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91. 发明授权

US07417264B2 Top-emitting nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：顶部发射氮化物基发光器件及其制造方法
公开(公告)号：US07417264B2
公开(公告)日：2008-08-26
申请号：US11011154
申请日：2004-12-15
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

92. 发明申请

US20080121914A1 Flip-Chip Light Emitting Diodes and Method of Manufacturing Thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20080121914A1
公开(公告)日：2008-05-29
申请号：US11632279
申请日：2005-07-12
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00 , H01L21/329
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

93. 发明申请

US20080105890A1 Reflective electrode and compound semiconductor light emitting device including the same 有权
标题翻译：反射电极和包含该反射电极的化合物半导体发光器件
公开(公告)号：US20080105890A1
公开(公告)日：2008-05-08
申请号：US12000870
申请日：2007-12-18
申请人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
发明人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01S5/0425 , H01S5/183
摘要： Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.
摘要翻译：提供反射电极和化合物半导体发光器件，例如包括其的LED或LD。形成在p型化合物半导体层上的反射电极包括：与p型化合物半导体层形成欧姆接触的第一电极层; 设置在第一电极层上并由透明导电氧化物形成的第二电极层; 以及设置在第二电极层上并由光学反射材料形成的第三电极层。

94. 发明授权

US07358541B2 Flip-chip light emitting diode and method of manufacturing the same 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US07358541B2
公开(公告)日：2008-04-15
申请号：US11002797
申请日：2004-12-03
申请人： Tae-yeon Seong , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , June-o Song , Dong-seok Leem
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0095
摘要： Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.
摘要翻译：提供了一种倒装芯片发光二极管（FCLED）及其制造方法。所提供的FCLED通过在衬底上依次沉积n型包覆层，有源层，p型包覆层和反射层而形成。反射层由添加溶质元素的银合金形成。根据提供的FCLED及其制造方法，改善了热稳定性以提高p型包覆层的欧姆接触特性，从而在包装所提供的FCLED时提高了引线接合效率和收率。此外，由于具有低的比接触电阻和优异的电流 - 电压特性，提供的FCLED的发光效率和寿命得到改善。

95. 发明授权

US07193249B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07193249B2
公开(公告)日：2007-03-20
申请号：US10963725
申请日：2004-10-14
申请人： Tae-yeon Seong , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , June-o Song , Dong-seok Leem
IPC分类号： H01L29/24
CPC分类号： H01L33/42 , H01L21/28575 , H01L33/32
摘要： Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer and an ohmic contact layer sequentially formed on the substrate. The ohmic contact layer is made from a p-type conductive transparent oxide thin film. The nitride-based light emitting device and method of manufacturing the same provide excellent I-V characteristics by improving characteristics of an ohmic contact to a p-cladding layer while enhancing light emission efficiency of the device due to high light transmittance exhibited by a transparent electrode.
摘要翻译：提供一种使用p型导电性透明薄膜电极层的氮化物系发光元件及其制造方法。氮化物系发光器件包括基片，以及顺序形成在基片上的n包层，有源层，p覆层和欧姆接触层。欧姆接触层由p型导电透明氧化物薄膜制成。氮化物系发光器件及其制造方法通过改善由p型覆层形成的欧姆接触特性而提供优异的I-V特性，同时由于透明电极所呈现的高透光性而提高了器件的发光效率。

96. 发明申请

US20050121685A1 Flip-chip light emitting diode and method of manufacturing the same 审中-公开
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20050121685A1
公开(公告)日：2005-06-09
申请号：US10981502
申请日：2004-11-05
申请人： Tae-yeon Seong , June-o Song , Dong-seok Leem , Hyun-gi Hong
发明人： Tae-yeon Seong , June-o Song , Dong-seok Leem , Hyun-gi Hong
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/34 , H01L33/42 , H01L33/00
CPC分类号： H01L33/46 , H01L33/42
摘要： Provided are a flip-chip type light emitting device and a method of manufacturing the same. The provided flip-chip type light emitting device includes a substrate, an n-type cladding layer, an active layer, a p-type cladding layer, an ohmic contact layer formed of tin oxide to which at least one of antimony, fluorine, phosphorus, and arsenic is doped, and a reflection material formed of a reflective material. According to the provided flip-chip type light emitting device and the method of manufacturing the same, a current-voltage characteristic and durability are improved by applying a conductive oxide electrode structure having low surface resistivity and high carrier concentration.
摘要翻译：提供一种倒装芯片型发光器件及其制造方法。所提供的倒装芯片型发光器件包括衬底，n型包覆层，有源层，p型覆层，由氧化锡形成的欧姆接触层，至少一种锑，氟，磷，并且砷被掺杂，以及由反射材料形成的反射材料。根据提供的倒装芯片型发光器件及其制造方法，通过施加具有低表面电阻率和高载流子浓度的导电氧化物电极结构，提高了电流 - 电压特性和耐久性。

97. 发明授权

US06169297A Metal thin film with ohmic contact for light emit diodes 有权
标题翻译：金属薄膜与欧姆接触发光二极管
公开(公告)号：US06169297A
公开(公告)日：2001-01-02
申请号：US09213735
申请日：1998-12-17
申请人： Ja Soon Jang , Hyo Keun Kim , Seong Ju Park , Tae Yeon Seong , Heung Kyu Jang
发明人： Ja Soon Jang , Hyo Keun Kim , Seong Ju Park , Tae Yeon Seong , Heung Kyu Jang
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/32
摘要： A metal thin film with an ohmic contact for light emit diodes and a method of producing such a film are disclosed. The metal thin film has a p-type gallium nitride (GaN) semiconductor layer. Nickel (Ni), platinum (Pt) and gold (Au) layers are deposited on the GaN semiconductor layer in a way such that the gold layer forms a top layer, with either one of the platinum and nickel layers being selectively used as an inter-diffusion barrier between metal layers. The inter-diffusion barrier may be formed by depositing platinum between the nickel and gold layers, thus forming an Ni/Pt/Au metal thin film, or formed by depositing nickel between the platinum and gold layers, thus forming an Pt/Ni/Au metal thin film. In the method, a GaN semiconductor is washed so as to be free from carbide and oxide layers. The Ni, Pt and Au layers are formed on the GaN semiconductor layer through a vacuum deposition process at 5×10−5-2×10−1 torr. The GaN semiconductor, having the metal thin film, is heat treated for 30 seconds-3 hours and at 250-1,000° C., and under nitrogen or argon ambient.
摘要翻译：公开了一种用于发光二极管的欧姆接触的金属薄膜及其制造方法。金属薄膜具有p型氮化镓（GaN）半导体层。镍（Ni），铂（Pt）和金（Au）层以这样的方式沉积在GaN半导体层上，使得金层形成顶层，铂层和镍层中的任一层选择性地用作间隙金属层之间的扩散屏障。互扩散势垒可以通过在镍层和金层之间沉积铂而形成，从而形成Ni / Pt / Au金属薄膜，或者通过在铂层和金层之间沉积镍形成，从而形成Pt / Ni / Au 金属薄膜。在该方法中，洗涤GaN半导体以便不含碳化物和氧化物层。 Ni，Pt和Au层通过真空沉积工艺在5×10 -5 -2×10 -1乇上形成在GaN半导体层上。具有金属薄膜的GaN半导体在氮气或氩气环境下进行热处理30秒-3小时和250-1,000℃。

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