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91. 发明授权

US6143191A Method for etch fabrication of iridium-based electrode structures 失效
标题翻译：铱基电极结构的蚀刻制造方法
公开(公告)号：US6143191A
公开(公告)日：2000-11-07
申请号：US966796
申请日：1997-11-10
申请人： Thomas H. Baum , Frank Dimeo, Jr.
发明人： Thomas H. Baum , Frank Dimeo, Jr.
IPC分类号： C23F1/12 , C23F4/00 , H01L21/02 , H01L21/3213 , B44C1/22
CPC分类号： H01L28/60 , C23F1/12 , C23F4/00 , H01L21/32136
摘要： A method of forming an iridium-based electrode structure on a substrate, from an iridium-containing precursor thereof which is decomposed to deposit iridium on the substrate. The iridium-based material is formed on the substrate in a desired environment, e.g., an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, or nitrogen oxide, or alternatively a reducing environment containing a reducing agent such as H.sub.2, CO or NH.sub.3. The iridium deposited on the substrate is contacted with an etching reagent such as halogen-based etch species (e.g., Cl.sub.2, Br.sub.2, F.sub.2, CCl.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, NF.sub.3, C.sub.2 F.sub.6, SF.sub.6, or CF.sub.4) formed by exposing halogen to light, laser radiation, plasma, or ion beam, or alternatively with XeF.sub.2, for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure. The electrode structure may then have a dielectric or ferroelectric material deposited thereon, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FeRAMs, hybrid systems, smart cards and communication systems.
摘要翻译：由基于铱的前体形成基于铱的电极结构的方法，该方法被分解以在基板上沉积铱。铱基材料在期望的环境中形成在基底上，例如氧化周围环境，其可以例如包含氧化气体，例如氧气，臭氧，空气或氮氧化物，或者可选地，含有还原剂的还原环境如H2，CO或NH3。沉积在基板上的铱与蚀刻剂接触，例如通过将卤素暴露于光而形成的卤素基蚀刻物质（例如，Cl2，Br2，F2，CCl4，Si2F6，SiCl4，NF3，C2F6，SF6或CF4）激光辐射，等离子体或离子束，或者与XeF2交替，足够的时间和足够的条件下蚀刻沉积的基于铱的材料并形成蚀刻的基于铱的电极结构。然后，电极结构可以具有沉积在其上的电介质或铁电材料，用于制造诸如DRAM，FeRAM，混合系统，智能卡和通信系统的薄膜电容器半导体器件。

92. 发明授权

US6022596A Method for photoselective seeding and metallization of three-dimensional materials 失效
标题翻译：三维材料的光选播种和金属化方法
公开(公告)号：US6022596A
公开(公告)日：2000-02-08
申请号：US684280
申请日：1996-07-17
申请人： Thomas H. Baum , Luis J. Matienzo , Cindy Reidsema Simpson , Joseph E. Varsik
发明人： Thomas H. Baum , Luis J. Matienzo , Cindy Reidsema Simpson , Joseph E. Varsik
IPC分类号： C23C18/14 , C23C18/26 , H05K3/00 , H05K3/10 , H05K3/18 , H05K3/40 , B05D3/00 , B05D3/04 , B05D3/06 , B05D5/12
CPC分类号： H05K3/105 , C23C18/14 , H05K3/185 , H05K3/403 , H01L2924/0002 , H05K2201/09645 , H05K3/0082 , Y10S428/901 , Y10T428/24917
摘要： A method is provided for selectively metallizing one or more three-dimensional materials in an electronic circuit package comprising the steps of forming a layer of seeding solution on a surface of the three-dimensional material of interest, exposing this layer to light of appropriate wavelength, resulting in the formation of metal seed on regions of the three-dimensional material corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper. Of additional significance, this method is ideal for plating three-dimensional materials such as cone-shaped connectors used in electronic circuit packages.
摘要翻译：提供了一种用于在电子电路封装中选择性地金属化一种或多种三维材料的方法，包括以下步骤：在感兴趣的三维材料的表面上形成接种溶液层，将该层暴露于适当波长的光，导致在与暴露于光的接种溶液层的区域相对应的三维材料的区域上形成金属种子; 通过使接种溶液层的暴露和未曝光区域经受碱溶液来除去接种溶液层的未曝光区域。此后，使用常规技术将另外的金属沉积，例如电镀到金属种子上。重要的是，该方法不涉及光致抗蚀剂或相应的化学显影剂或光致抗蚀剂剥离剂的使用。具有其他意义的是，该方法对于电子电路封装中使用的锥形连接器等三维材料的电镀是理想的。

93. 发明授权

US6015917A Tantalum amide precursors for deposition of tantalum nitride on a substrate 失效
标题翻译：用于在衬底上沉积氮化钽的钽酰胺前体
公开(公告)号：US6015917A
公开(公告)日：2000-01-18
申请号：US12679
申请日：1998-01-23
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/00 , C23C14/06 , C23C14/48 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/02 , C30B25/10 , C07F7/28 , C07F19/00
CPC分类号： C30B25/02 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/105 , C30B29/38
摘要： Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microlectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
摘要翻译：描述了钽和钛源试剂，包括用于通过诸如化学气相沉积，辅助化学气相沉积，离子注入，分子束外延和快速热处理的方法在衬底上沉积氮化钽材料的钽酰胺和钽氮化硅前体。可以使用前体在微电子器件结构上形成扩散阻挡层，使得能够在器件结构中使用铜金属化和铁电薄膜。

94. 发明授权

US6010744A Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films 失效
标题翻译：金属氧化物铁电薄膜的成核控制化学气相沉积方法
公开(公告)号：US6010744A
公开(公告)日：2000-01-04
申请号：US996574
申请日：1997-12-23
申请人： Peter Van Buskirk , Jeff Roeder , Frank Hintermaier , Bryan Hendrix , Thomas H. Baum
发明人： Peter Van Buskirk , Jeff Roeder , Frank Hintermaier , Bryan Hendrix , Thomas H. Baum
IPC分类号： C23C16/04 , C23C16/40 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/105 , B05D5/00
CPC分类号： H01L21/02271 , C23C16/04 , C23C16/40 , H01L21/02197 , H01L21/02299 , H01L21/31691 , Y10S977/891
摘要： A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition. The resultant oxide ferroelectric thin films are suitable for use in capacitors, memory devices and the like.
摘要翻译：描述了一种通过化学气相沉积的铁电薄膜的成核控制沉积的方法，其中新颖的加工顺序中，其中通过使用已经以产生a的方式处理的基底部件实现了较高密度的铋成核位点粗糙表面的可控制和可重复性，可以在其上生产具有优异性能的SBT膜或通过使用改性表面化学性质的化学改性的基材表面。用于实现表面粗糙化的典型技术包括反应离子蚀刻，惰性离子研磨和化学机械抛光，其中每一种可用于描绘图案化底部电极。基材的化学性质可以通过合金沉积，种子层的沉积进行改性，然后种子层将被部分或全部扩散离子注入，有或者没有热处理，并且通过预先暴露于化学试剂之前改变表面的化学性质，沉积所得到的氧化物铁电薄膜适用于电容器，存储器件等。

95. 发明授权

US6005127A Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films 失效
标题翻译：用于Sb离子注入和形成锑化物薄膜的锑/路易斯碱加合物
公开(公告)号：US6005127A
公开(公告)日：1999-12-21
申请号：US977507
申请日：1997-11-24
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C07F9/90 , C23C16/18 , C30B31/22 , C07F9/70
CPC分类号： C23C16/18 , C07F9/904 , C07F9/908 , C30B31/22
摘要： An antimony/Lewis base adduct of the formula SbR.sub.3.L, wherein each R is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 perfluoroalkyl, C.sub.1 -C.sub.8 haloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.6 -C.sub.10 perfluoroaryl, C.sub.6 -C.sub.10 haloaryl, C.sub.6 -C.sub.10 cycloalkyl, substituted C.sub.6 -C.sub.10 aryl and halo; and L is a Lewis base ligand coordinating with SbR.sub.3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.
摘要翻译：式SbR3.L的锑/路易斯碱加成物，其中每个R独立地选自C 1 -C 8烷基，C 1 -C 8全氟烷基，C 1 -C 8卤代烷基，C 6 -C 10芳基，C 6 -C 10全氟芳基，C 6 -C 10卤代芳基， C 6 -C 10环烷基，取代的C 6 -C 10芳基和卤素; L是与SbR 3配位的路易斯碱配位体。本发明的加成物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子辅助化学气相沉积），离子注入，分子束外延和快速热处理，以形成含锑或锑的膜。

96. 发明授权

US5919522A Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
标题翻译：使用多胺类前体生长BaSrTiO3
公开(公告)号：US5919522A
公开(公告)日：1999-07-06
申请号：US835768
申请日：1997-04-08
申请人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
IPC分类号： C07C49/12 , C07C211/14 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/18 , C23C16/40 , C23C16/409 , C23C16/4481
摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要翻译：一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

97. 发明授权

US5246745A Laser-induced chemical vapor deposition of thin-film conductors 失效
标题翻译：激光诱导化学气相沉积的薄膜导体
公开(公告)号：US5246745A
公开(公告)日：1993-09-21
申请号：US812686
申请日：1991-12-23
申请人： Thomas H. Baum , Paul B. Comita , John R. Lankard Sr. , Thoams F. Redmond , Thomas A. Wassick , Robert L. Jackson
发明人： Thomas H. Baum , Paul B. Comita , John R. Lankard Sr. , Thoams F. Redmond , Thomas A. Wassick , Robert L. Jackson
IPC分类号： C23C16/04 , H01L21/48 , H01L21/768 , H05K3/22
CPC分类号： H05K3/225 , C23C16/047 , H01L21/485 , H01L21/76894 , H05K2203/107 , H05K2203/1338 , H05K2203/173
摘要： Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.
摘要翻译：在薄膜电路冶金的脉冲激光去除期间对局部环境的控制被用于改变顶表面的性质。将这种激光处理的表面与LCVD膜相互连接导致不同的生长形态，这取决于所产生的表面的性质和消融过程中产生的碎屑。在消融过程中，流过氦气的表面会导致相同激光写入条件下的生长形态的改善。使用低功率激光扫描来诱导基板上的金属沉积而没有表面损伤。随后在中间激光功率下进行多次扫描以沉积所需厚度的金属（例如，约8μm）。最后，使用大功率激光扫描，无论是在现有冶金和金属修复之间或整个沉积区域的交点处。通过调制激光源的强度来降低散热或开花。

98. 发明授权

US5220044A Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films 失效
标题翻译：配体稳定了+1金属β-二酮配位络合物及其在金属薄膜化学气相沉积中的应用
公开(公告)号：US5220044A
公开(公告)日：1993-06-15
申请号：US852285
申请日：1992-03-16
申请人： Thomas H. Baum , Carl E. Larson , Scott K. Reynolds
发明人： Thomas H. Baum , Carl E. Larson , Scott K. Reynolds
IPC分类号： C23C16/18 , H05K3/40
CPC分类号： C23C16/18 , H05K3/4076
摘要： Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.
摘要翻译：用于在衬底上沉积铜，银，铑和铱金属的化学气相沉积前体包括所述金属的配体稳定的+1金属β-二酮配位络合物。还提供了这些前体在CVD工艺中的使用。

99. 发明授权

US5096737A Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films 失效
标题翻译：配体稳定了+1金属β-二酮配位络合物及其在金属薄膜化学气相沉积中的应用
公开(公告)号：US5096737A
公开(公告)日：1992-03-17
申请号：US602970
申请日：1990-10-24
申请人： Thomas H. Baum , Carl E. Larson , Scott K. Reynolds
发明人： Thomas H. Baum , Carl E. Larson , Scott K. Reynolds
IPC分类号： C07F1/08 , C07F1/10 , C07F9/02 , C07F9/50 , C07F15/00 , C23C16/18 , C23C16/48 , C23C16/50 , H01L21/285 , H05K3/40
CPC分类号： C23C16/18 , H05K3/4076
摘要： Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.
摘要翻译：用于在衬底上沉积铜，银，铑和铱金属的化学气相沉积前体包括所述金属的配体稳定的+1金属β-二酮配位络合物。还提供了这些前体在CVD工艺中的使用。

100. 发明授权

US09038855B2 Fluid processing systems and methods 有权
标题翻译：流体处理系统和方法
公开(公告)号：US09038855B2
公开(公告)日：2015-05-26
申请号：US13375462
申请日：2010-06-08
申请人： Steven M. Lurcott , John E. Q. Hughes , Peter Wrschka , Thomas H. Baum , Donald D. Ware , Peng Zou
发明人： Steven M. Lurcott , John E. Q. Hughes , Peter Wrschka , Thomas H. Baum , Donald D. Ware , Peng Zou
IPC分类号： G01F11/00 , B01F15/02 , B01F3/08 , B67D7/02
CPC分类号： B01F15/0203 , B01F3/0861 , B01F15/0258 , B01F2003/0896 , B65B3/14 , B67D7/025 , B67D7/0261 , B67D7/0283 , B67D7/741
摘要： Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel is subjected to filling by application of vacuum between the liner and overpack. Multiple feed material flow controllers of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materials supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.
摘要翻译：公开了用于将含流体的进料传送到加工设备的系统和方法。基于衬管的压力分配容器通过在衬套和外包装之间施加真空而进行填充。不同校准流量范围的多个进料流量控制器可以针对单个进料进行选择性并行操作。用于放大的进料混合和测试可以通过由多个基于衬管的压力分配容器供应的进料进行。重量分析系统可用于测定多组分溶液或混合物中至少一种组分的浓度。

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