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    • 94. 发明授权
    • Curable fluoropolyether base rubber compositions
    • 可固化氟聚醚基橡胶组合物
    • US06759468B2
    • 2004-07-06
    • US09995618
    • 2001-11-29
    • Makoto SatoShinichi Sato
    • Makoto SatoShinichi Sato
    • C08K334
    • C08G65/007C08G65/336
    • A fluoropolyether base rubber composition comprising (A) a linear fluoropolyether compound containing at least two alkenyl groups and having a perfluoroalkyl ether structure in its backbone, (B) a surface hydrophobized silica filler having a specific surface area of at least 100 m2/g and a vinyl content of 1×10−3 to 2×10−2 mol/100 g, (C) a curing amount of an organosilicon compound having at least two SiH groups, and (D) a hydrosilylation catalyst is curable into products having improved compression set as well as water repellency, oil repellency, solvent resistance, chemical resistance and weather resistance and finding typical use as O-rings.
    • 含氟聚醚基橡胶组合物,其包含(A)在其主链上含有至少两个烯基并具有全氟烷基醚结构的直链含氟聚醚化合物,(B)比表面积至少为100m 2的表面疏水化二氧化硅填料, / g,乙烯基含量为1×10 -3至2×10 -2 mol / 100g,(C)固化量为具有至少两个SiH基团的有机硅化合物,(D)氢化硅烷化催化剂可固化成 具有改进的压缩永久变形,防水性,拒油性,耐溶剂性,耐化学性和耐候性的产品,并且作为O型圈发现典型的用途。
    • 96. 发明授权
    • Electromagnetic relay
    • 电磁继电器
    • US06489868B1
    • 2002-12-03
    • US09514160
    • 2000-02-28
    • Shinichi SatoYoshio OkamotoShigemitsu AokiKeiji IkedaMasato Morimuta
    • Shinichi SatoYoshio OkamotoShigemitsu AokiKeiji IkedaMasato Morimuta
    • H01H5122
    • H01H50/38H01H9/40H01H9/44H01H50/40
    • The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contacts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.
    • 本发明提供一种电磁继电器,其即使在用于中断高电压时也具有长的使用寿命,并且可以小型化。 在这种电磁继电器中,电路中断由两个或更多个由单个线圈操作并串联连接的键控电路切断。 因此,抑制了每个键控电路产生的电弧量。 因此,电磁继电器的使用寿命延长。 此外,其触点之间的空间减小,使得电磁继电器小型化。 此外,用于熄灭电弧的磁场由电路切断时产生的反电动势或反电动势形成。 因此,所产生的电弧熄灭。
    • 97. 发明授权
    • Tape cassette having a biased locked member
    • 带盒具有偏置的锁定构件
    • US06407886B1
    • 2002-06-18
    • US09557905
    • 2000-04-21
    • Kenji HashizumeShinichi Sato
    • Kenji HashizumeShinichi Sato
    • G11B23087
    • G11B23/08742
    • A tape cassette having a case body including an upper case and a lower case, a recessed portion formed on the side of a lower surface of the case body, and a slider so provided in the case body as to be slidable for opening and closing the recessed portion, is disclosed. The tape cassette further has a lock member positioned at an opening of the lower case to lock the slider in respective positions where the recessed portion is closed and opened, and a biasing member, supported at its two side ends with the opening being interposed therebetween by an inner surface of the lower case, for biasing the slider to a lock position.
    • 一种盒式磁带,其具有包括上壳体和下壳体的壳体,形成在壳体的下表面侧的凹部,以及设置在壳体中的滑块,以便可滑动以打开和关闭 凹陷部分。 磁带盒还具有定位在下壳体的开口处的锁定构件,以将滑块锁定在凹部被关闭和打开的相应位置;以及偏压构件,其两侧端部被支撑,开口通过 下壳体的内表面,用于将滑块偏压到锁定位置。
    • 100. 发明授权
    • Method for manufacturing semiconductor memory device
    • 制造半导体存储器件的方法
    • US6066531A
    • 2000-05-23
    • US99520
    • 1998-06-18
    • Yukiharu AkiyamaTakuji TanigamiShinichi Sato
    • Yukiharu AkiyamaTakuji TanigamiShinichi Sato
    • H01L21/8247H01L27/115H01L29/788H01L29/792H01L21/336
    • H01L27/11521
    • A method for manufacturing a semiconductor memory device, including the steps of: forming a plurality of stripes comprising a first floating gate material film and a ion implantation protective film, covering one longitudinal side wall of the stripes with a resist pattern; removing a given width of the other side wall of the first floating gate material film by an isotropic etching in use of the resist pattern as a mask; forming an impurity region of low concentration by implanting impurity ions of a second conductivity type into the semiconductor substrate of the first conductivity type in use of the ion implantation protective film as a mask in a tilted direction after removing the resist pattern; and forming asymmetrical impurity regions on both sides of the stripe like first floating gate material film as viewed in the cross section along the direction perpendicular to the longitudinal direction of the stripes. According to the above-mentioned method, without using a side wall spacer, a semiconductor memory device provided with asymmetrical impurity regions having precisely desired forms can be obtained.
    • 一种制造半导体存储器件的方法,包括以下步骤:形成包括第一浮栅材料膜和离子注入保护膜的多个条,用抗蚀剂图案覆盖条的一个纵向侧壁; 通过使用抗蚀图案作为掩模,通过各向同性蚀刻去除第一浮栅材料膜的另一侧壁的给定宽度; 通过在去除抗蚀剂图案之后,在使用离子注入保护膜作为掩模作为掩模的情况下,将第二导电类型的杂质离子注入到第一导电类型的半导体衬底中,形成低浓度的杂质区; 以及沿着与条纹的纵向方向垂直的方向在横截面中看到的条状的第一浮栅材料膜的两侧上形成非对称杂质区域。 根据上述方法,在不使用侧壁间隔物的情况下,可以获得具有精确期望形状的非对称杂质区域的半导体存储器件。