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91. 发明授权

US07612383B2 Reflector packages and semiconductor light emitting devices including the same 有权
标题翻译：反射器封装和包括其的半导体发光器件
公开(公告)号：US07612383B2
公开(公告)日：2009-11-03
申请号：US11953110
申请日：2007-12-10
申请人： Peter Andrews , Thomas G. Coleman , James Ibbetson , Michael Leung , Gerald H. Negley , Eric Tarsa
发明人： Peter Andrews , Thomas G. Coleman , James Ibbetson , Michael Leung , Gerald H. Negley , Eric Tarsa
IPC分类号： H01L29/267 , F21V9/16 , H01J5/48 , H01L21/00
CPC分类号： H01L33/58 , H01L33/52
摘要： Reflectors for a semiconductor light emitting device include a lower sidewall portion defining a reflective cavity. A substantially horizontal shoulder portion extends outwardly from the sloped lower sidewall portion. The horizontal shoulder portion has a circumferentially extending moat formed therein. An upper sidewall portion extends upwardly from the horizontal shoulder portion.
摘要翻译：用于半导体发光器件的反射器包括限定反射腔的下侧壁部分。大致水平的肩部从倾斜的下侧壁部分向外延伸。水平肩部具有形成在其中的周向延伸的护城河。上侧壁部分从水平肩部部分向上延伸。

92. 发明申请

US20080290353A1 MICROSCALE OPTOELECTRONIC DEVICE PACKAGES 有权
标题翻译： MICROSCALE光电设备包
公开(公告)号：US20080290353A1
公开(公告)日：2008-11-27
申请号：US11753483
申请日：2007-05-24
申请人： Nicholas W. Medendorp, JR. , James Ibbetson
发明人： Nicholas W. Medendorp, JR. , James Ibbetson
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L25/167 , H01L33/486 , H01L2224/48227 , H01L2224/48465 , H01L2224/8592 , H01L2924/19107 , H01S5/0206 , H01S5/06825 , H01L2924/00012 , H01L2924/00
摘要： An optoelectronic device article comprises a substrate containing at least one electrically conductive microvia, at least one emitter diode and at least one ESD diode, optionally formed in situ, disposed in or on the substrate, and an electrically conductive path between the foregoing elements. A reflector cavity may be defined in the substrate for receiving the emitter diode(s), with retention elements on the substrate used to retain a lens material. High flux density and high emitter diode spatial density may be attained. Thermal sensors, radiation sensors, and integral heat spreaders comprising one or more protruding fins may be integrated into the article.
摘要翻译：光电子器件制品包括一个衬底，该衬底包含至少一个导电微孔，至少一个发射极二极管和至少一个ESD二极管，可选择地原位地形成在衬底中或衬底上，以及前述元件之间的导电路径。可以在衬底中限定反射器腔，用于接收发射极二极管，衬底上的保持元件用于保持透镜材料。可以获得高通量密度和高发射极二极管空间密度。包括一个或多个突出翅片的热传感器，辐射传感器和整体散热器可以被整合到制品中。

93. 发明申请

US20080197369A1 Double flip semiconductor device and method for fabrication 审中-公开
标题翻译：双层半导体器件及其制造方法
公开(公告)号：US20080197369A1
公开(公告)日：2008-08-21
申请号：US11708990
申请日：2007-02-20
申请人： Max Batres , James Ibbetson , Nicholas W. Medendorp , Julio A. Garceran
发明人： Max Batres , James Ibbetson , Nicholas W. Medendorp , Julio A. Garceran
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/44
摘要： A double flip-chip semiconductor device formed by a double flip fabrication process. Epitaxial layers are grown on a substrate in the normal fashion with the n-type layers grown first and the p-type layers grown subsequently. The chip is flipped a first time and mounted to a sacrificial layer. The original substrate is removed, exposing the n-type layer, and various additional layers and treatments are added to the device. Because the n-type layer is exposed during fabrication, the layer may be processed in various ways including adding a reflective element, texturing the surface or adding microstructures to the layer to improve light extraction. The chip is flipped a second time and mounted to a support element. The sacrificial layer is then removed and additional layers and treatment are added to the device. The finished device features a configuration in which the layers maintain the same orientation with respect to the support element that they had with the original substrate on which they were grown. Processing the n-type layers, rather than the p-type layers as in a single flip process, provides greater design flexibility when selecting features to add to the device. Thus, previously unavailable processes and reflective elements may be utilized, enhancing the external quantum efficiency of the device.
摘要翻译：通过双层翻转制造工艺形成的双倒装芯片半导体器件。以正常方式在衬底上生长外延层，其中首先生长n型层，随后生长p型层。芯片首次翻转并安装到牺牲层。去除原始基底，暴露n型层，并将各种附加层和处理添加到该装置中。因为n型层在制造过程中被曝光，所以该层可以以各种方式加工，包括添加反射元件，使表面纹理化或者向层中添加微结构以改善光提取。芯片第二次翻转并安装在支撑元件上。然后去除牺牲层，并向设备添加附加层和处理。完成的装置具有这样的构造，其中层相对于它们与其生长在其上的原始基底所具有的支撑元件保持相同的取向。在单次翻转过程中处理n型层而不是p型层，在选择要添加到设备中的特征时，提供更大的设计灵活性。因此，可以利用先前不可用的处理和反射元件，增强器件的外部量子效率。

94. 发明申请

US20070290218A1 PACKAGED LIGHT EMITTING DEVICES 有权
标题翻译：包装发光装置
公开(公告)号：US20070290218A1
公开(公告)日：2007-12-20
申请号：US11849530
申请日：2007-09-04
申请人： Peter Andrews , Thomas Coleman , James Ibbetson , Michael Leung , Gerald Negley , Eric Tarsa
发明人： Peter Andrews , Thomas Coleman , James Ibbetson , Michael Leung , Gerald Negley , Eric Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/52 , H01L33/60 , H01L2924/181 , H01L2924/00012
摘要： Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.
摘要翻译：包装半导体发光器件包括具有限定反射腔的下侧壁部分的反射器。发光器件位于反射腔中。具有第一折射率的第一量固化的密封剂材料设置在包括发光器件的反射腔中。在第一量的固化的密封剂材料上提供第二量的具有与第一折射率不同的第二折射率的固化的密封剂材料。选择第一和第二折射率以在反射腔中提供掩埋透镜。

95. 发明授权

US06958497B2 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures 有权
标题翻译：具有量子阱和超晶格的III族氮化物基发光二极管结构，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
公开(公告)号：US06958497B2
公开(公告)日：2005-10-25
申请号：US10140796
申请日：2002-05-07
申请人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
发明人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
IPC分类号： H01L33/06 , H01L33/32 , H01L29/22
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱结构。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光二极管与III族氮化物基活性区。有源区可以是多量子阱有源区。

96. 发明申请

US20050062140A1 Molded chip fabrication method and apparatus 有权
标题翻译：成型芯片制造方法和装置
公开(公告)号：US20050062140A1
公开(公告)日：2005-03-24
申请号：US10666399
申请日：2003-09-18
申请人： Michael Leung , Eric Tarsa , James Ibbetson
发明人： Michael Leung , Eric Tarsa , James Ibbetson
IPC分类号： H01L21/56 , H01L33/50 , H01L23/02
CPC分类号： H01L33/504 , H01L21/565 , H01L24/96 , H01L27/15 , H01L33/50 , H01L2224/2518 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2924/00
摘要： A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.
摘要翻译：一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。根据本发明的一种方法包括提供具有地层腔的模具。多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。

97. 发明授权

US06515313B1 High efficiency light emitters with reduced polarization-induced charges 有权
标题翻译：具有降低的极化诱发电荷的高效率发光体
公开(公告)号：US06515313B1
公开(公告)日：2003-02-04
申请号：US09728788
申请日：2000-11-28
申请人： James Ibbetson , Brian Thibeault
发明人： James Ibbetson , Brian Thibeault
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/16
摘要： Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers, grading one or more layers to generate space charges and quasi-fields that oppose polarization-induced charges, incorporating various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.
摘要翻译：在极性方向生长的晶体层的半导体光发射体中自然发生的极化感应电场被减少，抵消或反转，以提高发射体的工作效率和载流子限制。这是通过减少相邻晶体层的材料组成的差异，对一个或多个层进行分级以产生空间电荷和与偏振电荷相反的准场，将各种杂质并入半导体中，将其电离成与偏振感应电荷，反转带电原子层的序列，反转器件中n型和p型层的生长顺序，采用多层发射系统代替均匀的有源区和/或改变面内晶格常数材料。

98. 发明授权

US10505083B2 Coating method utilizing phosphor containment structure and devices fabricated using same 有权
公开(公告)号：US10505083B2
公开(公告)日：2019-12-10
申请号：US11827626
申请日：2007-07-11
申请人： James Ibbetson , Kristi Wong , Maryanne Becerra
发明人： James Ibbetson , Kristi Wong , Maryanne Becerra
IPC分类号： H01L33/00 , H01L33/50 , H01L33/44 , H01L33/54
CPC分类号： H01L33/508 , H01L33/44 , H01L33/54 , H01L2933/0041
摘要： Methods for fabricating a semiconductor devices, and in particular light emitting diodes (LEDS) comprising providing a plurality of semiconductor devices on a substrate and forming a contact on at least some of the semiconductor devices. A containment structure is formed on at least some of the semiconductor devices having a contact with each containment structure defining a deposition area excluding the contact. A coating material is deposited then within the deposition area, with the coating material not covering the contact. A light emitting diode (LED) chip wafer comprising a plurality of LEDs on a substrate wafer with at least some of the LEDs having a contact. A plurality of containment structures are included, each of which is associated with a respective one of the plurality of LEDs. Each of the containment structures at least partially on its respective one of the LEDs and defining a deposition area on its respective one of the LEDs. The deposition area excludes the contact. A coating is included in each of the deposition areas.

99. 发明授权

US09112083B2 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures 有权
标题翻译：具有量子阱和超晶格的III族氮化物基发光二极管结构，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
公开(公告)号：US09112083B2
公开(公告)日：2015-08-18
申请号：US13535026
申请日：2012-06-27
申请人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
发明人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
IPC分类号： H01L31/072 , H01L33/06 , H01L21/02 , H01L33/32 , B82Y20/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X
摘要翻译：提供了一种半导体器件，其包括基于III族氮化物的超晶格和在该超晶格上包含至少一个量子阱结构的基于III族氮化物的有源区。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0＆nlE; X <1且0＆lt; nlE; Y <1且X不是等于Y.半导体器件可以是具有III族氮化物的有源区的发光二极管。有源区可以是多量子阱有源区。

100. 发明授权

US08643039B2 Lateral semiconductor Light Emitting Diodes having large area contacts 有权
标题翻译：侧向半导体发光二极管具有大面积接触
公开(公告)号：US08643039B2
公开(公告)日：2014-02-04
申请号：US13023788
申请日：2011-02-09
申请人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
发明人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
摘要翻译：发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触该欧姆接触n型层并且还在第一面上延伸。阳极和阴极接触件在第一面上延伸以共同覆盖基本上所有的第一面。可以在触点之间提供小的间隙。

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