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91. 发明申请

US20080107906A1 METHOD FOR PREPARING POLYMER ACTUATORS WITH HIGH STABILITY AND POLYMER ACTUATORS PREPARED BY THE METHOD 审中-公开
标题翻译：制备具有高稳定性的聚合物致动器的方法和由该方法制备的聚合物致动器
公开(公告)号：US20080107906A1
公开(公告)日：2008-05-08
申请号：US11856484
申请日：2007-09-17
申请人： Nak Jin Choi , Jung Hyun Lee , Kang Ho Park , Hyo Young Lee , Hyung Kun Lee , Jong Dae Kim
发明人： Nak Jin Choi , Jung Hyun Lee , Kang Ho Park , Hyo Young Lee , Hyung Kun Lee , Jong Dae Kim
IPC分类号： B32B27/06 , B05D5/12 , B32B15/08
CPC分类号： B32B15/08 , Y10T428/31544 , Y10T428/31678
摘要： Provided are a method for preparing polymer actuators with high stability and polymer actuators prepared by the method, and more specifically, to a method for preparing polymer actuators with high stability that use low power, are extremely thin, and can be substituted in a motor of a camera module, and polymer actuators prepared by the method. The method includes the steps of: preparing an Ionic Polymer Metal Composite (IPMC) in which metal electrodes are plated on both surfaces of a ionic polymer film; removing water from the ionic polymer film of the IPMC; and expanding the IPMC in a polar solvent that has a higher boiling point and a lower freezing point than water.
摘要翻译：提供一种制备具有高稳定性的聚合物致动器和通过该方法制备的聚合物致动器的方法，更具体地说，涉及一种制备具有高功率，非常薄的高稳定性的聚合物致动器的方法，并且可以在相机模块和通过该方法制备的聚合物致动器。该方法包括以下步骤：制备在离子聚合物膜的两个表面上镀金属电极的离子聚合物金属复合物（IPMC）; 从IPMC的离子聚合物膜中除去水分; 并在具有比水更高的沸点和更低的凝固点的极性溶剂中扩展IPMC。

92. 发明授权

US07324903B2 Method and apparatus for measuring signal quality using eye pattern 有权
标题翻译：使用眼图测量信号质量的方法和装置
公开(公告)号：US07324903B2
公开(公告)日：2008-01-29
申请号：US10919531
申请日：2004-08-17
申请人： Eing-seob Cho , Jae-song Shim , Hyun-soo Park , Jae-wook Lee , Jung-hyun Lee , Eun-jin Ryu
发明人： Eing-seob Cho , Jae-song Shim , Hyun-soo Park , Jae-wook Lee , Jung-hyun Lee , Eun-jin Ryu
IPC分类号： G01R13/00 , G06F11/30
CPC分类号： H04L1/205
摘要： A signal quality measuring method and apparatus in which a quality of a signal detected from an RF signal read out from a disk or a communications channel is measured by using eye pattern signals of the detected RF signals. Eye pattern signals representing time change of a waveform of the detected signal are generated and a signal quality value is generated based on an eye depth and/or an eye width measured from the eye pattern signals. A histogram of the eye pattern signals is used to identify a plurality of main level values which are used as a reference value in measuring the signal quality. Accordingly, signal characteristics in a high-density storage medium system or communication system may be accurately represented.
摘要翻译：一种信号质量测量方法和装置，其中通过使用检测到的RF信号的眼图信号测量从从盘或通信信道读出的RF信号中检测到的信号的质量。产生表示检测信号的波形的时间变化的眼图信号，并且基于从眼图信号测量的眼睛深度和/或眼睛宽度来生成信号质量值。眼图信号的直方图用于识别在测量信号质量时用作参考值的多个主电平值。因此，可以精确地表示高密度存储介质系统或通信系统中的信号特性。

93. 发明申请

US20070297091A1 Patterned magnetic recording medium and method of manufacturing the same 审中-公开
标题翻译：图案化磁记录介质及其制造方法
公开(公告)号：US20070297091A1
公开(公告)日：2007-12-27
申请号：US11700077
申请日：2007-01-31
申请人： Sang-jun Choi , Jung-hyun Lee , Hoon-sang Oh , Bum-seok Seo
发明人： Sang-jun Choi , Jung-hyun Lee , Hoon-sang Oh , Bum-seok Seo
IPC分类号： G11B23/00
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/642 , G11B5/74 , G11B5/743 , G11B5/855
摘要： A patterned magnetic recording medium and a method of manufacturing the same are provided. The patterned magnetic recording medium includes a plate, a plurality of nanowires formed vertically on the plate, and a magnetic layer patterned on the nanowires. The magnetic layer protrudes in areas corresponding to the nanowires.
摘要翻译：提供了图案化的磁记录介质及其制造方法。图案化的磁记录介质包括板，垂直于板上形成的多个纳米线以及在纳米线上图案化的磁性层。磁性层在对应于纳米线的区域中突出。

94. 发明申请

US20070176264A1 Resistive random access memory device including an amorphous solid electrolyte layer 审中-公开
标题翻译：包括无定形固体电解质层的电阻式随机存取存储器件
公开(公告)号：US20070176264A1
公开(公告)日：2007-08-02
申请号：US11653316
申请日：2007-01-16
申请人： Jung-hyun Lee , Sang-jun Choi
发明人： Jung-hyun Lee , Sang-jun Choi
IPC分类号： H01L29/22
CPC分类号： H01L45/04 , H01L45/145
摘要： Provided is a resistive memory device including an amorphous solid electrolyte layer in a storage node. The resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes upper and lower electrodes formed of a bivalent or multivalent metal, and an amorphous solid electrolyte layer and an ion source layer formed of a monovalent metal between the upper and lower electrodes.
摘要翻译：提供了一种在存储节点中包括无定形固体电解质层的电阻式存储器件。电阻式存储器件包括连接到开关器件的开关器件和存储节点。存储节点包括由二价或多价金属形成的上电极和下电极，以及在上电极和下电极之间由非金属固体电解质层和由一价金属形成的离子源层。

95. 发明申请

US20070018219A1 Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor device 审中-公开
标题翻译：单元电池结构及其制造方法，具有单元电池结构的非挥发性半导体器件和制造非易失性半导体器件的方法
公开(公告)号：US20070018219A1
公开(公告)日：2007-01-25
申请号：US11480547
申请日：2006-07-05
申请人： Han-Jin Lim , Jung-Hyun Lee , Kyu-Ho Cho , Jin-Il Lee , Sung-Ho Park
发明人： Han-Jin Lim , Jung-Hyun Lee , Kyu-Ho Cho , Jin-Il Lee , Sung-Ho Park
IPC分类号： H01L29/94
CPC分类号： H01L45/04 , H01L45/122 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1675
摘要： A unit cell structure in a non-volatile semiconductor device includes a lower electrode. The variable resistor is formed on the lower electrode and includes a first insulation thin film, a third insulation thin film, and a second insulation thin film located between the first and third insulation thin films. A breakdown voltage of the second insulation thin film is lower than respective breakdown voltages of the first and third insulation thin films. An upper electrode is formed on the variable resistor.
摘要翻译：非易失性半导体器件中的晶胞结构包括下电极。可变电阻器形成在下电极上，并且包括位于第一和第三绝缘薄膜之间的第一绝缘薄膜，第三绝缘薄膜和第二绝缘薄膜。第二绝缘薄膜的击穿电压低于第一和第三绝缘薄膜的击穿电压。上电极形成在可变电阻上。

96. 发明申请

US20070012974A1 Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof 审中-公开
标题翻译：用于制造材料层的方法，使用该方法制造铁电电容器的方法，通过相同方法制造的铁电电容器，具有铁电电容器的半导体存储器件及其制造方法
公开(公告)号：US20070012974A1
公开(公告)日：2007-01-18
申请号：US11484582
申请日：2006-07-12
申请人： June-mo Koo , Bum-seok Seo , Young-soo Park , Jung-hyun Lee , Sang-min Shin , Suk-pil Kim
发明人： June-mo Koo , Bum-seok Seo , Young-soo Park , Jung-hyun Lee , Sang-min Shin , Suk-pil Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/02197 , H01L21/0228 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.
摘要翻译：提供一种能够提高强电介质层上的贵金属层的沉积速度的材料层的制造方法，使用该材料的铁电电容器的制造方法，通过相同的方法制造的铁电电容器以及半导体存储器件具有铁电电容器及其制造方法。根据材料层的制造方法，形成铁电体层。可以将铁电层暴露于种子等离子体，并且可以在暴露于种子等离子体的铁电层的区域上形成包括种子等离子体的源材料的材料层。

97. 发明授权

US07132710B2 Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device 有权
标题翻译：具有相同的电容器，半导体器件以及半导体器件的制造方法
公开(公告)号：US07132710B2
公开(公告)日：2006-11-07
申请号：US10902824
申请日：2004-08-02
申请人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
发明人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
IPC分类号： H01L29/92
CPC分类号： H01L28/75 , H01L21/28556 , H01L27/10852 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/90 , H01L28/91
摘要： A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
摘要翻译：提供具有由铝掺杂金属形成的下电极的堆叠型电容器的半导体器件及其制造方法。半导体器件包括：具有栅极结构和有源区的半导体衬底; 形成在有源区上的层间绝缘膜; 在层间电介质膜上由含有铝的金属形成的下电极; 形成在下电极上的电介质层; 形成在电介质层上的上电极; 以及形成在所述层间电介质膜中以将所述有源区电连接到所述下电极的插塞。该方法包括：在半导体衬底上形成栅极结构和有源区; 在所得半导体衬底上形成层间绝缘膜; 在所述层间电介质膜中形成插塞以与所述有源区电连接; 在插塞和层间电介质膜上形成模具氧化层; 以预定图案图案化模具氧化层，并在插头上形成含有铝的材料的下电极; 并且在下电极上依次形成电介质层和上电极。

98. 发明授权

US07113689B2 Microelectromechanical systems (MEMS) variable optical attenuator 失效
标题翻译：微机电系统（MEMS）可变光衰减器
公开(公告)号：US07113689B2
公开(公告)日：2006-09-26
申请号：US10606348
申请日：2003-06-26
申请人： Yoon Shik Hong , Young Gyu Lee , Sung Cheon Jung , Sang Kee Yoon , Hyun Kee Lee , Suk Kee Hong , Joon Seok Kang , Jung Hyun Lee
发明人： Yoon Shik Hong , Young Gyu Lee , Sung Cheon Jung , Sang Kee Yoon , Hyun Kee Lee , Suk Kee Hong , Joon Seok Kang , Jung Hyun Lee
IPC分类号： G02B6/00
CPC分类号： G02B6/353 , G02B6/266 , G02B6/35 , G02B6/3552 , G02B6/356 , G02B6/357 , G02B6/358 , G02B6/3582 , G02B6/3592 , G02B6/3594
摘要： An MEMS variable optical attenuator includes a substrate having a planar surface, a micro-electric actuator arranged on the planar surface of the substrate, a pair of coaxially aligned optical waveguides having a receiving end and a transmitting end, respectively, and an optical shutter movable to a predetermined position between the receiving end and the transmitting end of the optical waveguides, and driven by the micro-electric actuator. A surface layer is formed on the optical shutter, has reflectivity less than 80% so as to allow incident light beams to partially transmit thereinto, and further has a sufficient light extinction ratio, thereby extinguishing the partially transmitted light beams therein.
摘要翻译： MEMS可变光衰减器包括具有平面表面的基板，布置在基板的平面表面上的微电致动器，分别具有接收端和发射端的一对同轴对准的光波导，以及可移动的光闸到光波导的接收端和发送端之间的预定位置，并由微电动致动器驱动。表面层形成在光学快门上，具有小于80％的反射率，以便使入射光束部分地透射，并且还具有足够的消光比，由此熄灭其中部分透射的光束。

99. 发明申请

US20060209495A1 Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof 有权
公开(公告)号：US20060209495A1
公开(公告)日：2006-09-21
申请号：US11364182
申请日：2006-03-01
申请人： Jung-hyun Lee , Kyu-sik Kim
发明人： Jung-hyun Lee , Kyu-sik Kim
IPC分类号： H01G9/00
CPC分类号： H01C7/006 , G11C11/56 , G11C13/0009 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/1616
摘要： The semiconductor memory device includes a variable resistance device having a solid electrolyte in a three-dimensional structure. The variable resistance device includes a first electrode; the solid electrolyte, which has at least two regions with different heights, formed on the first electrode; and a second electrode made of a conductive material formed on the solid electrolyte to cover the regions with different heights. In addition, a multibit semiconductor memory device is provided which includes a bias circuit that can control the intensity of a current and time the current is supplied to the variable resistance device inside a memory cell in multiple steps to configure multibits.

100. 发明申请

US20060170033A1 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20060170033A1
公开(公告)日：2006-08-03
申请号：US11252766
申请日：2005-10-19
申请人： Jung-hyun Lee , Kyu-sik Kim
发明人： Jung-hyun Lee , Kyu-sik Kim
IPC分类号： H01L29/792
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L29/42332 , H01L29/517 , H01L29/792
摘要： A nonvolatile memory device and a method of manufacturing the same are provided. The nonvolatile memory device includes a semiconductor substrate on which a source region, a drain region, and a channel region are formed, a silicon oxide layer formed on the channel region, a transition metal oxide layer having trap particles that trap electrons, formed on the silicon oxide layer, and a gate electrode formed on the transition metal oxide layer.
摘要翻译：提供了一种非易失性存储器件及其制造方法。非易失性存储器件包括其上形成有源极区，漏极区和沟道区的半导体衬底，形成在沟道区上的氧化硅层，形成在阱区上的捕获电子的过渡金属氧化物层氧化硅层和形成在过渡金属氧化物层上的栅电极。

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