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91. 发明授权

US5488528A Pole tip structure for thin film magnetic heads 失效
标题翻译：用于薄膜磁头的极尖结构
公开(公告)号：US5488528A
公开(公告)日：1996-01-30
申请号：US292630
申请日：1994-08-18
申请人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3183
摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.
摘要翻译：提供了具有良好对准的极尖的水平薄膜磁头。头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。第一极尖可以用诸如铜的非磁性材料加盖。在第一和第二极尖之间使用非常窄的侧隙。

92. 发明授权

US5285339A Magnetoresistive read transducer having improved bias profile 失效
标题翻译：具有改进的偏置轮廓的磁阻读取传感器
公开(公告)号：US5285339A
公开(公告)日：1994-02-08
申请号：US843702
申请日：1992-02-28
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903
摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.
摘要翻译：具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

93. 发明授权

US07864490B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07864490B2
公开(公告)日：2011-01-04
申请号：US11901584
申请日：2007-09-18
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

94. 发明授权

US07477491B2 GMR device having an improved free layer 有权
标题翻译： GMR装置具有改进的自由层
公开(公告)号：US07477491B2
公开(公告)日：2009-01-13
申请号：US11268076
申请日：2005-11-07
申请人： Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
发明人： Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3268 , H01F41/305 , Y10T29/49044
摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.
摘要翻译：已经发现，在CoFe或CoFe / NiFe复合材料中插入铜层压体导致CPP GMR和DRA的值更高。然而，这种类型的结构表现出非常负的磁致伸缩，在-10-6至-10-5的高度范围内。通过给铜层压板进行氧曝光解决了这个问题。当这样做时，发现自由层具有非常低的正磁致伸缩常数。此外，磁致伸缩常数的值可以通过改变自由层的厚度和/或氧处理的铜层压板的位置和数量来调节。

95. 发明授权

US07201947B2 CPP and MTJ reader design with continuous exchange-coupled free layer 失效
标题翻译： CPP和MTJ读卡器设计，具有连续的交换耦合自由层
公开(公告)号：US07201947B2
公开(公告)日：2007-04-10
申请号：US10238269
申请日：2002-09-10
申请人： Simon Liao , Kochan Ju , Youfeng Zheng
发明人： Simon Liao , Kochan Ju , Youfeng Zheng
IPC分类号： B29C35/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49046
摘要： As track widths of magnetic read heads grow very small, conventional longitudinal bias stabilization has been found to no longer be suitable since the strong magnetostatic coupling at the track edges also pins the magnetization of the free layer. This problem has been overcome by extending the free layer so that it is no longer confined to the area immediately below the spacer or tunneling layer. A longitudinal bias layer immediately below the free layer is given a relatively weak magnetic exchange coupling field of about 200 Oe. Although there is strong exchange coupling between this and the free layer, the degree of pinning of the free layer is low so that the device's output signal is reduced by less than about 10%. A process for manufacturing both the CPP SV and a MTJ versions of the invention is described.
摘要翻译：随着磁读头的轨道宽度增长非常小，传统的纵向偏置稳定性已经被发现不再适用，因为轨道边缘处的强静磁耦合也引导自由层的磁化。已经通过延伸自由层来克服这个问题，使得它不再局限于间隔物或隧道层正下方的区域。在自由层正下方的纵向偏置层被给予约200Oe的相对较弱的磁交换耦合场。尽管在这种自由层之间存在很强的交换耦合，但是自由层的钉扎程度很低，因此器件的输出信号减少了约10％。描述了用于制造本发明的CPP SV和MTJ版本的方法。

96. 发明申请

US20060203382A1 Thin laminated single pole perpendicular write head 失效
标题翻译：薄层叠单极垂直写头
公开(公告)号：US20060203382A1
公开(公告)日：2006-09-14
申请号：US11435053
申请日：2006-05-16
申请人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
发明人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/245 , G11B5/3156 , G11B5/465 , Y10T29/49032 , Y10T29/49043
摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.
摘要翻译：单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。中间层的厚度必须仔细控制。

97. 发明授权

US07075758B2 Supplementary shield for CPP GMR read head 有权
标题翻译： CPP GMR读取头补充屏蔽
公开(公告)号：US07075758B2
公开(公告)日：2006-07-11
申请号：US10657504
申请日：2003-09-08
申请人： Kunliang Zhang , Kochan Ju , Min Li , Youfeng Zheng , Simon Liao , Yue Liu
发明人： Kunliang Zhang , Kochan Ju , Min Li , Youfeng Zheng , Simon Liao , Yue Liu
IPC分类号： G11B5/39
CPC分类号： G11B5/332 , G11B5/31 , G11B5/3912 , G11B5/398
摘要： Increases in the AP1 and AP2 thickness cause the free layer to be off-center in a CPP magnetic read head. This problem has been overcome by inserting supplementary magnetic shields within the spin valve, located as close as possible to the stack. These supplementary shields enable the read gap width to be reduced by about 430 Å and the free layer to shift back towards the center by about 30 Å.
摘要翻译： AP 1和AP 2厚度的增加导致自由层在CPP磁读头中偏离中心。通过在辅助磁屏蔽件内插入尽可能靠近堆叠的位置来克服这个问题。这些辅助屏蔽使得读取间隙宽度可以减小约430埃，而自由层向中心向后移动大约30埃。

98. 发明授权

US07064924B2 Thin laminated single pole perpendicular write head 失效
公开(公告)号：US07064924B2
公开(公告)日：2006-06-20
申请号：US10610036
申请日：2003-06-30
申请人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
发明人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/245 , G11B5/3156 , G11B5/465 , Y10T29/49032 , Y10T29/49043
摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

99. 发明申请

US20060061918A1 Synthetic pattern exchange configuration for side reading reduction 有权
标题翻译：合成图案交换配置，用于减少边读数
公开(公告)号：US20060061918A1
公开(公告)日：2006-03-23
申请号：US11264543
申请日：2005-11-01
申请人： Min Li , You Zheng , Simon Liao , Kochan Ju
发明人： Min Li , You Zheng , Simon Liao , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B32B15/01 , B32B15/018 , B82Y10/00 , B82Y40/00 , C21D1/04 , C22C30/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F10/3295 , H01F41/308 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.
摘要翻译：提供了一种图案化，合成的纵向交换偏置GMR传感器，其具有窄的有效轨道宽度和减小的侧读数。通过满足强磁性自由层（F1）的磁化（M）和铁磁偏置层（F2）之间的新颖关系，能够确定这些层的最佳厚度，获得传感器的有利特性。的铁磁材料和交换耦合材料。要满足的关系是M＆lt; F2＆gt; /＆lt; F1＆gt; =＆lt; J＆gt; 其中J是F1和F2之间的合成耦合能量，并且J 2是在F2和覆盖的反铁磁钉扎层之间的交换能量。替代实施例省略了使得该关系变为M F2 / M F1 / 1的叠加反铁磁钉扎层。

100. 发明申请

US20060039188A1 Magnetic random access memory with stacked memory layers having access lines for writing and reading 有权
公开(公告)号：US20060039188A1
公开(公告)日：2006-02-23
申请号：US10924360
申请日：2004-08-23
申请人： Kochan Ju
发明人： Kochan Ju
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1655 , G11C11/1657 , G11C11/1659
摘要： A multiple-memory-layer magnetic random access memory (MRAM) has multiple memory layers arranged as pairs and stacked on a substrate. The first memory layer in the pair comprises a plurality of rows of memory cells located between electrically conductive access lines, and the second memory layer in the pair is substantially identical to the first memory layer, but is rotated about an axis perpendicular to the substrate so that the access lines and memory cell rows in one memory layer of the pair are orthogonal to their counterpart lines and rows in the other memory layer. The memory cells in each layer are aligned vertically (perpendicular to the substrate) with the memory cells in the other layer, with the vertically aligned memory cells forming memory cell columns that extend perpendicularly from the substrate. Each memory cell column has an electrical switch between the lowermost memory cell and the substrate.

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