会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 96. 发明授权
    • Substrate solution for back gate controlled SRAM with coexisting logic devices
    • 用于具有共存逻辑器件的背栅控制SRAM的衬底解决方案
    • US07838942B2
    • 2010-11-23
    • US12144272
    • 2008-06-23
    • Robert H. DennardWilfried E. HaenschArvind KumarRobert J. Miller
    • Robert H. DennardWilfried E. HaenschArvind KumarRobert J. Miller
    • H01L29/76
    • H01L27/1108
    • A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field effect transistor (FET) wherein the back gate of each of the FET devices is doped to a specific level so as to improve the performance of the FET devices within the different device regions is provided. In particular, the back gate within the SRAM device region is more heavily doped than the back gate within the logic device region. In order to control short channel effects, the FET device within the logic device region includes a doped channel, while the FET device within the SRAM device region does not. A none uniform lateral doping profile with a low net doping beneath the source/drain regions and a high net doping underneath the channel would provide additional SCE control for the logic device.
    • 一种半导体结构,其包括至少一个逻辑器件区域和至少一个静态随机存取存储器(SRAM)器件区域,其中每个器件区域包括双门控场效应晶体管(FET),其中每个FET器件的背栅极掺杂 提供了特定的水平,以提高不同器件区域内的FET器件的性能。 特别地,SRAM器件区域内的背栅极比逻辑器件区域内的后栅极重掺杂。 为了控制短沟道效应,逻辑器件区域内的FET器件包括掺杂沟道,而SRAM器件区域内的FET器件不是。 在源极/漏极区域之下具有低净掺杂的非均匀横向掺杂分布和在沟道下方的高净掺杂将为逻辑器件提供附加的SCE控制。
    • 97. 发明授权
    • Radio frequency sensor systems, electromagnetic sensor arrays, and methods of manufacture
    • 射频传感器系统,电磁传感器阵列和制造方法
    • US07705591B2
    • 2010-04-27
    • US11772004
    • 2007-06-29
    • William P. GerenRobert J. Miller
    • William P. GerenRobert J. Miller
    • G01R33/09
    • G01R33/093B82Y25/00G01R33/091
    • An embodiment includes a radio frequency (RF) sensor system having a plurality of magnetoresistive (MR) sensors, where each MR sensor includes a configuration of MR elements and is adapted to produce a time-varying output voltage in response to a time-varying, external magnetic field. The RF sensor system also includes combiner circuitry, electrically coupled to the plurality of MR sensors, and adapted to receive and combine a plurality of time-varying output voltages from the plurality of MR sensors to generate a sensor output voltage. Another embodiment includes an electromagnetic sensor array having a plurality of MR sensors arranged in an array configuration, where each MR sensor includes a plurality of MR elements forming a Wheatstone bridge circuit, and where each MR sensor is adapted to produce a time-varying output voltage in response to a time-varying, external magnetic field. Still another embodiment includes a method for manufacturing an electromagnetic sensor array.
    • 一个实施例包括具有多个磁阻(MR)传感器的射频(RF)传感器系统,其中每个MR传感器包括MR元件的配置并且适于响应于时变的MR变量产生时变输出电压, 外部磁场。 RF传感器系统还包括电耦合到多个MR传感器并且适于接收和组合来自多个MR传感器的多个时变输出电压以产生传感器输出电压的组合器电路。 另一实施例包括具有以阵列配置布置的多个MR传感器的电磁传感器阵列,其中每个MR传感器包括形成惠斯登电桥电路的多个MR元件,并且其中每个MR传感器适于产生时变输出电压 响应于时变的外部磁场。 又一实施例包括一种用于制造电磁传感器阵列的方法。