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91. 发明授权

US08349739B2 Conformal etch material and process 有权
标题翻译：保形蚀刻材料和工艺
公开(公告)号：US08349739B2
公开(公告)日：2013-01-08
申请号：US12546812
申请日：2009-08-25
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/30604 , H01L21/32134
摘要： The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.
摘要翻译：本公开提供了蚀刻基板的方法。该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

92. 发明授权

US08323870B2 Method and photoresist with zipper mechanism 有权
标题翻译：方法和光刻胶拉链机制
公开(公告)号：US08323870B2
公开(公告)日：2012-12-04
申请号：US12916759
申请日：2010-11-01
申请人： Fong-Cheng Lee , Ching-Yu Chang
发明人： Fong-Cheng Lee , Ching-Yu Chang
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/0382 , G03F7/0392 , G03F7/325
摘要： The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.
摘要翻译：本公开提供了在光刻图案化工艺中使用的抗蚀剂。抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一，辐射能和化学反应。

93. 发明授权

US08304179B2 Method for manufacturing a semiconductor device using a modified photosensitive layer 有权
标题翻译：使用改性感光层制造半导体器件的方法
公开(公告)号：US08304179B2
公开(公告)日：2012-11-06
申请号：US12463501
申请日：2009-05-11
申请人： Chien-Wei Wang , Ching-Yu Chang
发明人： Chien-Wei Wang , Ching-Yu Chang
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/266 , H01L21/31133 , H01L21/31138
摘要： The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.
摘要翻译：本公开提供了一种用于制造半导体器件的方法。该方法包括在基底上涂覆光致抗蚀剂。光致抗蚀剂暴露于辐射。辐射曝光的光致抗蚀剂被烘烤。辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。用处理材料处理图像图案。对基板和经处理的图像图案执行离子注入工艺。图案图案从基板剥离。处理材料的碳原子比小于光致抗蚀剂的碳原子比。

94. 发明申请

US20120090547A1 SYSTEM AND METHOD OF VAPOR DEPOSITION 审中-公开
标题翻译：蒸气沉积系统与方法
公开(公告)号：US20120090547A1
公开(公告)日：2012-04-19
申请号：US13337846
申请日：2011-12-27
申请人： Chien-Wei Wang , David Ding-Chung Lu , Ching-Yu Chang
发明人： Chien-Wei Wang , David Ding-Chung Lu , Ching-Yu Chang
IPC分类号： C23C16/46
CPC分类号： H01L21/0273 , B05D1/60 , B05D3/02 , G03F7/167 , H01L21/0276
摘要： Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).
摘要翻译：提供了一种用于将涂料气相沉积到半导体衬底上的系统。该系统包括化学品供应室，可操作以分配蒸气的供应喷嘴和可操作以随着蒸汽分配而原位向基板提供热量的加热元件。该系统可以进一步包括反应室和/或混合室。

95. 发明授权

US08105954B2 System and method of vapor deposition 有权
标题翻译：气相沉积的系统和方法
公开(公告)号：US08105954B2
公开(公告)日：2012-01-31
申请号：US12254658
申请日：2008-10-20
申请人： Chien-Wei Wang , David Ding-Chung Lu , Ching-Yu Chang
发明人： Chien-Wei Wang , David Ding-Chung Lu , Ching-Yu Chang
IPC分类号： H01L21/47
CPC分类号： H01L21/0273 , B05D1/60 , B05D3/02 , G03F7/167 , H01L21/0276
摘要： Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.
摘要翻译：提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。在一个实施例中，沉积光致抗蚀剂。可以通过气相沉积来进行原位烘烤工艺。在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。因此，可以提供具有梯度化学成分分布的层。在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。可能蒸气沉积的其他材料包括图案冷冻材料。

96. 发明授权

US08048795B2 Self-assembly pattern for semiconductor integrated circuit 有权
标题翻译：半导体集成电路的自组装模式
公开(公告)号：US08048795B2
公开(公告)日：2011-11-01
申请号：US12610282
申请日：2009-10-31
申请人： Tsung-Lin Lee , Clement Hsingjen Wann , Ching-Yu Chang
发明人： Tsung-Lin Lee , Clement Hsingjen Wann , Ching-Yu Chang
IPC分类号： H01L21/4763
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/76816
摘要： A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.
摘要翻译：提供一种制造半导体器件的方法，其包括提供衬底。材料层形成在衬底上。聚合物层形成在材料层上。使用聚合物层的一部分自组装纳米尺寸的特征。使用纳米尺寸的特征对衬底进行图案化。

97. 发明申请

US20110262871A1 NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION 有权
标题翻译：新型TARC材料用于降低水分降低
公开(公告)号：US20110262871A1
公开(公告)日：2011-10-27
申请号：US13177741
申请日：2011-07-07
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： G03F7/20
CPC分类号： G02B1/111 , G03F7/091 , G03F7/11 , G03F7/2041 , Y10S430/111
摘要： Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.
摘要翻译：本文公开了各种光刻方法。在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 在抗蚀剂层上形成包含酸和螯合物中的一种的涂料层; 以及将抗蚀剂层和涂层材料层暴露于辐射，其中在曝光期间，涂层材料层中的酸和螯合物之一基本上中和从抗蚀剂层扩散到涂层材料层中的任何猝灭剂。

98. 发明申请

US20110159670A1 Method and Apparatus of Patterning a Semiconductor Device 有权
标题翻译：图案化半导体器件的方法和装置
公开(公告)号：US20110159670A1
公开(公告)日：2011-06-30
申请号：US12649462
申请日：2009-12-30
申请人： Chien-Wei Wang , Ming-Feng Shieh , Ching-Yu Chang
发明人： Chien-Wei Wang , Ming-Feng Shieh , Ching-Yu Chang
IPC分类号： H01L21/265 , G03F7/004 , G03F7/027 , H01L21/302
CPC分类号： G03F7/42 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/40 , G03F7/422 , G03F7/423 , H01L21/30604 , H01L21/31133
摘要： Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.
摘要翻译：提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。此外，提供了制造半导体器件的方法。该方法包括提供器件衬底。材料层形成在衬底上。在材料层上形成光致抗蚀剂材料。光致抗蚀剂材料具有包括骨架的聚合物。图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。此后，以破坏聚合物主链的方式处理图案化的光刻胶层。然后去除图案化的光致抗蚀剂层。

99. 发明授权

US07718348B2 Photolithography process and photomask structure implemented in a photolithography process 有权
标题翻译：在光刻工艺中实现的光刻工艺和光掩模结构
公开(公告)号：US07718348B2
公开(公告)日：2010-05-18
申请号：US12244857
申请日：2008-10-03
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： G03C5/00
CPC分类号： G03F7/70441 , G03F1/36
摘要： In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.
摘要翻译：在光刻工艺中，在基板上形成光致抗蚀剂层。光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。将基板暴露于通过光掩模的光辐射。然后将光致抗蚀剂层显影以形成图案图像。虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

100. 发明申请

US20100093176A1 METHOD OF FORMING A SACRIFICIAL LAYER 有权
标题翻译：形成真实层的方法
公开(公告)号：US20100093176A1
公开(公告)日：2010-04-15
申请号：US12536805
申请日：2009-08-06
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： H01L21/306
CPC分类号： H01L21/32139 , H01L21/31111 , H01L21/31133
摘要： The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。

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