004-01-20
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F7/00 , G03F7/36 , G03F7/42 , H01L21/02 , H01L21/311
CPC分类号： G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

100. 发明授权

US06814087B2 Accelerated plasma clean 有权
标题翻译：加速等离子清洁
公开(公告)号：US06814087B2
公开(公告)日：2004-11-09
申请号：US10115665
申请日：2002-04-03
申请人： Shankar W. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
发明人： Shankar W. Chandran , Scott Hendrickson , Gwendolyn D. Jones , Shankar Venkataraman , Ellie Yieh
IPC分类号： B08B700
CPC分类号： C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method of removing residue from a substrate processing chamber. In one embodiment the method comprises flowing an inert gas into a remote plasma chamber and forming a plasma within the chamber; maintaining the plasma while creating a plurality of reactive fluorine species by flowing a fluorine-containing gas into the remote plasma chamber and increasing a flow rate of a fluorine-containing gas from a first flow rate to a second flow rate higher than the first flow rate; and introducing the plurality of reactive fluorine species into the substrate processing chamber.

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