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91. 发明授权

US4666569A Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor 失效
标题翻译：对薄膜p型II-VI半导体进行多层欧姆接触的方法
公开(公告)号：US4666569A
公开(公告)日：1987-05-19
申请号：US869545
申请日：1986-06-02
申请人： Bulent M. Basol
发明人： Bulent M. Basol
IPC分类号： H01L21/443 , H01L21/445 , H01L29/45 , C25D7/12 , C23C14/24 , C25D5/50
CPC分类号： H01L21/443 , H01L21/445 , H01L29/45
摘要： A method of making an ohmic content to a thin film of a II-VI compound semiconductor. The contact is made by etching the film with an acidic solution and thereafter treating the etched surface with an alkaline solution. A layer of copper 5 to 50 angstroms thick is deposited on the etched and treated surface and covered by a different metal. The contact may be heat treated to improve its performance.
摘要翻译：对于II-VI化合物半导体的薄膜制造欧姆含量的方法。通过用酸性溶液蚀刻膜然后用碱性溶液处理蚀刻的表面来进行接触。 5至50埃厚的铜层沉积在蚀刻和处理过的表面上并被不同的金属覆盖。可以对接触进行热处理以改善其性能。

92. 发明授权

US4647711A Stable front contact current collector for photovoltaic devices and method of making same 失效
标题翻译：用于光伏器件的稳定的前接触集电器及其制造方法
公开(公告)号：US4647711A
公开(公告)日：1987-03-03
申请号：US696148
申请日：1985-01-29
申请人： Bulent M. Basol , William J. Biter
发明人： Bulent M. Basol , William J. Biter
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/18 , H01L31/06
CPC分类号： H01L31/073 , H01L31/022425 , H01L31/18 , H01L31/1828 , H01L31/1832 , Y02E10/543
摘要： A large area, thin-film photovoltaic device 30 having a transparent front contact 32 is made more efficient by the use of a current collector grid 36. The current collector grid 36 is embedded in an optically transparent electrically conductive layer 34 and may extend partially into a substrate 32 or partially into a first semiconductor layer 38. The process for preparing such thin-film photovoltaic devices includes forming channels in the optically transparent electrically conductive layer 34 and depositing the current collector grid material in the channels. By this design, problems encountered in the deposition of thin-film semiconductor layers due to the presence of relatively large current collector grids are effectively eliminated.
摘要翻译：具有透明前触点32的大面积薄膜光伏器件30通过使用集电器栅极36而变得更有效。集电栅格36嵌入在光学透明的导电层34中，并且可以部分地延伸到基板32或部分地成为第一半导体层38.制备这种薄膜光伏器件的方法包括在光学透明导电层34中形成沟道，并将集电栅格材料沉积在沟道中。通过这种设计，有效地消除了由于存在相对大的集电器栅极而在薄膜半导体层的沉积中遇到的问题。

93. 发明授权

US4629820A Thin film heterojunction photovoltaic devices 失效
标题翻译：薄膜异质结光伏器件
公开(公告)号：US4629820A
公开(公告)日：1986-12-16
申请号：US762474
申请日：1985-09-17
申请人： Bulent M. Basol , Eric S. Tseng , Dennis S. Lo
发明人： Bulent M. Basol , Eric S. Tseng , Dennis S. Lo
IPC分类号： C25D7/00 , C25D9/08 , H01L21/368 , H01L31/0296 , H01L31/04 , H01L31/073 , H01L31/18 , H01L31/06
CPC分类号： H01L31/18 , C25D9/08 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02628 , H01L31/02966 , H01L31/073 , H01L31/1832 , Y02E10/543
摘要： Thin films of Hg.sub.1-x Cd.sub.x Te with controlled x greater than 0.5 are cathodically deposited on a thin CdS film over a conductive film of ITO deposited on a glass substrate. Depositing a conductive film on the electrodeposited Hg.sub.1-x Cd.sub.x Te treated to provide a Te-rich surface for a good ohmic contact forms an improved solar cell.
摘要翻译：受控x大于0.5的Hg1-xCdxTe的薄膜阴极沉积在沉积在玻璃基板上的ITO的导电膜上的薄CdS膜上。在电解沉积的Hg1-xCdxTe上沉积导电膜以提供富Te表面以获得良好的欧姆接触形成改进的太阳能电池。

94. 发明授权

US4595791A Thin-film photovoltaic devices incorporating current collector grid and method of making 失效
标题翻译：采用集电栅格的薄膜光伏器件及其制造方法
公开(公告)号：US4595791A
公开(公告)日：1986-06-17
申请号：US696149
申请日：1985-01-29
申请人： Bulent M. Basol , Eric S. Tseng , William J. Biter
发明人： Bulent M. Basol , Eric S. Tseng , William J. Biter
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/18 , H01L31/06
CPC分类号： H01L31/073 , H01L31/022425 , H01L31/18 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y10S205/923
摘要： A stable front contact current collector grid 116 is provided for photovoltaic devices. The current collector grid 116 is disposed between two semiconductor layers, 118 and 119, each semiconductor layer having the same conductivity type. The photovoltaic device utilizes a substrate 112; an optically transparent electrically conductive layer 114; a first layer of semiconductor material 118; a front contact current collector grid 116; a second layer of semiconductor material 119 having the same conductivity type as the first semiconductor layer; a third layer of semiconductor material 120 having a conductivity type opposite from that of the first and second semiconductor layers; and an electrically conductive film 122 in contact with the third semiconductor layer.
摘要翻译：为光伏器件提供稳定的前接触集电极栅极116。集电栅格116设置在两个半导体层118和119之间，每个半导体层具有相同的导电类型。光伏器件利用衬底112; 光学透明导电层114; 第一半导体材料层118; 前接触集电器栅极116; 具有与第一半导体层相同导电类型的第二半导体材料层119; 具有与第一和第二半导体层的导电类型相反的导电类型的第三层半导体材料120; 以及与第三半导体层接触的导电膜122。

95. 发明授权

US08444842B2 Electroplating methods and chemistries for deposition of group IIIA-group via thin films 失效
标题翻译：用于通过薄膜沉积IIIA族的电镀方法和化学物质
公开(公告)号：US08444842B2
公开(公告)日：2013-05-21
申请号：US13306863
申请日：2011-11-29
申请人： Jiaxiong Wang , Serdar Aksu , Bulent M. Basol
发明人： Jiaxiong Wang , Serdar Aksu , Bulent M. Basol
IPC分类号： C25D3/56
CPC分类号： C25D3/54 , C25D3/56 , H01L31/0322 , H01L31/03923 , H01L31/0749 , H01L31/20 , Y02E10/541
摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.
摘要翻译：提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。这样的层用于制造半导体和电子器件如薄膜太阳能电池。在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂在导电表面上。

96. 发明授权

US08415559B2 Method for forming copper indium gallium chalcogenide layer with shaped gallium profile 失效
标题翻译：用于形成具有形状镓型材的铜铟镓硫族化物层的方法
公开(公告)号：US08415559B2
公开(公告)日：2013-04-09
申请号：US12414029
申请日：2009-03-30
申请人： Bulent M. Basol
发明人： Bulent M. Basol
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , H01L31/0749 , Y02E10/541 , Y10T428/264 , Y10T428/265 , Y10T428/31678
摘要： Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.
摘要翻译：描述了使用这种前体层形成具有带隙分级的IBIIIAVIA族太阳能电池吸收体的前体层和方法。 IBIIIAVIA族吸收剂包括Ga /（Ga + In）摩尔比在0.1-0.3范围内的顶表面。 IBIIIAVIA集团太阳能电池吸收器是通过使包含在基底上形成的包含Cu，In和Ga的金属膜，形成在金属膜上的Se层和基本上包含 Ga形成在Se层上。

97. 发明授权

US08318530B2 Solar cell buffer layer having varying composition 失效
标题翻译：具有不同组成的太阳能电池缓冲层
公开(公告)号：US08318530B2
公开(公告)日：2012-11-27
申请号：US12843778
申请日：2010-07-26
申请人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
发明人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
IPC分类号： H01L21/00
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译：描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于一对一的滚动时尚。在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

98. 发明申请

US20120288986A1 ELECTROPLATING METHOD FOR DEPOSITING CONTINUOUS THIN LAYERS OF INDIUM OR GALLIUM RICH MATERIALS 审中-公开
标题翻译：用于沉积连续厚薄的薄膜或多孔材料的电镀方法
公开(公告)号：US20120288986A1
公开(公告)日：2012-11-15
申请号：US13347540
申请日：2012-01-10
申请人： Serdar Aksu , Jiaxiong Wang , Bulent M. Basol
发明人： Serdar Aksu , Jiaxiong Wang , Bulent M. Basol
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , C25D3/54 , C25D3/56 , C25D5/10 , C25D7/126 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.
摘要翻译：提供了一种电化学沉积方法，以形成具有可重复性的均匀且连续的IIIA族材料丰富的薄膜。这种薄膜用于制造半导体和电子器件如薄膜太阳能电池。在一个实施方案中，IIIA族富含物质的薄膜沉积在包含20-90摩尔％的In和Ga中的至少一种和至少10摩尔％的包含Cu，Se，Te， Ag和S.中间层的厚度适于小于或等于IIIA族富含薄膜的厚度的约20％。

99. 发明申请

US20120192948A1 HIGH EFFICIENCY CADMIUM TELLURIDE SOLAR CELL AND METHOD OF FABRICATION 有权
标题翻译：高效率的碲化镉太阳能电池和制造方法
公开(公告)号：US20120192948A1
公开(公告)日：2012-08-02
申请号：US13425184
申请日：2012-03-20
申请人： Bulent M. Basol
发明人： Bulent M. Basol
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L29/45 , H01L29/22 , H01L31/022425 , H01L31/056 , H01L31/073 , H01L31/18 , H01L31/1828 , Y02E10/52 , Y02E10/543
摘要： A method of forming an ohmic contact and electron reflector on a surface of a CdTe containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Cd-deficient, Te-rich surface region at a surface of the CdTe containing compound film; exposing the Cd-deficient surface region to an electron reflector forming material; forming the electron reflector; and laying down a contact layer over the electron reflector layer. The solar cell so produced has a Cd-deficient region which is converted to an electron reflector layer on the surface of a CdTe absorber layer, and an ohmic contact. A Cd/Te molar ratio within the Cd-deficient region decreases from 1 at an interface with the CdTe absorber layer to a value less than 1 towards the ohmic contact.
摘要翻译：在含CdTe的化合物膜的表面上形成欧姆接触和电子反射体的方法，例如在光伏电池中可以找到。该方法包括在含CdTe的化合物膜的表面形成Cd缺陷的富Te表面区域; 将Cd缺陷表面区域暴露于电子反射体形成材料; 形成电子反射体; 并在电子反射层上铺设接触层。如此制造的太阳能电池具有Cd缺陷区域，其在CdTe吸收剂层的表面上被转换成电子反射层，并且是欧姆接触。 Cd缺陷区内的Cd / Te摩尔比从CdTe吸收剂层的界面处的1减小到朝向欧姆接触的小于1的值。

100. 发明授权

US08187904B2 Methods of forming thin layers of photovoltaic absorbers 有权
标题翻译：形成光伏吸收器薄层的方法
公开(公告)号：US08187904B2
公开(公告)日：2012-05-29
申请号：US12177007
申请日：2008-07-21
申请人： Bulent M. Basol
发明人： Bulent M. Basol
IPC分类号： H01L21/00
CPC分类号： H01L21/02568 , C25D5/10 , C25D5/50 , H01L21/02614 , H01L31/0322 , H01L31/0392 , H01L31/03928 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521 , Y10T29/41
摘要： A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or pressure by a smooth surface to obtain a planar precursor structure. The precursor structure includes at least one of a Group IB material, Group IIIA material and Group VIA material. The planar precursor structures are reacted to form planar and compositionally uniform thin film absorber layers for solar cells.
摘要翻译：提供一种形成平面前体结构的方法和系统，其随后被转换成薄膜太阳能电池吸收层。首先在箔基材的前表面上形成前体结构，然后通过施加力或压力通过光滑表面进行平面化，以获得平面前体结构。前体结构包括IB族材料，IIIA族材料和VIA族材料中的至少一种。平面前体结构反应形成用于太阳能电池的平面和组成均匀的薄膜吸收层。

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