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91. 发明申请

US20110198228A1 MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁记录介质及其制造方法
公开(公告)号：US20110198228A1
公开(公告)日：2011-08-18
申请号：US13093792
申请日：2011-04-25
申请人： Tatsuya Saito , Toru Den
发明人： Tatsuya Saito , Toru Den
IPC分类号： C25D5/02
CPC分类号： G11B23/00 , B82Y10/00 , G11B5/667 , G11B5/7325 , G11B5/74 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855 , G11B5/858
摘要： The present invention provides a method of manufacturing a magnetic recording medium having high recording density. The magnetic recording medium manufacturing method of the present invention is directed to a manufacturing method including: disposing at least a silicon layer on a substrate; disposing an uneven structure including regularly arranged projections on the silicon layer; disposing magnetic material on the upper surfaces of the projections and within recessed parts of the uneven structure; and allowing the magnetic material disposed within each recessed part to be changed into silicon compound by heat treatment.
摘要翻译：本发明提供一种具有高记录密度的磁记录介质的制造方法。本发明的磁记录介质的制造方法涉及一种制造方法，其特征在于，包括：至少在基板上设置硅层; 在硅层上设置包括规则排列的突起的不均匀结构; 在突起的上表面和不平坦结构的凹部内设置磁性材料; 并且通过热处理使设置在每个凹部内的磁性材料变成硅化合物。

92. 发明授权

US07864307B2 Biological information imaging apparatus, biological information analyzing method, and biological information imaging method 有权
标题翻译：生物信息成像装置，生物信息分析方法和生物信息成像方法
公开(公告)号：US07864307B2
公开(公告)日：2011-01-04
申请号：US12204445
申请日：2008-09-04
申请人： Kazuhiko Fukutani , Takao Nakajima , Yasufumi Asao , Toru Den
发明人： Kazuhiko Fukutani , Takao Nakajima , Yasufumi Asao , Toru Den
IPC分类号： G01N21/00
CPC分类号： A61B5/0073 , A61B5/0035 , A61B5/0095
摘要： A biological information imaging apparatus includes: a light source; an acoustic wave detector that detects an acoustic wave generated from a light absorption material in a living body that has absorbed a part of energy of light irradiated from the light source to the living body, and converts it into a first electric signal; a photodetector that detect optical intensity of a portion of the light irradiated from the light source to the living body and propagating in the living body, and converts it into a second electric signal; and a calculation unit that calculates optical property distribution information on the living body by making use of an analytical result of one of the first electric signal and the second electric signal for analysis of the other electric signal.
摘要翻译：生物信息成像装置包括：光源; 声波检测器，其检测从吸收从光源照射到生物体的光的一部分能量的生物体中的光吸收材料产生的声波，并将其转换为第一电信号; 光检测器，其检测从光源照射到生物体并在生物体中传播的光的一部分的光强度，并将其转换为第二电信号; 以及计算单元，其通过利用第一电信号和第二电信号中的一个的分析结果来计算其他电信号的分析结果来计算生物体的光学性质分布信息。

93. 发明授权

US07771791B2 Production process of structured material 有权
标题翻译：结构材料的生产工艺
公开(公告)号：US07771791B2
公开(公告)日：2010-08-10
申请号：US11468009
申请日：2006-08-29
申请人： Miki Ueda , Shigeru Ichihara , Toru Den
发明人： Miki Ueda , Shigeru Ichihara , Toru Den
IPC分类号： H01L21/00
CPC分类号： G11B5/74 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855
摘要： Disclosed herein is a process for producing a structured material, comprising the steps of forming a film on a substrate, forming a plurality of holes in a first region of the film, forming a plurality of holes composed of a hole wall member different from a hole wall member of the holes contained in the first region in a second region other than the first region, filling the holes in the first and second regions with the same material, and modifying the material in at least one region of the first and second regions by a heat treatment.
摘要翻译：本文公开了一种制造结构材料的方法，包括以下步骤：在基材上形成膜，在所述膜的第一区域中形成多个孔，形成多个由不同于孔的孔壁构件构成的孔包含在第一区域中的除了第一区域之外的第二区域中的孔的壁构件，用相同的材料填充第一和第二区域中的孔，并且通过以下方式修改第一和第二区域的至少一个区域中的材料：热处理。

94. 发明申请

US20100109002A1 OXYNITRIDE SEMICONDUCTOR 有权
标题翻译：氧化硅半导体
公开(公告)号：US20100109002A1
公开(公告)日：2010-05-06
申请号：US12532185
申请日：2008-04-23
申请人： Naho Itagaki , Tatsuya Iwasaki , Masatoshi Watanabe , Toru Den
发明人： Naho Itagaki , Tatsuya Iwasaki , Masatoshi Watanabe , Toru Den
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L29/247
摘要： Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and at least one element selected from the group consisting of In, Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.
摘要翻译：提供了包含金属氮氧化物的氧氮化物半导体。金属氮氧化物含有Zn和选自In，Ga，Sn，Mg，Si，Ge，Y，Ti，Mo，W和Al中的至少一种元素。金属氮氧化物的原子组成比为N，N /（N + O），为7原子％以上且在80原子％以下。

95. 发明申请

US20090189153A1 FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20090189153A1
公开(公告)日：2009-07-30
申请号：US12064302
申请日：2006-09-05
申请人： Tatsuya Iwasaki , Toru Den , Naho Itagaki
发明人： Tatsuya Iwasaki , Toru Den , Naho Itagaki
IPC分类号： H01L29/12
CPC分类号： H01L29/26 , H01L29/78 , H01L29/7869
摘要： Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not less than 35 atomic % and not more than 55 atomic %. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In+Zn+Ga) is set to be 30 atomic % or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility.
摘要翻译：本文公开了一种场效应晶体管，其包括由包括In和Zn的氧化物半导体材料构成的沟道。 In /（In + Zn）表示的原子组成比为35原子％以上55原子％以下。 Ga不包括在氧化物半导体材料中，或者当Ga包含Ga时，由Ga /（In + Zn + Ga）表示的原子组成比设定为30原子％以下。晶体管具有改善的S值和场效应迁移率。

96. 发明申请

US20080023880A1 PROCESS OF PRODUCTION OF PATTERNED STRUCTURE 有权
标题翻译：生产图案结构的过程
公开(公告)号：US20080023880A1
公开(公告)日：2008-01-31
申请号：US11773739
申请日：2007-07-05
申请人： Aya Imada , Toru Den
发明人： Aya Imada , Toru Den
IPC分类号： B28B11/08
CPC分类号： B29C59/022 , B29C2059/023 , Y10S977/887
摘要： A process for producing a patterned structure comprises imprinting a first pattern by pressing a stamper having a projection-depression configuration on the surface against an imprint-work layer, and imprinting a second pattern by displacing relatively the stamper from the position of the first pattern to another position on the imprint-work layer and then pressing the stamper against the imprint-work layer.
摘要翻译：用于制造图案化结构的方法包括：通过将表面上的具有突起 - 凹陷构造的压模压靠在压印工作层上来压印第一图案，并且通过相对地将压模从第一图案的位置移位到第一图案的方式来压印第二图案在压印工作层上的另一位置，然后将压模压靠在压印工作层上。

97. 发明申请

US20070229942A1 METHOD OF PRODUCING MOLD HAVING UNEVEN STRUCTURE, MOLD FOR OPTICAL ELEMENT, AND OPTICAL ELEMENT 有权
标题翻译：生产具有未来结构的模具的方法，光学元件和光学元件的模具
公开(公告)号：US20070229942A1
公开(公告)日：2007-10-04
申请号：US11686512
申请日：2007-03-15
申请人： Ryoko HORIE , Yasuhiro MATSUO , Nobuhiro YASUI , Toru Den
发明人： Ryoko HORIE , Yasuhiro MATSUO , Nobuhiro YASUI , Toru Den
IPC分类号： G06K7/10
CPC分类号： B29C45/372 , B29D11/00009 , B29D11/00326 , Y10T428/12396
摘要： A method of producing a mold having an uneven structure and a mold for an optical element are provided. The method includes forming on a nickel substrate a mixed film using nickel and a material which phase separates from nickel simultaneously, the mixed film including a plurality of cylinders including nickel as a component thereof and a matrix region including the material which phase separates from nickel as a component thereof and surrounding the plurality of cylinders; and removing the matrix portion from the mixed film by etching to give a mold including nickel or a nickel alloy. The uneven structure is disposed in plurality on the substrate, and a pitch of the uneven structure is within a range of 30 nm or more and 500 nm or less and a depth of the uneven structure is within a range of 100 nm or more.
摘要翻译：提供一种制造具有不平坦结构的模具的方法和用于光学元件的模具。所述方法包括在镍基板上形成使用镍和与镍同时分离的材料的混合膜，所述混合膜包括多个包含镍作为其组分的圆筒，以及包括与镍分相的材料的基体区域其组件并围绕所述多个气缸; 并通过蚀刻从混合膜中除去基体部分，得到包括镍或镍合金的模具。不均匀结构多个地设置在基板上，不平坦结构的间距在30nm以上且500nm以下的范围内，凹凸结构的深度在100nm以上的范围内。

98. 发明申请

US20060280862A1 Process for producing magnetic recording medium 有权
标题翻译：磁记录介质的制造方法
公开(公告)号：US20060280862A1
公开(公告)日：2006-12-14
申请号：US11448076
申请日：2006-06-07
申请人： Nobuhiro Yasui , Toru Den
发明人： Nobuhiro Yasui , Toru Den
IPC分类号： B05D5/12
CPC分类号： G11B5/84 , G11B5/85
摘要： A magnetic recording medium is provided which is contaminated less and improved in magnetic properties. The process for producing a magnetic recording medium having a recording layer constituted of magnetic granule portions dispersed in a nonmagnetic matrix portion comprises a first step of forming, on a base body, a nonmagnetic matrix portion, and Cu or Ag granule portions dispersed therein by a gas-phase deposition method, a second step of laminating magnetic granule portions on the Cu or Ag granule portions and laminating an additional nonmagnetic matrix portion on the nonmagnetic matrix portion formed in the first step, and a third step of heat-treating the laminate.
摘要翻译：提供磁性记录介质，其被污染较少并且磁性能得到改善。制造具有由分散在非磁矩阵部分的磁性颗粒部分构成的记录层的磁记录介质的方法包括在基体上形成非磁矩阵部分和在其中分散有Cu或Ag颗粒部分的第一步骤气相沉积方法，在Cu或Ag颗粒部分上层压磁性颗粒部分并在另一非磁性基体部分层叠另一非磁性基体部分的第二步骤，以及第三步骤对第一步骤进行热处理。

99. 发明申请

US20060213426A1 Structure, magnetic recording medium, and method of producing the same 失效
标题翻译：结构，磁记录介质及其制造方法
公开(公告)号：US20060213426A1
公开(公告)日：2006-09-28
申请号：US11386755
申请日：2006-03-23
申请人： Nobuhiro Yasui , Ryoko Horie , Toru Den
发明人： Nobuhiro Yasui , Ryoko Horie , Toru Den
IPC分类号： C30B11/00 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： G11B5/667 , G11B5/7325 , G11B5/8404 , G11B5/855
摘要： To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
摘要翻译：为了提供具有相分离结构的纳米尺寸的薄膜结构，对于在两种材料之间可以形成化合物的情况是有效的。由除了Si和Ge之外的元素A和Si（Si）1-n（其中0 <= n <1）之间的元素A之间的化合物的第一元件构成的结构，以及包含元素A和Si N 1-n N（其中0 <= n <= 1）之一的第二元件，其中第一元件和第二构件是形成在基板上的柱状构件，其侧面被另一构件包围，长轴方向上的平均直径D1的比D1 / Ds相对于短轴方向的平均直径Ds 柱状构件的截面形状小于5，元素A为Li，Na，Mg，K，Ca，Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Rb，Sr ，Y，Zr，Nb，Mo，Ru，Rh，Pd，Cs，Ba，La，Hf，Ta，W，Re，Os，Ir，Pt，Ce，Pr，Nd，Sm，Gd，Tb，Dy，Ho ，Er，Tm，Yb，Lu和B.

100. 发明授权

US06914008B2 Structure having pores and its manufacturing method 失效
标题翻译：具有孔的结构及其制造方法
公开(公告)号：US06914008B2
公开(公告)日：2005-07-05
申请号：US10839240
申请日：2004-05-06
申请人： Toru Den , Nobuhiro Yasui , Tatsuya Saito
发明人： Toru Den , Nobuhiro Yasui , Tatsuya Saito
IPC分类号： C25D11/04 , C25D11/18 , G11B5/74 , H01L43/08 , H01L21/302
CPC分类号： B82Y10/00 , C25D11/045 , C25D11/18 , G11B5/74 , G11B5/743 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A structure having pores includes a first layer containing alumina, a second layer that includes at least one of Ti, Zr, Hf, Nb, Ta, Mo, W and Si, and a third layer with electrical conductivity, in this order, wherein the first and second layers have pores.
摘要翻译：具有孔的结构包括含有氧化铝的第一层，包括Ti，Zr，Hf，Nb，Ta，Mo，W和Si中的至少一种的第二层，以及具有导电性的第三层，其中，第一层和第二层有孔。

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