会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 97. 发明申请
    • ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    • 静电放电保护装置
    • US20120056239A1
    • 2012-03-08
    • US12875217
    • 2010-09-03
    • Yeh-Ning JOUChia-Wei HungShu-Ling ChangHwa-Chyi ChiouYeh-Jen Huang
    • Yeh-Ning JOUChia-Wei HungShu-Ling ChangHwa-Chyi ChiouYeh-Jen Huang
    • H01L29/739H01L23/60
    • H01L27/0259H01L27/0274
    • An electrostatic discharge protection device is coupled between a first power line and a second power line and comprises a P-type well, a first N-type doped region, a first P-type doped region, a second P-type doped region and a second N-type doped region. The first N-type doped region is formed in the P-type well. The first P-type doped region is formed in the first N-type doped region. The second P-type doped region comprises a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. The second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT).
    • 静电放电保护装置耦合在第一电力线和第二电力线之间,并且包括P型阱,第一N型掺杂区,第一P型掺杂区,第二P型掺杂区和 第二N型掺杂区域。 第一个N型掺杂区形成在P型阱中。 第一P型掺杂区域形成在第一N型掺杂区域中。 第二P型掺杂区域包括第一部分和第二部分。 第二P型掺杂区的第一部分形成在第一N型掺杂区中。 第二P型掺杂区的第二部分形成在第一N型掺杂区的外部。 第二N型掺杂区形成在第二P型掺杂区的第一部分中。 第一P型掺杂区域,第一N型掺杂区域,第二P型掺杂区域和第二N型掺杂区域构成绝缘栅双极晶体管(IGBT)。