专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20120231608A1 PRODUCTION PROCESS FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的生产工艺
公开(公告)号：US20120231608A1
公开(公告)日：2012-09-13
申请号：US13416635
申请日：2012-03-09
申请人： Yasuyuki SHIBATA , Ji-Hao Liang , Takako Chinone
发明人： Yasuyuki SHIBATA , Ji-Hao Liang , Takako Chinone
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.
摘要翻译：（a）在生长衬底上形成由III族氮化物化合物半导体制成且含有空隙的含空隙层。（b）在含空隙层上形成由n型III族氮化物化合物半导体制成并用于封闭空隙的n型层。（c）在n型层上形成由III族氮化物化合物半导体制成的有源层。（d）在有源层上形成由p型III族氮化物半导体构成的p型层。（e）将支撑衬底粘合在p型层上。（f）在生成空隙的边界处剥离生长衬底。（g）平面化n型层。步骤（b）包括（b1）在水平生长相对较弱的条件下形成n型层的一部分，（b2）在水平生长相对较强的条件下形成n型层的剩余部分。

92. 发明申请

US20120197924A1 Method and Mobile Terminal for Recycling Short Messages 审中-公开
标题翻译：回收短消息的方法和移动终端
公开(公告)号：US20120197924A1
公开(公告)日：2012-08-02
申请号：US13502234
申请日：2010-10-20
申请人： Hao Liang , Lei Huang
发明人： Hao Liang , Lei Huang
IPC分类号： G06F17/30
CPC分类号： H04M1/72552 , G06Q10/107
摘要： The present invention provides a method and terminal for recycling the short messages, and the method includes: a mobile terminal storing the information of keywords of short message content configured by a user; when monitoring an operation of the user deleting the short messages, the mobile terminal analyzing whether the content of the short messages to be deleted contains the keywords, if yes, copying the short messages to be deleted to a recycle box. The present invention makes the user conveniently get back the short messages containing the important information which are lost due to a mistaken deletion, and it can effectively save the storage space of the mobile terminal and reduce the possibility of leaking the important information of the user.
摘要翻译：本发明提供了一种用于回收短消息的方法和终端，并且该方法包括：存储由用户配置的短消息内容的关键字的信息的移动终端; 当监视删除短消息的用户的操作时，移动终端分析要删除的短消息的内容是否包含关键字，如果是，则将要删除的短消息复制到回收站。本发明使得用户能够方便地回收包含由于错误删除而丢失的重要信息的短消息，并且可以有效地节省移动终端的存储空间并减少泄露用户的重要信息的可能性。

93. 发明申请

US20120077298A1 NITRIDE SEMICONDUCTOR CRYSTAL WITH SURFACE TEXTURE 有权
标题翻译：氮化物半导体晶体与表面纹理
公开(公告)号：US20120077298A1
公开(公告)日：2012-03-29
申请号：US13311644
申请日：2011-12-06
申请人： Ji-Hao LIANG , Masahiko Tsuchiya , Takako Chinone , Masataka Kajikawa
发明人： Ji-Hao LIANG , Masahiko Tsuchiya , Takako Chinone , Masataka Kajikawa
IPC分类号： H01L33/08
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/32
摘要： A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.
摘要翻译：氮化物半导体发光器件通过以下方式形成：在形成在衬底上的第一氮化物半导体层上形成抗蚀剂图案，该抗蚀剂图案具有相对于衬底表面倾斜的角度在垂直于基材表面; 通过使用抗蚀剂图案作为掩模来蚀刻基板，以将抗蚀剂图案转印到第一氮化物半导体层; 以及在所述图案化的第一氮化物半导体层上形成发光层。氮化物半导体发光器件可以发射近白光或具有大致等于或接近可见光范围的波长范围。

94. 发明授权

US08134562B2 Method for assisting in data calculation by using display card 有权
标题翻译：使用显示卡辅助数据计算的方法
公开(公告)号：US08134562B2
公开(公告)日：2012-03-13
申请号：US12346846
申请日：2008-12-31
申请人： Chih-Hao Liang , Li-Hsiang Liao
发明人： Chih-Hao Liang , Li-Hsiang Liao
IPC分类号： G06F15/16
CPC分类号： G09G5/363 , G09G5/222 , G09G2320/0252
摘要： A method for assisting in data calculation by using a display card: In the present method, input data stored in a system memory is transformed into texture data, which is then stored in a display memory of the display card. Then, a Graphic processing unit (GPU) of the display card is used for executing a texture calculation to the texture data, and a result of the texture calculation is stored in a display target of the display memory. Finally, the display target is outputted to the system memory as the output data. Accordingly, a part of calculation tasks of a central processing unit (CPU) can be given to the GPU of the display card when the CPU is in a high usage rate, so as to reduce a calculation burden of the CPU.
摘要翻译：一种通过使用显示卡辅助数据计算的方法：在本方法中，将存储在系统存储器中的输入数据变换为纹理数据，然后将其存储在显示卡的显示存储器中。然后，显示卡的图形处理单元（GPU）用于对纹理数据执行纹理计算，并且将纹理计算的结果存储在显示存储器的显示目标中。最后，将显示目标作为输出数据输出到系统存储器。因此，当CPU处于高使用率时，中央处理单元（CPU）的计算任务的一部分可以被提供给显示卡的GPU，以便减少CPU的计算负担。

95. 发明申请

US20120051377A1 WAVELENGTH CONVERSION STRUCTURE AND LIGHT SOURCE APPARATUS 有权
标题翻译：波长转换结构和光源设备
公开(公告)号：US20120051377A1
公开(公告)日：2012-03-01
申请号：US13211359
申请日：2011-08-17
申请人： Ji-Hao Liang , Teruo Koike
发明人： Ji-Hao Liang , Teruo Koike
IPC分类号： H01S3/04 , H01S5/02 , B05D5/06 , G02F1/35
CPC分类号： H01S5/0092 , F21S41/14 , F21S41/16 , F21Y2103/00 , F21Y2115/30 , H01L2224/48091 , H01L2224/48227 , H01S5/02236 , H01S5/02276 , H01S5/32341 , H01L2924/00014
摘要： A wavelength conversion structure includes a light guide formed of a light-transmissive member having a laser light incident port that allows the laser light to be introduced and a phosphor-containing layer that covers at least part of the surface of the light guide. The light guide has a light diffusing structure having asperities formed over the surface of the light guide except a laser light incident surface having the laser light incident port and a light reflecting film formed over the surface of the light guide along the asperities except the laser light incident port and the portion covered with the phosphor-containing layer.
摘要翻译：波长转换结构包括由具有允许引入激光的激光入射口的透光构件和覆盖光导的表面的至少一部分的含磷光体层形成的光导。导光体具有形成在导光体表面以外的凹凸的光漫射结构，除了具有激光入射面的激光入射面和形成在导光体表面以外的光反射膜沿着除了激光之外的凹凸入射口和被含磷光体层覆盖的部分。

96. 发明授权

US08111350B2 Semiconductor light-emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08111350B2
公开(公告)日：2012-02-07
申请号：US13005710
申请日：2011-01-13
申请人： Jiro Higashino , Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata
发明人： Jiro Higashino , Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata
IPC分类号： G02F1/1335
CPC分类号： H01L33/007 , H01L33/20 , H01L33/22 , H01L33/32
摘要： A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.
摘要翻译：在具有刚玉结构的C面基板上形成多个突起。在基板的表面上形成由包含Ga和N的III-V族化合物半导体制成的基膜。基膜的表面比基材的表面更平坦。包含Ga和N的发光结构设置在基膜上。突起规则地布置在相对于基膜的a轴倾斜小于15度并且在与第一方向正交的第二方向上倾斜的第一方向上。每个突起具有相对于m轴倾斜小于15度的两个第一平行边和相对于a轴倾斜小于15度的两个第二平行边。两个第二侧之间的间隔比两个第一侧之间的间隔宽。

97. 发明授权

US08090417B2 Electronic device with variable appearance 失效
标题翻译：具有可变外观的电子设备
公开(公告)号：US08090417B2
公开(公告)日：2012-01-03
申请号：US12429158
申请日：2009-04-23
申请人： Meng-Hao Liang
发明人： Meng-Hao Liang
IPC分类号： H04M1/00
CPC分类号： H04M1/72544 , G06F1/1626 , G06F1/1637 , H04M1/0283 , H04M2250/22
摘要： An electronic device includes a printed circuit board and a casing. The printed circuit board is for storing an image. The casing secures the printed circuit board and displays the image all through its outer surface. The casing includes a touch panel and a display panel. The touch panel is transparent and is for sensing touch of users and generating control signals. The display panel is under the touch panel and is for displaying the image according to the control signals.
摘要翻译：电子设备包括印刷电路板和外壳。印刷电路板用于存储图像。外壳固定印刷电路板，并通过其外表面显示图像。壳体包括触摸面板和显示面板。触摸屏是透明的，用于感测用户的触摸并产生控制信号。显示面板位于触摸屏下方，用于根据控制信号显示图像。

98. 发明授权

US08057953B2 Coupling structure of fuel cells 有权
标题翻译：燃料电池耦合结构
公开(公告)号：US08057953B2
公开(公告)日：2011-11-15
申请号：US11976934
申请日：2007-10-30
申请人： Shung-Huei Chang , Shu-Hao Liang
发明人： Shung-Huei Chang , Shu-Hao Liang
IPC分类号： H01M2/00
CPC分类号： H01M8/0247 , H01M8/0263 , H01M8/2483 , H01M8/2485 , H01M8/249
摘要： The coupling structure of fuel cells according to the present invention comprises a body and a plurality of channels. A first fuel cell is adapted on a first side of the body; a second fuel cell is adapted on a second side of the body. The plurality of channels penetrates through the first and the second sides. Each of the channels connects to a fuel-guiding inlet, a fuel-guiding outlet, an oxidant-gas-guiding inlet, and an oxidant-gas-guiding outlet of the first and the second fuel cells, respectively. The coupling structure has an insulation property with a conductive module embedded used for conducting a negative terminal of the first fuel cell and a positive terminal of the second fuel cell on the first and the second sides. By means of a coupling module, the internal wires can be used for cascading or isolating the positive and the negative terminals of the two fuel cells. The coupling structure has channels for fuel (anode) and oxidant gas (cathode), used for communicating the fuel or oxidant gas while cascading two or more fuel cells. Thereby, convenience of cascading planarly fuel cells can be enhanced.
摘要翻译：根据本发明的燃料电池的耦合结构包括主体和多个通道。第一燃料电池适合于主体的第一侧; 第二燃料电池适合于主体的第二侧。多个通道穿过第一和第二侧。每个通道分别连接到第一和第二燃料电池的燃料引导入口，燃料引导出口，氧化剂 - 气体引导入口和氧化剂 - 气体引导出口。耦合结构具有绝缘性能，其中嵌入的导电模块用于导电第一和第二侧上的第一燃料电池的负极端子和正极端子。通过耦合模块，内部导线可用于级联或隔离两个燃料电池的正极和负极端子。耦合结构具有用于燃料（阳极）和氧化剂气体（阴极）的通道，用于在两个或多个燃料电池串联的同时连通燃料或氧化剂气体。由此，可以提高平面燃料电池级联的方便性。

99. 发明授权

US08008170B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08008170B2
公开(公告)日：2011-08-30
申请号：US12636934
申请日：2009-12-14
申请人： Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata , Jiro Higashino
发明人： Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata , Jiro Higashino
IPC分类号： H01L21/36 , H01L21/20 , H01L29/04 , H01L31/036 , H01L33/00
CPC分类号： H01L21/02639 , H01L21/0242 , H01L21/02433 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/0265 , H01L33/007 , H01L33/0079
摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.
摘要翻译：提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个时代以交替的方式。

100. 发明授权

US07976328B2 Electrical connector 有权
标题翻译：电连接器
公开(公告)号：US07976328B2
公开(公告)日：2011-07-12
申请号：US12567868
申请日：2009-09-28
申请人： Cheng-Min Tsai , Hao-Liang Chao
发明人： Cheng-Min Tsai , Hao-Liang Chao
IPC分类号： H01R4/50
CPC分类号： H01R12/88 , H01R12/775
摘要： An electrical connector for a flexible printed circuit is provided. The electrical connector comprises a connector set, a terminal and a fasten assembly. The connector set has a base, a cover and a pin. The cover is pivotally connecting to the base by the pin and adapted to open or shut the receiving space defined by the base and the cover. The terminal is adapted to be detachably inserted into the receiving space to electrically connect the connector set. The fasten assembly is disposed on the base and the terminal respectively. When the terminal is inserted into the receiving space, the fasten assembly is adapted to fasten the terminal to the base.
摘要翻译：提供了一种用于柔性印刷电路的电连接器。电连接器包括连接器组，端子和紧固组件。连接器组具有底座，盖子和针脚。盖通过销枢转地连接到基座并且适于打开或关闭由基座和盖定义的接收空间。端子适于可拆卸地插入接收空间以电连接连接器组。紧固组件分别设置在基座和端子上。当终端插入接收空间时，紧固组件适于将终端固定到基座。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式