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91. 发明申请

US20090135529A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090135529A1
公开(公告)日：2009-05-28
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them. The first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magneto-resistive effect changes so that much higher reliability is achievable.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及第一屏蔽层和第二屏蔽层，其位于和形成为使得磁阻效应单元夹在它们之间，具有沿层叠方向施加的感测电流。磁阻效应单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层介于它们之间。第一屏蔽层和第二屏蔽层由磁化方向控制装置在磁化方向上控制，并且第一铁磁层和第二铁磁层接收到产生反平行磁化状态的动作，其中相互磁化在第一屏蔽层和第二屏蔽层的磁作用的影响下处于相反方向。因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求记录密度此外，可以获得稳定的磁阻效应变化，从而可实现更高的可靠性。

92. 发明授权

US07533456B2 Fabrication process for magneto-resistive effect devices of the CPP structure 失效
标题翻译： CPP结构的磁阻效应器件的制造工艺
公开(公告)号：US07533456B2
公开(公告)日：2009-05-19
申请号：US11757174
申请日：2007-06-01
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01F41/183 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01L43/12 , Y10T29/49021 , Y10T29/49034 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.
摘要翻译：自由层的功能使得磁化方向根据外部磁场而变化，并且由包括第一Heusler合金层的多层结构构成，并且固定磁化层采用其中内部销层和外部销层彼此叠置，夹在它们之间的非磁性中间层。内销层由包括第二Heusler合金层的多层结构构成。第一和第二Heusler合金层各自通过共溅射技术形成，其使用分裂的目标分成至少两个子靶，以构成Heusler合金层组成。因此，当形成Heusler合金层时，可以提高膜沉积速率，提高生产率并提高器件的性能。

93. 发明申请

US20080198496A1 Near-field light generator plate, thermally assisted magnetic head, head gimbal assembly, and hard disk drive 有权
标题翻译：近场光发生器板，热辅助磁头，头万向节组件和硬盘驱动器
公开(公告)号：US20080198496A1
公开(公告)日：2008-08-21
申请号：US12003031
申请日：2007-12-19
申请人： Koji Shimazawa , Kosuke Tanaka
发明人： Koji Shimazawa , Kosuke Tanaka
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B7/1387 , G11B2005/0021
摘要： A near-field light generator plate 36 of the present invention is arranged to face a medium 10, and one portion 36b and other portion 36a in a medium-facing surface S thereof are made of their respective electroconductive materials different from each other. Since the one portion and the other portion in the medium-facing surface are made of the electroconductive materials different from each other, this medium-facing surface is formed by a surface removing step such as polishing or etching from the medium-facing surface side so that a difference between heights of the one portion and the other portion is readily made based on the difference of the materials.
摘要翻译：本发明的近场光发生器板36被布置为面向介质10，并且其中的介质表面S中的一个部分36b和其它部分36a由彼此不同的各自的导电材料制成。由于介质相对表面中的一部分和另一部分由彼此不同的导电材料制成，所以该介质表面通过表面去除步骤形成，例如从介质表面侧抛光或蚀刻，因此基于材料的差异容易地使一部分和另一部分的高度之间的差异。

94. 发明申请

US20080055762A1 Thermally assisted magnetic head, head gimbal assembly, and hard disk drive 有权
标题翻译：热辅助磁头，磁头万向节组件和硬盘驱动器
公开(公告)号：US20080055762A1
公开(公告)日：2008-03-06
申请号：US11892882
申请日：2007-08-28
申请人： Koji Shimazawa , Kosuke Tanaka , Takaaki Domon
发明人： Koji Shimazawa , Kosuke Tanaka , Takaaki Domon
IPC分类号： G11B5/02
CPC分类号： G11B5/02 , G11B5/314 , G11B2005/0005 , G11B2005/0021
摘要： A laser diode is fixed to a light source support substrate and a first surface of a slider substrate is fixed to a second surface of the light source support substrate; therefore, the slider substrate and the laser diode are kept in a fixed positional relation Since the laser diode faces a light entrance face of a core, long-distance propagation of light as in the conventional technology does not occur, and light emitted from, a light emitting element is guided well to a medium-facing surface, while permitting some mounting error and coupling loss of light A spot size w of a light intensity distribution along the X-axis in the XY plane including an incident-light centroid position on the light entrance face is set larger than a thickness of the core, whereby variation in incidence efficiency is well suppressed against positional deviation.
摘要翻译：激光二极管被固定到光源支撑基板上，并且滑块基板的第一表面固定到光源支撑基板的第二表面; 因此，滑块基板和激光二极管保持固定的位置关系由于激光二极管面向芯的光入射面，因此不会像现有技术那样发生长距离的光传播，发光元件被良好地导向面向中间的表面，同时允许一些安装误差和耦合损失光沿XY平面中的X轴的光强度分布的光斑尺寸w包括在该平面上的入射光重心位置光入射面被设定为大于芯的厚度，从而良好地抑制了位置偏移的入射效率的变化。

95. 发明申请

US20070274010A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 有权
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070274010A1
公开(公告)日：2007-11-29
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

96. 发明申请

US20070242396A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 失效
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070242396A1
公开(公告)日：2007-10-18
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

97. 发明申请

US20070223147A1 METHOD OF MANUFACTURING THIN-FILM MAGNETIC HEAD 有权
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20070223147A1
公开(公告)日：2007-09-27
申请号：US11752888
申请日：2007-05-23
申请人： Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , G11B5/3932 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T428/1107
摘要： A method of manufacturing a thin-film magnetic head including forming the first shield layer; forming the magnetoresistive device, carried out after forming the first shield layer, a heat treatment providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction; forming the domain control layer so as to hold the magnetoresistive device in a track width direction; magnetizing the domain control layer in a direction yielding a magnetic field in the same direction as with a magnetic field received by the ferromagnetic layer upon exchange-coupling with the antiferromagnetic layer, forming the second shield layer, carried out after magnetizing the domain control layer, and remagnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after forming the second shield layer.
摘要翻译：一种制造薄膜磁头的方法，包括形成第一屏蔽层; 形成所述磁阻器件，在形成所述第一屏蔽层之后进行的热处理，提供所述铁磁层与所述反铁磁层之间的交换耦合，以便沿预定方向磁化所述铁磁层; 形成所述域控制层，以将所述磁阻器件保持在轨道宽度方向; 在与反铁磁层交换耦合时由铁磁层接收的磁场沿与所述磁场相同的方向产生磁场的方向磁化畴控制层，形成在磁化控制层之后进行的第二屏蔽层，并且在形成第二屏蔽层之后进行的产生纵向偏置磁场的方向使磁畴控制层再磁化。

98. 发明申请

US20070183098A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US20070183098A1
公开(公告)日：2007-08-09
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。氧化物的RA范围为0.10欧姆2至0.36欧姆2。

99. 发明申请

US20070109691A1 Thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive 有权
标题翻译：薄膜磁头，头万向架组件，头臂组件和磁盘驱动器
公开(公告)号：US20070109691A1
公开(公告)日：2007-05-17
申请号：US11482090
申请日：2006-07-07
申请人： Takahiko Machita , Kei Hirata , Koji Shimazawa
发明人： Takahiko Machita , Kei Hirata , Koji Shimazawa
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3912 , G11B2005/3996
摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.
摘要翻译：薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

100. 发明授权

US07082673B2 Method of manufacturing magnetoresistive device capable of preventing a sense current from flowing into dead regions of a magnetoresistive element, and method of manufacturing thin-film magnetic head 失效
标题翻译：制造能够防止感测电流流入磁阻元件的死区的磁阻器件的制造方法以及制造薄膜磁头的方法
公开(公告)号：US07082673B2
公开(公告)日：2006-08-01
申请号：US10670470
申请日：2003-09-26
申请人： Koji Shimazawa , Koichi Terunuma
发明人： Koji Shimazawa , Koichi Terunuma
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/4806 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresisive device comprises: an MR element having two surfaces that face toward opposite directions and two side portions that face toward opposite directions; two bias field applying layers that are located adjacent to the side portions of the MR element and apply a longitudinal bias magnetic field to the MR element; and two electrode layers that are located adjacent to one of the surfaces of each of the bias field applying layers and feed a sense current to the MR element. The electrode layers overlap the one of the surfaces of the MR element. The magnetoresistive device further comprises two nonconductive layers that are located between the one of the surfaces of the MR element and the two electrode layers and located in two regions that include ends of the MR element near the side portions thereof, the two regions being parts of the region in which the electrode layers face toward the one of the surfaces of the MR element.
摘要翻译：磁感应装置包括：MR元件，其具有面向相反方向的两个表面和面向相反方向的两个侧面部分; 两个偏置场施加层，其位于与MR元件的侧部相邻并且向MR元件施加纵向偏置磁场; 以及两个电极层，其位于每个偏置场施加层的一个表面附近，并将感测电流馈送到MR元件。电极层与MR元件的一个表面重叠。磁阻器件还包括位于MR元件的一个表面和两个电极层之间的两个非导电层，并且位于两个区域中，该两个区域包括MR元件的靠近其侧部的端部，两个区域是电极层朝向MR元件的一个表面的区域。

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